JP7479310B2 - 半導体モジュール - Google Patents
半導体モジュール Download PDFInfo
- Publication number
- JP7479310B2 JP7479310B2 JP2021007132A JP2021007132A JP7479310B2 JP 7479310 B2 JP7479310 B2 JP 7479310B2 JP 2021007132 A JP2021007132 A JP 2021007132A JP 2021007132 A JP2021007132 A JP 2021007132A JP 7479310 B2 JP7479310 B2 JP 7479310B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor module
- resin case
- electrode
- side wall
- potential electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 84
- 239000011347 resin Substances 0.000 claims description 57
- 229920005989 resin Polymers 0.000 claims description 57
- 239000000758 substrate Substances 0.000 claims description 15
- 239000011810 insulating material Substances 0.000 claims description 11
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 8
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 7
- 239000012212 insulator Substances 0.000 claims description 6
- 230000000052 comparative effect Effects 0.000 claims description 3
- 238000005452 bending Methods 0.000 description 17
- 239000000463 material Substances 0.000 description 8
- 238000000465 moulding Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000003754 machining Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/62—Protection against overvoltage, e.g. fuses, shunts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/049—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being perpendicular to the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/645—Inductive arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1027—IV
- H01L2924/10272—Silicon Carbide [SiC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/171—Frame
- H01L2924/1715—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
図1は実施の形態1の半導体モジュール100の構成を示す平面図であり、内部構成を明示するために樹脂ケースCSの上面を省略している。また、図2は半導体モジュール100の構成を示す断面図であり、図1におけるA-A線での矢示方向断面図である。
以上説明した実施の形態1の半導体モジュール100においては、高電位電極HT、低電位電極LTおよび出力電極OTが、いずれも傾斜部SLを1箇所ずつ備えた構成を示したが、傾斜部は各電極で複数箇所に設けても良い。
図10および図11は、それぞれ実施の形態3の半導体モジュール300の製造方法を説明する平面図および断面図である。なお、図10および図11においては、図1および図2を用いて説明した半導体モジュール100と同一の構成については同一の符号を付し、重複する説明は省略する。
電位差の大きい高電位電極HTおよび低電位電極LTが組み込まれたケースCSの側壁部分を別体で形成する場合、ケースCSの他の部分とは異なる樹脂で形成することができる。例えば、電位差の大きい高電位電極HTおよび低電位電極LTを埋め込む樹脂を、CTI(Comparative Tracking Index)が高い樹脂とすることで、沿面放電が起こりにくくなるので、電極間距離をより狭くしても絶縁性を確保することができ、高電位電極HTおよび低電位電極LTをより近接して配置することでインダクタンスの低減の効果をさらに向上させることができる。
図12は実施の形態4の半導体モジュール400の構成を示す断面図であり、図1におけるA-A線での矢示方向断面に相当する図である。なお、図12においては、図1および図2を用いて説明した半導体モジュール100と同一の構成については同一の符号を付し、重複する説明は省略する。
以上説明した実施の形態1~4の半導体モジュール100~400においては、半導体素子SEの構成材料については言及していないが、半導体素子SEの構成材料としては、珪素(Si)半導体で構成することもでき、炭化珪素(SiC)半導体で構成することもできる。
Claims (9)
- 半導体素子と、
前記半導体素子を搭載する基板と、
前記基板を搭載する放熱板と、
前記基板および前記半導体素子を収納する樹脂ケースと、
前記半導体素子の主電流が流れる第1および第2の主電流電極と、を備え、
前記第1および第2の主電流電極は、
それぞれの一方端が前記基板上の回路パターンに接合され、それぞれの他方端が前記樹脂ケースの外部に突出するように前記樹脂ケースの側壁を貫通して組み込まれ、それぞれ少なくとも一部が互いに間を開けて平行に重なり合う重なり部分を有すると共に、それぞれ前記樹脂ケースの外部に突出する外部突出部と、前記樹脂ケースの内部に突出する内部突出部との間に設けられた傾斜部を有し、
前記重なり部分は、前記内部突出部と前記傾斜部を含む、半導体モジュール。 - 前記第1および第2の主電流電極は、
それぞれの前記内部突出部に設けられた内部傾斜部を有する、請求項1記載の半導体モジュール。 - 前記樹脂ケースは、
前記第1および第2の主電流電極が組み込まれた前記側壁が、前記樹脂ケースの他の部分とは別体で設けられ、
前記側壁と前記他の部分との間に継ぎ目を有する、請求項1記載の半導体モジュール。 - 前記樹脂ケースの前記側壁は、
比較トラッキング指数が前記他の部分よりも高い樹脂で形成される、請求項3記載の半導体モジュール。 - 前記側壁の前記樹脂は、
前記比較トラッキング指数が600以上である、請求項4記載の半導体モジュール。 - 前記第1および第2の主電流電極の前記重なり部分の電極間に設けられた絶縁物をさらに備える、請求項1記載の半導体モジュール。
- 前記絶縁物は、
ゲル状の絶縁材を硬化させた絶縁材または絶縁紙で構成される、請求項6記載の半導体モジュール。 - 前記第1および第2の主電流電極は、
前記側壁に組み込まれる、請求項1記載の半導体モジュール。 - 前記半導体素子は、炭化珪素半導体素子である、請求項1記載の半導体モジュール。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021007132A JP7479310B2 (ja) | 2021-01-20 | 2021-01-20 | 半導体モジュール |
US17/455,114 US11710671B2 (en) | 2021-01-20 | 2021-11-16 | Semiconductor module |
DE102022100021.4A DE102022100021A1 (de) | 2021-01-20 | 2022-01-03 | Halbleitermodul |
CN202210041032.0A CN114823636A (zh) | 2021-01-20 | 2022-01-14 | 半导体模块 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021007132A JP7479310B2 (ja) | 2021-01-20 | 2021-01-20 | 半導体モジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2022111597A JP2022111597A (ja) | 2022-08-01 |
JP7479310B2 true JP7479310B2 (ja) | 2024-05-08 |
Family
ID=82217903
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021007132A Active JP7479310B2 (ja) | 2021-01-20 | 2021-01-20 | 半導体モジュール |
Country Status (4)
Country | Link |
---|---|
US (1) | US11710671B2 (ja) |
JP (1) | JP7479310B2 (ja) |
CN (1) | CN114823636A (ja) |
DE (1) | DE102022100021A1 (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008098585A (ja) | 2006-10-16 | 2008-04-24 | Fuji Electric Device Technology Co Ltd | 半導体装置及び半導体装置の製造方法 |
JP2010010505A (ja) | 2008-06-30 | 2010-01-14 | Hitachi Ltd | パワーモジュール及び電力変換装置 |
JP2016162773A (ja) | 2015-02-26 | 2016-09-05 | ローム株式会社 | 半導体装置 |
JP2018117071A (ja) | 2017-01-19 | 2018-07-26 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6021323B2 (ja) | 1977-07-26 | 1985-05-27 | 株式会社クボタ | 電子式料金はかり |
JP2725952B2 (ja) * | 1992-06-30 | 1998-03-11 | 三菱電機株式会社 | 半導体パワーモジュール |
JP3314610B2 (ja) * | 1996-03-19 | 2002-08-12 | 富士電機株式会社 | 半導体装置およびその組立方法 |
-
2021
- 2021-01-20 JP JP2021007132A patent/JP7479310B2/ja active Active
- 2021-11-16 US US17/455,114 patent/US11710671B2/en active Active
-
2022
- 2022-01-03 DE DE102022100021.4A patent/DE102022100021A1/de active Pending
- 2022-01-14 CN CN202210041032.0A patent/CN114823636A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008098585A (ja) | 2006-10-16 | 2008-04-24 | Fuji Electric Device Technology Co Ltd | 半導体装置及び半導体装置の製造方法 |
JP2010010505A (ja) | 2008-06-30 | 2010-01-14 | Hitachi Ltd | パワーモジュール及び電力変換装置 |
JP2016162773A (ja) | 2015-02-26 | 2016-09-05 | ローム株式会社 | 半導体装置 |
JP2018117071A (ja) | 2017-01-19 | 2018-07-26 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN114823636A (zh) | 2022-07-29 |
DE102022100021A1 (de) | 2022-07-21 |
US11710671B2 (en) | 2023-07-25 |
JP2022111597A (ja) | 2022-08-01 |
US20220230929A1 (en) | 2022-07-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5841500B2 (ja) | スタック型ハーフブリッジ電力モジュール | |
US11532600B2 (en) | Semiconductor module | |
US20080054298A1 (en) | Power module with laminar interconnect | |
US9159715B2 (en) | Miniaturized semiconductor device | |
CN109599384B (zh) | 半导体器件 | |
US12087699B2 (en) | Semiconductor module | |
CN110783283B (zh) | 具有对称布置的功率连接端的半导体封装及其制造方法 | |
US10600717B2 (en) | Semiconductor device | |
US11876028B2 (en) | Package with electrically insulated carrier and at least one step on encapsulant | |
US20230056722A1 (en) | Power module with improved electrical and thermal characteristics | |
KR20190095144A (ko) | 반도체 장치 | |
JP2020136516A (ja) | 半導体モジュールとそれを用いた電力変換装置 | |
WO2020229114A1 (en) | Semiconductor module | |
CN110739294B (zh) | 功率模块结构 | |
JP7479310B2 (ja) | 半導体モジュール | |
CN111354710A (zh) | 半导体装置及其制造方法 | |
US11694948B2 (en) | Semiconductor device and semiconductor module using same | |
WO2021229859A1 (ja) | 半導体装置、バスバー及び電力変換装置 | |
CN115206919A (zh) | 半导体装置 | |
CN111354709B (zh) | 半导体装置及其制造方法 | |
JP7278439B1 (ja) | 半導体装置及びそれを用いた電力変換装置 | |
WO2021015050A1 (ja) | 電気回路装置 | |
JP2019140364A (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20230127 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20231120 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20231128 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240118 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20240326 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20240423 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7479310 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |