JP6686990B2 - スピン軌道トルク型磁化反転素子及び磁気メモリ - Google Patents

スピン軌道トルク型磁化反転素子及び磁気メモリ Download PDF

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JP6686990B2
JP6686990B2 JP2017169733A JP2017169733A JP6686990B2 JP 6686990 B2 JP6686990 B2 JP 6686990B2 JP 2017169733 A JP2017169733 A JP 2017169733A JP 2017169733 A JP2017169733 A JP 2017169733A JP 6686990 B2 JP6686990 B2 JP 6686990B2
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spin
orbit torque
ferromagnetic metal
wiring
layer
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JP2019047001A (ja
JP2019047001A5 (enExample
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慶太 須田
慶太 須田
智生 佐々木
智生 佐々木
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TDK Corp
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TDK Corp
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Priority to US16/629,895 priority patent/US11264563B2/en
Priority to PCT/JP2018/032404 priority patent/WO2019045055A1/ja
Priority to CN201880052140.XA priority patent/CN111052398B/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/40—Devices controlled by magnetic fields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
JP2017169733A 2017-09-04 2017-09-04 スピン軌道トルク型磁化反転素子及び磁気メモリ Active JP6686990B2 (ja)

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Application Number Priority Date Filing Date Title
JP2017169733A JP6686990B2 (ja) 2017-09-04 2017-09-04 スピン軌道トルク型磁化反転素子及び磁気メモリ
US16/629,895 US11264563B2 (en) 2017-09-04 2018-08-31 Spin-orbit-torque magnetization rotational element and magnetic memory
PCT/JP2018/032404 WO2019045055A1 (ja) 2017-09-04 2018-08-31 スピン軌道トルク型磁化反転素子及び磁気メモリ
CN201880052140.XA CN111052398B (zh) 2017-09-04 2018-08-31 自旋轨道转矩型磁化反转元件和磁存储器
US17/578,625 US11832526B2 (en) 2017-09-04 2022-01-19 Spin-orbit-torque magnetization rotational element and magnetic memory

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JP2017169733A JP6686990B2 (ja) 2017-09-04 2017-09-04 スピン軌道トルク型磁化反転素子及び磁気メモリ

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JP2019047001A5 JP2019047001A5 (enExample) 2020-01-16
JP6686990B2 true JP6686990B2 (ja) 2020-04-22

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US (2) US11264563B2 (enExample)
JP (1) JP6686990B2 (enExample)
CN (1) CN111052398B (enExample)
WO (1) WO2019045055A1 (enExample)

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WO2019230341A1 (ja) * 2018-05-31 2019-12-05 Tdk株式会社 スピン軌道トルク型磁化回転素子、スピン軌道トルク型磁気抵抗効果素子及び磁気メモリ
US11895928B2 (en) * 2019-10-03 2024-02-06 Headway Technologies, Inc. Integration scheme for three terminal spin-orbit-torque (SOT) switching devices
CN111490156A (zh) * 2020-04-21 2020-08-04 浙江驰拓科技有限公司 自旋轨道力矩磁存储器件及其制备方法
JP2022073039A (ja) * 2020-10-30 2022-05-17 Tdk株式会社 スピン素子、磁気アレイ及びスピン素子の製造方法
WO2022102122A1 (ja) * 2020-11-16 2022-05-19 Tdk株式会社 磁化回転素子、磁気抵抗効果素子及び磁気メモリ
US20240194235A1 (en) * 2021-04-12 2024-06-13 The University Of Tokyo Magnetic memory element
US12361995B2 (en) 2022-09-30 2025-07-15 International Business Machines Corporation Spin-orbit-torque (SOT) MRAM with doubled layer of SOT metal

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JP4065787B2 (ja) * 2002-08-30 2008-03-26 株式会社日立グローバルストレージテクノロジーズ 磁気ヘッドおよび磁気記録再生装置
JP5382295B2 (ja) 2008-06-27 2014-01-08 日本電気株式会社 磁気ランダムアクセスメモリ
FR2963153B1 (fr) 2010-07-26 2013-04-26 Centre Nat Rech Scient Element magnetique inscriptible
JP5695453B2 (ja) 2011-03-07 2015-04-08 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
JP2013016587A (ja) * 2011-07-01 2013-01-24 Toshiba Corp 磁気抵抗効果素子及びその製造方法
US9105832B2 (en) 2011-08-18 2015-08-11 Cornell University Spin hall effect magnetic apparatus, method and applications
JP2013187250A (ja) * 2012-03-06 2013-09-19 Toshiba Corp 半導体磁気記憶装置およびその製造方法
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JP5985728B1 (ja) * 2015-09-15 2016-09-06 株式会社東芝 磁気メモリ
JP6089081B1 (ja) * 2015-09-16 2017-03-01 株式会社東芝 磁気メモリ
WO2017090739A1 (ja) * 2015-11-27 2017-06-01 Tdk株式会社 スピン流磁化反転素子、磁気抵抗効果素子および磁気メモリ
KR102515035B1 (ko) * 2015-12-30 2023-03-30 에스케이하이닉스 주식회사 전자 장치 및 그 제조 방법
US10490735B2 (en) 2016-03-14 2019-11-26 Tdk Corporation Magnetic memory
US10686127B2 (en) * 2016-03-28 2020-06-16 National University Of Singapore Antiferromagnet and heavy metal multilayer magnetic systems for switching magnetization using spin-orbit torque
US10396276B2 (en) * 2016-10-27 2019-08-27 Tdk Corporation Electric-current-generated magnetic field assist type spin-current-induced magnetization reversal element, magnetoresistance effect element, magnetic memory and high-frequency filter
JP6733496B2 (ja) * 2016-10-27 2020-07-29 Tdk株式会社 スピン軌道トルク型磁化反転素子及び磁気メモリ
JP2019047120A (ja) * 2017-09-01 2019-03-22 Tdk株式会社 スピン流磁化反転素子、スピン軌道トルク型磁気抵抗効果素子、磁気メモリ及び高周波磁気素子
US10741318B2 (en) * 2017-09-05 2020-08-11 Tdk Corporation Spin current magnetization rotational element, spin-orbit-torque magnetoresistance effect element, magnetic memory, and high-frequency magnetic element
EP3680938B1 (en) * 2017-09-07 2024-11-13 TDK Corporation Spin current magnetization reversal element and spin orbit torque type magnetic resistance effect element
JP2019057626A (ja) * 2017-09-21 2019-04-11 Tdk株式会社 スピン流磁化反転素子、スピン軌道トルク型磁気抵抗効果素子及び磁気メモリ
JP7098914B2 (ja) * 2017-11-14 2022-07-12 Tdk株式会社 スピン軌道トルク型磁化回転素子、スピン軌道トルク型磁気抵抗効果素子及び磁気メモリ
JP6540786B1 (ja) * 2017-12-28 2019-07-10 Tdk株式会社 スピン軌道トルク型磁化回転素子、スピン軌道トルク型磁気抵抗効果素子及び磁気メモリ
US10971293B2 (en) * 2017-12-28 2021-04-06 Tdk Corporation Spin-orbit-torque magnetization rotational element, spin-orbit-torque magnetoresistance effect element, and spin-orbit-torque magnetization rotational element manufacturing method
JP7020173B2 (ja) * 2018-02-26 2022-02-16 Tdk株式会社 スピン軌道トルク型磁化回転素子、スピン軌道トルク型磁気抵抗効果素子、磁気メモリ及びスピン軌道トルク型磁化回転素子の製造方法
JP6919608B2 (ja) * 2018-03-16 2021-08-18 Tdk株式会社 スピン軌道トルク型磁化回転素子、スピン軌道トルク型磁気抵抗効果素子及び磁気メモリ
JP7052448B2 (ja) * 2018-03-16 2022-04-12 Tdk株式会社 スピン軌道トルク型磁化回転素子、スピン軌道トルク型磁気抵抗効果素子、磁気メモリ及び発振器
WO2019230341A1 (ja) * 2018-05-31 2019-12-05 Tdk株式会社 スピン軌道トルク型磁化回転素子、スピン軌道トルク型磁気抵抗効果素子及び磁気メモリ
JP2020043167A (ja) * 2018-09-07 2020-03-19 Tdk株式会社 スピン軌道トルク型磁化回転素子及びスピン軌道トルク型磁気抵抗効果素子
JP2020072199A (ja) * 2018-10-31 2020-05-07 Tdk株式会社 スピン軌道トルク型磁化回転素子、スピン軌道トルク型磁気抵抗効果素子及び磁気メモリ

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Publication number Publication date
US11264563B2 (en) 2022-03-01
JP2019047001A (ja) 2019-03-22
US11832526B2 (en) 2023-11-28
US20220140231A1 (en) 2022-05-05
US20210083175A1 (en) 2021-03-18
CN111052398A (zh) 2020-04-21
WO2019045055A1 (ja) 2019-03-07
CN111052398B (zh) 2023-09-29

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