JP6613470B2 - 多結晶仕上げを有する半導体ウエハを処理する方法 - Google Patents

多結晶仕上げを有する半導体ウエハを処理する方法 Download PDF

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Publication number
JP6613470B2
JP6613470B2 JP2017559654A JP2017559654A JP6613470B2 JP 6613470 B2 JP6613470 B2 JP 6613470B2 JP 2017559654 A JP2017559654 A JP 2017559654A JP 2017559654 A JP2017559654 A JP 2017559654A JP 6613470 B2 JP6613470 B2 JP 6613470B2
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Prior art keywords
wafer
polishing
silicon layer
pad
semiconductor wafer
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Japanese (ja)
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JP2018518050A5 (https=
JP2018518050A (ja
Inventor
グオチャン・ディ・ジャン
マーク・エス・クルックス
トレイシー・エム・レイガン
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GlobalWafers Co Ltd
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GlobalWafers Co Ltd
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Priority to JP2019186978A priority Critical patent/JP6955537B2/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
    • B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3456—Polycrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/123—Preparing bulk and homogeneous wafers by grinding or lapping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
JP2017559654A 2015-05-29 2016-05-26 多結晶仕上げを有する半導体ウエハを処理する方法 Active JP6613470B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2019186978A JP6955537B2 (ja) 2015-05-29 2019-10-10 多結晶仕上げを有する半導体ウエハを処理する方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562168247P 2015-05-29 2015-05-29
US62/168,247 2015-05-29
PCT/US2016/034428 WO2016196216A1 (en) 2015-05-29 2016-05-26 Methods for processing semiconductor wafers having a polycrystalline finish

Related Child Applications (1)

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JP2019186978A Division JP6955537B2 (ja) 2015-05-29 2019-10-10 多結晶仕上げを有する半導体ウエハを処理する方法

Publications (3)

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JP2018518050A JP2018518050A (ja) 2018-07-05
JP2018518050A5 JP2018518050A5 (https=) 2019-07-04
JP6613470B2 true JP6613470B2 (ja) 2019-12-04

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JP2019186978A Active JP6955537B2 (ja) 2015-05-29 2019-10-10 多結晶仕上げを有する半導体ウエハを処理する方法

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Country Link
US (2) US10699908B2 (https=)
EP (2) EP3576136A1 (https=)
JP (2) JP6613470B2 (https=)
CN (2) CN107851579B (https=)
TW (2) TWI742938B (https=)
WO (1) WO2016196216A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
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JP6732382B2 (ja) * 2016-10-12 2020-07-29 株式会社ディスコ 加工装置及び被加工物の加工方法
CN110497303B (zh) * 2018-05-16 2024-06-07 长鑫存储技术有限公司 化学机械研磨制程方法及系统
JP7258443B2 (ja) * 2019-10-02 2023-04-17 株式会社ディスコ ドレッシング工具
US12482662B2 (en) * 2022-02-21 2025-11-25 Globalwafers Co., Ltd. Systems and methods for producing epitaxial wafers
JP7757903B2 (ja) * 2022-08-09 2025-10-22 株式会社Sumco ウェーハの片面研磨方法、ウェーハの製造方法、およびウェーハの片面研磨装置
JP7757902B2 (ja) * 2022-08-09 2025-10-22 株式会社Sumco ウェーハの片面研磨方法、ウェーハの製造方法、およびウェーハの片面研磨装置

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JPH1098016A (ja) * 1996-09-20 1998-04-14 Speedfam Co Ltd 半導体ウェハ研磨装置
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KR100643628B1 (ko) 2005-11-04 2006-11-10 제일모직주식회사 다결정 실리콘 연마용 ｃｍｐ 슬러리 조성물 및 이의 제조방법
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Also Published As

Publication number Publication date
JP2020025110A (ja) 2020-02-13
EP3576136A1 (en) 2019-12-04
WO2016196216A8 (en) 2017-12-14
TWI714591B (zh) 2021-01-01
EP3304580B1 (en) 2019-07-10
JP6955537B2 (ja) 2021-10-27
CN107851579A (zh) 2018-03-27
TWI742938B (zh) 2021-10-11
CN114102269A (zh) 2022-03-01
TW202113960A (zh) 2021-04-01
TW201705254A (zh) 2017-02-01
JP2018518050A (ja) 2018-07-05
US20180151384A1 (en) 2018-05-31
US11355346B2 (en) 2022-06-07
US10699908B2 (en) 2020-06-30
CN114102269B (zh) 2024-09-24
CN107851579B (zh) 2021-11-09
EP3304580A1 (en) 2018-04-11
US20200312671A1 (en) 2020-10-01
WO2016196216A1 (en) 2016-12-08

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