CN109427946B - 半导体器件封装件 - Google Patents

半导体器件封装件 Download PDF

Info

Publication number
CN109427946B
CN109427946B CN201811034004.6A CN201811034004A CN109427946B CN 109427946 B CN109427946 B CN 109427946B CN 201811034004 A CN201811034004 A CN 201811034004A CN 109427946 B CN109427946 B CN 109427946B
Authority
CN
China
Prior art keywords
insulating member
body unit
semiconductor device
metal body
unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201811034004.6A
Other languages
English (en)
Chinese (zh)
Other versions
CN109427946A (zh
Inventor
李高恩
姜熙成
金佳衍
李莹俊
陈敏智
尹载畯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Liyu Semiconductor Co ltd
Original Assignee
Suzhou Lekin Semiconductor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suzhou Lekin Semiconductor Co Ltd filed Critical Suzhou Lekin Semiconductor Co Ltd
Publication of CN109427946A publication Critical patent/CN109427946A/zh
Application granted granted Critical
Publication of CN109427946B publication Critical patent/CN109427946B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8585—Means for heat extraction or cooling being an interconnection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means

Landscapes

  • Led Device Packages (AREA)
  • Light Receiving Elements (AREA)
  • Control And Other Processes For Unpacking Of Materials (AREA)
  • Lead Frames For Integrated Circuits (AREA)
CN201811034004.6A 2017-09-05 2018-09-05 半导体器件封装件 Active CN109427946B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2017-0113439 2017-09-05
KR20170113439 2017-09-05
KR10-2018-0101576 2018-08-28
KR1020180101576A KR102641336B1 (ko) 2017-09-05 2018-08-28 반도체 소자 패키지

Publications (2)

Publication Number Publication Date
CN109427946A CN109427946A (zh) 2019-03-05
CN109427946B true CN109427946B (zh) 2022-05-20

Family

ID=65761758

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201811034004.6A Active CN109427946B (zh) 2017-09-05 2018-09-05 半导体器件封装件

Country Status (5)

Country Link
US (1) US11335843B2 (enExample)
JP (1) JP6755911B2 (enExample)
KR (1) KR102641336B1 (enExample)
CN (1) CN109427946B (enExample)
TW (1) TWI802587B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102650690B1 (ko) * 2018-10-23 2024-03-25 주식회사 루멘스 Uv led 패키지
KR102747406B1 (ko) * 2019-05-27 2024-12-27 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자 패키지
JP7173347B2 (ja) * 2019-07-25 2022-11-16 株式会社大真空 発光装置のリッド材、リッド材の製造方法および発光装置
JP7370274B2 (ja) * 2020-02-18 2023-10-27 日機装株式会社 半導体パッケージ及び半導体発光装置
JP7450466B2 (ja) * 2020-06-22 2024-03-15 スタンレー電気株式会社 発光装置及び発光装置の製造方法
US12181741B2 (en) * 2021-06-21 2024-12-31 Saint-Gobain Glass France Segmented multilayer film with electrically controllable optical properties

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003168828A (ja) * 2001-12-04 2003-06-13 Citizen Electronics Co Ltd 表面実装型発光ダイオード及びその製造方法
CN1855561A (zh) * 2005-04-30 2006-11-01 三星电机株式会社 发光二极管封装的制造方法
CN101267011A (zh) * 2007-03-13 2008-09-17 夏普株式会社 半导体发光装置、半导体发光装置用多引线框架
CN102142513A (zh) * 2010-01-29 2011-08-03 株式会社东芝 Led封装及制作led封装的方法
CN104037316A (zh) * 2014-06-19 2014-09-10 广州市鸿利光电股份有限公司 一种led无机封装支架及其封装方法
CN104584244A (zh) * 2012-08-03 2015-04-29 普因特工程有限公司 用于制造光学装置的方法及由该方法制造的光学装置
CN104937732A (zh) * 2012-12-12 2015-09-23 普因特工程有限公司 Led金属基板封装及其制造方法
CN106030832A (zh) * 2014-03-04 2016-10-12 奥斯兰姆奥普托半导体有限责任公司 光电子器件的制造
CN106104820A (zh) * 2014-03-25 2016-11-09 3M创新有限公司 具有共面导电零件的柔性电路及其制造方法
CN106663731A (zh) * 2014-08-05 2017-05-10 西铁城电子株式会社 半导体装置及其制造方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003304000A (ja) 2002-04-08 2003-10-24 Citizen Electronics Co Ltd 発光ダイオード用パッケージの製造方法
US8044418B2 (en) * 2006-07-13 2011-10-25 Cree, Inc. Leadframe-based packages for solid state light emitting devices
JP5326705B2 (ja) 2009-03-17 2013-10-30 日亜化学工業株式会社 発光装置
JP5367668B2 (ja) * 2009-11-17 2013-12-11 スタンレー電気株式会社 発光装置およびその製造方法
KR101157530B1 (ko) 2009-12-16 2012-06-22 인탑스엘이디 주식회사 발광다이오드 패키지 및 그 제조방법
TW201250964A (en) * 2011-01-27 2012-12-16 Dainippon Printing Co Ltd Resin-attached lead frame, method for manufacturing same, and lead frame
KR101852388B1 (ko) 2011-04-28 2018-04-26 엘지이노텍 주식회사 발광 소자 패키지
CN103078040B (zh) 2011-08-22 2016-12-21 Lg伊诺特有限公司 发光器件封装件和光装置
KR101853067B1 (ko) * 2011-08-26 2018-04-27 엘지이노텍 주식회사 발광 소자 패키지
JP6015231B2 (ja) 2011-08-26 2016-10-26 大日本印刷株式会社 Ｌｅｄ素子搭載用基板及びその製造方法、並びにｌｅｄ素子搭載用基板を用いた半導体装置
US9263658B2 (en) * 2012-03-05 2016-02-16 Seoul Viosys Co., Ltd. Light-emitting device and method of manufacturing the same
CN104103734B (zh) * 2013-04-02 2017-03-01 展晶科技(深圳)有限公司 发光二极管封装结构
KR20150001268A (ko) 2013-06-27 2015-01-06 엘지이노텍 주식회사 발광 소자 패키지
US9583689B2 (en) * 2013-07-12 2017-02-28 Lite-On Opto Technology (Changzhou) Co., Ltd. LED package
KR101541035B1 (ko) 2013-08-16 2015-08-03 (주)포인트엔지니어링 절단에 따른 버를 방지하는 칩원판 및 이를 제조하는 방법
DE102014103034A1 (de) 2014-03-07 2015-09-10 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
JP6185415B2 (ja) 2014-03-27 2017-08-23 株式会社東芝 半導体発光装置
EP2950358B1 (en) * 2014-05-29 2021-11-17 Suzhou Lekin Semiconductor Co., Ltd. Light emitting device package
KR20160038568A (ko) * 2014-09-30 2016-04-07 (주)포인트엔지니어링 복수의 곡면 캐비티를 포함하는 칩 기판
KR101668353B1 (ko) * 2014-11-03 2016-10-21 (주)포인트엔지니어링 칩 기판 및 칩 패키지 모듈
JP6765804B2 (ja) * 2014-11-28 2020-10-07 エルジー イノテック カンパニー リミテッド 発光素子パッケージ
US10211378B2 (en) * 2016-01-29 2019-02-19 Nichia Corporation Light emitting device and method for manufacturing same
US9893250B1 (en) * 2016-12-16 2018-02-13 Nichia Corporation Light emitting device having silicone resin-based sealing member

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003168828A (ja) * 2001-12-04 2003-06-13 Citizen Electronics Co Ltd 表面実装型発光ダイオード及びその製造方法
CN1855561A (zh) * 2005-04-30 2006-11-01 三星电机株式会社 发光二极管封装的制造方法
CN101267011A (zh) * 2007-03-13 2008-09-17 夏普株式会社 半导体发光装置、半导体发光装置用多引线框架
CN102142513A (zh) * 2010-01-29 2011-08-03 株式会社东芝 Led封装及制作led封装的方法
CN104584244A (zh) * 2012-08-03 2015-04-29 普因特工程有限公司 用于制造光学装置的方法及由该方法制造的光学装置
CN104937732A (zh) * 2012-12-12 2015-09-23 普因特工程有限公司 Led金属基板封装及其制造方法
CN106030832A (zh) * 2014-03-04 2016-10-12 奥斯兰姆奥普托半导体有限责任公司 光电子器件的制造
CN106104820A (zh) * 2014-03-25 2016-11-09 3M创新有限公司 具有共面导电零件的柔性电路及其制造方法
CN104037316A (zh) * 2014-06-19 2014-09-10 广州市鸿利光电股份有限公司 一种led无机封装支架及其封装方法
CN106663731A (zh) * 2014-08-05 2017-05-10 西铁城电子株式会社 半导体装置及其制造方法

Also Published As

Publication number Publication date
CN109427946A (zh) 2019-03-05
KR20190026581A (ko) 2019-03-13
TWI802587B (zh) 2023-05-21
US20190074422A1 (en) 2019-03-07
JP6755911B2 (ja) 2020-09-16
TW201921728A (zh) 2019-06-01
US11335843B2 (en) 2022-05-17
JP2019047123A (ja) 2019-03-22
KR102641336B1 (ko) 2024-02-28

Similar Documents

Publication Publication Date Title
CN109964323B (zh) 发光器件封装和包括该发光器件封装的光源设备
CN109427946B (zh) 半导体器件封装件
US11355674B2 (en) Semiconductor device package
KR20180131303A (ko) 발광소자 패키지 및 광원 장치
KR20190006889A (ko) 발광소자 패키지
KR20190083042A (ko) 발광소자 패키지
KR20190025333A (ko) 발광소자 패키지
EP3451396B1 (en) Semiconductor device package
US12382766B2 (en) Semiconductor device package
KR102607890B1 (ko) 반도체 소자 패키지
KR102509075B1 (ko) 반도체 소자 패키지
KR102537080B1 (ko) 반도체 소자 패키지
KR102509089B1 (ko) 반도체 소자 패키지
US11715817B2 (en) Light-emitting element package and light-emitting element module including same
KR102432034B1 (ko) 반도체 소자 패키지
KR102531150B1 (ko) 광학렌즈 및 이를 포함하는 반도체 소자 패키지
KR102518578B1 (ko) 반도체 소자 패키지 및 이를 포함하는 발광모듈
KR20190014854A (ko) 발광소자 패키지
KR20200136149A (ko) 반도체 소자 패키지
KR20190087710A (ko) 발광소자 패키지
KR20190010353A (ko) 발광소자 패키지
KR20190093282A (ko) 발광소자 패키지
KR20190031095A (ko) 발광소자 패키지 및 이를 포함하는 조명장치
KR20190014323A (ko) 발광소자 패키지 및 그 제조방법
KR20190001384A (ko) 발광소자 패키지 및 광원 장치

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right

Effective date of registration: 20210802

Address after: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Applicant after: Suzhou Leyu Semiconductor Co.,Ltd.

Address before: Seoul City, Korea

Applicant before: LG INNOTEK Co.,Ltd.

TA01 Transfer of patent application right
GR01 Patent grant
GR01 Patent grant
CP03 Change of name, title or address

Address after: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Liyu Semiconductor Co.,Ltd.

Country or region after: China

Address before: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee before: Suzhou Leyu Semiconductor Co.,Ltd.

Country or region before: China

CP03 Change of name, title or address