JP6626607B2 - 電力およびｒｆ用途用の設計された基板構造 - Google Patents

電力およびｒｆ用途用の設計された基板構造 Download PDF

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JP6626607B2
JP6626607B2 JP2018565352A JP2018565352A JP6626607B2 JP 6626607 B2 JP6626607 B2 JP 6626607B2 JP 2018565352 A JP2018565352 A JP 2018565352A JP 2018565352 A JP2018565352 A JP 2018565352A JP 6626607 B2 JP6626607 B2 JP 6626607B2
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layer
epitaxial
single crystal
crystal silicon
silicon
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JP2019523994A (ja
JP2019523994A5 (zh
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オドノブリュードフ，ウラジミール
バセリ，セム
ファーレンズ，シャリ
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クロミス，インコーポレイテッド
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
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    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
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    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
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    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
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    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
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  • Crystallography & Structural Chemistry (AREA)
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  • Metallurgy (AREA)
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  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
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JP2018565352A 2016-06-14 2017-06-13 電力およびｒｆ用途用の設計された基板構造 Active JP6626607B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662350077P 2016-06-14 2016-06-14
US201662350084P 2016-06-14 2016-06-14
US62/350,077 2016-06-14
US62/350,084 2016-06-14
PCT/US2017/037252 WO2017218536A1 (en) 2016-06-14 2017-06-13 Engineered substrate structure for power and rf applications

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JP2019217661A Division JP7001660B2 (ja) 2016-06-14 2019-12-01 電力およびｒｆ用途用の設計された基板構造

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JP2019523994A JP2019523994A (ja) 2019-08-29
JP2019523994A5 JP2019523994A5 (zh) 2019-11-28
JP6626607B2 true JP6626607B2 (ja) 2019-12-25

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JP2018565352A Active JP6626607B2 (ja) 2016-06-14 2017-06-13 電力およびｒｆ用途用の設計された基板構造
JP2019217661A Active JP7001660B2 (ja) 2016-06-14 2019-12-01 電力およびｒｆ用途用の設計された基板構造
JP2021210164A Active JP7416556B2 (ja) 2016-06-14 2021-12-24 電力およびｒｆ用途用の設計された基板構造
JP2023161626A Pending JP2023182643A (ja) 2016-06-14 2023-09-25 電力およびｒｆ用途用の設計された基板構造

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JP2021210164A Active JP7416556B2 (ja) 2016-06-14 2021-12-24 電力およびｒｆ用途用の設計された基板構造
JP2023161626A Pending JP2023182643A (ja) 2016-06-14 2023-09-25 電力およびｒｆ用途用の設計された基板構造

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EP (1) EP3469119A4 (zh)
JP (4) JP6626607B2 (zh)
KR (1) KR102361057B1 (zh)
CN (2) CN114256068A (zh)
SG (1) SG11201810919UA (zh)
TW (2) TWI743136B (zh)
WO (1) WO2017218536A1 (zh)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11387101B2 (en) 2016-06-14 2022-07-12 QROMIS, Inc. Methods of manufacturing engineered substrate structures for power and RF applications
KR20230020968A (ko) 2020-06-09 2023-02-13 신에쓰 가가꾸 고교 가부시끼가이샤 Iii족 질화물계 에피택셜 성장용 기판과 그 제조 방법
KR20230031835A (ko) 2020-07-01 2023-03-07 신에쓰 가가꾸 고교 가부시끼가이샤 대구경 iii족 질화물계 에피택셜 성장용 기판과 그 제조 방법
WO2023074045A1 (ja) 2021-10-27 2023-05-04 信越化学工業株式会社 エピタキシャル成長用種基板およびその製造方法、ならびに半導体基板およびその製造方法
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