JP6609917B2 - 蛍光光源用発光素子の製造方法 - Google Patents

蛍光光源用発光素子の製造方法 Download PDF

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Publication number
JP6609917B2
JP6609917B2 JP2014244340A JP2014244340A JP6609917B2 JP 6609917 B2 JP6609917 B2 JP 6609917B2 JP 2014244340 A JP2014244340 A JP 2014244340A JP 2014244340 A JP2014244340 A JP 2014244340A JP 6609917 B2 JP6609917 B2 JP 6609917B2
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Japan
Prior art keywords
interference
material layer
light
fluorescent
pattern
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JP2014244340A
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English (en)
Japanese (ja)
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JP2016111057A5 (enExample
JP2016111057A (ja
Inventor
大輔 矢島
和之 鶴岡
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Ushio Denki KK
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Ushio Denki KK
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Priority to JP2014244340A priority Critical patent/JP6609917B2/ja
Priority to US14/953,740 priority patent/US9494296B2/en
Publication of JP2016111057A publication Critical patent/JP2016111057A/ja
Publication of JP2016111057A5 publication Critical patent/JP2016111057A5/ja
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/30—Elements containing photoluminescent material distinct from or spaced from the light source
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/008—Surface plasmon devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/201—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by an oblique exposure; characterised by the use of plural sources; characterised by the rotation of the optical device; characterised by a relative movement of the optical device, the light source, the sensitive system or the mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70408—Interferometric lithography; Holographic lithography; Self-imaging lithography, e.g. utilizing the Talbot effect
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/30—Semiconductor lasers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • General Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Led Device Packages (AREA)
JP2014244340A 2014-12-02 2014-12-02 蛍光光源用発光素子の製造方法 Active JP6609917B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014244340A JP6609917B2 (ja) 2014-12-02 2014-12-02 蛍光光源用発光素子の製造方法
US14/953,740 US9494296B2 (en) 2014-12-02 2015-11-30 Method of manufacturing light emitting element of fluorescent light source forming highly precise photonic structure in fluorescence emitting surface of light emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014244340A JP6609917B2 (ja) 2014-12-02 2014-12-02 蛍光光源用発光素子の製造方法

Publications (3)

Publication Number Publication Date
JP2016111057A JP2016111057A (ja) 2016-06-20
JP2016111057A5 JP2016111057A5 (enExample) 2016-08-12
JP6609917B2 true JP6609917B2 (ja) 2019-11-27

Family

ID=56078939

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014244340A Active JP6609917B2 (ja) 2014-12-02 2014-12-02 蛍光光源用発光素子の製造方法

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US (1) US9494296B2 (enExample)
JP (1) JP6609917B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017054006A (ja) * 2015-09-09 2017-03-16 ウシオ電機株式会社 光照射方法、基板上構造体の製造方法および基板上構造体
GB2548706B (en) * 2016-02-24 2019-12-11 Nichia Corp Method of manufacturing fluorescent-material-containing member
US11669012B2 (en) * 2020-02-21 2023-06-06 Applied Materials, Inc. Maskless lithography method to fabricate topographic substrate
US11933462B2 (en) * 2020-07-07 2024-03-19 Signify Holding B.V. Laser phosphor based pixelated light source

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07106237A (ja) * 1993-09-29 1995-04-21 Sony Corp 半導体装置の製造方法
JPH10261571A (ja) * 1997-03-19 1998-09-29 Hitachi Ltd パターン形成方法
JP2000056476A (ja) * 1998-08-06 2000-02-25 Oki Electric Ind Co Ltd レジストパターン形成方法
JP2000315785A (ja) * 1999-04-30 2000-11-14 Canon Inc ナノ構造体の製造方法及びナノ構造体デバイス
US8110345B2 (en) * 2002-12-04 2012-02-07 Taiwan Semiconductor Manufacturing Company, Ltd. High resolution lithography system and method
CN100422269C (zh) * 2003-03-26 2008-10-01 株式会社半导体能源研究所 有机-无机混合材料、用于合成上述有机-无机混合材料的组合物以及上述有机-无机混合材料的制备方法
TWI246783B (en) * 2003-09-24 2006-01-01 Matsushita Electric Works Ltd Light-emitting device and its manufacturing method
US7943947B2 (en) * 2004-07-24 2011-05-17 Young Rag Do LED device comprising thin-film phosphor having two dimensional nano periodic structures
JP4389791B2 (ja) * 2004-08-25 2009-12-24 セイコーエプソン株式会社 微細構造体の製造方法および露光装置
US7718326B2 (en) * 2005-06-17 2010-05-18 Vincent E Stenger Seamless stitching of patterns formed by interference lithography
DE102007001903A1 (de) * 2006-11-17 2008-05-21 Merck Patent Gmbh Leuchtstoffkörper enthaltend Rubin für weiße oder Color-on-demand LEDs
NL1036349A1 (nl) * 2007-12-28 2009-06-30 Asml Holding Nv Scanning EUV interference imaging for extremely high resolution patterning.
DE102010005169A1 (de) * 2009-12-21 2011-06-22 OSRAM Opto Semiconductors GmbH, 93055 Strahlungsemittierendes Halbleiterbauelement
US20110216550A1 (en) 2010-03-02 2011-09-08 Teruo Koike Vehicle light
JP5510646B2 (ja) 2010-03-18 2014-06-04 スタンレー電気株式会社 車両用灯具
JP2012109400A (ja) * 2010-11-17 2012-06-07 Sharp Corp 発光素子、発光装置および発光素子の製造方法

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JP2016111057A (ja) 2016-06-20
US20160153624A1 (en) 2016-06-02
US9494296B2 (en) 2016-11-15

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