JP6632450B2 - 圧電素子 - Google Patents
圧電素子 Download PDFInfo
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- JP6632450B2 JP6632450B2 JP2016069146A JP2016069146A JP6632450B2 JP 6632450 B2 JP6632450 B2 JP 6632450B2 JP 2016069146 A JP2016069146 A JP 2016069146A JP 2016069146 A JP2016069146 A JP 2016069146A JP 6632450 B2 JP6632450 B2 JP 6632450B2
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- 239000002245 particle Substances 0.000 claims description 60
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 49
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 8
- 125000005842 heteroatom Chemical group 0.000 claims description 3
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 230000001133 acceleration Effects 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000001878 scanning electron micrograph Methods 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910000480 nickel oxide Inorganic materials 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002270 dispersing agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 2
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 2
- 239000004014 plasticizer Substances 0.000 description 2
- 238000013001 point bending Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
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- C04B35/49—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates
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- H10N30/00—Piezoelectric or electrostrictive devices
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- H10N30/8548—Lead-based oxides
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Description
1.概要
図1は、実施形態に係る圧電素子1の構成を示す斜視図である。圧電素子1は、圧電体3、第1電極E1及び第2電極E2を備える。第1電極E1は、第1内部電極5と第1外部電極7を有する。第2電極E2は、第2内部電極15と第2外部電極9を有する。圧電素子1は、例えば、ハードディスク装置(HDD)のヘッドサスペンションに設けられるヘッドスライダを駆動するためのアクチュエータとして好適に用いられる。
圧電体3は、長手方向に延びる略直方体状に形成される。圧電体3は、一対の端面3a,3b、一対の第1側面3c,3d及び一対の第2側面3e,3fを有する。一対の端面3a,3b、一対の第1側面3c,3d及び一対の第2側面3e,3fは、圧電体3の表面である。一対の端面3a,3bは、長手方向に対して垂直であり、互いに対向する。一対の第1側面3c,3dは、長手方向と平行に延びており、互いに対向する。一対の第2側面3e,3fは、長手方向と平行に延びており、互いに対向する。一対の第2側面3e,3fは、一対の第1側面3c,3dと直交する。
第1内部電極5は、圧電体3に埋設される。第1内部電極5は、一対の第1側面3c,3dと平行に形成される。第1内部電極5は、板状に形成される。第1内部電極5は、端面3aに露出し、かつ、端面3bには露出しない。第1内部電極5は、一対の第2側面3e,3fそれぞれに露出する。第1内部電極5は、例えばPtによって構成することができる。第1内部電極5の厚みは特に制限されないが、例えば0.5μm〜3.0μmにすることができる。
第2内部電極15は、圧電体3に埋設される。第2内部電極15は、一対の第1側面3c,3dと平行に形成される。第2内部電極15は、第1内部電極5と第3電極部73の間に配置される。第2内部電極15は、板状に形成される。第2内部電極15は、端面3bに露出し、かつ、端面3aには露出しない。第2内部電極15は、一対の第2側面3e,3fそれぞれに露出する。第2内部電極15は、例えばPtによって構成することができる。第2内部電極15の厚みは特に制限されないが、例えば0.5μm〜3.0μmにすることができる。
1.表面領域31と内部領域32
図2は、図1のII−II断面図である。圧電体3は、表面領域31と内部領域32とを有する。
表面領域31及び内部領域32それぞれは、主相としてPZTを含有する。表面領域31におけるPZTの含有率は、96vol%以上とすることができる。内部領域32におけるPZTの含有率は、97vol%以上とすることができる。表面領域31は、異相としてPZT以外の成分を含有する。内部領域32は、異相を含有していてもよいし、異相を含有していなくてもよい。
表面領域31の断面における異相の平均円相当径S1は、内部領域32の断面における異相の平均円相当径S2よりも大きいことが好ましい。表面領域31における異相の平均円相当径S1は特に制限されないが、0.5μm以上2.0μm以下とすることができる。内部領域32における異相の平均円相当径S2は特に制限されないが、0.1μm以上1.0μm以下とすることができる。
また、表面領域31を構成するPZT粒子の平均粒径U1は、内部領域32を構成するPZT粒子の平均粒径U2よりも小さい。表面領域31を構成するPZT粒子の平均粒径U1は特に制限されないが、0.90μm以下とすることができ、0.85μm以下が好ましい。内部領域32を構成するPZT粒子の平均粒径U2は特に制限されないが、0.95μm以上とすることができ、1.0μm以上が好ましい。
本発明は以上のような実施形態に限定されるものではなく、本発明の範囲を逸脱しない範囲で種々の変形又は変更が可能である。
図7は、実施例1〜3に係る圧電素子の製造方法を説明するための図である。
比較例1,2では、表面領域用グリーンシートに異相成分としてAl2O3を混合しないこと以外は、実施例1〜3と同じ工程にて圧電素子を作製した。比較例1,2に係る圧電素子のサイズは、実施例1〜3に係る圧電素子のサイズと同じであった。
まず、実施例1〜3及び比較例1,2の圧電素子を切断して、表面領域と内部領域の断面を露出させた。
まず、SEM(日本電子製)を所定条件(観察範囲:深さ方向19μm×面方向24μm、加速電圧:15.0kV、観察倍率:5000倍)で用いて、表面領域の断面上の1箇所(圧電体の表面付近)における反射電子像を取得した。
図8に示すように、いわゆる3点曲げ試験によって、実施例1〜3及び比較例1,2の圧電素子の破壊強度を測定した。測定結果を表1に示す。
3 圧電体
31 表面領域
32 内部領域
E1 第1電極
E2 第2電極
Claims (4)
- チタン酸ジルコン酸鉛を主相とし、チタン酸ジルコン酸鉛とは異なる成分を異相とする圧電体と、
前記圧電体に設けられる一対の電極と、
を備え、
前記圧電体は、表面から10μm以内の表面領域と、前記表面から10μm超の内部領域とを有し、
前記表面領域の断面における前記異相の面積占有率は、前記内部領域の断面における前記異相の面積占有率よりも0.75%以上大きく、
前記表面領域の断面における前記異相の面積占有率は、1.6%以上であり、
前記内部領域の断面における前記異相の面積占有率は、1.3%以下である、
圧電素子。 - 前記表面領域を構成するチタン酸ジルコン酸鉛粒子の平均粒径は、前記内部領域を構成するチタン酸ジルコン酸鉛粒子の平均粒径よりも小さい、
請求項1に記載の圧電素子。 - 前記表面領域の断面における前記異相の平均円相当径は、前記内部領域の断面における前記異相の平均円相当径よりも大きい、
請求項1又は2に記載の圧電素子。 - 前記表面領域の断面における前記異相の個数は、前記内部領域の断面における前記異相の個数よりも多い、
請求項1乃至3のいずれかに記載の圧電素子。
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