WO2018092560A1 - ガラス基板の製造方法 - Google Patents

ガラス基板の製造方法 Download PDF

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Publication number
WO2018092560A1
WO2018092560A1 PCT/JP2017/039063 JP2017039063W WO2018092560A1 WO 2018092560 A1 WO2018092560 A1 WO 2018092560A1 JP 2017039063 W JP2017039063 W JP 2017039063W WO 2018092560 A1 WO2018092560 A1 WO 2018092560A1
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WO
WIPO (PCT)
Prior art keywords
glass substrate
chamber
processor
port
processing
Prior art date
Application number
PCT/JP2017/039063
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English (en)
French (fr)
Japanese (ja)
Inventor
好晴 山本
弘樹 中塚
大野　和宏
Original Assignee
日本電気硝子株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本電気硝子株式会社 filed Critical 日本電気硝子株式会社
Priority to CN201780064645.3A priority Critical patent/CN109843822B/zh
Priority to KR1020197009972A priority patent/KR102423339B1/ko
Publication of WO2018092560A1 publication Critical patent/WO2018092560A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G49/00—Conveying systems characterised by their application for specified purposes not otherwise provided for
    • B65G49/05—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
    • B65G49/06—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for fragile sheets, e.g. glass
    • B65G49/063—Transporting devices for sheet glass
    • B65G49/064—Transporting devices for sheet glass in a horizontal position
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G2201/00—Indexing codes relating to handling devices, e.g. conveyors, characterised by the type of product or load being conveyed or handled
    • B65G2201/02—Articles
    • B65G2201/0214—Articles of special size, shape or weigh
    • B65G2201/022—Flat
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Definitions

  • the present invention relates to a method for manufacturing a glass substrate including a step of etching the lower surface of the glass substrate with a processing gas such as hydrogen fluoride while transporting the glass substrate in a flat position.
  • a processing gas such as hydrogen fluoride
  • glass substrates are used in a wide variety of electronic devices, including flat panel displays such as liquid crystal displays, plasma displays, organic EL displays, field emission displays, and mobile terminals such as smartphones and tablet PCs. Has been adopted.
  • problems caused by static electricity may occur.
  • the glass substrate when the glass substrate is placed on a support base so as to perform a predetermined process, the glass substrate may stick to the support base due to static electricity. In such a case, the glass substrate may be damaged when the processed glass substrate is lifted from the support base.
  • Patent Document 1 discloses an example of a technique for performing an etching process on the surface of a glass substrate.
  • the upper and lower surfaces of the glass substrate are transferred by a processing gas supplied by a processing device (surface processing apparatus in the same document) disposed on the transfer path while the glass substrate is transferred in a flat position.
  • a processing device surface processing apparatus in the same document
  • the processing unit when performing the etching process, it is usual to perform the process in a state where the processing unit is surrounded by a chamber in order to prevent the processing gas from leaking to the outside.
  • the chamber is formed with a carry-in port for carrying the glass substrate before the etching process into the chamber and a carry-out port for carrying the glass substrate after the etching process out of the chamber.
  • the processing gas reacts with the glass substrate to generate a minute product.
  • This product may adhere to the upper surface of the glass substrate as a foreign substance, for example, floating on an air current generated in the chamber.
  • a process such as pattern formation of a transparent conductive film is performed in the downstream process, but if the process is performed with foreign matter attached to the upper surface, It will be a cause of defects.
  • the above-described method is adopted, there is a problem that the quality of the glass substrate is deteriorated due to the adhesion of foreign matters to the upper surface.
  • the present invention made in view of the above circumstances is technical to prevent deterioration of the quality of the glass substrate when the lower surface of the glass substrate is etched with the processing gas while the glass substrate is transported in a flat position. Let it be an issue.
  • a processing device disposed on a conveyance path supplies air to a glass substrate carried into a chamber from a carry-in entrance along a conveyance path in a flat position.
  • a method of manufacturing a glass substrate in which a lower glass substrate is etched with a processing gas and then the processed glass substrate is carried out of the chamber from a carry-out port, and suction disposed above the conveyance path in the chamber It is characterized by exhausting from the mouth to the outside of the chamber.
  • the processing unit includes an upper structure and a lower structure that are opposed to each other with the conveyance path interposed therebetween, and supplies a processing gas to a processing space formed between the two structures.
  • a processor with an air supply port provided in the lower structure has an exhaust port connected to the outside of the chamber from below the transport path, and has the same external shape as the processor when viewed from the direction along the transport direction.
  • the first dummy processor is preferably disposed between the processor and the carry-out port on the transfer path.
  • the first dummy processor is arranged between the processor and the carry-out port on the transfer path, so that the airflow flowing into the chamber from the carry-out port due to the pressure difference between the inside and outside of the chamber is generated. Even if it occurs, this airflow can be prevented from reaching the processor. That is, the first dummy processor having the same external shape as the processor as viewed from the direction along the transport direction serves as a windbreak wall against the airflow. Therefore, the possibility that the processing gas in the processing space of the processing device is blown off by the pressure of the inflowing air flow and hinders execution of the etching processing can be accurately removed.
  • the first dummy processor since the first dummy processor has an exhaust port connected to the outside of the chamber from the lower side of the transfer path, the first dummy processor is dragged to the lower surface of the substrate along with the transfer of the glass substrate to the downstream side of the transfer direction (first dummy in the transfer direction).
  • the processing gas that has flowed out to the processor side) can be discharged out of the chamber through the exhaust port. Thereby, it is possible to prevent the processing gas flowing out from the processing space from leaking out of the chamber from the carry-out port.
  • the product easily moves toward the downstream side in the conveyance direction of the glass substrate after the generation. Therefore, if exhaust is performed outside the chamber on the downstream side of the transport direction as much as possible in the chamber, the product can be efficiently removed from the chamber. For this reason, exhausting from the suction port to the outside of the chamber on the downstream side of the first dummy processor in the conveyance direction of the glass substrate is more advantageous in removing products from the chamber.
  • a second dummy processor having an exhaust port connected to the outside of the chamber from below the transfer path and having the same outer shape as the processor when viewed from the direction along the transfer direction is provided on the transfer path. It is preferable to arrange between the processor and the carry-in port.
  • the second dummy processor By arranging the second dummy processor between the processor and the carry-in port, it is possible to avoid the airflow flowing from the carry-in port from reaching the processor. That is, it is possible to cause the second dummy processor to play a role of a windbreak against airflow. Thereby, the processing gas in the processing space is blown off by the pressure of the airflow, and the possibility that the execution of the etching process is hindered can be more accurately removed. Furthermore, since the second dummy processor has an exhaust port connected to the outside of the chamber from the lower side of the transfer path, it is possible to more effectively remove the above-mentioned concern.
  • the airflow that flows toward the processor along the lower surface of the glass substrate can be discharged out of the chamber through the exhaust port before reaching the processor. For this reason, it is possible to remove the above-mentioned fear more effectively.
  • the present invention it is possible to prevent deterioration of the quality of the glass substrate when the lower surface of the glass substrate is etched with the processing gas while the glass substrate is transported in a flat position.
  • the transport direction of the glass substrate (the direction from right to left in FIG. 1) is referred to as “transport direction”.
  • the width direction of the glass substrate perpendicular to the transport direction (in FIG. 1, the direction perpendicular to the paper surface) is expressed as “width direction”, and the length along the “width direction” is expressed as “full width” or “width”. It is written as “Dimension”.
  • a direction perpendicular to the upper and lower surfaces of the glass substrate is denoted as “vertical direction”.
  • a glass substrate manufacturing apparatus 1 includes a conveying means 3 for horizontally conveying a glass substrate 2 in a flat position, and a processing gas 4 (with respect to a lower surface 2a of the glass substrate 2 being conveyed.
  • a processing device 5 for performing an etching process with hydrogen fluoride
  • a purge gas injection nozzle 7 for injecting a purge gas 6 for preventing the etching process on the upper surface 2b of the glass substrate 2
  • a chamber 8 having an opening 8 aa and a carry-out port 8 ab for preventing the processing gas 4 from leaking out from a space 9 formed in the inside thereof, and a processor 5 on the transport path of the glass substrate 2.
  • the first dummy processor 10 disposed between the carry-out port 8ab, the second dummy processor 11 disposed between the processor 5 and the carry-in port 8aa, the process gas 4, and the gas And a suction nozzle 12 for discharging to the outside the chamber 8 as main components by sucking products generated by the reaction between the lower surface 2a of the scan board 2.
  • the transport means 3 is composed of a plurality of rollers 3 a arranged on the transport path of the glass substrate 2. With the plurality of rollers 3a, the glass substrate 2 can be transported along a transport path extending in a straight line. Between the rollers 3a adjacent to each other along the transport direction, the entire width of the lower surface 2a of the glass substrate 2 is exposed. The exposed lower surface 2a reacts with the processing gas 4, whereby an etching process is performed to roughen the entire width of the lower surface 2a.
  • a conveyance means 3 you may use things other than the some roller 3a, and if it can expose the full width of the lower surface 2a of the glass substrate 2 during conveyance, other things will be used. Also good.
  • the processor 5 prevents the main body part 5a as a lower structural body facing the transport path of the glass substrate 2 from above and below, the top plate part 5b as an upper structural body, and bending due to the weight of the top plate part 5b. H steel 5c as a reinforcing member for this purpose.
  • a processing space 13 for performing an etching process on the glass substrate 2 passing therethrough is formed between the main body 5a and the top plate 5b. This processing space 13 is formed as a flat space.
  • the width dimension W1 (refer to FIG. 2) of the processing space 13 and the thickness dimension T1 along the vertical direction are larger than the total width W2 (refer to FIG. 2) of the glass substrate 2 and the thickness T2 of the glass substrate 2, respectively. It is getting bigger.
  • the length L1 of the processing space 13 along the conveyance direction is preferably in the range of 300 mm to 2000 mm, and more preferably in the range of 600 mm to 1000 mm.
  • the length dimension L ⁇ b> 1 is preferably longer than the length along the conveyance direction of the glass substrate 2, unlike the aspect in the present embodiment.
  • the thickness T1 of the processing space 13 is preferably in the range of 4 mm to 30 mm. Further, the ratio of the length dimension L1 to the thickness dimension T1 (length dimension L1 / thickness dimension T1) is preferably in the range of 10 to 250.
  • the main body 5a has a rectangular parallelepiped outer shape.
  • the main body 5a includes an air supply port 14 for injecting and supplying the processing gas 4 to the processing space 13, an exhaust port 15 for sucking and exhausting the processing gas 4 from the processing space 13, and a processing space. 13 is provided with heating means (not shown) such as a heater for heating the processing gas 4 supplied to 13 and preventing condensation due to the processing gas 4.
  • the exhaust port 15 is disposed at each of an upstream end and a downstream end of the main body 5a in the transport direction.
  • a plurality (three in the present embodiment) of the air supply ports 14 are arranged along the transport direction between the exhaust port 15 at the upstream end and the exhaust port 15 at the downstream end. Yes.
  • the most downstream air supply port 14 in the transport direction has the highest flow rate of the processing gas 4 supplied to the processing space 13.
  • other air supply ports The processing gas 4 having a flow rate twice that of the port 14 is supplied.
  • the concentration of the process gas 4 to be supplied is the same between the plurality of supply ports 14.
  • Each air supply port 14 is connected to the processing space 13 between the rollers 3a adjacent to each other along the transport direction. Further, the flow rate of the processing gas 4 supplied from each air supply port 14 is constant per unit time.
  • the distance L2 from the most upstream side air supply port 14 to the central air supply port 14 and the distance from the central air supply port 14 to the most downstream side air supply port 14 It is equal to L3.
  • three air inlets 14 are arranged, but the present invention is not limited to this, and two may be arranged, or four or more may be arranged.
  • Each of the exhaust port 15 at the upstream end and the exhaust port 15 at the downstream end can send the processing gas 4 sucked from the processing space 13 into the space 16 formed inside the main body 5a.
  • the space 16 is connected to an exhaust pipe 17 connected to a cleaning dust collector (not shown) disposed outside the chamber 8.
  • a cleaning dust collector not shown
  • the exhaust pipe 17 is connected to the downstream end of the space 16 in the transport direction.
  • the exhaust port 15 at the upstream end and the exhaust port 15 at the downstream end have a gas to be exhausted ("gas" is not only the process gas 4 but also drawn into the process space 13 from the outside, A mechanism for individually adjusting the flow rate of air (including air sucked into the exhaust port 15) may be provided.
  • the exhaust port 15 is omitted by closing the opening connected to the processing space 13 of the exhaust port 15, removing the portion constituting the exhaust port 15 from the main body 5 a, and closing the hole communicating with the space 16. It is also possible to do.
  • the flow rate of the gas exhausted from the processing space 13 by each exhaust port 15 is larger than the flow rate of the processing gas 4 supplied from the respective supply ports 14 to the processing space 13.
  • the flow rate of the gas exhausted from each exhaust port 15 is constant per unit time.
  • the downstream end exhaust port 15 and the most downstream side exhaust distance 15 between the upstream end exhaust port 15 and the most upstream air supply port 14 are compared with each other.
  • the distance D2 between the air supply port 14 is longer.
  • the length of the mutual distance D2 is preferably 1.2 times or more of the length of the mutual distance D1, more preferably 1.5 times or more, and most preferably 2 times or more.
  • both the air supply port 14 and the exhaust port 15 are formed in a slit shape that is long in the width direction.
  • the width dimension of the air supply port 14 may be slightly shorter than the entire width of the glass substrate 2 or, unlike the figure, slightly longer than the entire width of the glass substrate 2. It may be.
  • the width dimension of the exhaust port 15 is slightly longer than the entire width of the glass substrate 2.
  • the opening length S1 along the transport direction of the air supply port 14 is preferably within a range of 0.5 mm to 5 mm. .
  • the opening length along the conveyance direction of the exhaust port 15 is longer than the opening length S1 along the conveyance direction of the air supply port 14. Furthermore, in order to avoid that the suction of gas through the exhaust port 15 hinders the execution of the smooth etching process, a distance L4 from the upstream end edge 5aa of the main body 5a to the exhaust port 15 at the upstream end, The distance L4 from the downstream edge 5ab to the exhaust port 15 at the downstream end is preferably in the range of 1 mm to 20 mm in common.
  • a top portion of the main body portion 5 a that faces the lower surface 2 a of the glass substrate 2 that is passing through the processing space 13 is a plurality of units (in this embodiment, arranged in a gap along the transport direction). And includes an air supply unit 18 and a connection unit 19 described later).
  • the plurality of units constitute the top of the main body 5a and the ceiling of the space 16 described above.
  • the plurality of units include an air supply unit 18 in which the air supply port 14 is formed and a connection unit 19 in which the air supply port 14 is not formed (in FIG. 2, the connection to the air supply unit 18 is made).
  • Each unit 19 is surrounded by a thick line).
  • the air supply units 18 are arranged at the second, fourth, and sixth positions from the upstream side in the transport direction.
  • the connection units 19 are arranged at the first, third, fifth, seventh, and eighth positions from the upstream side in the transport direction.
  • the air supply unit 18 includes an air supply nozzle 18 a connected to the air supply port 14, and the air supply nozzle 18 a is connected to a generator (not shown) of the processing gas 4 disposed outside the chamber 8. Yes.
  • the connection unit 19 connects between the adjacent air supply units 18 and between the air supply unit 18 and the exhaust port 15.
  • connection unit 19 (19x) existing at the first position (the position on the most upstream side) from the upstream side in the transport direction is fixedly disposed at the position.
  • connection unit 19 located at the third, fifth, seventh, and eighth positions from the upstream side is described later in which an exhaust port 20a is formed instead of the air supply unit 18 or the air supply port 14.
  • the exhaust unit 20 in FIG. 1, the exhaust unit 20 is not used
  • the air supply unit 18 located at the second, fourth, and sixth positions from the upstream side can be replaced with the connection unit 19 or the exhaust unit 20 described later.
  • the process gas 4 can be exhausted from other than the exhaust ports 15 and 15 at the upstream end and the downstream end.
  • replacement of these units will be described with reference to FIGS. 3a to 3d.
  • the air supply unit 18, the connection unit 19, and the exhaust unit 20, which are surrounded by a thick line, have the same length along the transport direction.
  • the newly placed unit is connected to both adjacent units (in FIG. 3a to FIG. 3c, both adjacent units are connected to each other).
  • the unit 19 can be arranged with no gap.
  • the newly arranged units can be arranged with no step in the vertical direction with both adjacent units.
  • the peripheral region 14a of the air supply port 14 in the air supply unit 18 is positioned higher in the vertical direction than the other regions.
  • the distance from the lower surface 2a of the glass substrate 2 that is passing through the processing space 13 is shorter than in other regions.
  • the separation distance from the lower surface 2a of the glass substrate 2 in the peripheral region 14a of the air supply port 14 is half of the separation distance from the lower surface 2a of the glass substrate 2 in other regions. ing.
  • the tip of the air supply port 14 (outflow port of the processing gas 4) is close to the lower surface 2 a of the glass substrate 2 because the separation distance is shortened. Further, as shown in FIG.
  • the exhaust port 20 a formed in the exhaust unit 20 is connected to the space 16.
  • the processing gas 4 sent from the processing space 13 to the space 16 through the exhaust port 20a is then exhausted from the space 16 to the cleaning dust collector through the exhaust pipe 17.
  • the exhaust port 20a is formed in a slit shape that is long in the width direction, like the exhaust port 15 at the upstream end and the exhaust port 15 at the downstream end.
  • the peripheral region 14a of the air supply port 14 in the air supply unit 18 may have the same height as other regions.
  • the top plate portion 5 b is a single plate (rectangular plate in plan view), and has a flat surface facing the upper surface 2 b of the glass substrate 2 passing through the processing space 13.
  • the top plate part 5b incorporates heating means (not shown) such as a heater for preventing condensation due to the processing gas 4.
  • the H steel 5c is installed so as to extend in the width direction on the top plate portion 5b. Further, a plurality of H steels 5c (three in this embodiment) are installed, and the plurality of H steels 5c are arranged at equal intervals in the transport direction.
  • the purge gas injection nozzle 7 is arranged on the upstream side of the processing unit 5 in the transport direction and above the transport path of the glass substrate 2.
  • the purge gas injection nozzle 7 is configured such that a flow of the purge gas 6 along the transport direction is formed in a gap 13a formed between a portion of the glass substrate 2 that has entered the processing space 13 and the top plate portion 5b.
  • the purge gas 6 can be injected toward the downstream side in the transport direction.
  • the flow of the purge gas 6 can be formed over the entire width of the gap 13a.
  • the purge gas 6 is injected so that the flow velocity along the transport direction is faster than the transport speed of the glass substrate 2 by the transport means 3.
  • the processing gas 4 that is about to flow into the gap 13a is driven to the downstream side in the transport direction by the pressure of the purge gas 6, and can be prevented from flowing into the gap 13a. And the roughening of the upper surface 2b of the glass substrate 2 is avoided.
  • clean dry air (CDA) is used as the purge gas 6.
  • the purge gas 6 starts to be injected immediately before the leading portion 2 f of the glass substrate 2 being transferred enters the processing space 13. Furthermore, as shown in FIG. 4 b, the purge gas 6 is stopped from being injected immediately before the last part 2 e of the glass substrate 2 being transferred enters the processing space 13.
  • the timing for starting and stopping the injection of the purge gas 6 is determined as follows. First, detection means (not shown) such as a sensor that can detect the passage of the leading portion 2f and the trailing portion 2e of the glass substrate 2 is arranged upstream of the purge gas injection nozzle 7 in the transport direction.
  • the purge gas 6 is injected based on the conveying speed of the glass substrate 2 and the distance along the conveying path from the leading portion 2f to the processing space 13.
  • the timing to start is determined.
  • the detection means detects the passage of the last part 2e
  • the timing for stopping the injection is determined based on the transport speed and the distance from the last part 2e to the processing space 13.
  • the purge gas injection nozzle 7 includes a cylindrical pipe 7a extending in the width direction.
  • a plurality of tubes 7b are inserted into the pipe 7a at intervals in the width direction.
  • the purge gas 6 can be supplied from each tube 7b into the pipe 7a.
  • a long plate body 7c in the width direction is attached to the inside of the pipe 7a. After the purge gas 6 flowing into the pipe 7a from each tube 7b wraps around the plate body 7c, Injected from the injection part 7d connected with the pipe 7a.
  • the purge gas 6 injection port formed in the injection unit 7d is formed in a slit shape elongated in the width direction.
  • the injection angle ⁇ of the purge gas 6 by the injection unit 7d (the angle at which the injection unit 7d is directed with respect to the upper surface 2b of the glass substrate 2) can be changed within a range of 25 ° to 70 °. ing. Further, the posture of the purge gas injection nozzle 7 can be adjusted so that the injection portion 7d is directed in the processing space 13 as indicated by a solid line in FIG. 5, and as indicated by a two-dot chain line in the same figure. In addition, it is possible to adjust the injection unit 7d so that the outside of the processing space 13 is directed.
  • the chamber 8 has a rectangular parallelepiped outer shape.
  • the chamber 8 includes a main body 8a in which a ceiling hole 8ac is formed, and a lid body 8b for closing the ceiling hole 8ac in addition to the carry-in port 8aa and the carry-out port 8ab.
  • the carry-in port 8aa and the carry-out port 8ab are formed in the side wall 8ad of the main body 8a and are formed as flat openings that are elongated along the width direction.
  • a plurality of ceiling holes 8ac (three in the present embodiment) are formed in the ceiling portion 8ae of the main body 8a.
  • the lid 8b can block the entire opening of the ceiling hole 8ac, and can be attached to the main body 8a and removed from the main body 8a. Thereby, by removing the lid 8b from the main body 8a and opening the ceiling hole 8ac, it is possible to perform operations such as adjustment, maintenance, and inspection of the processor 5 through the ceiling hole 8ac.
  • the first dummy processor 10 includes a rectangular parallelepiped box 10a disposed below the transport path of the glass substrate 2, a top plate 10b disposed above the transport path so as to face the box 10a, H steel 10c as a reinforcing member for preventing bending due to its own weight of the plate 10b is provided. A gap 21 for passing the glass substrate 2 is formed between the box 10a and the top plate 10b.
  • the first dummy processor 10 functions as a windproof member for avoiding that the airflow flowing into the chamber 8 from the carry-out port 8ab reaches the processing space 13 and adversely affects the etching process.
  • the length of the first dummy processor 10 along the transport direction is preferably 50 mm or more, and more preferably 100 mm or more.
  • a rectangular opening 10aa elongated in the width direction is formed at the upper end of the box 10a.
  • an exhaust pipe 22 connected to a cleaning dust collector (not shown) arranged outside the chamber 8 is connected to the bottom of the box 10a.
  • the first dummy processor 10 draws the processing gas 4 from the processing space 13 to the downstream side in the transport direction by being dragged to the lower surface 2a of the glass substrate 2 through the opening 10aa. It is possible to exhaust to the cleaning dust collector after suction.
  • the top plate 10 b is a single plate (a rectangular plate in plan view) and has a flat surface facing the upper surface 2 b of the glass substrate 2 that is passing through the gap 21.
  • the H steel 10c is installed so as to extend in the width direction on the top plate 10b.
  • the first dummy processor 10 has the same outer shape as the processor 5 when viewed from the direction along the transport direction, and is arranged so as to be seen overlapping the processor 5. In other words, the width dimension and the dimension along the vertical direction are the same between the main body 5a of the processor 5 and the box 10a of the first dummy processor 10. Similarly, (A) the top plate portion 5b of the processor 5 and the top plate 10b of the first dummy processor 10, (B) the H steel 5c of the processor 5 and the H steel 10c of the first dummy processor 10, ( C) The gap 21 between the processing space 13 of the processor 5 and the first dummy processor 10, and the width dimension and the dimension along the vertical direction are the same among the combinations of these (A) to (C). Has been.
  • the second dummy processor 11 has the same configuration as the first dummy processor 10 except for the following two points (1) and (2). For this reason, the same code
  • the arrangement differs from the first dummy processor 10. (2) It functions as a windproof member for avoiding that the airflow that has flowed into the chamber 8 from the carry-in port 8aa instead of the carry-out port 8ab reaches the processing space 13 and adversely affects the etching process.
  • the second dummy processor 11 has the same external shape as the processor 5 when viewed from the direction along the transport direction in the same manner as the first dummy processor 10, and overlaps the processor 5 when viewed. It is arranged so that
  • the suction nozzle 12 is attached to the ceiling 8 ae of the chamber 8, and the suction port 12 a is connected to the space 9.
  • the suction port 12a is disposed downstream of the first dummy processor 10 in the transport direction, and is disposed at the downstream end of the space 9 in the transport direction.
  • the suction nozzle 12 is connected to a cleaning dust collecting device (not shown) disposed outside the chamber 8, and the sucked product can be discharged to the cleaning dust collecting device.
  • the suction port 12a is not limited to the same arrangement as in the present embodiment, and may be arranged above the conveyance path of the glass substrate 2.
  • the suction port 12 a is arranged in the transport direction from the processor 5 even when the suction port 12 a is arranged differently from the present embodiment. Also, it is preferable to arrange them on the downstream side.
  • the glass substrate 2 is carried by the carrying means 3, thereby carrying the glass substrate 2 into the chamber 8 from the carry-in port 8aa.
  • the glass substrate 2 having a longer overall length along the transport path than the distance is set as a target for the etching process with reference to the distance along the transport path from the carry-in port 8aa to the carry-out port 8ab.
  • the glass substrate 2 is transported at a constant transport speed.
  • the gap 21 of the second dummy processor 11 disposed between the inlet 8aa and the processor 5 is passed through the glass substrate 2 after the introduction.
  • the gas that flows into the chamber 8 from the carry-in port 8aa and flows downstream along the lower surface 2a of the glass substrate 2 in the carrying direction is an exhaust gas that continues to the bottom of the box 10a of the second dummy processor 11. Aspirate with tube 22.
  • the second dummy processor 11 to function as a windproof member, the gas flowing into the chamber 8 from the carry-in port 8aa is prevented from reaching the processing space 13 of the processor 5.
  • the processing space 13 of the processor 5 is passed through the glass substrate 2 after passing through the gap 21 of the second dummy processor 11.
  • the injection of the purge gas 6 is started immediately before the leading portion 2 f of the glass substrate 2 enters the processing space 13.
  • the processing gas 4 is exhausted from the processing space 13 through each exhaust port 15.
  • the etching process on the upper surface 2 b by the processing gas 4 is prevented by the flow of the purge gas 6 formed in the gap 13 a.
  • the product generated by the etching process is sucked by the suction nozzle 12 and discharged out of the chamber 8.
  • the purge gas 6 stops spraying immediately before the last part 2e of the glass substrate 2 enters the processing space 13.
  • the injection of the purge gas 6 is stopped immediately before the last portion 2e of the glass substrate 2 enters the processing space 13, but the present invention is not limited to this. As long as the top portion 2 f of the glass substrate 2 has escaped from the processing space 13, the injection of the purge gas 6 may be stopped before the last portion 2 e of the glass substrate 2 enters the processing space 13. I do not care.
  • the gap 21 of the first dummy processor 10 disposed between the processor 5 and the carry-out port 8ab is passed through the glass substrate 2 after the etching process that has passed through the processing space 13 of the processor 5.
  • the gas flowing into the chamber 8 from the carry-out port 8ab and flowing upstream along the lower surface 2a of the glass substrate 2 in the conveyance direction is exhaust gas connected to the bottom of the box 10a of the first dummy processor 10. Aspirate with tube 22.
  • the exhaust pipe 22 draws the processing gas 4 dragged to the lower surface 2 a of the glass substrate 2 and flows out of the processing space 13 to the downstream side in the transport direction, and exhausts it outside the chamber 8.
  • the glass substrate 2 after passing through the gap 21 of the first dummy processor 10 is carried out of the chamber 8 from the carry-out port 8ab. And the glass substrate 2 by which the etching process was performed to the lower surface 2a is obtained.
  • the glass substrate manufacturing method according to the embodiment of the present invention is thus completed.
  • the product generated by the etching process is discharged out of the chamber 8 from the suction port 12a disposed above the conveyance path of the glass substrate 2 in the chamber 8. For this reason, it is possible to remove from the chamber 8 products that may adhere to the upper surface 2b of the glass substrate 2 as foreign substances. As a result, adhesion of foreign matter on the upper surface 2b of the glass substrate 2 can be avoided, and deterioration of the quality of the glass substrate 2 can be prevented.
  • the manufacturing method of the glass substrate which concerns on this invention is not limited to the aspect demonstrated by said embodiment.
  • the configuration of the processor may be different from the processor used in the above embodiment.
  • the processor used in the above embodiment has a configuration in which a plurality of air supply ports are disposed between the exhaust port at the upstream end and the exhaust port at the downstream end, but this is not a limitation.
  • the configuration may be such that only one air supply port is disposed between the two exhaust ports (for example, disposed at an intermediate position between the two exhaust ports).

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Surface Treatment Of Glass (AREA)
  • Cleaning In General (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
PCT/JP2017/039063 2016-11-16 2017-10-30 ガラス基板の製造方法 WO2018092560A1 (ja)

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CN201780064645.3A CN109843822B (zh) 2016-11-16 2017-10-30 玻璃基板的制造方法
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CN109843822B (zh) 2022-08-26
KR102423339B1 (ko) 2022-07-21
TW201830515A (zh) 2018-08-16
TWI735697B (zh) 2021-08-11
CN109843822A (zh) 2019-06-04
JP2018080082A (ja) 2018-05-24
JP6732213B2 (ja) 2020-07-29

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