JP6692812B2 - ディスプレイ用ガラス基板およびその製造方法 - Google Patents
ディスプレイ用ガラス基板およびその製造方法 Download PDFInfo
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- JP6692812B2 JP6692812B2 JP2017526371A JP2017526371A JP6692812B2 JP 6692812 B2 JP6692812 B2 JP 6692812B2 JP 2017526371 A JP2017526371 A JP 2017526371A JP 2017526371 A JP2017526371 A JP 2017526371A JP 6692812 B2 JP6692812 B2 JP 6692812B2
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- Prior art keywords
- glass
- glass substrate
- display
- devitrification
- temperature
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- 239000011521 glass Substances 0.000 title claims description 232
- 239000000758 substrate Substances 0.000 title claims description 124
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 238000004031 devitrification Methods 0.000 claims description 77
- 238000002844 melting Methods 0.000 claims description 63
- 230000008018 melting Effects 0.000 claims description 63
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 50
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 49
- 238000005530 etching Methods 0.000 claims description 30
- 239000006060 molten glass Substances 0.000 claims description 27
- 238000010438 heat treatment Methods 0.000 claims description 26
- 238000001816 cooling Methods 0.000 claims description 19
- 239000005357 flat glass Substances 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 15
- 229910018068 Li 2 O Inorganic materials 0.000 claims description 14
- 239000002994 raw material Substances 0.000 claims description 14
- 239000010409 thin film Substances 0.000 claims description 7
- 230000008602 contraction Effects 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 38
- 230000007423 decrease Effects 0.000 description 30
- 229910006404 SnO 2 Inorganic materials 0.000 description 20
- 238000000034 method Methods 0.000 description 20
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 12
- 239000006025 fining agent Substances 0.000 description 11
- 238000010583 slow cooling Methods 0.000 description 9
- 238000000465 moulding Methods 0.000 description 8
- 238000007500 overflow downdraw method Methods 0.000 description 7
- 238000000137 annealing Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000003280 down draw process Methods 0.000 description 5
- 230000007613 environmental effect Effects 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 229910010413 TiO 2 Inorganic materials 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000011819 refractory material Substances 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 3
- 238000006124 Pilkington process Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000011449 brick Substances 0.000 description 2
- 238000004040 coloring Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000005485 electric heating Methods 0.000 description 2
- 238000010828 elution Methods 0.000 description 2
- 239000000156 glass melt Substances 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 2
- 239000013585 weight reducing agent Substances 0.000 description 2
- 238000007088 Archimedes method Methods 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 229910017493 Nd 2 O 3 Inorganic materials 0.000 description 1
- -1 Pr 2 O 3 Inorganic materials 0.000 description 1
- 206010040925 Skin striae Diseases 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 239000008395 clarifying agent Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 238000007496 glass forming Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 150000003057 platinum Chemical class 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000007372 rollout process Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000007573 shrinkage measurement Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Classifications
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
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- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B17/00—Forming molten glass by flowing-out, pushing-out, extruding or drawing downwardly or laterally from forming slits or by overflowing over lips
- C03B17/06—Forming glass sheets
- C03B17/064—Forming glass sheets by the overflow downdraw fusion process; Isopipes therefor
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- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B25/00—Annealing glass products
- C03B25/04—Annealing glass products in a continuous way
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- C03B5/00—Melting in furnaces; Furnaces so far as specially adapted for glass manufacture
- C03B5/02—Melting in furnaces; Furnaces so far as specially adapted for glass manufacture in electric furnaces, e.g. by dielectric heating
- C03B5/027—Melting in furnaces; Furnaces so far as specially adapted for glass manufacture in electric furnaces, e.g. by dielectric heating by passing an electric current between electrodes immersed in the glass bath, i.e. by direct resistance heating
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- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
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- C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
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- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
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- C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
- C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
- C03C3/087—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
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- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
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- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
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- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
- C03C3/093—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium containing zinc or zirconium
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- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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- H01L29/772—Field effect transistors
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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Description
関連出願の相互参照
本出願は、2015年6月30日出願の日本特願2015−131780号の優先権を主張し、それらの全記載は、ここに特に開示として援用される。
特許文献2:日本特開2004-315354号公報
特許文献3:日本特開2011-126728号公報
特許文献4:日本特開2012-106919号公報
特許文献1〜4の全記載は、ここに特に開示として援用される。
[1]
SiO2、Al2O3を含有し、
質量%表示で、
B2O3が0%以上、3%未満であり、
BaOが5〜14%であり、
Sb2O3を実質的に含有せず、
失透温度が1235℃以下であり、かつ
歪点が720℃以上である、ガラスからなる、ディスプレイ用ガラス基板。
[2]
SiO2、Al2O3を含有し、
質量%表示で、
B2O3が0%以上、3%未満であり、
MgOが1.8%以上であり、
BaOが5〜14%であり、
Sb2O3を実質的に含有せず、
(SiO2+MgO+CaO)-(Al2O3+SrO+BaO)が42%未満であり、
失透温度が1260℃以下であり、かつ
歪点が720℃以上である、ガラスからなる、ディスプレイ用ガラス基板。
[3]
前記ガラス基板は500℃の温度で30分間保持し、その後、常温まで放冷した場合の下記式で示される熱収縮率が15ppm以下である、[1]〜[2]のいずれか1項に記載のガラス基板。
熱収縮率(ppm)={熱処理前後のガラスの収縮量/熱処理前のガラスの長さ}×106
[4]
前記ガラス基板は、エッチングレートが75μm/hより大きい、[1]〜[3]のいずれか1項に記載のガラス基板。
[5]
低温ポリシリコンまたは酸化物半導体を用いて形成された薄膜トランジスタがガラス基板表面に形成されたフラットパネルディスプレイ用ガラス基板である、[1]〜[4]のいずれかに記載のガラス基板。
[6]
所定の組成に調合したガラス原料を少なくとも直接通電加熱を用いて熔解する熔解工程と、
前記熔解工程にて熔解した熔融ガラスを平板状ガラスに成形する成形工程と、
前記平板状ガラスを徐冷する工程であって、前記平板状ガラスの熱収縮率を低減するように前記平板状ガラスの冷却条件を制御する徐冷工程と、を含む[1]〜[5]のいずれか1項に記載のガラス基板を製造するディスプレイ用ガラス基板の製造方法。
SiO2、Al2O3を含有し、
質量%表示で、
B2O3が0%以上、3%未満であり、
BaOが5〜14%であり、
Sb2O3を実質的に含有せず、
失透温度が1235℃以下であり、かつ
歪点が720℃以上である、ガラスからなる。
SiO2、Al2O3を含有し、
質量%表示で、
B2O3が0%以上、3%未満であり、
MgOが1.8%以上であり、
BaOが5〜14%であり、
Sb2O3を実質的に含有せず、
(SiO2+MgO+CaO)-(Al2O3+SrO+BaO)が42%未満であり、
失透温度が1260℃以下であり、かつ
歪点が720℃以上である、ガラスからなる。
熱収縮率(ppm)={熱処理前後のガラスの収縮量/熱処理前のガラスの長さ}×106
このとき、「熱処理前後のガラスの収縮量」とは、「熱処理前のガラスの長さ−熱処理後のガラスの長さ」である。
本実施形態は、LTPS−TFTまたはOS−TFTをガラス基板表面に形成したフラットパネルディスプレイを包含し、このフラットパネルディスプレイはガラス基板が上記本実施形態のガラス基板である。本実施形態のフラットパネルディスプレイは、例えば、液晶ディスプレイまたは有機ELディスプレイであることかできる。
本実施形態のディスプレイ用ガラス基板の製造方法は、所定の組成に調合したガラス原料を、例えば、少なくとも直接通電加熱を用いて、熔解する熔解工程と、前記熔解工程にて熔解した熔融ガラスを平板状ガラスに成形する成形工程と、前記平板状ガラスを徐冷する徐冷工程と、を有する。
特に、前記徐冷工程は、前記平板状ガラスの熱収縮率を低減するように前記平板状ガラスの冷却条件を制御する工程であることが好ましい。
熔解工程においては、所定の組成を有するように調合したガラス原料を、例えば、直接通電加熱及び/又は燃焼加熱を用いて熔解する。ガラス原料は、公知の材料から適宜選択できる。エネルギー効率の観点から、熔解工程では、ガラス原料を、少なくとも直接通電加熱を用いて熔解することが好ましい。また、熔解工程を行う熔解槽は、高ジルコニア系耐火物を含んで構成されることが好ましい。上記所定の組成は、例えば、ガラスの各成分に関して上述した含有量を満たす範囲で適宜調整できる。
成形工程では、熔解工程にて熔解した熔融ガラスを平板状ガラスに成形する。平板状ガラスへの成形方法は、例えば、ダウンドロー法、特にオーバーフローダウンドロー法が好適であり、平板状ガラスとしてガラスリボンが成形される。その他、フロート法、リドロー法、ロールアウト法などを適用できる。ダウンドロー法を採用することにより、フロート法など他の成形方法を用いた場合に比べ、得られたガラス基板の主表面が雰囲気以外とは非接触である自由表面で形成されるために、極めて高い平滑性を有しており、成形後のガラス基板表面の研磨工程が不要となるために、製造コストを低減することができ、さらに生産性も向上させることができる。さらに、ダウンドロー法を使用して成形したガラス基板の両主表面は均一な組成を有しているために、エッチング処理を行った際に、成型時の表裏に関係なく均一にエッチングを行うことができる。
徐冷時の条件を適宜調整することでガラス基板の熱収縮率をコントロールすることができる。特に、前記平板状ガラスの熱収縮率を低減するように前記平板状ガラスの冷却条件を制御することが好ましい。ガラス基板の熱収縮率は上述のように、15ppm以下であり、好ましくは13ppm以下、より好ましくは1〜13ppmである。このような数値の熱収縮率を持つガラス基板を製造するためには、例えば、ダウンドロー法を使用する場合は、平板状ガラスとしてのガラスリボンの冷却速度を、Tgから(Tg−100℃)の温度範囲内において、30〜300℃/分とするように徐冷を行うことが好ましい。冷却速度が速すぎると、熱収縮率を十分低減することができない。一方、冷却速度が遅すぎると、生産性が低下すると共に、ガラス製造装置(徐冷炉)が大型化してしまうという問題が生じる。冷却速度の好ましい範囲は、30〜300℃/分であり、50〜200℃/分がより好ましく、60〜120℃/分がさらに好ましい。冷却速度を30〜300℃/分とすることで、本実施形態のガラス基板をより確実に製造することができる。なお、徐冷工程の下流で平板状ガラスを切断した後に、別途オフラインで徐冷を行うことでも熱収縮率は低下させることができるが、この場合、徐冷工程を行う設備の他に、別途オフラインで徐冷を行う設備が必要となる。そのため、上述したように、オフライン徐冷を省略することができるように、徐冷工程において熱収縮率を低減できるように制御したほうが、生産性及びコストの観点からも好ましい。なお、本明細書では、ガラスリボンの冷却速度とは、ガラスリボンの幅方向中央部の冷却速度を示すものとする。
ビーム曲げ測定装置(東京工業株式会社製)を用いて測定を行い、ビーム曲げ法(ASTM C−598)に従い、計算により歪点を求めた。
ガラスを粉砕し、2380μmのふるいを通過し、1000μmのふるい上に留まったガラス粒を白金ボートに入れた。この白金ボートを、1050〜1380℃の温度勾配をもった電気炉内に5時間保持し、その後、炉から取り出して、ガラス内部に発生した失透を50倍の光学顕微鏡にて観察した。失透が観察された最高温度を、失透温度とした。
示差熱膨張計(Thermo Plus2 TMA8310)を用いて測定した。この時の昇温速度は5℃/分とした。測定結果を元に100〜300℃の温度範囲における平均熱膨張係数およびTgを求めた。
熱収縮率は、90mm〜200mm×15〜30mm×0.3〜1mmの大きさのガラスについて、ケガキ線法で求めた。熱収縮測定の熱処理としては、エアサーキュレーション炉(Nabertherm製N120/85HA)を用いて、500℃の温度で30分間保持し、室温まで放冷した。
熱収縮率(ppm)={熱処理でのガラスの収縮量/熱処理前のガラスのケガキ線間距離}×106
なお、ガラス原料を白金ルツボで熔解した後に鉄板上に流し出し、冷却固化して得たガラスの熱収縮を測定する場合は、0.5mmの厚さとなるように切断・研削・研磨を施し、電気炉を用いて、Tg+15℃の温度で30分間保持した後、降温速度150〜250℃/分の速度で炉外へ取り出したガラスを用いた。
ガラスの密度は、アルキメデス法によって測定した。
エッチングレート(μm/h)は、ガラス(12.5mmx20mmx0.7mm)を、HF濃度1mol/kg、HCl濃度5mol/kgとなるように調整した40℃のエッチング液(200mL)に1時間浸漬した場合の厚み減少量(μm)を測定し、単位時間(1時間)当たりのガラス基板の一方の表面の厚み減少量(μm)を算出することで求めた。
Claims (6)
- SiO2、Al2O3を含有し、
質量%表示で、
B2O3が0%以上、3%未満であり、
BaOが5〜14%であり、
SrO/CaOが0.35〜1.18であり、
Li 2 O、Na 2 OおよびK 2 Oの合量が0.2%以上であり、
Sb2O3を実質的に含有せず、
失透温度が1235℃以下であり、かつ
歪点が720℃以上である、ガラスからなる、ディスプレイ用ガラス基板。 - SiO2、Al2O3を含有し、
質量%表示で、
B2O3が0%以上、3%未満であり、
MgOが1.8%以上であり、
BaOが5〜14%であり、
SrO/CaOが0.35〜1.18であり、
Li 2 O、Na 2 OおよびK 2 Oの合量が0.2%以上であり、
Sb2O3を実質的に含有せず、
(SiO2+MgO+CaO)-(Al2O3+SrO+BaO)が42%未満であり、
失透温度が1260℃以下であり、かつ
歪点が720℃以上である、ガラスからなる、ディスプレイ用ガラス基板。 - 前記ガラス基板は500℃の温度で30分間保持し、その後、常温まで放冷した場合の下記式で示される熱収縮率が15ppm以下である、請求項1〜2のいずれか1項に記載のガラス基板。
熱収縮率(ppm)={熱処理前後のガラスの収縮量/熱処理前のガラスの長さ}×106 - 前記ガラス基板は、エッチングレートが75μm/hより大きい、請求項1〜3のいずれか1項に記載のガラス基板。
- 低温ポリシリコンまたは酸化物半導体を用いて形成された薄膜トランジスタがガラス基板表面に形成されたフラットパネルディスプレイ用ガラス基板である、請求項1〜4のいずれか1項に記載のガラス基板。
- 所定の組成に調合したガラス原料を少なくとも直接通電加熱を用いて熔解する熔解工程と、
前記熔解工程にて熔解した熔融ガラスを平板状ガラスに成形する成形工程と、
前記平板状ガラスを徐冷する工程であって、前記平板状ガラスの熱収縮率を低減するように前記平板状ガラスの冷却条件を制御する徐冷工程と、を含む請求項1〜5のいずれか1項に記載のガラス基板を製造するディスプレイ用ガラス基板の製造方法。
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SG11201809797PA (en) * | 2016-05-06 | 2018-12-28 | Corning Inc | Laser cutting and removal of contoured shapes from transparent substrates |
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JP7478340B2 (ja) * | 2018-10-17 | 2024-05-07 | 日本電気硝子株式会社 | 無アルカリガラス板 |
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WO2021261446A1 (ja) * | 2020-06-25 | 2021-12-30 | 日本電気硝子株式会社 | 低アルカリガラス板の製造方法及び低アルカリガラス板 |
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Family Cites Families (26)
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KR101221834B1 (ko) * | 2006-10-10 | 2013-01-15 | 니폰 덴키 가라스 가부시키가이샤 | 강화 유리 기판 |
JP5483821B2 (ja) * | 2007-02-27 | 2014-05-07 | AvanStrate株式会社 | 表示装置用ガラス基板および表示装置 |
JP5435394B2 (ja) * | 2007-06-08 | 2014-03-05 | 日本電気硝子株式会社 | 強化ガラス基板及びその製造方法 |
JP5467490B2 (ja) * | 2007-08-03 | 2014-04-09 | 日本電気硝子株式会社 | 強化ガラス基板の製造方法及び強化ガラス基板 |
KR101231520B1 (ko) * | 2007-10-25 | 2013-02-07 | 아사히 가라스 가부시키가이샤 | 기판용 유리 조성물 및 그 제조 방법 |
TWI414502B (zh) * | 2008-05-13 | 2013-11-11 | Corning Inc | 含稀土元素之玻璃材料及基板及含該基板之裝置 |
JP5333984B2 (ja) | 2008-06-27 | 2013-11-06 | 日本電気硝子株式会社 | 無アルカリガラス |
JP5622069B2 (ja) * | 2009-01-21 | 2014-11-12 | 日本電気硝子株式会社 | 強化ガラス、強化用ガラス及び強化ガラスの製造方法 |
JP5537144B2 (ja) | 2009-12-16 | 2014-07-02 | AvanStrate株式会社 | ガラス組成物とそれを用いたフラットパネルディスプレイ用ガラス基板 |
JP5874316B2 (ja) | 2010-10-27 | 2016-03-02 | 日本電気硝子株式会社 | 無アルカリガラス |
CN103201228B (zh) * | 2010-11-08 | 2015-11-25 | 日本电气硝子株式会社 | 无碱玻璃 |
JPWO2012108345A1 (ja) * | 2011-02-08 | 2014-07-03 | 旭硝子株式会社 | ガラス組成物およびガラス組成物を用いた太陽電池用ガラス基板、並びにディスプレイパネル用ガラス基板 |
JP5831838B2 (ja) * | 2011-03-08 | 2015-12-09 | 日本電気硝子株式会社 | 無アルカリガラス |
US9029280B2 (en) * | 2011-07-01 | 2015-05-12 | Avanstrate Inc. | Glass substrate for flat panel display and method for manufacturing same |
US9162919B2 (en) | 2012-02-28 | 2015-10-20 | Corning Incorporated | High strain point aluminosilicate glasses |
JP6214570B2 (ja) | 2012-02-29 | 2017-10-18 | コーニング インコーポレイテッド | イオン交換可能な低cteガラス組成物および該ガラス組成物を含むガラス物品 |
KR101629779B1 (ko) * | 2012-06-08 | 2016-06-13 | 니폰 덴키 가라스 가부시키가이샤 | 강화유리, 강화유리판 및 강화용 유리 |
JP6037117B2 (ja) * | 2012-12-14 | 2016-11-30 | 日本電気硝子株式会社 | ガラス及びガラス基板 |
JP5914453B2 (ja) * | 2012-12-28 | 2016-05-11 | AvanStrate株式会社 | ディスプレイ用ガラス基板およびその製造方法 |
JP2017007870A (ja) | 2013-11-13 | 2017-01-12 | 旭硝子株式会社 | 板ガラスの製造方法 |
US10351466B2 (en) * | 2015-06-02 | 2019-07-16 | Nippon Electric Glass Co., Ltd. | Glass |
WO2017002807A1 (ja) * | 2015-06-30 | 2017-01-05 | AvanStrate株式会社 | ディスプレイ用ガラス基板およびその製造方法 |
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CN109133615B (zh) | 2022-05-10 |
US11069716B2 (en) | 2021-07-20 |
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