JP6732213B2 - ガラス基板の製造方法 - Google Patents

ガラス基板の製造方法 Download PDF

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Publication number
JP6732213B2
JP6732213B2 JP2016223260A JP2016223260A JP6732213B2 JP 6732213 B2 JP6732213 B2 JP 6732213B2 JP 2016223260 A JP2016223260 A JP 2016223260A JP 2016223260 A JP2016223260 A JP 2016223260A JP 6732213 B2 JP6732213 B2 JP 6732213B2
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JP
Japan
Prior art keywords
glass substrate
processing
port
chamber
processing device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016223260A
Other languages
English (en)
Japanese (ja)
Other versions
JP2018080082A (ja
Inventor
好晴 山本
好晴 山本
弘樹 中塚
弘樹 中塚
大野　和宏
和宏 大野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Electric Glass Co Ltd
Original Assignee
Nippon Electric Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Glass Co Ltd filed Critical Nippon Electric Glass Co Ltd
Priority to JP2016223260A priority Critical patent/JP6732213B2/ja
Priority to CN201780064645.3A priority patent/CN109843822B/zh
Priority to KR1020197009972A priority patent/KR102423339B1/ko
Priority to PCT/JP2017/039063 priority patent/WO2018092560A1/ja
Priority to TW106138542A priority patent/TWI735697B/zh
Publication of JP2018080082A publication Critical patent/JP2018080082A/ja
Application granted granted Critical
Publication of JP6732213B2 publication Critical patent/JP6732213B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G49/00—Conveying systems characterised by their application for specified purposes not otherwise provided for
    • B65G49/05—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
    • B65G49/06—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for fragile sheets, e.g. glass
    • B65G49/063—Transporting devices for sheet glass
    • B65G49/064—Transporting devices for sheet glass in a horizontal position
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G2201/00—Indexing codes relating to handling devices, e.g. conveyors, characterised by the type of product or load being conveyed or handled
    • B65G2201/02—Articles
    • B65G2201/0214—Articles of special size, shape or weigh
    • B65G2201/022—Flat
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Surface Treatment Of Glass (AREA)
  • Cleaning In General (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2016223260A 2016-11-16 2016-11-16 ガラス基板の製造方法 Active JP6732213B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2016223260A JP6732213B2 (ja) 2016-11-16 2016-11-16 ガラス基板の製造方法
CN201780064645.3A CN109843822B (zh) 2016-11-16 2017-10-30 玻璃基板的制造方法
KR1020197009972A KR102423339B1 (ko) 2016-11-16 2017-10-30 유리 기판의 제조 방법
PCT/JP2017/039063 WO2018092560A1 (ja) 2016-11-16 2017-10-30 ガラス基板の製造方法
TW106138542A TWI735697B (zh) 2016-11-16 2017-11-08 玻璃基板之製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016223260A JP6732213B2 (ja) 2016-11-16 2016-11-16 ガラス基板の製造方法

Publications (2)

Publication Number Publication Date
JP2018080082A JP2018080082A (ja) 2018-05-24
JP6732213B2 true JP6732213B2 (ja) 2020-07-29

Family

ID=62145303

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016223260A Active JP6732213B2 (ja) 2016-11-16 2016-11-16 ガラス基板の製造方法

Country Status (5)

Country Link
JP (1) JP6732213B2 (zh)
KR (1) KR102423339B1 (zh)
CN (1) CN109843822B (zh)
TW (1) TWI735697B (zh)
WO (1) WO2018092560A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110429053B (zh) * 2019-08-19 2021-03-23 江阴江化微电子材料股份有限公司 一种具有活动盖板的湿蚀刻设备及湿蚀刻方法
JPWO2021117555A1 (zh) * 2019-12-10 2021-06-17

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4451952B2 (ja) * 1999-12-24 2010-04-14 キヤノンアネルバ株式会社 基板処理装置
WO2003066486A1 (fr) * 2002-02-04 2003-08-14 Sumitomo Precision Products Co., Ltd Dispositif de traitement de substrat de type transfert
JP4398262B2 (ja) * 2004-01-08 2010-01-13 大日本スクリーン製造株式会社 基板処理装置
JP4641168B2 (ja) * 2004-09-22 2011-03-02 芝浦メカトロニクス株式会社 基板の処理装置
WO2007077765A1 (ja) * 2005-12-28 2007-07-12 Sharp Kabushiki Kaisha ステージ装置及びプラズマ処理装置
JP2008159663A (ja) * 2006-12-21 2008-07-10 Tokyo Electron Ltd 基板処理装置
JP4681640B2 (ja) * 2008-09-30 2011-05-11 積水化学工業株式会社 表面処理方法
KR101353525B1 (ko) * 2010-02-09 2014-01-21 주식회사 엘지화학 유리판 제조 시스템용 레이-아웃 및 유리판 처리 방법 및 그에 따른 유리판
JP5103631B2 (ja) * 2010-03-24 2012-12-19 国立大学法人 熊本大学 加工方法
CN103140918A (zh) * 2011-03-03 2013-06-05 松下电器产业株式会社 半导体基板的表面蚀刻装置、以及使用该表面蚀刻装置制造在表面形成有凹凸形状的半导体基板的方法
JP6048817B2 (ja) * 2012-12-27 2016-12-21 日本電気硝子株式会社 板状ガラスの表面処理装置及び表面処理方法
JP6520928B2 (ja) * 2014-04-16 2019-05-29 Ａｇｃ株式会社 エッチング装置、エッチング方法、基板の製造方法、および基板

Also Published As

Publication number Publication date
WO2018092560A1 (ja) 2018-05-24
CN109843822A (zh) 2019-06-04
TW201830515A (zh) 2018-08-16
KR102423339B1 (ko) 2022-07-21
KR20190084031A (ko) 2019-07-15
TWI735697B (zh) 2021-08-11
JP2018080082A (ja) 2018-05-24
CN109843822B (zh) 2022-08-26

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