NL1036349A1 - Scanning EUV interference imaging for extremely high resolution patterning. - Google Patents

Scanning EUV interference imaging for extremely high resolution patterning. Download PDF

Info

Publication number
NL1036349A1
NL1036349A1 NL1036349A NL1036349A NL1036349A1 NL 1036349 A1 NL1036349 A1 NL 1036349A1 NL 1036349 A NL1036349 A NL 1036349A NL 1036349 A NL1036349 A NL 1036349A NL 1036349 A1 NL1036349 A1 NL 1036349A1
Authority
NL
Netherlands
Prior art keywords
high resolution
extremely high
interference imaging
resolution patterning
scanning
Prior art date
Application number
NL1036349A
Other languages
English (en)
Inventor
Harry Sewell
Original Assignee
Asml Holding Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Holding Nv filed Critical Asml Holding Nv
Publication of NL1036349A1 publication Critical patent/NL1036349A1/nl

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G03F7/70266—Adaptive optics, e.g. deformable optical elements for wavefront control, e.g. for aberration adjustment or correction
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70408—Interferometric lithography; Holographic lithography; Self-imaging lithography, e.g. utilizing the Talbot effect
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G03F7/2006—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light using coherent light; using polarised light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
NL1036349A 2007-12-28 2008-12-22 Scanning EUV interference imaging for extremely high resolution patterning. NL1036349A1 (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US618507P 2007-12-28 2007-12-28

Publications (1)

Publication Number Publication Date
NL1036349A1 true NL1036349A1 (nl) 2009-06-30

Family

ID=40549356

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1036349A NL1036349A1 (nl) 2007-12-28 2008-12-22 Scanning EUV interference imaging for extremely high resolution patterning.

Country Status (7)

Country Link
US (1) US8623588B2 (nl)
JP (1) JP5351900B2 (nl)
KR (1) KR101541395B1 (nl)
CN (1) CN101910951B (nl)
NL (1) NL1036349A1 (nl)
TW (1) TWI436169B (nl)
WO (1) WO2009083229A1 (nl)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2545406B1 (en) * 2010-03-09 2015-02-11 SI-Ware Systems A technique to determine mirror position in optical interferometers
CN102141736A (zh) * 2011-01-05 2011-08-03 中国科学院半导体研究所 紫外激光干涉条纹的辅助检测装置及方法
JP2013145863A (ja) * 2011-11-29 2013-07-25 Gigaphoton Inc ２光束干渉装置および２光束干渉露光システム
US9476764B2 (en) 2013-09-10 2016-10-25 Taiwan Semiconductor Manufacturing Co., Ltd. Wavefront adjustment in extreme ultra-violet (EUV) lithography
US9405204B2 (en) 2013-09-18 2016-08-02 Taiwan Semiconductor Manufacturing Co., Ltd. Method of overlay in extreme ultra-violet (EUV) lithography
US9034665B2 (en) * 2013-10-11 2015-05-19 Taiwan Semiconductor Manufacturing Co., Ltd. Tool configuration and method for extreme ultra-violet (EUV) patterning with a deformable reflective surface
JP6221849B2 (ja) * 2014-03-07 2017-11-01 ウシオ電機株式会社 露光方法、微細周期構造体の製造方法、グリッド偏光素子の製造方法及び露光装置
WO2016018004A1 (en) * 2014-07-31 2016-02-04 Samsung Electronics Co., Ltd. Method, apparatus, and system for providing translated content
JP6609917B2 (ja) * 2014-12-02 2019-11-27 ウシオ電機株式会社 蛍光光源用発光素子の製造方法
JP2016111058A (ja) * 2014-12-02 2016-06-20 ウシオ電機株式会社 半導体発光素子の製造方法及び半導体発光素子
US10101652B2 (en) * 2015-09-24 2018-10-16 Ushio Denki Kabushiki Kaisha Exposure method, method of fabricating periodic microstructure, method of fabricating grid polarizing element and exposure apparatus
TWI561939B (en) * 2015-11-03 2016-12-11 Univ Nat Sun Yat Sen Interference lithography device
JP2019514078A (ja) * 2016-03-10 2019-05-30 ヴィズビット インコーポレイテッド 時間多重化プログラム可能な視野撮像
WO2017153085A1 (en) 2016-03-10 2017-09-14 Asml Netherlands B.V. Measurement system, lithographic apparatus and device manufacturing method
US11067900B2 (en) 2016-05-19 2021-07-20 Nikon Corporation Dense line extreme ultraviolet lithography system with distortion matching
US10712671B2 (en) 2016-05-19 2020-07-14 Nikon Corporation Dense line extreme ultraviolet lithography system with distortion matching
US10295911B2 (en) 2016-05-19 2019-05-21 Nikon Corporation Extreme ultraviolet lithography system that utilizes pattern stitching
US11099483B2 (en) * 2016-05-19 2021-08-24 Nikon Corporation Euv lithography system for dense line patterning
JP2019518246A (ja) * 2016-06-20 2019-06-27 株式会社ニコン 歪み整合のための密集ライン極紫外線リソグラフィシステム
US10481408B2 (en) * 2016-09-30 2019-11-19 Christie Digital Systems (Usa), Inc. Apparatus for reducing coherence of a laser beam
US10527956B2 (en) 2017-03-24 2020-01-07 Nikon Corporation Temperature controlled heat transfer frame for pellicle
KR102140675B1 (ko) * 2018-05-08 2020-08-05 한국생산기술연구원 광간섭을 이용한 준결정 표면 격자 패턴 형성방법 및 이로 형성된 준결정 표면 격자 패턴
KR20210068890A (ko) 2019-12-02 2021-06-10 삼성전자주식회사 Cdi 기반 검사 장치 및 방법
CN111354500B (zh) * 2020-03-16 2022-03-22 中国科学院高能物理研究所 一种同步辐射x射线双反射镜
CA3183829A1 (en) * 2021-03-19 2022-09-22 Hongji Ren Performing structured illumination microscopy on a patterned substrate

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4596467A (en) * 1984-03-16 1986-06-24 Hughes Aircraft Company Dissimilar superimposed grating precision alignment and gap measurement systems
JP3115389B2 (ja) 1991-12-25 2000-12-04 沖電気工業株式会社 位相差露光法
JPH06204124A (ja) * 1993-01-06 1994-07-22 Nippon Telegr & Teleph Corp <Ntt> 軟ｘ線像露光法
JPH06300909A (ja) * 1993-04-13 1994-10-28 Canon Inc ホログラフィック干渉露光法を用いた回折格子作成方法及びこれを用いた光半導体装置
JPH11354014A (ja) * 1998-06-08 1999-12-24 Ricoh Co Ltd 電界放射型電子源の作製方法
JP2000223400A (ja) 1999-02-01 2000-08-11 Canon Inc パターン形成方法及びそれを用いた露光装置
US6882477B1 (en) * 1999-11-10 2005-04-19 Massachusetts Institute Of Technology Method and system for interference lithography utilizing phase-locked scanning beams
JP4514317B2 (ja) * 2000-11-27 2010-07-28 株式会社ミツトヨ 露光装置
JP2004014866A (ja) * 2002-06-07 2004-01-15 Nikon Corp 多光子干渉露光装置
US6766671B2 (en) * 2002-07-19 2004-07-27 Master Lock Company Shackleless lock
JP2004343082A (ja) * 2003-04-17 2004-12-02 Asml Netherlands Bv 凹面および凸面を含む集光器を備えたリトグラフ投影装置
US20050073671A1 (en) * 2003-10-07 2005-04-07 Intel Corporation Composite optical lithography method for patterning lines of substantially equal width
CN100480863C (zh) * 2004-08-25 2009-04-22 精工爱普生株式会社 微细结构体的制造方法、曝光装置、电子仪器
US7492442B2 (en) * 2004-08-27 2009-02-17 Asml Holding N.V. Adjustable resolution interferometric lithography system
US7184124B2 (en) * 2004-10-28 2007-02-27 Asml Holding N.V. Lithographic apparatus having an adjustable projection system and device manufacturing method
US20060109532A1 (en) * 2004-11-19 2006-05-25 Savas Timothy A System and method for forming well-defined periodic patterns using achromatic interference lithography
US7751030B2 (en) * 2005-02-01 2010-07-06 Asml Holding N.V. Interferometric lithographic projection apparatus
US20070153249A1 (en) * 2005-12-20 2007-07-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method using multiple exposures and multiple exposure types
US7440078B2 (en) * 2005-12-20 2008-10-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method using interferometric and maskless exposure units
US7561252B2 (en) * 2005-12-29 2009-07-14 Asml Holding N.V. Interferometric lithography system and method used to generate equal path lengths of interfering beams
US8264667B2 (en) * 2006-05-04 2012-09-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method using interferometric and other exposure
US8934084B2 (en) * 2006-05-31 2015-01-13 Asml Holding N.V. System and method for printing interference patterns having a pitch in a lithography system
US7768627B2 (en) * 2007-06-14 2010-08-03 Asml Netherlands B.V. Illumination of a patterning device based on interference for use in a maskless lithography system

Also Published As

Publication number Publication date
WO2009083229A1 (en) 2009-07-09
TWI436169B (zh) 2014-05-01
US20100284015A1 (en) 2010-11-11
KR20100112599A (ko) 2010-10-19
JP5351900B2 (ja) 2013-11-27
TW200935191A (en) 2009-08-16
US8623588B2 (en) 2014-01-07
KR101541395B1 (ko) 2015-08-03
CN101910951A (zh) 2010-12-08
JP2011508443A (ja) 2011-03-10
CN101910951B (zh) 2013-09-18

Similar Documents

Publication Publication Date Title
NL1036349A1 (nl) Scanning EUV interference imaging for extremely high resolution patterning.
HK1243612A1 (zh) 用於成像探頭的掃描機構
GB2439778B (en) Compact high resolution imaging apparatus
DE602006003782D1 (de) Bilderzeugungsgerät
DE602006001410D1 (de) Bilderzeugungsgerät
FI20065267A (fi) Järjestely dentaalikuvausta varten
DE602007001639D1 (de) Bilderzeugungssystem
DE602006019943D1 (de) Bilderzeugungsgerät
DE602006011416D1 (de) Bilderzeugungsvorrichtung
DE602007002722D1 (de) Bilderzeugungsvorrichtung
DE602007003895D1 (de) Bilderzeugungsvorrichtung mit Verriegelungsmitteln
GB2453247B (en) Imaging system having enhanced resolution
DE602006005997D1 (de) Bildgenerator
DE602006016536D1 (de) Bildaufnahmegerät
DE112007000818A5 (de) Durchstrahlungsscanner
DE602006020251D1 (de) Röntgenabbildungseinrichtung
DE602006019338D1 (de) Bilderzeugungsgerät
DE602007005749D1 (de) Bilderzeugungsgerät
DE602006019185D1 (de) Bilderzeugungsvorrichtung
EP1856546A4 (en) VISUALIZATION OF HIGH RESOLUTION DIFFUSION DATA BY PROJECTION WITH MAXIMUM COHERENCE
DE602005016374D1 (de) Bildsensor
DE602006000911D1 (de) Bilderzeugungsvorrichtung
DE602006017289D1 (de) Bilderzeugungsgerät
DE602006006130D1 (de) Bildaufnahmevorrichtung
BRPI0920900A2 (pt) dispositivo de aquisição de imagens multifunção.

Legal Events

Date Code Title Description
AD1A A request for search or an international type search has been filed