CN107851579B - 用于处理具有多晶磨光的半导体晶片的方法 - Google Patents

用于处理具有多晶磨光的半导体晶片的方法 Download PDF

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Publication number
CN107851579B
CN107851579B CN201680030931.3A CN201680030931A CN107851579B CN 107851579 B CN107851579 B CN 107851579B CN 201680030931 A CN201680030931 A CN 201680030931A CN 107851579 B CN107851579 B CN 107851579B
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CN
China
Prior art keywords
wafer
polishing
silicon layer
pad
semiconductor wafer
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CN201680030931.3A
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English (en)
Chinese (zh)
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CN107851579A (zh
Inventor
G·D·张
M·S·克鲁克斯
T·M·拉根
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GlobalWafers Co Ltd
Original Assignee
SUNEDISON SEMICONDUCTOR Ltd (UEN201334164H)
GlobalWafers Co Ltd
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Priority to CN202111316707.XA priority Critical patent/CN114102269B/zh
Publication of CN107851579A publication Critical patent/CN107851579A/zh
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
    • B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3456—Polycrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/123—Preparing bulk and homogeneous wafers by grinding or lapping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
CN201680030931.3A 2015-05-29 2016-05-26 用于处理具有多晶磨光的半导体晶片的方法 Active CN107851579B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202111316707.XA CN114102269B (zh) 2015-05-29 2016-05-26 用于处理具有多晶磨光的半导体晶片的方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562168247P 2015-05-29 2015-05-29
US62/168,247 2015-05-29
PCT/US2016/034428 WO2016196216A1 (en) 2015-05-29 2016-05-26 Methods for processing semiconductor wafers having a polycrystalline finish

Related Child Applications (1)

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CN202111316707.XA Division CN114102269B (zh) 2015-05-29 2016-05-26 用于处理具有多晶磨光的半导体晶片的方法

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CN107851579A CN107851579A (zh) 2018-03-27
CN107851579B true CN107851579B (zh) 2021-11-09

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CN202111316707.XA Active CN114102269B (zh) 2015-05-29 2016-05-26 用于处理具有多晶磨光的半导体晶片的方法

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Country Link
US (2) US10699908B2 (https=)
EP (2) EP3576136A1 (https=)
JP (2) JP6613470B2 (https=)
CN (2) CN107851579B (https=)
TW (2) TWI742938B (https=)
WO (1) WO2016196216A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6732382B2 (ja) * 2016-10-12 2020-07-29 株式会社ディスコ 加工装置及び被加工物の加工方法
CN110497303B (zh) * 2018-05-16 2024-06-07 长鑫存储技术有限公司 化学机械研磨制程方法及系统
JP7258443B2 (ja) * 2019-10-02 2023-04-17 株式会社ディスコ ドレッシング工具
US12482662B2 (en) * 2022-02-21 2025-11-25 Globalwafers Co., Ltd. Systems and methods for producing epitaxial wafers
JP7757903B2 (ja) * 2022-08-09 2025-10-22 株式会社Sumco ウェーハの片面研磨方法、ウェーハの製造方法、およびウェーハの片面研磨装置
JP7757902B2 (ja) * 2022-08-09 2025-10-22 株式会社Sumco ウェーハの片面研磨方法、ウェーハの製造方法、およびウェーハの片面研磨装置

Citations (12)

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EP1017090A1 (en) * 1996-09-20 2000-07-05 Speedfam Co., Ltd. Semiconductor wafer polishing device
JP2002200552A (ja) * 2000-10-24 2002-07-16 Ebara Corp ポリッシング装置
US6559040B1 (en) * 1999-10-20 2003-05-06 Taiwan Semiconductor Manufacturing Company Process for polishing the top surface of a polysilicon gate
JP2004014780A (ja) * 2002-06-06 2004-01-15 Renesas Technology Corp 平坦化処理の評価方法および半導体装置の製造方法
JP2004022839A (ja) * 2002-06-17 2004-01-22 Sumitomo Mitsubishi Silicon Corp Ｓｏｉ基板の研磨方法およびその装置
US20060046371A1 (en) * 2004-09-01 2006-03-02 Moon Jae Y Methods of forming gate electrodes in semiconductor devices
JP2008284645A (ja) * 2007-05-17 2008-11-27 Tokyo Seimitsu Co Ltd 研磨装置および研磨方法
JP2009515335A (ja) * 2005-11-04 2009-04-09 チェイル インダストリーズ インコーポレイテッド 多結晶シリコン膜を研磨するための化学機械研磨用スラリー組成物およびその製造方法
JP2010115779A (ja) * 2002-08-06 2010-05-27 Qed Technologies Internatl Inc 磁気レオロジー仕上げにより形成された均一な薄膜
JP2012235045A (ja) * 2011-05-09 2012-11-29 Hitachi Chem Co Ltd シリコン膜用ｃｍｐスラリー
US20120315829A1 (en) * 2011-06-08 2012-12-13 Mutsumi Tanikawa Method and apparatus for conditioning a polishing pad
US20140287653A1 (en) * 2013-02-25 2014-09-25 Ebara Corporation Method of adjusting profile of a polishing member used in a polishing apparatus, and polishing apparatus

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DE10314212B4 (de) * 2002-03-29 2010-06-02 Hoya Corp. Verfahren zur Herstellung eines Maskenrohlings, Verfahren zur Herstellung einer Transfermaske
JP2004047876A (ja) * 2002-07-15 2004-02-12 Tokyo Seimitsu Co Ltd 研磨装置及び研磨方法
JP2004074385A (ja) * 2002-08-09 2004-03-11 Success:Kk 半導体ウエハの製造方法
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JP5390750B2 (ja) * 2007-03-30 2014-01-15 ラムバス・インコーポレーテッド 研磨装置、および研磨パッド再生処理方法
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EP1017090A1 (en) * 1996-09-20 2000-07-05 Speedfam Co., Ltd. Semiconductor wafer polishing device
US6559040B1 (en) * 1999-10-20 2003-05-06 Taiwan Semiconductor Manufacturing Company Process for polishing the top surface of a polysilicon gate
JP2002200552A (ja) * 2000-10-24 2002-07-16 Ebara Corp ポリッシング装置
JP2004014780A (ja) * 2002-06-06 2004-01-15 Renesas Technology Corp 平坦化処理の評価方法および半導体装置の製造方法
JP2004022839A (ja) * 2002-06-17 2004-01-22 Sumitomo Mitsubishi Silicon Corp Ｓｏｉ基板の研磨方法およびその装置
JP2010115779A (ja) * 2002-08-06 2010-05-27 Qed Technologies Internatl Inc 磁気レオロジー仕上げにより形成された均一な薄膜
US20060046371A1 (en) * 2004-09-01 2006-03-02 Moon Jae Y Methods of forming gate electrodes in semiconductor devices
JP2009515335A (ja) * 2005-11-04 2009-04-09 チェイル インダストリーズ インコーポレイテッド 多結晶シリコン膜を研磨するための化学機械研磨用スラリー組成物およびその製造方法
JP2008284645A (ja) * 2007-05-17 2008-11-27 Tokyo Seimitsu Co Ltd 研磨装置および研磨方法
JP2012235045A (ja) * 2011-05-09 2012-11-29 Hitachi Chem Co Ltd シリコン膜用ｃｍｐスラリー
US20120315829A1 (en) * 2011-06-08 2012-12-13 Mutsumi Tanikawa Method and apparatus for conditioning a polishing pad
US20140287653A1 (en) * 2013-02-25 2014-09-25 Ebara Corporation Method of adjusting profile of a polishing member used in a polishing apparatus, and polishing apparatus

Also Published As

Publication number Publication date
JP2020025110A (ja) 2020-02-13
EP3576136A1 (en) 2019-12-04
WO2016196216A8 (en) 2017-12-14
TWI714591B (zh) 2021-01-01
EP3304580B1 (en) 2019-07-10
JP6955537B2 (ja) 2021-10-27
JP6613470B2 (ja) 2019-12-04
CN107851579A (zh) 2018-03-27
TWI742938B (zh) 2021-10-11
CN114102269A (zh) 2022-03-01
TW202113960A (zh) 2021-04-01
TW201705254A (zh) 2017-02-01
JP2018518050A (ja) 2018-07-05
US20180151384A1 (en) 2018-05-31
US11355346B2 (en) 2022-06-07
US10699908B2 (en) 2020-06-30
CN114102269B (zh) 2024-09-24
EP3304580A1 (en) 2018-04-11
US20200312671A1 (en) 2020-10-01
WO2016196216A1 (en) 2016-12-08

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