JP6685884B2 - 半導体モジュール - Google Patents

半導体モジュール Download PDF

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Publication number
JP6685884B2
JP6685884B2 JP2016231244A JP2016231244A JP6685884B2 JP 6685884 B2 JP6685884 B2 JP 6685884B2 JP 2016231244 A JP2016231244 A JP 2016231244A JP 2016231244 A JP2016231244 A JP 2016231244A JP 6685884 B2 JP6685884 B2 JP 6685884B2
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Japan
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semiconductor package
semiconductor
wiring
side conductor
igbt
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JP2016231244A
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English (en)
Japanese (ja)
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JP2017108130A5 (OSRAM
JP2017108130A (ja
Inventor
達郎 刀禰館
達郎 刀禰館
英太郎 三宅
英太郎 三宅
健太郎 高尾
健太郎 高尾
史朗 岡田
史朗 岡田
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Publication of JP2017108130A publication Critical patent/JP2017108130A/ja
Publication of JP2017108130A5 publication Critical patent/JP2017108130A5/ja
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    • H—ELECTRICITY
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    • H10W40/20—Arrangements for cooling
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs
    • H—ELECTRICITY
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    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4421—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being copper
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    • H10W40/77—Auxiliary members characterised by their shape
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
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    • H10W70/65—Shapes or dispositions of interconnections
    • H10W70/658—Shapes or dispositions of interconnections for devices provided for in groups H10D8/00 - H10D48/00
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    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
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    • H10W72/07354—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in dispositions
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    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
JP2016231244A 2015-11-30 2016-11-29 半導体モジュール Active JP6685884B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015233751 2015-11-30
JP2015233751 2015-11-30

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JP2017108130A JP2017108130A (ja) 2017-06-15
JP2017108130A5 JP2017108130A5 (OSRAM) 2019-03-22
JP6685884B2 true JP6685884B2 (ja) 2020-04-22

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JP (1) JP6685884B2 (OSRAM)

Families Citing this family (9)

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Publication number Priority date Publication date Assignee Title
CN109451779B (zh) * 2016-07-08 2020-10-16 三菱电机株式会社 半导体装置及电力转换装置
JP6643481B2 (ja) * 2016-07-27 2020-02-12 株式会社日立製作所 半導体モジュールおよび半導体モジュールの製造方法
WO2018142864A1 (ja) * 2017-02-06 2018-08-09 富士電機株式会社 半導体モジュール、電気自動車およびパワーコントロールユニット
JP6470328B2 (ja) * 2017-02-09 2019-02-13 株式会社東芝 半導体モジュール
CN110447094B (zh) * 2017-03-30 2023-12-12 三菱电机株式会社 半导体装置及其制造方法、及电力变换装置
TWI675441B (zh) * 2018-05-14 2019-10-21 欣興電子股份有限公司 封裝載板結構及其製造方法
CN115380378A (zh) * 2020-04-17 2022-11-22 罗姆股份有限公司 半导体装置
JP7354076B2 (ja) 2020-09-24 2023-10-02 株式会社東芝 半導体モジュール
JP7301805B2 (ja) * 2020-09-24 2023-07-03 株式会社東芝 半導体モジュール

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TW353220B (en) * 1996-08-20 1999-02-21 Toshiba Corp Silicon nitride circuit board and semiconductor module
JP2006511085A (ja) * 2002-12-20 2006-03-30 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 電子デバイス及びその製造方法
JP2004241734A (ja) * 2003-02-10 2004-08-26 Toyota Industries Corp 半導体モジュール
JP2005109100A (ja) * 2003-09-30 2005-04-21 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2006080153A (ja) * 2004-09-07 2006-03-23 Toshiba Corp 半導体装置
JP4770533B2 (ja) 2005-05-16 2011-09-14 富士電機株式会社 半導体装置の製造方法および半導体装置
JP4775327B2 (ja) * 2007-06-06 2011-09-21 富士電機株式会社 半導体装置の製造方法
US8138587B2 (en) * 2008-09-30 2012-03-20 Infineon Technologies Ag Device including two mounting surfaces
JP2011086889A (ja) * 2009-10-19 2011-04-28 Renesas Electronics Corp 半導体装置およびその製造方法
US8120158B2 (en) * 2009-11-10 2012-02-21 Infineon Technologies Ag Laminate electronic device
JP5253455B2 (ja) * 2010-06-01 2013-07-31 三菱電機株式会社 パワー半導体装置
JP5520889B2 (ja) * 2011-06-24 2014-06-11 日立オートモティブシステムズ株式会社 パワー半導体モジュール及びそれを用いた電力変換装置
JP5706251B2 (ja) * 2011-06-30 2015-04-22 ルネサスエレクトロニクス株式会社 半導体装置
JP5863602B2 (ja) 2011-08-31 2016-02-16 三菱電機株式会社 電力用半導体装置
JP2013097560A (ja) 2011-10-31 2013-05-20 Mitsubishi Heavy Ind Ltd 建設工事の工程最適化システム及び建設工事の工程最適化方法
JP5965687B2 (ja) 2012-03-23 2016-08-10 株式会社 日立パワーデバイス パワー半導体モジュール
JP2014157927A (ja) * 2013-02-15 2014-08-28 Denso Corp 半導体装置及びその製造方法
JP2015095560A (ja) * 2013-11-12 2015-05-18 株式会社デンソー パワーモジュール
JP2015144188A (ja) * 2014-01-31 2015-08-06 株式会社東芝 半導体装置及びその製造方法

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US10217690B2 (en) 2019-02-26
JP2017108130A (ja) 2017-06-15

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