JP6719252B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP6719252B2 JP6719252B2 JP2016067036A JP2016067036A JP6719252B2 JP 6719252 B2 JP6719252 B2 JP 6719252B2 JP 2016067036 A JP2016067036 A JP 2016067036A JP 2016067036 A JP2016067036 A JP 2016067036A JP 6719252 B2 JP6719252 B2 JP 6719252B2
- Authority
- JP
- Japan
- Prior art keywords
- conductor
- insulating
- insulating member
- conductor layer
- base member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 76
- 239000004020 conductor Substances 0.000 claims description 116
- 230000002093 peripheral effect Effects 0.000 claims description 30
- 239000002184 metal Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 238000009413 insulation Methods 0.000 description 16
- 238000007789 sealing Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 9
- 229920005989 resin Polymers 0.000 description 9
- 239000011347 resin Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000008646 thermal stress Effects 0.000 description 4
- 239000011800 void material Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000962 AlSiC Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000002082 metal nanoparticle Substances 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
- H01L23/4922—Bases or plates or solder therefor having a heterogeneous or anisotropic structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/642—Capacitive arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L2224/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Inverter Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
以下、本発明の半導体装置をパワー半導体モジュールに適用した例で説明する。
図1(A)は、パワー半導体モジュール300の外観を示す斜視図である。図1(B)は、パワー半導体モジュール300の組立て工程を示す分解斜視図である。
パワー半導体素子である上アーム回路を構成するIGBT328とダイオード156は、図2(A)に示すように、上アーム導体板315、318で挟まれる様に金属接合材331によって接合される。同様に、パワー半導体素子である下アーム回路を構成するIGBT330とダイオード166は下アーム導体板319、320で挟まれる様に金属接合材331によって接合される。上アーム回路と下アーム回路は、中間接続部329で金属接合材331によって接合され、上下アーム直列回路を形成している。
図6(A)(B)(C)は、第2の実施形態を示す図である。図6(A)は、パワー半導体モジュール300の断面図、図6(B)は、図6(A)のF部の拡大断面図、図6(C)は、図6(A)をD方向から見た底部平面図である。
図7(A)(B)(C)(D)は、第3の実施形態を示す図である。図7(A)は、パワー半導体モジュール300の分解断面図、図7(B)は、パワー半導体モジュール300の断面図、図7(C)は、図7(B)のG部の拡大断面図、図7(D)は、図7(B)をD方向から見た底部平面図である。
図8(A)(B)(C)は、第4の実施形態を示す図である。図8(A)は、パワー半導体モジュール300の分解断面図、図8(B)は、パワー半導体モジュール300の断面図、図8(C)は、図8(B)をD方向から見た底部平面図である。
図9は、第5の実施形態を示すパワー半導体モジュール300の分解断面図である。
図9に示すように、絶縁部材333の導体層334に、図3(A)に示すスリット部339が設けられていない。更に、絶縁部材333の導体層334が間に絶縁層を挟んで2層に積層されている。その他の部分は第1の実施形態と同様の構成である。なお、ベース部材307の形状は、第1の実施形態で示した図3(B)の形状でもよく、第2の実施形態で示した図6(A)の形状でもよい。本実施形態によれば、導体層334が2層に積層されているため、更に絶縁性能が向上し、製造工程も簡略化できる。
図10は、第6の実施形態を示す分解断面図である。
図10に示すように、絶縁部材333の導体層334は、交流電位の導体板318、320に対向する部分に設け、導体板319、315に対向する部分には設けていない。ベース部材307は、絶縁部材333とベース部材307との接触部分において絶縁部材333側に突出する台状の突出部307aが形成されている。なお、ベース部材307の形状は、第2の実施形態で示した図6(A)の形状でもよい。交流電位の導体板318、320に対向する絶縁部材333とベース部材307との関係は次のとおりである。すなわち、導体層334の中心から絶縁部材333の周縁部までの長さは、導体層334の中心からベース部材307の突出部307aの周縁部までの長さより長く形成されている。その他の部分は第1の実施形態と同様の構成である。本実施形態によれば、導体層334は耐圧が必要な個所に設けられているため、絶縁性能が向上し、製造工程も簡略化できる。
図11(A)(B)は、第7の実施形態の構造を示すパワー半導体モジュール300であり、図11(A)は分解断面図、図11(B)は底部平面図である。
図11(A)に示すように、絶縁部材333が、導体板315、318、319、320にそれぞれ対向する様に分割して配置され、更に、絶縁部材333の導体層334は、交流電位の導体板318、320に対向する部分に設け、導体板319、315に対向する部分には設けていない。ベース部材307には、ベース部材307の中央部に凹部310が設けられている。ベース部材307は、絶縁部材333とベース部材307との接触部分において絶縁部材333側に突出する台状の突出部307aが形成されている。なお、ベース部材307の形状は、第2の実施形態で示した図6(A)の形状でもよい。交流電位の導体板318、320に対向する絶縁部材333とベース部材307との関係を図11(B)に示す。すなわち、導体層334の中心Pから絶縁部材333の周縁部までの長さL10は、導体層334の中心からベース部材307の突出部307aの周縁部までの長さL9より長く形成されている。本実施形態によれば、導体層334は耐圧が必要な個所に設けられているため、絶縁性能が向上し、製造工程も簡略化できる。
(1)パワー半導体モジュール300は、半導体素子(IGBT328、ダイオード156)と、半導体素子に接続される導体板315、318、319、320と、導体板315、318、319、320と対向し、パワー半導体モジュール300の外装を構成する金属製のベース部材307と、導体板315、318、319、320とベース部材307との間に配置される絶縁部材333と、を備え、絶縁部材333は、第1絶縁層335aと第2絶縁層335bとの間に導体層334を挟んで構成され、第1絶縁層335aと導体板315、318、319、320との間で静電容量回路を形成し、第2絶縁層335bとベース部材307との間で静電容量回路を形成し、ベース部材307は、絶縁部材333とベース部材307との接触部分において絶縁部材333側に突出する台状の突出部307aが形成され、導体層334の中心から導体層334を含む絶縁部材333の周縁部までの長さは、導体層334の中心からベース部材307の突出部307aの周縁部までの長さより長く形成される。これにより、絶縁性を確実に確保できるパワー半導体モジュール300を提供できる。
304 ケース
305 フィン
307 ベース部材
307a 突出部
315、318、319、320 導体板
333 絶縁部材
334 導体層
335a 第1絶縁層
335b 第2絶縁層
Claims (5)
- 半導体素子と、
前記半導体素子に接続される導体板と、
前記導体板と対向し、半導体装置の外装を構成する金属製のベース部材と、
前記導体板と前記ベース部材との間に配置される絶縁部材と、を備え、
前記絶縁部材は、第1絶縁層と第2絶縁層との間に導体層を挟んで構成され、前記第1絶縁層を挟んで前記導体層と前記導体板との間で静電容量回路を形成し、前記第2絶縁層を挟んで前記導体層と前記ベース部材との間で静電容量回路を形成し、
前記ベース部材は、前記絶縁部材と前記ベース部材との接触部分において前記絶縁部材側に突出する突出部が形成され、
前記導体層の中心から、前記絶縁部材のうち前記導体層を含む領域の周縁部までの長さは、前記導体層の中心から前記ベース部材の前記突出部の周縁部までの長さより長く形成され、
前記導体層の端面および前記絶縁部材の端面は、同一面上に形成される半導体装置。 - 請求項1に記載の半導体装置において、
前記導体板は複数の前記半導体素子に対応して複数設けられ、前記導体層は、複数の前記導体板と対向して複数設けられる半導体装置。 - 請求項1または請求項2に記載の半導体装置において、
前記ベース部材の前記突出部の周縁部に凹部を設け、前記導体層の中心から、前記絶縁部材のうち前記導体層を含む領域の周縁部までの長さは、前記導体層の中心から前記ベース部材の前記凹部までの長さより長く形成される半導体装置。 - 請求項2に記載の半導体装置において、
前記絶縁部材は、複数の前記導体板と同数に分割され、分割された複数の前記絶縁部材は複数の前記導体板と夫々対向して配置され、
前記分割された複数の絶縁部材の隣接する間隙位置に対向して前記ベース部材に凹部が形成される半導体装置。 - 請求項2に記載の半導体装置において、
前記絶縁部材は、複数の前記導体板と同数に分割され、分割された複数の前記絶縁部材は複数の前記導体板のうち、交流電位となる前記導体板に対向して配置され、
前記導体層の中心を起点として、前記交流電位となる前記導体板に対向して配置された前記絶縁部材のうち前記導体層を含む領域の周縁部までの長さが、前記ベース部材の前記突出部の周縁部までの長さより長く形成される半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016067036A JP6719252B2 (ja) | 2016-03-30 | 2016-03-30 | 半導体装置 |
US16/089,079 US11201143B2 (en) | 2016-03-30 | 2017-01-23 | Semiconductor device with a protruding base member |
PCT/JP2017/002044 WO2017168992A1 (ja) | 2016-03-30 | 2017-01-23 | 半導体装置 |
CN201780020105.5A CN109005669B (zh) | 2016-03-30 | 2017-01-23 | 半导体装置 |
DE112017001071.3T DE112017001071T5 (de) | 2016-03-30 | 2017-01-23 | Halbleitervorrichtung |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016067036A JP6719252B2 (ja) | 2016-03-30 | 2016-03-30 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017183440A JP2017183440A (ja) | 2017-10-05 |
JP6719252B2 true JP6719252B2 (ja) | 2020-07-08 |
Family
ID=59964121
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016067036A Active JP6719252B2 (ja) | 2016-03-30 | 2016-03-30 | 半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11201143B2 (ja) |
JP (1) | JP6719252B2 (ja) |
CN (1) | CN109005669B (ja) |
DE (1) | DE112017001071T5 (ja) |
WO (1) | WO2017168992A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7107199B2 (ja) * | 2018-12-07 | 2022-07-27 | 株式会社デンソー | 半導体装置 |
JP7240221B2 (ja) * | 2019-03-28 | 2023-03-15 | 日立Astemo株式会社 | パワー半導体装置 |
JP7156155B2 (ja) * | 2019-04-19 | 2022-10-19 | 三菱電機株式会社 | 半導体モジュール |
JP7356402B2 (ja) * | 2020-05-18 | 2023-10-04 | 日立Astemo株式会社 | パワーモジュール |
WO2023112224A1 (ja) * | 2021-12-15 | 2023-06-22 | 日立Astemo株式会社 | 半導体装置および絶縁部材 |
CN116130443A (zh) * | 2023-02-16 | 2023-05-16 | 华中科技大学 | 一种用于高温环境的碳化硅功率模块双面散热封装结构 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1006880A (en) | 1910-05-23 | 1911-10-24 | George Roseman | Agricultural machine. |
JP5492447B2 (ja) * | 2009-04-28 | 2014-05-14 | 日立オートモティブシステムズ株式会社 | パワーモジュール |
WO2012120594A1 (ja) * | 2011-03-04 | 2012-09-13 | 日立オートモティブシステムズ株式会社 | 半導体モジュール、および半導体モジュールの製造方法 |
JP5825843B2 (ja) | 2011-05-19 | 2015-12-02 | 株式会社日立製作所 | 半導体ユニット及び電力変換装置 |
JP5520889B2 (ja) | 2011-06-24 | 2014-06-11 | 日立オートモティブシステムズ株式会社 | パワー半導体モジュール及びそれを用いた電力変換装置 |
JP5957862B2 (ja) * | 2011-12-05 | 2016-07-27 | 三菱マテリアル株式会社 | パワーモジュール用基板 |
JP2013229534A (ja) | 2012-04-27 | 2013-11-07 | Mitsubishi Electric Corp | 半導体装置 |
JP2013229535A (ja) | 2012-04-27 | 2013-11-07 | Mitsubishi Electric Corp | 半導体装置 |
KR101420536B1 (ko) * | 2012-12-14 | 2014-07-17 | 삼성전기주식회사 | 전력 모듈 패키지 |
JP6425380B2 (ja) | 2013-12-26 | 2018-11-21 | ローム株式会社 | パワー回路およびパワーモジュール |
JP6200871B2 (ja) | 2014-09-09 | 2017-09-20 | 日立オートモティブシステムズ株式会社 | パワーモジュール及び電力変換装置 |
-
2016
- 2016-03-30 JP JP2016067036A patent/JP6719252B2/ja active Active
-
2017
- 2017-01-23 DE DE112017001071.3T patent/DE112017001071T5/de active Pending
- 2017-01-23 US US16/089,079 patent/US11201143B2/en active Active
- 2017-01-23 CN CN201780020105.5A patent/CN109005669B/zh active Active
- 2017-01-23 WO PCT/JP2017/002044 patent/WO2017168992A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
CN109005669B (zh) | 2022-05-10 |
JP2017183440A (ja) | 2017-10-05 |
US20200303360A1 (en) | 2020-09-24 |
DE112017001071T5 (de) | 2018-11-29 |
WO2017168992A1 (ja) | 2017-10-05 |
US11201143B2 (en) | 2021-12-14 |
CN109005669A (zh) | 2018-12-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6719252B2 (ja) | 半導体装置 | |
JP6233507B2 (ja) | パワー半導体モジュールおよび複合モジュール | |
JP6725004B2 (ja) | 半導体装置、インバータユニット及び自動車 | |
JP6801605B2 (ja) | 電力変換装置 | |
US9973104B2 (en) | Power module | |
JP6988345B2 (ja) | 半導体装置 | |
WO2015072105A1 (ja) | パワーモジュール | |
IT201800004209A1 (it) | Dispositivo semiconduttore di potenza con relativo incapsulamento e corrispondente procedimento di fabbricazione | |
JP2019037047A5 (ja) | ||
JP6451257B2 (ja) | 半導体装置 | |
JP6149932B2 (ja) | 半導体装置 | |
JP7006812B2 (ja) | 半導体装置 | |
CN104392985A (zh) | 包括衬底的多芯片器件 | |
JP2021141275A (ja) | 電気回路体、電力変換装置、および電気回路体の製造方法 | |
JP2015162609A (ja) | 半導体装置 | |
CN110600457A (zh) | 半导体装置 | |
JP2022092545A (ja) | 電気回路体、電力変換装置、および電気回路体の製造方法 | |
US10021802B2 (en) | Electronic module assembly having low loop inductance | |
CN110323142B (zh) | 功率模块及其制造方法 | |
CN111354710A (zh) | 半导体装置及其制造方法 | |
WO2021229859A1 (ja) | 半導体装置、バスバー及び電力変換装置 | |
JP7290420B2 (ja) | パワー半導体装置 | |
CN110164858B (zh) | 半导体器件 | |
KR102016019B1 (ko) | 고열전도성 반도체 패키지 | |
JP6584333B2 (ja) | パワーモジュール |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160401 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20170120 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20170126 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180220 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180221 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190319 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190515 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20191105 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200203 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200205 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20200226 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200519 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200616 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6719252 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |