JP6646460B2 - 基板洗浄装置及び基板処理装置 - Google Patents
基板洗浄装置及び基板処理装置 Download PDFInfo
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- JP6646460B2 JP6646460B2 JP2016026134A JP2016026134A JP6646460B2 JP 6646460 B2 JP6646460 B2 JP 6646460B2 JP 2016026134 A JP2016026134 A JP 2016026134A JP 2016026134 A JP2016026134 A JP 2016026134A JP 6646460 B2 JP6646460 B2 JP 6646460B2
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- 239000000758 substrate Substances 0.000 title claims description 225
- 238000004140 cleaning Methods 0.000 title claims description 195
- 238000003825 pressing Methods 0.000 claims description 152
- 238000001514 detection method Methods 0.000 claims description 81
- 239000007788 liquid Substances 0.000 claims description 40
- 238000005498 polishing Methods 0.000 description 12
- 238000001035 drying Methods 0.000 description 10
- 230000008859 change Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 239000002002 slurry Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 230000005484 gravity Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- SWXQKHHHCFXQJF-UHFFFAOYSA-N azane;hydrogen peroxide Chemical compound [NH4+].[O-]O SWXQKHHHCFXQJF-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- CABDFQZZWFMZOD-UHFFFAOYSA-N hydrogen peroxide;hydrochloride Chemical compound Cl.OO CABDFQZZWFMZOD-UHFFFAOYSA-N 0.000 description 1
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- DGCPSAFMAXHHDM-UHFFFAOYSA-N sulfuric acid;hydrofluoride Chemical compound F.OS(O)(=O)=O DGCPSAFMAXHHDM-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02096—Cleaning only mechanical cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
Description
基板に当接して当該基板の洗浄を行う洗浄部材と、
前記洗浄部材を回転させる部材回転部と、
前記洗浄部材を前記基板に押し付ける押付駆動部と、
前記部材回転部に加えられるトルクを検出するトルク検出部と、
前記トルク検出部からの検出結果に基づき前記押付力を制御する制御部と、
を備える。
前記押付駆動部による前記洗浄部材の前記基板に対する押付力を検出する押付力検出部をさらに備え、
前記制御部が、前記押付力検出部からの検出結果にも基づいて前記押付力を制御してもよい。
前記制御部は、前記洗浄部材が前記基板に当接してから第1時間が到来するまでは前記押付力検出部からの前記検出結果に基づき前記押付力を制御し、前記第1時間が経過した後は前記トルク検出部からの前記検出結果に基づき前記押付力を制御してもよい。
前記制御部は、前記第1時間が到来した時、前記押付力検出部からの前記検出結果に基づき前記押圧力が第1範囲内か判断し、前記押圧力が前記第1範囲の範囲外である場合に前記押圧力が前記第1範囲内になるように前記押付駆動部を制御してもよい。
前記トルク検出部は前記トルクを所定時間内で複数回検出し、
前記制御部は、前記トルク検出部で検出された複数のトルクの値に基づいて前記押付力を制御してもよい。
前記基板に洗浄液を供給する洗浄液供給部をさらに備え、
前記制御部が、少なくとも2つの異なる種類の洗浄液に対して異なる値のトルクとなるよう前記押付力を制御してもよい。
前記制御部は、前記トルク検出部からの前記検出結果に基づき前記トルクが第2範囲内になるように、前記押付駆動部を継続的又は断続的に制御してもよい。
前記基板を回転させるスピンドルをさらに備え、
前記制御部が、前記トルク検出部からの前記検出結果に基づき前記トルクが第一閾値以上とならないように前記押付駆動部を制御することで、前記基板の回転が停止されることを予め防止してもよい。
前述した基板洗浄装置を備えている。
《構成》
以下、本発明に係る基板洗浄装置及び基板処理装置の実施の形態について、図面を参照して説明する。ここで、図1乃至図5は本発明の実施の形態を説明するための図である。
本実施の形態の基板処理装置を用いた基板Wの処理方法(基板処理方法)の一例は、以下のようになる。なお、上記「構成」で述べた全ての態様を「方法」において適用することができる。また、逆に、「方法」において述べた全ての態様を「構成」において適用することができる。また、本実施の形態の方法を実施させるためのプログラムは記録媒体に記録されてもよく、この記録媒体をコンピュータ(図示せず)で読み取ることで、本実施の形態の方法が基板処理装置で実施されてもよい。
次に、上述した構成からなる本実施の形態による作用・効果であって、未だ述べていないものを中心に説明する。
15 ロール部材回転部(部材回転部)
16 トルク検出部
18 押付力検出部
19 ロール押付駆動部(押付駆動部)
21 ペン部材(洗浄部材)
25 ペン部材回転部(部材回転部)
26 トルク検出部
28 押付力検出部
29 ペン押付駆動部(押付駆動部)
40 スピンドル(支持部材)
50 制御部
60 洗浄液供給部
Claims (7)
- 基板に当接して当該基板の洗浄を行う洗浄部材と、
前記洗浄部材を回転させる部材回転部と、
前記洗浄部材を前記基板に押し付ける押付駆動部と、
前記部材回転部に加えられるトルクを検出するトルク検出部と、
前記トルク検出部からの検出結果に基づき前記基板に対する押付力を制御する制御部と、
前記押付駆動部による前記洗浄部材の前記基板に対する押付力を検出する押付力検出部と、
を備え、
前記制御部は、前記洗浄部材が前記基板に当接してから第1時間が到来するまでは前記押付力検出部からの前記検出結果に基づき前記押付力を制御し、前記第1時間が経過した後は前記トルク検出部からの前記検出結果に基づき前記押付力を制御することを特徴とする基板洗浄装置。 - 前記制御部は、前記第1時間が到来した時、前記押付力検出部からの前記検出結果に基づき前記押圧力が第1範囲内か判断し、前記押圧力が前記第1範囲の範囲外である場合に前記押圧力が前記第1範囲内になるように前記押付駆動部を制御することを特徴とする請求項1に記載の基板洗浄装置。
- 前記トルク検出部は前記トルクを所定時間内で複数回検出し、
前記制御部は、前記トルク検出部で検出された複数のトルクの値に基づいて前記押付力を制御することを特徴とする請求項1又は2のいずれかに記載の基板洗浄装置。 - 前記基板に洗浄液を供給する洗浄液供給部をさらに備え、
前記制御部は、少なくとも2つの異なる種類の洗浄液に対して異なる値のトルクとなるよう前記押付力を制御することを特徴とする請求項1乃至3のいずれか1項に記載の基板洗浄装置。 - 前記制御部は、前記トルク検出部からの前記検出結果に基づき前記トルクが第2範囲内になるように、前記押付駆動部を継続的又は断続的に制御することを特徴とする請求項1乃至4のいずれか1項に記載の基板洗浄装置。
- 前記基板を回転させるスピンドルをさらに備え、
前記制御部は、前記トルク検出部からの前記検出結果に基づき前記トルクが第一閾値以上とならないように前記押付駆動部を制御することで、前記基板の回転が停止されることを予め防止することを特徴とする請求項1乃至5のいずれか1項に記載の基板洗浄装置。 - 請求項1乃至6のいずれか1項に記載の基板洗浄装置を備えたことを特徴とする基板処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2016026134A JP6646460B2 (ja) | 2016-02-15 | 2016-02-15 | 基板洗浄装置及び基板処理装置 |
TW106103946A TWI806824B (zh) | 2016-02-15 | 2017-02-07 | 基板洗淨裝置及基板處理裝置 |
KR1020170020045A KR102382453B1 (ko) | 2016-02-15 | 2017-02-14 | 기판 세정 장치 및 기판 처리 장치 |
US15/432,471 US10546764B2 (en) | 2016-02-15 | 2017-02-14 | Substrate cleaning apparatus and substrate processing apparatus |
CN201710081701.6A CN107086190B (zh) | 2016-02-15 | 2017-02-15 | 基板清洗装置和基板处理装置 |
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JP2016026134A JP6646460B2 (ja) | 2016-02-15 | 2016-02-15 | 基板洗浄装置及び基板処理装置 |
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JP2017147275A JP2017147275A (ja) | 2017-08-24 |
JP6646460B2 true JP6646460B2 (ja) | 2020-02-14 |
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US (1) | US10546764B2 (ja) |
JP (1) | JP6646460B2 (ja) |
KR (1) | KR102382453B1 (ja) |
CN (1) | CN107086190B (ja) |
TW (1) | TWI806824B (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP7079164B2 (ja) * | 2018-07-06 | 2022-06-01 | 株式会社荏原製作所 | 基板洗浄装置および基板洗浄方法 |
CN109482538A (zh) * | 2018-12-10 | 2019-03-19 | 北京半导体专用设备研究所(中国电子科技集团公司第四十五研究所) | 晶圆洗刷装置 |
JP7452960B2 (ja) | 2019-08-20 | 2024-03-19 | 株式会社ディスコ | 加工装置 |
US11948811B2 (en) | 2019-12-26 | 2024-04-02 | Ebara Corporation | Cleaning apparatus and polishing apparatus |
US11848216B2 (en) * | 2020-03-30 | 2023-12-19 | Ebara Corporation | Cleaning apparatus for cleaning member, substrate cleaning apparatus and cleaning member assembly |
JP2022113186A (ja) * | 2021-01-25 | 2022-08-04 | 株式会社荏原製作所 | 基板洗浄装置、基板洗浄方法 |
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US6269510B1 (en) * | 1999-01-04 | 2001-08-07 | International Business Machines Corporation | Post CMP clean brush with torque monitor |
JP3953716B2 (ja) * | 2000-08-01 | 2007-08-08 | 株式会社荏原製作所 | 基板洗浄装置 |
US6986185B2 (en) * | 2001-10-30 | 2006-01-17 | Applied Materials Inc. | Methods and apparatus for determining scrubber brush pressure |
JP3821104B2 (ja) * | 2003-02-26 | 2006-09-13 | 松下電器産業株式会社 | 空気調和機の制御装置 |
JP2005277082A (ja) * | 2004-03-24 | 2005-10-06 | Kaijo Corp | 基板洗浄装置 |
WO2006035624A1 (en) | 2004-09-28 | 2006-04-06 | Ebara Corporation | Substrate cleaning apparatus and method for determining timing of replacement of cleaning member |
JP2006261393A (ja) * | 2005-03-17 | 2006-09-28 | Seiko Epson Corp | 基板の洗浄装置および洗浄方法 |
JP2006332534A (ja) * | 2005-05-30 | 2006-12-07 | Tokyo Seimitsu Co Ltd | 基板洗浄装置 |
WO2010096600A2 (en) * | 2009-02-20 | 2010-08-26 | Orthodyne Electronics Corporation | Systems and methods for processing solar substrates |
JP5886224B2 (ja) * | 2012-05-23 | 2016-03-16 | 株式会社荏原製作所 | 基板洗浄方法 |
JP5878441B2 (ja) * | 2012-08-20 | 2016-03-08 | 株式会社荏原製作所 | 基板洗浄装置及び基板処理装置 |
JP6082598B2 (ja) * | 2013-01-09 | 2017-02-15 | 日立造船株式会社 | セグメント真円度測定装置およびセグメント真円度測定方法 |
US20140310895A1 (en) * | 2013-04-19 | 2014-10-23 | Applied Materials, Inc. | Scrubber brush force control assemblies, apparatus and methods for chemical mechanical polishing |
US10229842B2 (en) * | 2013-07-26 | 2019-03-12 | Applied Materials, Inc. | Double sided buff module for post CMP cleaning |
JP6163081B2 (ja) * | 2013-11-05 | 2017-07-12 | アイオン株式会社 | ブラシローラ |
JP2015220402A (ja) * | 2014-05-20 | 2015-12-07 | 株式会社荏原製作所 | 基板洗浄装置および基板洗浄装置で実行される方法 |
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- 2016-02-15 JP JP2016026134A patent/JP6646460B2/ja active Active
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2017
- 2017-02-07 TW TW106103946A patent/TWI806824B/zh active
- 2017-02-14 US US15/432,471 patent/US10546764B2/en active Active
- 2017-02-14 KR KR1020170020045A patent/KR102382453B1/ko active IP Right Grant
- 2017-02-15 CN CN201710081701.6A patent/CN107086190B/zh active Active
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Publication number | Publication date |
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TWI806824B (zh) | 2023-07-01 |
JP2017147275A (ja) | 2017-08-24 |
US10546764B2 (en) | 2020-01-28 |
KR102382453B1 (ko) | 2022-04-01 |
US20170236730A1 (en) | 2017-08-17 |
CN107086190B (zh) | 2022-03-22 |
CN107086190A (zh) | 2017-08-22 |
TW201729912A (zh) | 2017-09-01 |
KR20170095748A (ko) | 2017-08-23 |
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