JP6686955B2 - 半導体ウェーハの洗浄方法 - Google Patents
半導体ウェーハの洗浄方法 Download PDFInfo
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- JP6686955B2 JP6686955B2 JP2017065628A JP2017065628A JP6686955B2 JP 6686955 B2 JP6686955 B2 JP 6686955B2 JP 2017065628 A JP2017065628 A JP 2017065628A JP 2017065628 A JP2017065628 A JP 2017065628A JP 6686955 B2 JP6686955 B2 JP 6686955B2
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- semiconductor wafer
- ozone water
- cleaning
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- hydrofluoric acid
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- 239000004065 semiconductor Substances 0.000 title claims description 85
- 238000004140 cleaning Methods 0.000 title claims description 63
- 238000000034 method Methods 0.000 title claims description 27
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 76
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 74
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 68
- 238000003780 insertion Methods 0.000 claims description 21
- 230000037431 insertion Effects 0.000 claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 239000007788 liquid Substances 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 235000012431 wafers Nutrition 0.000 description 89
- 239000002245 particle Substances 0.000 description 37
- 239000000126 substance Substances 0.000 description 7
- 238000007654 immersion Methods 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000001035 drying Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000005661 hydrophobic surface Effects 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000010405 reoxidation reaction Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/08—Acids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01009—Fluorine [F]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
直径300mmのシリコンウェーハを用いて、アンモニア・過水洗浄→純水リンス→フッ酸洗浄→オゾン水洗浄の順にディップ式洗浄を行い、その後乾燥を行った。その際、オゾン水槽内へのシリコンウェーハの挿入速度を、シリコンウェーハの下端がオゾン水に接触してから、シリコンウェーハの上端がオゾン水の液面から50mmの位置となるまで、表1に示す速度として行った。オゾン水槽以外の槽内への挿入速度は、15000mm/minとし、全ての槽からの引き出し速度は、1000mm/minとした。
Claims (4)
- 半導体ウェーハを、フッ酸を充填したフッ酸槽内に挿入して、前記フッ酸に浸漬し、前記フッ酸槽から引き出した後、前記半導体ウェーハを、オゾン水を充填したオゾン水槽内に挿入して、前記オゾン水に浸漬して洗浄する半導体ウェーハの洗浄方法であって、
前記オゾン水槽内への前記半導体ウェーハの挿入を、少なくとも、前記半導体ウェーハの下端が前記オゾン水に接触してから、前記半導体ウェーハが完全にオゾン水に浸漬するまで、挿入速度を20000mm/min以上として行うことを特徴とする半導体ウェーハの洗浄方法。 - 前記フッ酸槽からの前記半導体ウェーハの引き出しを、引き出し速度1000mm/min以下として行うことを特徴とする請求項1に記載の半導体ウェーハの洗浄方法。
- 前記オゾン水槽内への前記半導体ウェーハの挿入を、前記半導体ウェーハの下端が前記オゾン水に接触してから、前記半導体ウェーハの上端が前記オゾン水の液面から50mm以上の位置となるまで、挿入速度を20000mm/min以上として行うことを特徴とする請求項1又は請求項2に記載の半導体ウェーハの洗浄方法。
- 前記半導体ウェーハとして、シリコンウェーハを洗浄することを特徴とする請求項1から請求項3のいずれか一項に記載の半導体ウェーハの洗浄方法。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017065628A JP6686955B2 (ja) | 2017-03-29 | 2017-03-29 | 半導体ウェーハの洗浄方法 |
KR1020197027585A KR102466269B1 (ko) | 2017-03-29 | 2018-03-05 | 반도체 웨이퍼의 세정방법 |
DE112018001115.1T DE112018001115T5 (de) | 2017-03-29 | 2018-03-05 | Verfahren zum Reinigen eines Halbleiterwafers |
US16/491,294 US11177125B2 (en) | 2017-03-29 | 2018-03-05 | Method for cleaning semiconductor wafer |
PCT/JP2018/008197 WO2018180224A1 (ja) | 2017-03-29 | 2018-03-05 | 半導体ウェーハの洗浄方法 |
SG11201908278R SG11201908278RA (en) | 2017-03-29 | 2018-03-05 | Method for cleaning semiconductor wafer |
CN201880019193.1A CN110447088B (zh) | 2017-03-29 | 2018-03-05 | 半导体晶圆的清洗方法 |
TW107107974A TWI755496B (zh) | 2017-03-29 | 2018-03-09 | 半導體晶圓的洗淨方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017065628A JP6686955B2 (ja) | 2017-03-29 | 2017-03-29 | 半導体ウェーハの洗浄方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018170366A JP2018170366A (ja) | 2018-11-01 |
JP6686955B2 true JP6686955B2 (ja) | 2020-04-22 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017065628A Active JP6686955B2 (ja) | 2017-03-29 | 2017-03-29 | 半導体ウェーハの洗浄方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US11177125B2 (ja) |
JP (1) | JP6686955B2 (ja) |
KR (1) | KR102466269B1 (ja) |
CN (1) | CN110447088B (ja) |
DE (1) | DE112018001115T5 (ja) |
SG (1) | SG11201908278RA (ja) |
TW (1) | TWI755496B (ja) |
WO (1) | WO2018180224A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021025092A (ja) * | 2019-08-06 | 2021-02-22 | 株式会社荏原製作所 | 基板処理装置 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2839615B2 (ja) * | 1990-01-24 | 1998-12-16 | 株式会社東芝 | 半導体基板の洗浄液及び半導体装置の製造方法 |
JPH0677201A (ja) * | 1992-06-29 | 1994-03-18 | Matsushita Electric Ind Co Ltd | 基板洗浄方法 |
US5415698A (en) * | 1992-06-29 | 1995-05-16 | Matsushita Electric Industrial Co., Ltd. | Method for cleaning semiconductor wafers |
JP3146841B2 (ja) * | 1994-03-28 | 2001-03-19 | 信越半導体株式会社 | ウエーハのリンス装置 |
JP2893676B2 (ja) * | 1994-05-19 | 1999-05-24 | 信越半導体株式会社 | シリコンウェーハのhf洗浄方法 |
JP2914555B2 (ja) * | 1994-08-30 | 1999-07-05 | 信越半導体株式会社 | 半導体シリコンウェーハの洗浄方法 |
JP3202508B2 (ja) * | 1994-11-29 | 2001-08-27 | 株式会社東芝 | 半導体ウェハの洗浄方法 |
JPH09283483A (ja) | 1996-04-08 | 1997-10-31 | Nkk Corp | 洗浄装置および洗浄方法 |
JPH10256211A (ja) * | 1997-03-11 | 1998-09-25 | Sony Corp | 半導体基板の洗浄方法 |
US5837662A (en) | 1997-12-12 | 1998-11-17 | Memc Electronic Materials, Inc. | Post-lapping cleaning process for silicon wafers |
TW426874B (en) * | 1998-10-14 | 2001-03-21 | United Microelectronics Corp | Method for cleaning a semiconductor wafer |
US6199564B1 (en) * | 1998-11-03 | 2001-03-13 | Tokyo Electron Limited | Substrate processing method and apparatus |
JP4844912B2 (ja) * | 2001-08-01 | 2011-12-28 | 野村マイクロ・サイエンス株式会社 | フォトレジストの除去方法及び除去装置 |
JP4020810B2 (ja) * | 2002-03-29 | 2007-12-12 | 株式会社神戸製鋼所 | 半導体キャリアの寿命測定装置,その方法 |
US20050208774A1 (en) * | 2004-01-08 | 2005-09-22 | Akira Fukunaga | Wet processing method and processing apparatus of substrate |
JP6347232B2 (ja) * | 2015-06-18 | 2018-06-27 | 信越半導体株式会社 | シリコンウェーハの洗浄方法 |
KR101755826B1 (ko) * | 2015-08-13 | 2017-07-10 | 주식회사 엘지실트론 | 웨이퍼 세정장치 및 웨이퍼 세정방법 |
-
2017
- 2017-03-29 JP JP2017065628A patent/JP6686955B2/ja active Active
-
2018
- 2018-03-05 WO PCT/JP2018/008197 patent/WO2018180224A1/ja active Application Filing
- 2018-03-05 US US16/491,294 patent/US11177125B2/en active Active
- 2018-03-05 SG SG11201908278R patent/SG11201908278RA/en unknown
- 2018-03-05 CN CN201880019193.1A patent/CN110447088B/zh active Active
- 2018-03-05 DE DE112018001115.1T patent/DE112018001115T5/de active Pending
- 2018-03-05 KR KR1020197027585A patent/KR102466269B1/ko active IP Right Grant
- 2018-03-09 TW TW107107974A patent/TWI755496B/zh active
Also Published As
Publication number | Publication date |
---|---|
TWI755496B (zh) | 2022-02-21 |
JP2018170366A (ja) | 2018-11-01 |
US11177125B2 (en) | 2021-11-16 |
CN110447088A (zh) | 2019-11-12 |
WO2018180224A1 (ja) | 2018-10-04 |
SG11201908278RA (en) | 2019-10-30 |
TW201841244A (zh) | 2018-11-16 |
KR102466269B1 (ko) | 2022-11-11 |
KR20190129876A (ko) | 2019-11-20 |
DE112018001115T5 (de) | 2019-11-21 |
CN110447088B (zh) | 2023-03-28 |
US20200027721A1 (en) | 2020-01-23 |
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