JP6711975B2 - 窒化物半導体自立基板作製方法 - Google Patents
窒化物半導体自立基板作製方法 Download PDFInfo
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- JP6711975B2 JP6711975B2 JP2016105969A JP2016105969A JP6711975B2 JP 6711975 B2 JP6711975 B2 JP 6711975B2 JP 2016105969 A JP2016105969 A JP 2016105969A JP 2016105969 A JP2016105969 A JP 2016105969A JP 6711975 B2 JP6711975 B2 JP 6711975B2
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- 239000000758 substrate Substances 0.000 title claims description 80
- 239000004065 semiconductor Substances 0.000 title claims description 42
- 150000004767 nitrides Chemical class 0.000 title claims description 35
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000013078 crystal Substances 0.000 claims description 51
- 238000000034 method Methods 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 13
- 238000000926 separation method Methods 0.000 claims description 12
- 238000002360 preparation method Methods 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052582 BN Inorganic materials 0.000 claims description 6
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 6
- 229910000640 Fe alloy Inorganic materials 0.000 claims description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 238000005121 nitriding Methods 0.000 claims description 4
- 229910000807 Ga alloy Inorganic materials 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 229910000676 Si alloy Inorganic materials 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 239000010408 film Substances 0.000 description 20
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 19
- 239000002994 raw material Substances 0.000 description 10
- 229910021529 ammonia Inorganic materials 0.000 description 8
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 125000004433 nitrogen atom Chemical group N* 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- BGECDVWSWDRFSP-UHFFFAOYSA-N borazine Chemical compound B1NBNBN1 BGECDVWSWDRFSP-UHFFFAOYSA-N 0.000 description 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000002070 germicidal effect Effects 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- -1 graphite and mica Chemical compound 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- LALRXNPLTWZJIJ-UHFFFAOYSA-N triethylborane Chemical compound CCB(CC)CC LALRXNPLTWZJIJ-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Description
Claims (3)
- 成長基板の上に六方晶系の窒化ホウ素からなる分離層を形成する第1工程と、
前記分離層の上にAlNからなるAlN層を+c軸方向に結晶成長する第2工程と、
前記AlN層の主表面を酸化して変質させて変質層とする第3工程と、
前記変質層の主表面を窒化して主表面をN極性とした成長準備層とする第4工程と、
主表面をN極性とした前記成長準備層の上に、GaN、AlN、InGaN、およびInNのいずれかの窒化物半導体を窒素極性で結晶成長して前記窒化物半導体の結晶からなるブールを作製する第5工程と、
前記成長基板を前記分離層で分離することで前記ブールより前記成長基板を取り除く第6工程と、
前記ブールを分割して複数の窒化物半導体自立基板を作製する第7工程と
を備えることを特徴とする窒化物半導体自立基板作製方法。 - 請求項1記載の窒化物半導体自立基板作製方法において、
前記成長基板は、単結晶ニッケルから構成されて主表面が(111)面とされている
ことを特徴とする窒化物半導体自立基板作製方法。 - 請求項1記載の窒化物半導体自立基板作製方法において、
前記成長基板は、単結晶鉄、鉄とシリコンの合金の単結晶、および鉄とガリウムの合金の単結晶の何れかから構成されて主表面が(111)面とされている
ことを特徴とする窒化物半導体自立基板作製方法。
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JP6711975B2 true JP6711975B2 (ja) | 2020-06-17 |
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Families Citing this family (2)
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WO2021014834A1 (ja) * | 2019-07-25 | 2021-01-28 | 信越化学工業株式会社 | Iii族化合物基板の製造方法及びその製造方法により製造した基板 |
JP7204625B2 (ja) * | 2019-07-25 | 2023-01-16 | 信越化学工業株式会社 | Iii族化合物基板の製造方法及びその製造方法により製造した基板 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH11310498A (ja) * | 1998-04-28 | 1999-11-09 | Kyocera Corp | 成膜用基板 |
JP2007066975A (ja) * | 2005-08-29 | 2007-03-15 | Nippon Telegr & Teleph Corp <Ntt> | 半導体発光素子 |
JP5099763B2 (ja) * | 2007-12-18 | 2012-12-19 | 国立大学法人東北大学 | 基板製造方法およびiii族窒化物半導体結晶 |
JP2012188294A (ja) * | 2011-03-08 | 2012-10-04 | Tohoku Univ | 半導体装置の製造方法 |
JP5587848B2 (ja) * | 2011-10-11 | 2014-09-10 | 日本電信電話株式会社 | 半導体積層構造の製造方法 |
US9312129B2 (en) * | 2012-09-05 | 2016-04-12 | Saint-Gobain Cristaux Et Detecteurs | Group III-V substrate material with particular crystallographic features and methods of making |
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