JP6613020B2 - カルバメート成分を含むフォトレジスト - Google Patents

カルバメート成分を含むフォトレジスト Download PDF

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Publication number
JP6613020B2
JP6613020B2 JP2014110877A JP2014110877A JP6613020B2 JP 6613020 B2 JP6613020 B2 JP 6613020B2 JP 2014110877 A JP2014110877 A JP 2014110877A JP 2014110877 A JP2014110877 A JP 2014110877A JP 6613020 B2 JP6613020 B2 JP 6613020B2
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Japan
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optionally
photoresist
group
alkyl
optionally substituted
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JP2014110877A
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English (en)
Japanese (ja)
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JP2014235432A5 (enExample
JP2014235432A (ja
Inventor
ウィリアム・ウィリアムズ・サード
コン・リュー
チェン−バイ・スー
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DuPont Electronic Materials International LLC
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Rohm and Haas Electronic Materials LLC
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Publication of JP2014235432A5 publication Critical patent/JP2014235432A5/ja
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C269/00—Preparation of derivatives of carbamic acid, i.e. compounds containing any of the groups, the nitrogen atom not being part of nitro or nitroso groups
    • C07C269/04—Preparation of derivatives of carbamic acid, i.e. compounds containing any of the groups, the nitrogen atom not being part of nitro or nitroso groups from amines with formation of carbamate groups
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C271/00—Derivatives of carbamic acids, i.e. compounds containing any of the groups, the nitrogen atom not being part of nitro or nitroso groups
    • C07C271/06—Esters of carbamic acids
    • C07C271/08—Esters of carbamic acids having oxygen atoms of carbamate groups bound to acyclic carbon atoms
    • C07C271/24—Esters of carbamic acids having oxygen atoms of carbamate groups bound to acyclic carbon atoms with the nitrogen atom of at least one of the carbamate groups bound to a carbon atom of a ring other than a six-membered aromatic ring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
JP2014110877A 2013-05-31 2014-05-29 カルバメート成分を含むフォトレジスト Active JP6613020B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/907,789 US10539870B2 (en) 2013-05-31 2013-05-31 Photoresists comprising carbamate component
US13/907,789 2013-05-31

Publications (3)

Publication Number Publication Date
JP2014235432A JP2014235432A (ja) 2014-12-15
JP2014235432A5 JP2014235432A5 (enExample) 2018-07-26
JP6613020B2 true JP6613020B2 (ja) 2019-11-27

Family

ID=51985485

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014110877A Active JP6613020B2 (ja) 2013-05-31 2014-05-29 カルバメート成分を含むフォトレジスト

Country Status (5)

Country Link
US (1) US10539870B2 (enExample)
JP (1) JP6613020B2 (enExample)
KR (1) KR102262814B1 (enExample)
CN (1) CN104216224B (enExample)
TW (1) TWI533091B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5203575B2 (ja) 2005-05-04 2013-06-05 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． コーティング組成物
US9256125B2 (en) 2013-03-30 2016-02-09 Rohm And Haas Electronic Materials, Llc Acid generators and photoresists comprising same
TWI636326B (zh) * 2015-05-15 2018-09-21 南韓商羅門哈斯電子材料韓國公司 光鹼產生劑及包括其的光致抗蝕劑組成物
JP2017019997A (ja) * 2015-06-01 2017-01-26 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 酸発生剤化合物及びそれを含むフォトレジスト
TWI672562B (zh) * 2015-09-30 2019-09-21 南韓商羅門哈斯電子材料韓國公司 光致抗蝕劑組合物及方法
TWI643916B (zh) * 2015-09-30 2018-12-11 羅門哈斯電子材料韓國公司 用於光微影之罩面層組合物及方法
TWI646397B (zh) * 2015-10-31 2019-01-01 南韓商羅門哈斯電子材料韓國公司 與外塗佈光致抗蝕劑一起使用的塗料組合物
WO2017176282A1 (en) 2016-04-08 2017-10-12 Intel Corporation Two-stage bake photoresist with releasable quencher
JP6957989B2 (ja) * 2016-06-30 2021-11-02 住友化学株式会社 レジスト組成物
CN109690405B (zh) * 2016-09-15 2022-10-04 日产化学株式会社 抗蚀剂下层膜形成用组合物
CA3127990A1 (en) 2018-01-30 2019-08-08 Board Of Regents, The University Of Texas System Pipecolic esters for inhibition of the proteasome
JP7283372B2 (ja) * 2019-01-25 2023-05-30 信越化学工業株式会社 化学増幅レジスト材料及びパターン形成方法
JP7268615B2 (ja) * 2019-02-27 2023-05-08 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP7344956B2 (ja) * 2019-03-29 2023-09-14 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、及び電子デバイスの製造方法
JP7542343B2 (ja) * 2020-07-07 2024-08-30 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
JP2024059081A (ja) * 2022-10-17 2024-04-30 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
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EP0537524A1 (en) 1991-10-17 1993-04-21 Shipley Company Inc. Radiation sensitive compositions and methods
US6486058B1 (en) 2000-10-04 2002-11-26 Integrated Device Technology, Inc. Method of forming a photoresist pattern using WASOOM
US7379548B2 (en) 2003-01-31 2008-05-27 Nds Limited Virtual smart card device, method and system
KR101796318B1 (ko) * 2009-07-31 2017-11-09 제이에스알 가부시끼가이샤 감방사선성 수지 조성물 및 그것에 이용되는 화합물
JP2011057663A (ja) 2009-08-11 2011-03-24 Sumitomo Chemical Co Ltd 化合物及びフォトレジスト組成物
US20110065047A1 (en) * 2009-09-16 2011-03-17 Sumitomo Chemichal Company, Limited Photoresist composition
JP2012073279A (ja) 2009-09-16 2012-04-12 Sumitomo Chemical Co Ltd レジスト組成物
JP5703646B2 (ja) 2009-09-16 2015-04-22 住友化学株式会社 レジスト組成物
TW201120575A (en) * 2009-09-16 2011-06-16 Sumitomo Chemical Co Photoresist composition
JP5573578B2 (ja) * 2009-10-16 2014-08-20 信越化学工業株式会社 パターン形成方法及びレジスト材料
US8927190B2 (en) 2010-01-25 2015-01-06 Rohm And Haas Electronic Materials Llc Photoresist comprising nitrogen-containing compound
JP2011197067A (ja) * 2010-03-17 2011-10-06 Sumitomo Chemical Co Ltd レジスト組成物及びレジストパターンの製造方法
FR2960875B1 (fr) * 2010-06-04 2012-12-28 Sanofi Aventis Derives de carbamates d'hexafluoroisopropyle, leur preparation et leur application en therapeutique
JP5621735B2 (ja) 2010-09-03 2014-11-12 信越化学工業株式会社 パターン形成方法及び化学増幅ポジ型レジスト材料
JP2012073612A (ja) 2010-09-14 2012-04-12 Rohm & Haas Electronic Materials Llc マルチアミド成分を含むフォトレジスト
US8394573B2 (en) * 2010-09-16 2013-03-12 International Business Machines Corporation Photoresist compositions and methods for shrinking a photoresist critical dimension
JP2012092328A (ja) * 2010-09-30 2012-05-17 Dainippon Printing Co Ltd 塩基発生剤、感光性樹脂組成物、当該感光性樹脂組成物からなるパターン形成用材料、当該感光性樹脂組成物を用いたレリーフパターンの製造方法並びに物品
JP5617799B2 (ja) * 2010-12-07 2014-11-05 信越化学工業株式会社 化学増幅レジスト材料及びパターン形成方法
JP5440515B2 (ja) * 2011-01-14 2014-03-12 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP5836230B2 (ja) * 2011-09-15 2015-12-24 富士フイルム株式会社 パターン形成方法、感電子線性又は感極紫外線性樹脂組成物、及び、レジスト膜、並びに、これらを用いた電子デバイスの製造方法
JP5910109B2 (ja) * 2012-01-26 2016-04-27 住友ベークライト株式会社 ポジ型感光性樹脂組成物、硬化膜、保護膜、絶縁膜、半導体装置、および表示体装置
JP5593357B2 (ja) * 2012-09-18 2014-09-24 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法

Also Published As

Publication number Publication date
CN104216224B (zh) 2020-03-24
CN104216224A (zh) 2014-12-17
US10539870B2 (en) 2020-01-21
US20140356785A1 (en) 2014-12-04
TWI533091B (zh) 2016-05-11
JP2014235432A (ja) 2014-12-15
KR20140141518A (ko) 2014-12-10
KR102262814B1 (ko) 2021-06-08
TW201502707A (zh) 2015-01-16

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