JP6707393B2 - 裏面入射型受光素子及び光受信モジュール - Google Patents
裏面入射型受光素子及び光受信モジュール Download PDFInfo
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- JP6707393B2 JP6707393B2 JP2016087023A JP2016087023A JP6707393B2 JP 6707393 B2 JP6707393 B2 JP 6707393B2 JP 2016087023 A JP2016087023 A JP 2016087023A JP 2016087023 A JP2016087023 A JP 2016087023A JP 6707393 B2 JP6707393 B2 JP 6707393B2
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- 230000003287 optical effect Effects 0.000 title claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 68
- 230000002093 peripheral effect Effects 0.000 claims description 33
- 238000002161 passivation Methods 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 13
- 238000013461 design Methods 0.000 claims description 9
- 230000035945 sensitivity Effects 0.000 description 67
- 230000031700 light absorption Effects 0.000 description 32
- 230000007423 decrease Effects 0.000 description 14
- 238000012986 modification Methods 0.000 description 13
- 230000004048 modification Effects 0.000 description 13
- 230000012447 hatching Effects 0.000 description 8
- 239000013307 optical fiber Substances 0.000 description 6
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/32—Optical coupling means having lens focusing means positioned between opposed fibre ends
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4295—Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14607—Geometry of the photosensitive area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
- G02B6/422—Active alignment, i.e. moving the elements in response to the detected degree of coupling or position of the elements
- G02B6/4225—Active alignment, i.e. moving the elements in response to the detected degree of coupling or position of the elements by a direct measurement of the degree of coupling, e.g. the amount of light power coupled to the fibre or the opto-electronic element
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Light Receiving Elements (AREA)
Description
以下に、図面に基づき、本発明の実施形態を具体的かつ詳細に説明する。なお、実施形態を説明するための全図において、同一の機能を有する部材には同一の符号を付し、その繰り返しの説明は省略する。なお、以下に示す図は、あくまで、実施形態の実施例を説明するものであって、図の大きさと本実施例記載の縮尺は必ずしも一致するものではない。
図5は、本発明の第2の実施形態に係る裏面入射型受光素子10の受光感度とビームスポット半径の関係を示すグラフである。同図のグラフの縦軸は受光感度(単位:A/W)を表し、横軸はビームスポット半径(単位:μm)を表す。グラフの左下には、本実施形態に係る裏面入射型受光素子10の半導体層の上面36aの形状を白抜きで示し、第1中心部36cの形状をハッチングで示し、第1周辺部36dの形状をハッチングで示している。本実施形態に係る裏面入射型受光素子10のコンタクト部は、入射光の光軸上に位置する第1中心部36cと、第1中心部36cと離間して第1中心部36cを囲む第1周辺部36dと、を含む。第1中心部36c及び第1周辺部36d以外の上面36aには、パッシベーション膜37が形成され、コンタクト部である第1中心部36c及び第1周辺部36dにはp型電極38が形成されている。p型電極38の光の反射率は、パッシベーション膜37の光の反射率よりも低く、第1中心部36c及び第1周辺部36d以外の上面36aは高反射領域であり、コンタクト部である第1中心部36c及び第1周辺部36dは低反射領域である。
Claims (5)
- 第1の面から光が入射する半導体基板と、
前記第1の面と対向する第2の面に積層され、前記光を吸収する光吸収層を含む半導体層と、
前記半導体層の上面の一部であるコンタクト部を露出させるように前記半導体層上に形成されたパッシベーション膜と、
前記コンタクト部において前記半導体層と接触し、前記光の反射率が前記パッシベーション膜よりも低い電極と、を備え、
前記コンタクト部は、前記光の光軸上に位置する中心部を少なくとも含み、
前記中心部の面積は、前記光の設計上のビームスポットの断面積よりも小さく、
前記コンタクト部は、前記中心部と離間して前記中心部を囲む周辺部を含む、
裏面入射型受光素子。 - 請求項1に記載の裏面入射型受光素子であって、
前記半導体層の上面の面積は、前記光の設計上のビームスポットの断面積よりも大きい、
裏面入射型受光素子。 - 請求項1に記載の裏面入射型受光素子であって、
前記中心部の面積は、前記半導体層の上面の面積の36%以下である、
裏面入射型受光素子。 - 請求項1に記載の裏面入射型受光素子であって、
前記中心部の面積は、前記半導体層の上面の面積の1%以上である、
裏面入射型受光素子。 - 請求項1乃至4に記載の裏面入射型受光素子と、
前記裏面入射型受光素子の前記第1の面側に配置された集光レンズと、
前記裏面入射型受光素子及び前記集光レンズを内包するパッケージと、
を備えたことを特徴する光受信モジュール。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016087023A JP6707393B2 (ja) | 2016-04-25 | 2016-04-25 | 裏面入射型受光素子及び光受信モジュール |
US15/493,175 US10204955B2 (en) | 2016-04-25 | 2017-04-21 | Back illuminated photo detector and optical receiver module having a center portion of an exposed contact portion located on an optical axis of light |
Applications Claiming Priority (1)
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JP2016087023A JP6707393B2 (ja) | 2016-04-25 | 2016-04-25 | 裏面入射型受光素子及び光受信モジュール |
Publications (2)
Publication Number | Publication Date |
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JP2017199716A JP2017199716A (ja) | 2017-11-02 |
JP6707393B2 true JP6707393B2 (ja) | 2020-06-10 |
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JP2016087023A Active JP6707393B2 (ja) | 2016-04-25 | 2016-04-25 | 裏面入射型受光素子及び光受信モジュール |
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US (1) | US10204955B2 (ja) |
JP (1) | JP6707393B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6789514B2 (ja) * | 2016-08-05 | 2020-11-25 | サンテック株式会社 | 検出装置 |
JP7449042B2 (ja) | 2019-02-28 | 2024-03-13 | 日本ルメンタム株式会社 | 光電変換素子、光サブアセンブリ及び光電変換素子の製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05224101A (ja) | 1991-08-09 | 1993-09-03 | Nec Corp | 半導体受光装置 |
EP0552792A1 (en) | 1992-01-24 | 1993-07-28 | Nec Corporation | Photoreceiver having semi-conductor light receiving element and lens |
JPH10117012A (ja) * | 1996-10-11 | 1998-05-06 | Sumitomo Electric Ind Ltd | 半導体受光素子 |
JP4861388B2 (ja) * | 2001-02-26 | 2012-01-25 | 日本オプネクスト株式会社 | アバランシェホトダイオード |
JP5011607B2 (ja) * | 2001-04-16 | 2012-08-29 | 住友電気工業株式会社 | 受光素子 |
JP2003142723A (ja) * | 2001-11-06 | 2003-05-16 | Furukawa Electric Co Ltd:The | 受光素子、受光素子アレイ及び受光モジュール |
US6894322B2 (en) * | 2002-02-11 | 2005-05-17 | Jds Uniphase Corporation | Back illuminated photodiodes |
JP2004200202A (ja) | 2002-12-16 | 2004-07-15 | Fujitsu Ltd | 半導体受光素子 |
JP2013080728A (ja) * | 2010-01-07 | 2013-05-02 | Hitachi Ltd | アバランシェフォトダイオード及びそれを用いた受信機 |
JP5394966B2 (ja) * | 2010-03-29 | 2014-01-22 | 日本オクラロ株式会社 | 半導体受光素子及びその製造方法 |
-
2016
- 2016-04-25 JP JP2016087023A patent/JP6707393B2/ja active Active
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2017
- 2017-04-21 US US15/493,175 patent/US10204955B2/en active Active
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Publication number | Publication date |
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JP2017199716A (ja) | 2017-11-02 |
US20170309658A1 (en) | 2017-10-26 |
US10204955B2 (en) | 2019-02-12 |
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