JP5148313B2 - 気相のフッ化水素酸での洗浄および脱イオン水でのすすぎを用いる分子接合方法 - Google Patents
気相のフッ化水素酸での洗浄および脱イオン水でのすすぎを用いる分子接合方法 Download PDFInfo
- Publication number
- JP5148313B2 JP5148313B2 JP2008037281A JP2008037281A JP5148313B2 JP 5148313 B2 JP5148313 B2 JP 5148313B2 JP 2008037281 A JP2008037281 A JP 2008037281A JP 2008037281 A JP2008037281 A JP 2008037281A JP 5148313 B2 JP5148313 B2 JP 5148313B2
- Authority
- JP
- Japan
- Prior art keywords
- hydrofluoric acid
- free surfaces
- hydrophobic
- deionized water
- molecular bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 title claims abstract description 87
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims abstract description 16
- 239000008367 deionised water Substances 0.000 title claims abstract description 14
- 229910021641 deionized water Inorganic materials 0.000 title claims abstract description 14
- 238000004140 cleaning Methods 0.000 title abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000007789 gas Substances 0.000 claims abstract description 17
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims abstract description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052786 argon Inorganic materials 0.000 claims abstract description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 3
- 230000002209 hydrophobic effect Effects 0.000 claims description 16
- 238000005406 washing Methods 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 abstract description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 17
- 229910052710 silicon Inorganic materials 0.000 abstract description 17
- 239000010703 silicon Substances 0.000 abstract description 17
- 230000005661 hydrophobic surface Effects 0.000 abstract description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 3
- 150000002290 germanium Chemical class 0.000 abstract 1
- 239000012808 vapor phase Substances 0.000 abstract 1
- 239000002245 particle Substances 0.000 description 20
- 239000012071 phase Substances 0.000 description 10
- 238000005530 etching Methods 0.000 description 9
- 239000000243 solution Substances 0.000 description 8
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 6
- 238000011109 contamination Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000001747 exhibiting effect Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000004630 atomic force microscopy Methods 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 239000006193 liquid solution Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- -1 ammonium peroxide Chemical class 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 230000021615 conjugation Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
- H01L21/02049—Dry cleaning only with gaseous HF
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
Description
・気相のフッ化水素酸での自由表面の洗浄ステップと、
・30秒以下の時間の、脱イオン水での前記自由表面のすすぎステップと、
・前記自由表面を接触させるステップと、
を含む。
Claims (6)
- 第1の基板および第2の基板のそれぞれ2つの自由表面の分子接合方法であって、少なくとも連続して、
前記2つの自由表面を疎水性にする、フッ化水素酸での前記2つの自由表面の洗浄ステップと、
前記2つの自由表面を接触させるステップと、
を含み、
前記洗浄ステップが気相のフッ化水素酸で実施され、脱イオン水でのすすぎステップが前記洗浄ステップと前記接触させるステップとの間で、前記2つの自由表面を疎水性に保ち疎水結合をなすために、30秒以下の時間実施されることを特徴とする方法。 - 前記第1および第2の基板が、0と1との間に含まれるxおよびyを持つ化合物SixGe1−xおよびSiyGe1−yによってそれぞれ形成されることを特徴とする、請求項1に記載の方法。
- 前記気相のフッ化水素酸が純粋であることを特徴とする、請求項1および2の一項に記載の方法。
- 前記気相のフッ化水素酸が少なくとも1つの他の気体と混合されることを特徴とする、請求項1および2の一項に記載の方法。
- 前記他の気体が窒素、アルゴンおよびイソプロピル・アルコールから選択されることを特徴とする、請求項4に記載の方法。
- 第1の基板および第2の基板のそれぞれの2つの疎水性の自由表面の分子接合方法であって、少なくとも連続して、
前記2つの自由表面を気相のフッ化水素酸を用いて疎水性にし、
前記2つの疎水性自由表面を脱イオン水で30秒以下の時間すすぎ、
前記2つの疎水性自由表面を接触させる方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR07/01168 | 2007-02-19 | ||
FR0701168A FR2912840B1 (fr) | 2007-02-19 | 2007-02-19 | Procede de collage moleculaire avec nettoyage a l'acide fluorhydrique en phase vapeur et rincage a l'eau deionisee |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008205473A JP2008205473A (ja) | 2008-09-04 |
JP5148313B2 true JP5148313B2 (ja) | 2013-02-20 |
Family
ID=38561203
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008037281A Expired - Fee Related JP5148313B2 (ja) | 2007-02-19 | 2008-02-19 | 気相のフッ化水素酸での洗浄および脱イオン水でのすすぎを用いる分子接合方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8382933B2 (ja) |
EP (1) | EP1959478B1 (ja) |
JP (1) | JP5148313B2 (ja) |
AT (1) | ATE521082T1 (ja) |
FR (1) | FR2912840B1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3074959B1 (fr) * | 2017-12-08 | 2019-12-20 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de collage par adhesion directe |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3175323B2 (ja) * | 1991-08-26 | 2001-06-11 | 株式会社デンソー | 半導体基板の製造方法 |
US5451547A (en) * | 1991-08-26 | 1995-09-19 | Nippondenso Co., Ltd. | Method of manufacturing semiconductor substrate |
US5783495A (en) * | 1995-11-13 | 1998-07-21 | Micron Technology, Inc. | Method of wafer cleaning, and system and cleaning solution regarding same |
US5851303A (en) * | 1996-05-02 | 1998-12-22 | Hemlock Semiconductor Corporation | Method for removing metal surface contaminants from silicon |
US6065481A (en) * | 1997-03-26 | 2000-05-23 | Fsi International, Inc. | Direct vapor delivery of enabling chemical for enhanced HF etch process performance |
US6740247B1 (en) | 1999-02-05 | 2004-05-25 | Massachusetts Institute Of Technology | HF vapor phase wafer cleaning and oxide etching |
US6787885B2 (en) * | 2002-11-04 | 2004-09-07 | The United States Of America As Represented By The Secretary Of The Navy | Low temperature hydrophobic direct wafer bonding |
US20050070120A1 (en) * | 2003-08-28 | 2005-03-31 | International Sematech | Methods and devices for an insulated dielectric interface between high-k material and silicon |
-
2007
- 2007-02-19 FR FR0701168A patent/FR2912840B1/fr not_active Expired - Fee Related
-
2008
- 2008-02-07 EP EP08354013A patent/EP1959478B1/fr not_active Not-in-force
- 2008-02-07 AT AT08354013T patent/ATE521082T1/de not_active IP Right Cessation
- 2008-02-08 US US12/068,638 patent/US8382933B2/en not_active Expired - Fee Related
- 2008-02-19 JP JP2008037281A patent/JP5148313B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
FR2912840B1 (fr) | 2009-04-24 |
FR2912840A1 (fr) | 2008-08-22 |
US20080196747A1 (en) | 2008-08-21 |
EP1959478A2 (fr) | 2008-08-20 |
EP1959478A3 (fr) | 2010-05-05 |
US8382933B2 (en) | 2013-02-26 |
JP2008205473A (ja) | 2008-09-04 |
ATE521082T1 (de) | 2011-09-15 |
EP1959478B1 (fr) | 2011-08-17 |
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