200520880 ⑴ 九、發明說明 [發明所屬之技術領域】 本發明，是關於一種使雷射光線沿著形成在夾盤台所 保持的被加工物上的分割預定線進行照射的雷射加工方 法。 【先前技術〕 於半導體元件製造步驟中，在大致形成爲圓板形狀的 __ 半導體晶圓的表面由配列成格子狀的界道（分割預定線） 劃分爲複數區域，於該劃分形成的區域形成IC、LSI等電 路。接著，是沿著分割預定線對半導體晶圓進行切割來分 割電路形成區域以製造出各個半導體晶片。此外，對於藍 寶石基板的表面層疊著氮化鎵類化合物半導體等的光元件 晶圓也疋沿者分割預疋線來進fj切割以分割形成爲各個發 光二極體、激光二極體等的光元件，廣泛地被利用在電機 器上。 # 上述沿著半導體晶圓或光元件晶圓等的分割預定線進 行的切割，通常，是由被稱爲切割機的切割裝置來執行。 該切割裝置’具備有：對半導體晶圓或光元件晶圓等加工 · 物進行保持的夾盤台；對該夾盤台所保持的被加工物進行 · 切割的切割手段；及，可使夾盤台和切割手段進行相對性 移動的移動手段。切割手段，是包含高速旋轉順暢的旋轉 心軸和安裝在在該心軸上的切割刀刃。切割刀刃是由圓盤 狀的底盤和安裝在該底盤側面外周部的環狀利刃所形成， -4 - 200520880 (2) 利刃是藉由用電鑄將例如粒徑3 // m程度的鑽石砥粒固定 在底盤上來形成厚度20 // m程度。另，爲使被加工物在 被切割成各個半導體時不致於零亂分散，所以是將被加工 物形成爲是黏貼在被安裝於環狀裝框架的切割膠帶上的狀 態來進行切割。 然而，藍寶石基板、碳化矽基板、鋰鉅鐵礦基板等因 莫氏硬度高，所以要用上述切割刀刃來切斷並不容易。此 外，因切割刀刃具有2 0 // m程度的厚度，所以劃分元件 的分割預定線其寬度是需要有5 0 // m程度。因此，例如 是爲3 0 0 /i m X 3 00 // m的元件時，則分割預定線所佔據的 面積比率大，會有生產性差的問題。 另一方面，近年來半導體晶圓等被加工物的分割方 法，也嘗試著是使用對該被加工物是具有穿透性的雷射光 線，將聚光點對準應該分割的區域內部來進行雷射光線照 射的雷射加工方法。使用該雷射加工方法的分割方法，是 將聚光點從被加工物的一方的面側對準內部來進行對被加 工物是具有穿透性的例如紅外線區域的雷射光線照射，沿 著分割預定線在被加工物的內部連續性形成變質層，藉由 是沿著因該變質層的形成而降低強度的分割預定線施加外 力，來分割被加工物。（例如參照專利文獻1 ) 〔專利文獻1〕日本特開平2 0 0- 1 9 2 3 6 7號公報 【發明內容】 〔發明欲解決之課題〕 -5- 200520880 (3) 狀裝 雷射 術性 物照 台。 〔用 雷射 光線 進行 工物 驟； 護盤 的被 射光 射照 保護 射步 在實 盤上 然而，當將藍寶石基板等形成爲是黏貼在被安裝於環 框架的切割膠帶上的狀態來照射雷射光線時，會產生 光線透過切割膠帶損傷到夾盤台的問題。 本發明是有鑑於上述問題狀況而爲的發明，其主要技 的課題是，提供一種雷射加工方法，即使是對被加工 射雷射光線也能夠防止損傷到保持著被加工物的夾盤 以解決課題之手段〕 爲解決上述主要技術課題，根據本發明時，所提供的 加工方法，其是爲一種利用雷射光線照射手段使雷射 沿著形成在夾盤台所保持的被加工物上的分割預定線 照射的雷射加工方法，其特徵爲，其包括有：將被加 可裝卸地固定在保護盤的表面上的被加工物固定步 將固定著被加工物的該保護盤保持在該夾盤台上的保 保持步驟；將被固定在該夾盤台所保持的該保護盤上 加工物的分割預定線和該雷射照射手段所要照射的雷 線照射位置進行位置調整的對準步驟；及，利用該雷 射手段使雷射光線沿著被固定在該夾盤台所保持的該 盤上的被加工物的分割預定線進行照射的雷射光線照 驟。 上述保護盤上所要固定的被加工物是爲複數個，以是 施該對準步驟前先實施可對該夾盤台所保持的該保護 所固定的複數個被加工物的形狀、位置、大小進行檢 -6- 200520880 (4) 測的被加工物形狀識別步驟爲佳。 於上述保護盤的表面形成有黏著層，上述被加工物固 定步驟是將被加工物黏貼在該黏著層上。 〔發明效果〕 於本發明中，因是將被加工物固定在保護盤的表面 上，以固定著該被加工物的保護盤是保持在夾盤台上的狀 態，使雷射光線沿著被加工物的分割預定線進行照射，所 以照射在被加工物上的雷射光線不會損傷到夾盤台。 [實施方式】 〔發明之最佳實施形態〕 以下，是參照所附圖面對本發明雷射加工方法的最佳 實施形態進行詳細說明。 於第1圖中，表示著本發明雷射加工方法實施用的雷 射加工裝置透視圖。 第1圖所示的雷射加工裝置，具備有大致爲長方體狀 的裝置殼2。於該裝置殼2內，對被加工物進行保持的夾 盤台3是配設成可朝切割運送方法的箭頭符號X所示方 法進行移動。夾盤台3 ’具備有：吸附夾盤支撐台3 1 ; 及，由被安裝在該吸附夾盤支撐台3 ]上的多孔陶瓷所形 成的吸附夾盤3 2 ’是利用未圖示的吸引手段使被加工物 保持在爲該吸附夾盤3 2表面的載置面上。此外，夾盤台 3，是構成爲由未圖示的旋轉機構使其得以進行轉動。 - 7 - 200520880 (5) 圖示實施形態的雷射加工裝，具備有雷射光線照射手 段4，該雷射光線照射手段4，是被安裝在未圖示的移動 底座上構成爲可朝成爲分界方向的箭頭符號Y所示方向 及成爲切入方向的箭頭符號Z所示方向進行移動調整。雷 射光線照射手段4，如第2圖所示具備有雷射光線振盪手 段4 1和雷射光線調制手段4 2及聚光器4 3。做爲雷射光 線振盪手段4 1是可使用Y A G激光振盪器或Y V Ο 4激光振 盪器。雷射光線調制手段42，是包括有重覆頻率設定手 段421和雷射光線脈衝寬度設定手段42 2及雷射光線波長 設定手段423。構成雷射光線調制手段42的重覆頻率設 定手段42 1和雷射光線脈衝寬度設定手段422及雷射光線 波長設定手段4 23是可採用該當業者所熟知的形態，因此 在本說明書中省略這些構成的詳細說明。 上述雷射光線振盪手段4 1所振盪的雷射光線是中介 著雷射光線調制手段42到達聚光器43。雷射光線調制手 段42中的重覆頻率設定手段42是將雷射光線形成爲指定 重覆頻率的脈衝雷射光線，雷射光線脈衝寬度設定手段 4 22是將脈衝雷射光線的脈衝寬度設定成指定寬，然後雷 射光線波長設定手段4 2 3是將脈衝雷射光線的波長設定成 指定値。 返回第1圖進行說明，圖示實施形態的雷射加工裝 置，具備有，可對上述夾盤台3所保持的被加工物的表面 進行檢測的第1檢測手段5 a和第2檢測手段5 b。第1檢 測手段5a及第2檢測手段5b，是由顯微鏡或CCD照相機 200520880 (6) 等的光學手段等所形成，可將檢測訊號傳送至控制手段 ό °第1檢測手段5a是於CCD照相機的畫素所構成的χ_ Υ矩陣中對夾盤台3所保持的被加工物的形狀、位置、大 小進行檢測’第2檢測手段5b是對出自於上述雷射光線 照射手段4的聚光器4 3的雷射光線應照射的區域進行檢 測。控制手段6，具備有··對第丨檢測手段5 a所檢測出 的被加工物的形狀 '位置、大小進行識別並對此進行記憶 的記憶區域；及’對第2檢測手段5b所檢測出的雷射光 線照射區域進行識別並對此進行記憶的記憶區域。該控制 裝置6 ’是對上述夾盤台3的未圖示移動手段或雷射光線 照射手段4及下述的各機構等的動作進行控制。另，圖示 實施形態的雷射加工裝置，具備有用以顯示第1檢測手段 5 a及第2檢測手段5 b所檢測出的畫像的顯示手段7。 圖示實施形態的雷射加工裝置，具備有被加工物收容 匣盒載置用的匣盒載置部S。於匣盒載置部8配設著可由 未圖示昇降手段進行上下移動的匣盒台81，匣盒9是載 置在該匣盒台8 1上。對於該匣盒9內所收容的被加工物 將於後詳細說明。圖示實施形態的雷射加工裝置’具備有 可暫時放置被收納在匣盒9內的被加工物的暫置部12， 於該暫置部]2配設有可執行被加工物位置調整的位置調 整手段1 3。此外，圖示實施形態的雷射加工裝置，具備 有因應需求對加工後的加工物進行洗淨的洗淨手段1 4 ° 再加上，圖示實施形態的雷射加工裝置，又具備有：可將 被收納在匣盒9內的加工前的被加工物搬出至被配設於暫 -9- 200520880 (7) 置部1 2的位置gj|整手段1 3的同時可將加工後的被加工物 搬入至匣盒9內的被加工物搬出·搬入手段！ 5 ;可將被 搬出至位置調整手段1 3的加工前的被加工物搬運到上述 夾盤台3上的被加工物搬運手段丨6 ;及，因應需求將在 ' 夾盤台3上雷射加工後的加工物搬運至洗淨手段1 4的洗 淨搬運手段1 7。 圖示實施形態的雷射加工裝置，是構成爲以上所述， 接著，以下主要是參照第1圖來對其動作進行說明。 鲁 在由上述雷射加工裝置對被加工物實施雷射加工時， 是將加工前的被加工物收容在上述匣盒9內，然後將收容 有被加工物的匣盒9載置在匣盒台8 1上。於此，對於匣 盒9內所收容的被加工物，是參照第3圖來進行說明。第 3圖的（a )圖所示的被加工物，是由藍寶石基板的表面 上層疊有氮化鎵類化合物半導體等的3個光元件晶圓1 〇 所形成。該光元件晶圓1 0，是形成爲校小徑的圓形狀於 其外周形成有表示結晶方位的定向平面1 01，於其表面設 · 有形成爲格子狀的分割預定線1 0 2。於圖示的實施形態 中，定向平面]01是3個由適宜的黏著劑可裝卸地固定在 保護盤1 ]上（被加工物固定步騾）。保護盤1 1，是由不 銹鋼等金屬、陶瓷、合成樹脂等具有剛性的1〜厚的 板材形成爲圓形狀。於其外周形成有可應對於上述定向平 面1 〇 1的基準部1 ] a的同時，分別在自該基準部1 1 a起形 成9 0度的角度位置上形成有位置調整部1 1 b、1 1 b。於形 成爲如此的保護盤1 1的表面，在外周部以外形成有由彈 -10- 200520880 (8) 膠樹脂或矽膠樹脂等等形成的黏著層Π 1。該黏著層]Π， 例如是可使用夕八X ^只卜γ —股份有限公司製造販賣 的橡膠薄片「< 6 乂 6君」（登錄商標）。如此一來3個 光元件晶圓1 0如第3圖的（b )圖所示是被黏貼在保護盤 1 1上所形成的黏著層1 1 1的表面。此時，3個光元件晶圓 1 〇，是被配置成定向平面1 0 1的方向對準基準部1 1 a。接 著，黏貼著3個光元件晶圓1 〇的保護盤〗丨，是被收容在 上述匣盒9內。 如上述黏貼著加工前的光元件晶圓1 0被收容在上述 匣盒9內的保護盤Π，是藉由未圖示的昇降手段使匣盒 台8 1上下移動使其被定位在搬出位置。其次，被加工物 搬出·搬入手段1 5會進行進退動作使被定位在搬出位置 上的黏貼著光元件晶圓1 0的保護盤1 1搬出至被配設於暫 置部1 2的位置調整手段1 3。被搬出至位置調整手段1 3 的黏貼著光元件晶圓1 0的保護盤1】，是由位置調整手段 】3使其位置調整在指定位置上。接著，由位置調整手段 1 3調整位置後的黏貼著加工前的光元件晶圓1 〇的保護盤 Π，是由被加工物搬運手段1 6的旋轉動作使其搬運至夾 盤台3上，然後被吸附保持在該夾盤台3上（保護盤保持 步騾）。如此一來吸附保持著黏貼有光元件晶圓1 0的保 護盤1 1的夾盤台3，是由未圖示的移動手段使其順利移 動定位在第1檢測手段5 a的正下方。 當夾盤台3被疋位在弟1檢測手段5 a的正下方時， 是由第]檢測手段5 a來對夾盤台3所保持的保護盤]]表 -11 - 200520880 Ο) 面上所黏貼的3個光元件晶圓1 〇進行照相，對各光元件 晶圓1 〇的形狀、位置、大小進行檢測，然後將檢測訊號 傳送至控制手段6。控制手段6，是對第1檢測手段5 a所 檢測出的被加工物的形狀、位置、大小進行識別並將此記 憶在記億手段（被加物形狀識別步驟）。其次，是將夾盤 台3定位在第2檢測手段5 b的正下方。當夾盤台3被定 位在第2檢測手段5 b的正下方時，是由第2檢測手段5 b 來對3個光元件晶圓1 〇各別進行分割預定線1 〇2的檢 測，然後將檢測訊號傳送至控制手段6。控制手段6，是 根據該檢測訊號來執行分割預定線1 0 2和進行雷射光線照 射的雷射光線照射手段4的聚光器4 3的位置調整時所使 用的圖案匹配等畫像處理，以順利進行雷射光線照射位置 的對準。另，關於上述被加工物形狀識別步驟及對準步驟 的詳細’請參照本申請人所申請獲准的日本特許第 3 1 7 3 0 5 2號公報。 如此一來在進行夾盤台3所保持的保護盤1 1表面上 所黏貼的3個光元件晶圓1 〇的形狀、位置 '大小的識別 的同時進行雷射光線照射位置的對準後，是將夾盤台3移 動至雷射光線照射手段4的聚光器4 3所位於的雷射光線 照射區域，針對雷射光線照射區域從雷射光線照射手段4 的聚光器4 3通過雷射光線沿著各光元件晶圓]〇的分割預 定線1 02進行照射（雷射光線照射步驟）。 於此，對雷射光線照射步驟進行說明。 於雷射光線照射步驟中，是從雷射光線照射手段4的 -12- 200520880 (ίο) 聚光器4 3邊將脈衝雷射光線從光元件晶圓1 0的表面側朝 分割預定線1 02進行照射的同時，邊配合夾盤台3使中介 著保護盤1 1被保持在該夾盤台3上的光元件晶圓1 0以指 定的運送速度（例如是2 0 0mm/秒）朝箭頭符號X所示方 向進行移動。另外，於雷射光線照射步驟中，是可使用以 下所示的紫外線激光及紅外線激光。 (1 )紫外線激光 β 光源：YAG激光或YV04激光 波長：3 5 5 n m 功率：3.0 W 重覆頻率：20kHz 脈衝寬度：〇 . 1 n s 聚光點直徑：Φ 〇 . 5 // m (2 )紅外線激# · 光源：YAG激光或YV04激光 波長：1 〇 6 4 n m 功率：5 . 1 W 重覆頻率：1 00kHz 脈衝寬度：20ns 聚光點直徑：φ 1 /i m 另，使用紫外線激光時，是於光元件晶圓]〇的表面 -13 - 200520880 (11) 沿著分割預定線1 02形成有雷射加工溝槽的同時，是藉由 激光脈衝的衝擊力來進行分割。此外，使用紅外線激光 時，是於光元件晶圓1 0的內部沿著分割預定線1 02形成 有變質層，藉由沿著該變質層施加外力來進行分割。如此 藉由雷射光線照射步騾的實施，使光元件晶圓1 0得以沿 著分割預定線1 02分割。此時，元件晶圓1 〇因是黏貼在 保護盤1 1上中介著保護盤1 1被保持在夾盤台3上，所以 照射在光元件晶圓1 0上的雷雷射光線不會損傷到夾盤台 3 〇 沿著形成在3個光元件晶圓1 0指定方向的全部分割 預定線1 02實施上述雷射光線照射步驟以後，配合夾盤台 3使被保持在該夾盤台3上的光元件晶圓1 0轉動9 0度， 沿著對上述指定方向延伸成直角的各分割預定線1 02執行 上述雷射光線照射步驟，以使光元件晶圓1 〇分割成各個 晶片。如此，於圖示實施形態中，因是將較小徑的3個光 元件晶圓1 〇黏貼在保護盤1 1上，對各光元件晶圓1 〇進 行識別，執行雷射光線照射位置的對準後，才實施雷射光 線照射步驟，所以複數個光元件晶圓1 〇以一次的雷射光 線照射步驟就能夠執行，因此能夠提昇生產性。 如此一來，藉由雷射光線照射步驟的實施將光元件晶 圓1 〇分割成各個半導體晶片後，所保持的保護盤]1黏貼 有光元件晶圓1 〇的夾盤台3，最初是將保護盤1 1返回原 先吸引保持的位置，於此解除保護盤]】的吸引保持。接 著，黏貼有光元件晶圓1 〇的保護盤]]，是因應需求由洗 -14 - 200520880 (12) 淨搬運手段1 7搬運至洗淨手段1 4，於此進行洗淨及乾 燥。如此黏貼有經洗淨及乾燥後的加工後光元件晶圓]〇 的保護盤1 1，是由被加工物搬運手段1 6搬出至配社在暫 . 置部]2的位置調整手段1 3。被搬出至位置調整手段]3 的黏貼有加工後光元件晶圓1 0的保護盤1 1，是經由被加 工物搬出·搬入手段1 5使其收納在匣盒9的指定位置 上。 【圖式簡單說明】 第1圖爲用以實施本發明雷射加工方法的雷射加工裝 置透視圖。 第2圖爲表示要裝備在第1圖所示雷射加工裝置上的 雷射光線照射手段的構成簡略方塊圖。 第3圖爲表示成爲本發明雷射加工方法所加工的被加 工物的光元件晶圓及槪略構件的透視圖。 【主要元件符號說明】 2 :雷射加工裝置的裝置殼 3 :夾盤台 4 :雷射光線照射手段 5 a :第1檢測手段 5 b :第2檢測手段 6 :控制手段 7 :顯示手段 -15 - 200520880 (13) 8 :匣盒載置部 8 1 :匣盒台 9 :匣盒 1 〇 :光元件晶圓 1 1 :保護盤 1 2 :暫置部 1 3 :位置調整手段 1 4 :洗淨手段 1 5 :被加工物搬出·搬入手段 1 6 :被加工物搬運手段 1 7 :洗淨搬運手段200520880 九 IX. Description of the invention [Technical field to which the invention belongs] The present invention relates to a laser processing method for irradiating laser light along a predetermined division line formed on a workpiece to be held on a chuck table. [Prior art] In the semiconductor device manufacturing step, the surface of the __ semiconductor wafer formed in a substantially circular plate shape is divided into a plurality of regions by boundary lines (planned division lines) arranged in a grid pattern, and the regions formed by the division Form circuits such as IC and LSI. Next, the semiconductor wafer is diced along a predetermined division line to divide the circuit formation area to manufacture each semiconductor wafer. In addition, optical element wafers such as gallium nitride-based compound semiconductors are laminated on the surface of the sapphire substrate, and the pre-cut lines are divided along the fj cut to divide the light formed into individual light emitting diodes, laser diodes, and the like Components are widely used in electric machines. # The above-mentioned dicing along a predetermined division line of a semiconductor wafer or an optical element wafer is usually performed by a cutting device called a dicing machine. The dicing apparatus is provided with a chuck table that holds a processed object such as a semiconductor wafer or an optical element wafer; a dicing means that performs a dicing process on the object held by the chuck table; and The table and the cutting means are relative moving means. The cutting means includes a rotating mandrel that rotates smoothly at high speed, and a cutting blade mounted on the mandrel. The cutting blade is formed by a disc-shaped chassis and a ring-shaped sharp blade mounted on the outer periphery of the side surface of the chassis. -4-200520880 (2) The sharp blade is made of, for example, a diamond with a particle size of 3 // m by electroforming. The granules are fixed on the chassis to form a thickness of about 20 // m. In addition, in order to prevent the processed object from being scattered when being cut into individual semiconductors, the processed object is diced in a state where it is adhered to a dicing tape attached to a ring-shaped frame. However, sapphire substrates, silicon carbide substrates, and lithium giant iron substrates have high Mohs hardness, so cutting with the cutting blade described above is not easy. In addition, since the cutting blade has a thickness of about 20m, the width of a predetermined dividing line of the dividing element needs to be about 50m. Therefore, for example, in the case of an element of 3 0 / i m X 3 00 // m, the area ratio occupied by the planned division line is large, and there is a problem of poor productivity. On the other hand, in recent years, a method of dividing a processed object such as a semiconductor wafer has also been attempted by using laser light that is transparent to the processed object, and aligning the light-condensing point with the inside of a region to be divided. Laser processing method for laser light irradiation. The segmentation method using this laser processing method is to align the condensing point from one side of the object to the inside to irradiate the object with laser light that is transparent to the object, for example, in the infrared region. The planned division line continuously forms a deteriorated layer inside the workpiece, and an external force is applied along the planned division line whose strength is reduced due to the formation of the deteriorated layer to divide the workpiece. (For example, refer to Patent Document 1) [Patent Document 1] Japanese Patent Laid-Open No. 2000- 1 9 2 3 6 7 [Summary of the Invention] [Problems to be Solved by the Invention] -5- 200520880 Sexual photos stand. [Working steps are performed with laser light; the light from the protective plate is protected against the solid disk. However, when a sapphire substrate or the like is formed on a cutting tape attached to the ring frame to illuminate the lightning When the light is radiated, there is a problem that the light is damaged to the chuck table through the cutting tape. The present invention has been made in view of the above-mentioned problems, and a main technical problem thereof is to provide a laser processing method capable of preventing damage to a chuck holding a workpiece even if laser beam is processed. Means to Solve the Problem] In order to solve the above-mentioned main technical problem, according to the present invention, a processing method is provided to use a laser light irradiation method to cause a laser beam along a workpiece to be held on a chuck table. The laser processing method for splitting a predetermined line of irradiation is characterized in that it includes a step of fixing a workpiece to be detachably fixed to a surface of a protective disk, and holding the protective disk to which the workpiece is fixed. A holding step on the chuck table; an alignment step of adjusting the position of a predetermined division line of a processed object fixed on the protective disk held by the chuck table and a laser beam irradiation position to be irradiated by the laser irradiation means; And laser light that irradiates laser light along a predetermined division line of a workpiece on the disk held by the chuck table by using the laser means According step. There are a plurality of processed objects to be fixed on the protection disk, so that the shape, position, and size of the plurality of processed objects fixed by the protection held by the chuck table can be implemented before applying the alignment step. CHECK-6- 200520880 (4) It is better to check the shape of the workpiece. An adhesive layer is formed on the surface of the protective disk, and the object fixing step is to adhere the object to the adhesive layer. [Effects of the Invention] In the present invention, the object to be processed is fixed on the surface of the protection plate, and the protection plate holding the object to be processed is held on the chuck table, so that the laser light is directed along the surface of the protection plate. The processing object is irradiated with a predetermined division line, so that the laser light irradiated on the processing object does not damage the chuck table. [Embodiments] [Best Embodiments of the Invention] Hereinafter, preferred embodiments of the laser processing method according to the present invention will be described in detail with reference to the accompanying drawings. Fig. 1 is a perspective view of a laser processing apparatus for implementing a laser processing method according to the present invention. The laser processing apparatus shown in Fig. 1 is provided with a device case 2 having a substantially rectangular parallelepiped shape. The chuck table 3 holding the workpiece in the apparatus case 2 is arranged so as to be movable toward the method shown by the arrow X in the cutting and conveying method. The chuck table 3 'is provided with an adsorption chuck support table 3 1; and an adsorption chuck 3 2' formed of porous ceramics mounted on the adsorption chuck support table 3] by suction (not shown). The means holds the workpiece on the mounting surface that is the surface of the suction chuck 32. The chuck table 3 is configured to be rotated by a rotation mechanism (not shown). -7-200520880 (5) The laser processing device according to the embodiment shown is provided with a laser light irradiation means 4 which is mounted on a mobile base (not shown) so as to be able to become The direction indicated by the arrow symbol Y in the demarcation direction and the direction indicated by the arrow symbol Z that becomes the cutting direction are moved and adjusted. The laser light irradiation means 4 includes a laser light oscillation means 41, a laser light modulation means 42, and a condenser 43 as shown in FIG. As a laser beam oscillating means 41, a Y A G laser oscillator or a Y V 04 laser oscillator can be used. The laser light modulation means 42 includes a repeating frequency setting means 421, a laser light pulse width setting means 42 2 and a laser light wavelength setting means 423. The repeating frequency setting means 42 1, the laser light pulse width setting means 422, and the laser light wavelength setting means 4 23 constituting the laser light modulation means 42 can adopt a form well known to those skilled in the art, and therefore, these are omitted in this specification. A detailed description of the composition. The laser light oscillated by the laser light oscillating means 41 reaches the condenser 43 via the laser light modulating means 42. The repeating frequency setting means 42 in the laser light modulation means 42 is to form the laser light into a pulsed laser light of a specified repeating frequency, and the laser light pulse width setting means 4 22 is to set the pulse width of the pulsed laser light to Specify the width, and then the laser light wavelength setting means 4 2 3 is to set the wavelength of the pulsed laser light to the specified chirp. Returning to FIG. 1 for explanation, the laser processing apparatus of the illustrated embodiment is provided with a first detection means 5 a and a second detection means 5 that can detect a surface of a workpiece held by the chuck table 3. b. The first detection means 5a and the second detection means 5b are formed by optical means such as a microscope or a CCD camera 200520880 (6), and can transmit a detection signal to a control means. The first detection means 5a is for a CCD camera. Detecting the shape, position, and size of the workpiece held by the chuck table 3 in the χ_Υ matrix composed of pixels. The second detection means 5b is a condenser 4 from the laser light irradiation means 4 described above. The area where the laser light should be irradiated is detected. The control means 6 includes a memory area that recognizes the position and size of the shape of the workpiece detected by the first detection means 5a, and memorizes the shape; and "means detected by the second detection means 5b." A memory area that recognizes and memorizes the area irradiated by the laser light. This control device 6 'controls the operation of the above-mentioned chuck table 3's moving means (not shown) or laser light irradiation means 4 and various mechanisms described below. The laser processing apparatus according to the embodiment shown in the figure includes display means 7 for displaying images detected by the first detection means 5a and the second detection means 5b. The laser processing apparatus of the embodiment shown in the figure includes a cassette mounting portion S for storing a workpiece and a cassette mounting. The cassette mounting portion 8 is provided with a cassette table 81 that can be moved up and down by a lifting mechanism (not shown). The cassette 9 is mounted on the cassette table 81. The processed objects contained in the cassette 9 will be described in detail later. The laser processing apparatus of the illustrated embodiment is provided with a temporary portion 12 capable of temporarily placing a workpiece to be stored in the cassette 9, and the temporary portion] 2 is provided with a position where the workpiece can be adjusted. Position adjustment means 1 3. In addition, the laser processing device according to the embodiment shown in the figure includes a cleaning method for cleaning processed products according to the needs of the ° 14 °. In addition, the laser processing device according to the embodiment shown includes: The processed object stored in the cassette 9 can be moved out to the temporary position 9-20200520880 (7) The position g 2 of the placement section 1 2 | The processing means 1 3 can be simultaneously processed Processed objects are moved into and out of the box 9 5; The processed object before being processed out of the position adjustment means 1 3 can be transferred to the above-mentioned chuck table 3 丨 6; and, according to the demand, the laser will be shot on the chuck table 3 The processed product after the processing is conveyed to the washing conveying means 17 of the washing means 14. The laser processing apparatus of the embodiment shown in the figure is configured as described above. Next, its operation will be described mainly with reference to FIG. 1. When Lu performs laser processing on an object to be processed by the laser processing device, Lu stores the object to be processed in the box 9 and then places the box 9 containing the object in the box. Stage 8 1 on. Here, the workpieces accommodated in the cassette 9 will be described with reference to FIG. 3. The workpiece shown in FIG. 3 (a) is formed by three optical element wafers 10, such as a gallium nitride-based compound semiconductor, laminated on the surface of a sapphire substrate. This optical element wafer 10 is formed in a circular shape with a small diameter, and an orientation plane 101 indicating a crystal orientation is formed on the outer periphery. A predetermined division line 102 is formed on the surface of the optical element wafer. In the embodiment shown in the figure, the orientation plane] 01 is three detachably fixed to the protection disc 1] by a suitable adhesive (the workpiece fixing step). The protective plate 11 is formed in a circular shape from a rigid 1 to thick plate such as a metal such as stainless steel, ceramics, or synthetic resin. A reference portion 1] a corresponding to the above-mentioned orientation plane 1 0 a is formed on the outer periphery, and a position adjustment portion 1 1 b is formed at an angular position of 90 degrees from the reference portion 1 1 a. 1 1 b. On the surface of the protective disk 11 formed in this manner, an adhesive layer Π 1 made of a spring resin or a silicone resin is formed outside the outer peripheral portion. This adhesive layer] Π is, for example, a rubber sheet "< 6 乂 6 jun" (registered trademark) which can be used and sold by Yuba X. In this way, as shown in FIG. 3 (b), the three optical element wafers 10 are the surfaces of the adhesive layer 1 1 1 formed on the protective disk 11. At this time, the three optical element wafers 10 are arranged so that the direction of the orientation plane 101 is aligned with the reference portion 11a. Next, a protective disk affixed with the three optical element wafers 10 is housed in the cassette 9 described above. As described above, the optical element wafer 10 before the adhesion processing is stored in the protective disk Π in the cassette 9, and the cassette stage 81 is moved up and down to be positioned at the unloading position by a lifting mechanism (not shown). . Next, the processed object carrying-in and carrying-out means 15 will advance and retreat to carry out the position adjustment of the protective disk 11 attached to the optical element wafer 10 which is positioned at the carrying-out position to the position of the temporary part 12 Means 1 3. The protective disc 1] carried out to the position adjustment means 1 3 and attached to the optical element wafer 10] is adjusted by the position adjustment means】 3 to a specified position. Next, the protection disk Π of the optical element wafer 10 before the processing is adhered after the position is adjusted by the position adjustment means 13, and is transferred to the chuck table 3 by the rotating operation of the processing means 16 for the processed object. Then, it is sucked and held on the chuck table 3 (protective disk holding step). In this way, the chuck table 3 holding and holding the protection disk 11 to which the optical element wafer 10 is adhered is smoothly moved and positioned directly below the first detection means 5a by a moving means (not shown). When the chuck table 3 is positioned directly under the detection means 5 a of the brother 1, the protection disc held by the chuck table 3 is detected by the first detection means 5 a]] Table-11-200520880 〇) The three optical element wafers 10 pasted are photographed, the shape, position, and size of each optical element wafer 10 are detected, and then the detection signal is transmitted to the control means 6. The control means 6 recognizes the shape, position, and size of the workpiece detected by the first detection means 5a, and memorizes this in the billion-remembering means (addition shape recognition step). Next, the chuck table 3 is positioned directly below the second detection means 5b. When the chuck table 3 is positioned directly below the second detection means 5 b, the second detection means 5 b performs detection on the three optical element wafers 1 0 and the division line 1 0 2 respectively, and then Send the detection signal to the control means 6. The control means 6 performs image processing, such as pattern matching, used to adjust the position of the planned division line 10 2 and the position of the condenser 4 3 of the laser light irradiation means 4 for laser light irradiation based on the detection signal. Smooth alignment of laser light irradiation position. For the details of the shape recognition step and the alignment step of the processed object, please refer to Japanese Patent No. 3 1 7 3 0 52, which was approved by the applicant. In this way, the shape and position of the three optical element wafers 10 adhered to the surface of the protective disk 11 held by the chuck table 3 are identified, and the laser light irradiation positions are aligned. The chuck table 3 is moved to the laser light irradiation area where the condenser 4 3 of the laser light irradiation means 4 is located, and the laser light irradiation area 4 is moved from the condenser 4 3 of the laser light irradiation means 4 to the laser light irradiation area through the laser. The ray is irradiated along a predetermined division line 102 of each optical element wafer] (laser ray irradiation step). Here, a laser light irradiation procedure is demonstrated. In the step of irradiating the laser light, the laser light irradiating means 4-12-200520880 (ίο) concentrator 4 3 pulses the laser light from the surface side of the optical element wafer 10 toward the planned division line 1 02 At the same time as the irradiation, the chuck table 3 is fitted so that the optical device wafer 10 held on the chuck table 3 with the protective disk 11 interposed therebetween is directed at a specified transport speed (for example, 200 mm / sec). Move in the direction shown by the arrow symbol X. In the laser light irradiation step, the following ultraviolet laser and infrared laser can be used. (1) Ultraviolet laser β light source: YAG laser or YV04 laser wavelength: 3 5 5 nm Power: 3.0 W Repeat frequency: 20kHz Pulse width: 0.1 ns Condensing spot diameter: Φ 〇. 5 // m (2) Infrared excitation # · Light source: YAG laser or YV04 laser Wavelength: 1 〇4 4 nm Power: 5.1 W Repeat frequency: 100 kHz Pulse width: 20ns Condensing spot diameter: φ 1 / im In addition, when using an ultraviolet laser, It is on the surface of the optical element wafer] -13-200520880 (11) A laser processing groove is formed along the planned division line 102, and the division is performed by the impact force of a laser pulse. In addition, when an infrared laser is used, a deteriorated layer is formed inside the optical element wafer 10 along the planned division line 102, and division is performed by applying an external force along the deteriorated layer. In this way, by implementing the step of irradiating with laser light, the optical element wafer 10 can be divided along the predetermined division line 102. At this time, the element wafer 10 is adhered to the protection disk 11 and is held on the chuck table 3 with the protection disk 11 interposed therebetween, so that the laser light radiated on the optical element wafer 10 will not be damaged. To the chuck table 3 〇 All the predetermined division lines 10 formed in the specified directions of the three optical device wafers 10 are performed. After the laser light irradiation step described above is performed, the chuck table 3 is cooperated to be held on the chuck table 3. The optical element wafer 10 on the substrate is rotated 90 degrees, and the laser light irradiation step is performed along each of the predetermined division lines 10 extending at right angles to the specified direction, so that the optical element wafer 10 is divided into individual wafers. In this way, in the embodiment shown in the figure, the three optical element wafers 10 with a smaller diameter are adhered to the protective disk 11 to identify each optical element wafer 10 and execute the laser light irradiation position. After the alignment, the laser light irradiation step is performed, so that a plurality of optical element wafers 10 can be performed with a single laser light irradiation step, thereby improving productivity. In this way, after the optical element wafer 10 is divided into individual semiconductor wafers by the implementation of the laser light irradiation step, the protective disk is held] 1. The chuck table 3 to which the optical element wafer 10 is attached is initially Return the protective disk 11 to the original suction and holding position, and then release the protective disk]]. Next, a protective disk with optical element wafer 10 adhered]] was moved from cleaning -14 to 200520880 according to demand (12) Cleaning means 17 was transferred to cleaning means 14 and was then cleaned and dried. In this way, the cleaned and dried processed optical element wafer] 0 is attached to the protective disk 1 1, which is moved out by the processing means 16 to the distribution agency in the temporary storage unit] 2 and the position adjustment means 1 3 . The protective disc 11 to which the processed optical element wafer 10 is pasted is moved to the position adjustment means 3, and is stored in the designated position of the cassette 9 via the process object carrying-in and carrying-out means 15. [Brief Description of the Drawings] FIG. 1 is a perspective view of a laser processing apparatus for implementing the laser processing method of the present invention. Fig. 2 is a schematic block diagram showing a configuration of a laser light irradiation means to be equipped in the laser processing apparatus shown in Fig. 1; Fig. 3 is a perspective view showing an optical element wafer and an outline member to be processed by the laser processing method of the present invention. [Description of main component symbols] 2: Device housing of laser processing device 3: Chuck table 4: Laser light irradiation means 5 a: First detection means 5 b: Second detection means 6: Control means 7: Display means- 15-200520880 (13) 8: Cassette mounting section 8 1: Cassette table 9: Cassette box 1 〇: Optical element wafer 1 1: Protective disk 1 2: Temporary section 1 3: Position adjustment means 1 4: Washing means 15: Object to be moved out and in means 16: Object to be processed means 17: Washing and conveying means
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