JP6746211B2 - ウェーハの加工方法 - Google Patents
ウェーハの加工方法 Download PDFInfo
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- JP6746211B2 JP6746211B2 JP2016183871A JP2016183871A JP6746211B2 JP 6746211 B2 JP6746211 B2 JP 6746211B2 JP 2016183871 A JP2016183871 A JP 2016183871A JP 2016183871 A JP2016183871 A JP 2016183871A JP 6746211 B2 JP6746211 B2 JP 6746211B2
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- wafer
- modified layer
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- grinding
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- 238000003672 processing method Methods 0.000 title claims description 19
- 239000000463 material Substances 0.000 claims description 63
- 238000000034 method Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 6
- 235000012431 wafers Nutrition 0.000 description 135
- 239000010410 layer Substances 0.000 description 130
- 238000010438 heat treatment Methods 0.000 description 21
- 229920000139 polyethylene terephthalate Polymers 0.000 description 15
- 239000005020 polyethylene terephthalate Substances 0.000 description 15
- 239000003292 glue Substances 0.000 description 13
- 239000011521 glass Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000002407 reforming Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- FGRBYDKOBBBPOI-UHFFFAOYSA-N 10,10-dioxo-2-[4-(N-phenylanilino)phenyl]thioxanthen-9-one Chemical compound O=C1c2ccccc2S(=O)(=O)c2ccc(cc12)-c1ccc(cc1)N(c1ccccc1)c1ccccc1 FGRBYDKOBBBPOI-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Optics & Photonics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Dicing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Laser Beam Processing (AREA)
Description
1a 表面
1b 裏面
1c 第1の方向
1d 第2の方向
3 ストリート
3a 第1のストリート
3b 第2のストリート
5 デバイス
7 表面保護部材
7a 高剛性基材
7b 糊層
9 改質層
9a 第1の改質層
9b 第2の改質層
2 チャックテーブル
2a 枠体
4 保持部
6 吸引源
8 吸引路
10 加熱ユニット
10a 枠体
12 発熱体
14 プレート
16 断熱材
18 ローラー
20 レーザ加工装置
22 チャックテーブル
22a 保持面
24 加工ヘッド
26 研削装置
28 スピンドル
30 研削ホイール
32 研削砥石
34 チャックテーブル
34a 保持面
Claims (3)
- 交差する複数のストリートで区画された各領域にそれぞれデバイスが形成された表面を有するウェーハの加工方法であって、
ウェーハの該表面に高剛性基材を有する表面保護部材を貼着する表面保護部材貼着ステップと、
該表面保護部材貼着ステップを実施した後、ウェーハに対して透過性を有する波長のレーザビームを該ストリートに沿ってウェーハの裏面側から照射してウェーハの内部に改質層を形成する改質層形成ステップと、
該改質層形成ステップを実施した後、ウェーハを該裏面側から研削して薄化する研削ステップと、を備え、
該改質層形成ステップまたは研削ステップでは、該改質層から該ウェーハの表面に至るクラックを形成し、
該研削ステップにおいては、該クラックを境界としてウェーハが分割されて個々のチップが形成され、
該複数のストリートは、第1の方向に連続して伸長する第1のストリートと、該第1の方向と交差する第2の方向に伸長する第2のストリートと、を含み、
該改質層形成ステップで形成される該改質層は、該第1のストリートに沿った第1の改質層と、該第2のストリートに沿った第2の改質層と、を含み、
該第1の改質層は、該第2のストリートを境に一方側の第1の部分と、他方側の第2の部分と、を有し、
該改質層形成ステップでは、該第1のストリートにおいて該第1の改質層の該第1の部分と、該第1の改質層の該第2の部分と、は互いに該第2の方向にずれて形成されることを特徴とするウェーハの加工方法。 - 該高剛性基材は、硬質プレートであることを特徴とする、請求項1に記載のウェーハの加工方法。
- 該第1の改質層の該第1の部分と、該第1の改質層の該第2の部分と、は、該第2の改質層と隣接しており、
該改質層形成ステップでは、該第1の改質層の該第1の部分と、該第1の改質層の該第2の部分と、は、該第2の改質層から離間するように形成されることを特徴とする、請求項1または請求項2に記載のウェーハの加工方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016183871A JP6746211B2 (ja) | 2016-09-21 | 2016-09-21 | ウェーハの加工方法 |
TW106127558A TWI739882B (zh) | 2016-09-21 | 2017-08-15 | 晶圓的加工方法 |
CN201710820996.4A CN107863315B (zh) | 2016-09-21 | 2017-09-13 | 晶片的加工方法 |
KR1020170120251A KR102294249B1 (ko) | 2016-09-21 | 2017-09-19 | 웨이퍼의 가공 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016183871A JP6746211B2 (ja) | 2016-09-21 | 2016-09-21 | ウェーハの加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018049905A JP2018049905A (ja) | 2018-03-29 |
JP6746211B2 true JP6746211B2 (ja) | 2020-08-26 |
Family
ID=61699383
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2016183871A Active JP6746211B2 (ja) | 2016-09-21 | 2016-09-21 | ウェーハの加工方法 |
Country Status (4)
Country | Link |
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JP (1) | JP6746211B2 (ja) |
KR (1) | KR102294249B1 (ja) |
CN (1) | CN107863315B (ja) |
TW (1) | TWI739882B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109541281A (zh) * | 2018-12-26 | 2019-03-29 | 新纳传感系统有限公司 | 玻璃隔离器件及其制造方法、电流传感器 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06275714A (ja) * | 1993-03-22 | 1994-09-30 | Mitsubishi Electric Corp | 半導体レーザ装置素子基板、及び半導体レーザ装置の製造方法 |
JP2003001443A (ja) * | 2000-09-13 | 2003-01-08 | Hamamatsu Photonics Kk | レーザ加工装置 |
JP4074758B2 (ja) * | 2001-06-18 | 2008-04-09 | 株式会社ディスコ | 半導体ウエーハの加工方法 |
KR100715576B1 (ko) | 2002-03-12 | 2007-05-09 | 하마마츠 포토닉스 가부시키가이샤 | 기판의 분할 방법 |
JP4240362B2 (ja) | 2002-12-02 | 2009-03-18 | 住友電気工業株式会社 | 化合物半導体ウエハの劈開方法 |
JP4494728B2 (ja) | 2003-05-26 | 2010-06-30 | 株式会社ディスコ | 非金属基板の分割方法 |
JP4634089B2 (ja) | 2004-07-30 | 2011-02-16 | 浜松ホトニクス株式会社 | レーザ加工方法 |
JP5090897B2 (ja) | 2007-12-28 | 2012-12-05 | 株式会社ディスコ | ウェーハの分割方法 |
JP2010123723A (ja) * | 2008-11-19 | 2010-06-03 | Disco Abrasive Syst Ltd | ウエーハのレーザー加工方法 |
JP5395411B2 (ja) * | 2008-11-20 | 2014-01-22 | 株式会社ディスコ | ウエーハのレーザー加工方法 |
JP5501060B2 (ja) * | 2009-04-02 | 2014-05-21 | 日東電工株式会社 | 半導体ウエハ保護用粘着シートの貼り合わせ方法、及びこの貼り合わせ方法に用いる半導体ウエハ保護用粘着シート |
JP2011108708A (ja) | 2009-11-13 | 2011-06-02 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP5625521B2 (ja) | 2010-06-16 | 2014-11-19 | 豊田合成株式会社 | レーザ加工方法 |
JP5733954B2 (ja) * | 2010-11-15 | 2015-06-10 | 株式会社ディスコ | 光デバイスウエーハの分割方法 |
JP2014017434A (ja) * | 2012-07-11 | 2014-01-30 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP6053381B2 (ja) | 2012-08-06 | 2016-12-27 | 株式会社ディスコ | ウェーハの分割方法 |
JP6059499B2 (ja) * | 2012-10-05 | 2017-01-11 | リンテック株式会社 | 表面保護シート |
JP6101468B2 (ja) | 2012-10-09 | 2017-03-22 | 株式会社ディスコ | ウェーハの加工方法 |
JP5598801B2 (ja) | 2012-12-18 | 2014-10-01 | 株式会社レーザーシステム | レーザーダイシング方法、チップの製造方法およびレーザー加工装置 |
JP6045361B2 (ja) | 2013-01-17 | 2016-12-14 | 株式会社ディスコ | ウエーハの加工方法 |
JP6033116B2 (ja) * | 2013-02-22 | 2016-11-30 | 株式会社ディスコ | 積層ウェーハの加工方法および粘着シート |
JP2015138815A (ja) * | 2014-01-21 | 2015-07-30 | 株式会社ディスコ | 光デバイス及び光デバイスの加工方法 |
JP6277017B2 (ja) * | 2014-03-03 | 2018-02-07 | 株式会社ディスコ | 光デバイス |
JP2015201585A (ja) | 2014-04-10 | 2015-11-12 | 株式会社ディスコ | ウェーハの加工方法 |
-
2016
- 2016-09-21 JP JP2016183871A patent/JP6746211B2/ja active Active
-
2017
- 2017-08-15 TW TW106127558A patent/TWI739882B/zh active
- 2017-09-13 CN CN201710820996.4A patent/CN107863315B/zh active Active
- 2017-09-19 KR KR1020170120251A patent/KR102294249B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
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KR20180032184A (ko) | 2018-03-29 |
CN107863315A (zh) | 2018-03-30 |
JP2018049905A (ja) | 2018-03-29 |
TW201820435A (zh) | 2018-06-01 |
CN107863315B (zh) | 2023-04-14 |
KR102294249B1 (ko) | 2021-08-25 |
TWI739882B (zh) | 2021-09-21 |
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