JP6730237B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6730237B2 JP6730237B2 JP2017178753A JP2017178753A JP6730237B2 JP 6730237 B2 JP6730237 B2 JP 6730237B2 JP 2017178753 A JP2017178753 A JP 2017178753A JP 2017178753 A JP2017178753 A JP 2017178753A JP 6730237 B2 JP6730237 B2 JP 6730237B2
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- 239000004065 semiconductor Substances 0.000 title claims description 239
- 239000012535 impurity Substances 0.000 description 20
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 7
- 229910010271 silicon carbide Inorganic materials 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Description
なお、図面は模式的または概念的なものであり、各部分の厚みと幅との関係、部分間の大きさの比率などは、必ずしも現実のものと同一とは限らない。また、同じ部分を表す場合であっても、図面により互いの寸法や比率が異なって表される場合もある。
なお、本願明細書と各図において、既出の図に関して前述したものと同様の要素には同一の符号を付して詳細な説明は適宜省略する。
図1及び図2は、半導体装置1を示す平面図及び断面図である。
本明細書においては、XYZ直交座標系を採用する。カソード電極81からアノード電極80に向かう方向をZ方向とし、Z方向に対して垂直な方向であって相互に直交する2方向をX方向及びY方向とする。図1及び図2は、半導体装置1のX−Y平面及びX−Z断面をそれぞれ示している。なお、図示の便宜上、図1において、図2に示された要素の一部を省略している。図1は、Z方向から見たときに、半導体領域20、31、50、51と、導電層60と、絶縁層70との位置を示している。
素子領域R1において、半導体装置1は、第1導電形の半導体領域10と、第1導電形の半導体領域20と、第2導電形の半導体領域30と、第2導電形の半導体領域31と、第2導電形の半導体領域40と、第1導電形の半導体領域50と、導電層60と、アノード電極80と、カソード電極81と、を有する。
なお、図示の便宜上、複数の半導体領域30がX方向及びY方向に沿って配置されているが、図2において、素子領域R1内には1つの半導体領域30が示されている。
図2に示すように、半導体領域31は、半導体領域30の周囲に位置している。つまり、図1では、Z方向から見て、半導体領域31は半導体領域30に重ならない。
素子領域R1では、半導体装置1の半導体領域10、20、30、40、50が、PINダイオードD1を構成する。
カソード電極81は、半導体領域10の第2面10b上に設けられている。例えば、カソード電極81は、金属材料、アノード電極80と同じ金属材料を含む。
つまり、素子領域R1では、半導体装置1において、PINダイオードD1とJBSダイオードD2とが併設されている。
終端領域R2において、半導体装置1は、半導体領域10、20、30、40と、第2導電形の半導体領域35と、第1導電形の半導体領域51と、導電層60と、絶縁層70と、アノード電極80と、カソード電極81と、を有する。
半導体領域30は、半導体領域20上に設けられている。半導体領域30は、素子領域R1を囲むように位置し、例えば、Z方向から見て環状を有する。
半導体領域40は、半導体領域30上に設けられている。半導体領域40は、素子領域R1を囲むように位置し、例えば、Z方向から見て環状を有する。
終端領域R2では、半導体装置1の半導体領域20、30、40、51が、PINダイオードD1aを構成する。
絶縁層70は、半導体領域20、30、35上に設けられている。絶縁層70は、素子領域R1を囲むように位置し、例えば、Z方向から見て環状を有する。絶縁層70は、例えば、シリコン酸化物(SiO)を含む。なお、図2に示すように、導電層60と絶縁層70との間には隙間が設けられている。
アノード電極80は、半導体領域30、導電層60及び絶縁層70上に設けられている。アノード電極80は、半導体領域30より内側に位置し、例えば、Z方向から見て半導体領域30に含まれる。また、アノード電極80は、半導体領域51より外側に位置し、例えば、Z方向から見て半導体領域51を含んでいる。
カソード電極81は、半導体領域10の第2面10b上に設けられている。
本実施形態の半導体装置1において、素子領域R1のPINダイオードD1には半導体領域50が設けられ、終端領域R2のPINダイオードD1には半導体領域51が設けられている。また、半導体領域50のX方向の幅W1は、半導体領域51のX方向の幅W2より小さい。
本実施形態によれば、より耐量が向上した半導体装置を提供することができる。
図3及び図4は、半導体装置2を示す平面図及び断面図である。図3及び図4に示された領域は、図1及び図2に示された領域にそれぞれ相当する。なお、図示の便宜上、図3において、図4に示された要素の一部を省略している。つまり、図3は、Z方向から見たときに、素子領域R1及び終端領域R2における半導体領域20、31、50、51と、導電層60と、絶縁層70との位置を示している。
なお、本実施形態では、半導体領域51の構成において第1実施形態と異なる。よって、これ以外の構成の詳細な説明は省略する。
なお、図3においては、図4に示された導電層60の内、半導体領域51の領域51A及び51Bの間に位置する部分が示されている。また、図4に示すように、導電層60と絶縁層70との間には隙間が設けられている。
本実施形態の効果は、第1実施形態の効果と同じである。
Claims (4)
- 第1電極と、
第2電極と、
前記第1電極と前記第2電極との間に設けられた第1導電形の第1半導体領域と、
前記第1半導体領域の第1領域と、前記第2電極との間に設けられ、前記第2電極に電気的に接続する第2導電形の第2半導体領域と、
前記第1半導体領域の第1領域と、前記第2電極との間に設けられ、前記第1電極から前記第2電極に向かう第1方向に交差する第2方向で前記第2半導体領域と並んで配置され、前記第1方向及び前記第2方向に垂直な第3方向に延伸し、前記第2電極に電気的に接続する第2導電形の第3半導体領域と、
前記第1半導体領域の第1領域と、前記第2半導体領域との間に設けられ、前記第2方向に第1の幅を有する第1導電形の第4半導体領域と、
前記第1半導体領域の前記第1領域を前記第1方向と交差する平面内で囲む前記第1半導体領域の第2領域と、前記第2電極との間に設けられ、前記第2電極に電気的に接続する第2導電形の第5半導体領域と、
前記第1半導体領域の前記第2領域と、前記第5半導体領域との間に設けられ、前記第2方向に前記第1の幅より大きい第2の幅を有する第1導電形の第6半導体領域と、
を備えた半導体装置。 - 前記第4半導体領域の形状は、前記第1方向から見て環状である請求項1記載の半導体装置。
- 前記第4半導体領域は、前記第2半導体領域上に位置し、前記第2半導体領域から前記第1方向に反対の第4方向に突出するように設けられている請求項1または2記載の半導体装置。
- 前記第6半導体領域は、それぞれの形状が前記第1方向から見て環状である第3領域及び第4領域を有し、
前記第4領域は、前記第1半導体領域を介して前記第3領域を囲み、
前記第2の幅は、前記第3領域及び前記第4領域の前記第2方向の幅の和である請求項1から3のいずれか1つに記載の半導体装置。
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