JP6755197B2 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
JP6755197B2
JP6755197B2 JP2017007666A JP2017007666A JP6755197B2 JP 6755197 B2 JP6755197 B2 JP 6755197B2 JP 2017007666 A JP2017007666 A JP 2017007666A JP 2017007666 A JP2017007666 A JP 2017007666A JP 6755197 B2 JP6755197 B2 JP 6755197B2
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Japan
Prior art keywords
connection terminal
case body
outer peripheral
semiconductor device
inner peripheral
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JP2017007666A
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English (en)
Japanese (ja)
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JP2018117071A (ja
JP2018117071A5 (https=
Inventor
隼人 永水
隼人 永水
琢郎 森
琢郎 森
義貴 大坪
義貴 大坪
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2017007666A priority Critical patent/JP6755197B2/ja
Priority to US15/725,303 priority patent/US10319661B2/en
Priority to DE102017221427.9A priority patent/DE102017221427B4/de
Priority to CN201810053857.8A priority patent/CN108336057B/zh
Publication of JP2018117071A publication Critical patent/JP2018117071A/ja
Publication of JP2018117071A5 publication Critical patent/JP2018117071A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/10—Arrangements for heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/01—Manufacture or treatment
    • H10W40/03—Manufacture or treatment of arrangements for cooling
    • H10W40/037—Assembling together parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/20—Conductive package substrates serving as an interconnection, e.g. metal plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/13—Containers comprising a conductive base serving as an interconnection
    • H10W76/136—Containers comprising a conductive base serving as an interconnection having other interconnections perpendicular to the conductive base
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/15—Containers comprising an insulating or insulated base
    • H10W76/153—Containers comprising an insulating or insulated base having interconnections in passages through the insulating or insulated base
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/15—Containers comprising an insulating or insulated base
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/40—Fillings or auxiliary members in containers, e.g. centering rings
    • H10W76/42—Fillings
    • H10W76/47—Solid or gel fillings

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Ceramic Engineering (AREA)
JP2017007666A 2017-01-19 2017-01-19 半導体装置およびその製造方法 Active JP6755197B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2017007666A JP6755197B2 (ja) 2017-01-19 2017-01-19 半導体装置およびその製造方法
US15/725,303 US10319661B2 (en) 2017-01-19 2017-10-05 Semiconductor device and method of manufacturing the same
DE102017221427.9A DE102017221427B4 (de) 2017-01-19 2017-11-29 Halbleiteranordnung und Verfahren zum Herstellen derselben
CN201810053857.8A CN108336057B (zh) 2017-01-19 2018-01-19 半导体装置及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017007666A JP6755197B2 (ja) 2017-01-19 2017-01-19 半導体装置およびその製造方法

Publications (3)

Publication Number Publication Date
JP2018117071A JP2018117071A (ja) 2018-07-26
JP2018117071A5 JP2018117071A5 (https=) 2019-07-11
JP6755197B2 true JP6755197B2 (ja) 2020-09-16

Family

ID=62716859

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017007666A Active JP6755197B2 (ja) 2017-01-19 2017-01-19 半導体装置およびその製造方法

Country Status (4)

Country Link
US (1) US10319661B2 (https=)
JP (1) JP6755197B2 (https=)
CN (1) CN108336057B (https=)
DE (1) DE102017221427B4 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170084521A1 (en) * 2015-09-18 2017-03-23 Industrial Technology Research Institute Semiconductor package structure
JP7190985B2 (ja) * 2019-08-05 2022-12-16 三菱電機株式会社 半導体装置
DE112021000211B4 (de) * 2020-07-09 2025-08-21 Fuji Electric Co., Ltd. Halbleitervorrichtung und Verfahren zum Herstellen derselben
JP7479310B2 (ja) * 2021-01-20 2024-05-08 三菱電機株式会社 半導体モジュール

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06334070A (ja) * 1993-05-27 1994-12-02 Sanyo Electric Co Ltd 混成集積回路装置
JP2720009B2 (ja) * 1993-11-29 1998-02-25 株式会社三社電機製作所 電力用半導体モジュール
JP5041798B2 (ja) * 2006-12-15 2012-10-03 三菱電機株式会社 半導体装置
US7944042B2 (en) 2007-03-08 2011-05-17 Fuji Electric Device Technology Co., Ltd. Semiconductor device and method of manufacturing same
JP4985116B2 (ja) * 2007-03-08 2012-07-25 富士電機株式会社 半導体装置およびその製造方法
JP4858336B2 (ja) * 2007-07-10 2012-01-18 三菱電機株式会社 電力用半導体装置
JP2009130007A (ja) * 2007-11-21 2009-06-11 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP4894784B2 (ja) * 2008-02-27 2012-03-14 三菱電機株式会社 半導体装置とその製造方法
JP5211364B2 (ja) 2010-05-07 2013-06-12 三菱電機株式会社 半導体装置
WO2011149017A1 (ja) * 2010-05-27 2011-12-01 京セラ株式会社 半導体モジュール基板および半導体モジュール
JP2013051366A (ja) * 2011-08-31 2013-03-14 Hitachi Ltd パワーモジュール及びその製造方法
JP2013069782A (ja) * 2011-09-21 2013-04-18 Toshiba Corp 半導体装置
WO2013121491A1 (ja) * 2012-02-13 2013-08-22 パナソニック株式会社 半導体装置およびその製造方法
JP5935374B2 (ja) 2012-02-17 2016-06-15 富士電機株式会社 半導体モジュールの製造方法
KR101443972B1 (ko) * 2012-10-31 2014-09-23 삼성전기주식회사 일체형 전력 반도체 모듈
KR101443985B1 (ko) * 2012-12-14 2014-11-03 삼성전기주식회사 전력 모듈 패키지
US9691674B2 (en) * 2014-03-19 2017-06-27 Fuji Electric Co., Ltd. Semiconductor device and method for manufacturing same
JP6341822B2 (ja) * 2014-09-26 2018-06-13 三菱電機株式会社 半導体装置
US9979105B2 (en) * 2015-05-15 2018-05-22 Mitsubishi Electric Corporation Power semiconductor device
JP6541593B2 (ja) * 2015-05-15 2019-07-10 三菱電機株式会社 電力用半導体装置
JP6625044B2 (ja) 2016-12-28 2019-12-25 三菱電機株式会社 半導体装置およびその製造方法

Also Published As

Publication number Publication date
US10319661B2 (en) 2019-06-11
JP2018117071A (ja) 2018-07-26
CN108336057B (zh) 2022-01-28
CN108336057A (zh) 2018-07-27
DE102017221427B4 (de) 2022-08-25
US20180204782A1 (en) 2018-07-19
DE102017221427A1 (de) 2018-07-19

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