JP6609231B2 - 基板処理装置および半導体装置の製造方法 - Google Patents
基板処理装置および半導体装置の製造方法 Download PDFInfo
- Publication number
- JP6609231B2 JP6609231B2 JP2016182163A JP2016182163A JP6609231B2 JP 6609231 B2 JP6609231 B2 JP 6609231B2 JP 2016182163 A JP2016182163 A JP 2016182163A JP 2016182163 A JP2016182163 A JP 2016182163A JP 6609231 B2 JP6609231 B2 JP 6609231B2
- Authority
- JP
- Japan
- Prior art keywords
- bubbles
- bubble
- substrate processing
- liquid
- processing apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
- H01L21/67265—Position monitoring, e.g. misposition detection or presence detection of substrates stored in a container, a magazine, a carrier, a boat or the like
Description
図1は、第1実施形態に係る基板処理装置の構成を概略的に示す模式図である。本実施形態に係る基板処理装置1は、例えば、ウェハ状の複数の基板20を液体30で同時にエッチング処理するウェットエッチング処理装置である。基板20は、例えば、ワードラインを積層した3次元メモリに用いられる。
図3は、第2実施形態に係る基板処理装置の構成を概略的に示す模式図である。図3では、第1実施形態と同様の構成要素については同じ符号を付し、詳細な説明は省略する。
Claims (7)
- 複数の基板を収容可能で、かつ、前記複数の基板をエッチング処理する液体を貯留可能な容器と、
前記複数の基板のそれぞれに対応して設けられ、前記液体内に気泡を発生させる複数の気泡発生器と、
前記複数の気泡発生器の前記気泡の発生状態を測定する測定器と、
前記測定器の測定結果に基づいて、前記複数の気泡発生器を個別に制御する制御機器と、
を備える基板処理装置。 - 前記測定器は、各気泡発生器からの前記気泡の移動経路に向けて光を放出する複数の発光部と、前記移動経路を挟んで前記複数の発光部と個別に対向する複数の受光部と、を含み、
前記制御機器は、各受光部の受光強度に基づいて前記複数の気泡発生器を制御する、請求項1に記載の基板処理装置。 - 前記制御機器は、前記受光強度と予め設定されたしきい値とを比較し、その比較結果に基づいて各気泡発生器の前記気泡の発生量を調整する、請求項2に記載の基板処理装置。
- 前記測定器は、前記液体の液面を撮像する撮像機器を含み、
前記制御機器は、前記撮像機器の撮像画像と基準画像とを比較し、その比較結果に基づいて各気泡発生器の前記気泡の発生量を調整する、請求項1に記載の基板処理装置。 - 各気泡発生器は、前記容器の底部に設置され、前記容器の上部に向けて前記気泡を吐出するノズルと、前記ノズルに連通する配管と、前記配管内を流れる気体の流量を調整する流量調整部と、を含み、
前記制御機器は、前記測定器の測定結果に基づいて前記流量調整部を制御する、請求項1から4のいずれかに記載の基板処理装置。 - 前記液体がリン酸を含む、請求項1から5のいずれかに記載の基板処理装置。
- 液体が貯留された容器内に複数の基板を収容して前記複数の基板に対してエッチング処理を行い、
前記複数の基板のそれぞれに対応して設けられた複数の気泡発生器を用いて前記液体内に気泡を発生させ、
前記複数の気泡発生器の前記気泡の発生状態を測定し、
前記気泡の発生状態の測定結果に基づいて、前記複数の気泡発生器を個別に制御する、半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016182163A JP6609231B2 (ja) | 2016-09-16 | 2016-09-16 | 基板処理装置および半導体装置の製造方法 |
US15/446,966 US10109508B2 (en) | 2016-09-16 | 2017-03-01 | Substrate processing device and method of manufacturing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016182163A JP6609231B2 (ja) | 2016-09-16 | 2016-09-16 | 基板処理装置および半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018046262A JP2018046262A (ja) | 2018-03-22 |
JP6609231B2 true JP6609231B2 (ja) | 2019-11-20 |
Family
ID=61617502
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016182163A Active JP6609231B2 (ja) | 2016-09-16 | 2016-09-16 | 基板処理装置および半導体装置の製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US10109508B2 (ja) |
JP (1) | JP6609231B2 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6985957B2 (ja) | 2018-02-21 | 2021-12-22 | キオクシア株式会社 | 半導体処理装置 |
JP7116694B2 (ja) | 2019-02-21 | 2022-08-10 | キオクシア株式会社 | 基板処理装置 |
JP2020141006A (ja) | 2019-02-27 | 2020-09-03 | キオクシア株式会社 | 基板処理装置および半導体装置の製造方法 |
US11168978B2 (en) | 2020-01-06 | 2021-11-09 | Tokyo Electron Limited | Hardware improvements and methods for the analysis of a spinning reflective substrates |
JP7381370B2 (ja) | 2020-03-05 | 2023-11-15 | キオクシア株式会社 | 半導体製造装置および半導体装置の製造方法 |
KR102546933B1 (ko) * | 2020-04-09 | 2023-06-26 | 삼성전자주식회사 | 기포발생장치 및 그것을 포함하는 시스템 |
JP2022026660A (ja) * | 2020-07-31 | 2022-02-10 | 株式会社Screenホールディングス | 基板処理装置及び基板処理方法 |
JP2022073306A (ja) * | 2020-10-30 | 2022-05-17 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
WO2022210131A1 (ja) * | 2021-04-01 | 2022-10-06 | 東京エレクトロン株式会社 | 基板液処理装置 |
US11738363B2 (en) | 2021-06-07 | 2023-08-29 | Tokyo Electron Limited | Bath systems and methods thereof |
US20220405902A1 (en) * | 2021-06-16 | 2022-12-22 | Tokyo Electron Limited | Wafer bath imaging |
US20230243059A1 (en) * | 2022-01-31 | 2023-08-03 | Applied Materials, Inc. | Wafer immersion in semiconductor processing chambers |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5162672A (en) * | 1974-11-28 | 1976-05-31 | Fujitsu Ltd | Handotaisochino seizohoho |
US5520205A (en) * | 1994-07-01 | 1996-05-28 | Texas Instruments Incorporated | Apparatus for wafer cleaning with rotation |
KR100265556B1 (ko) * | 1997-03-21 | 2000-11-01 | 구본준 | 식각장치 |
JP3798201B2 (ja) | 1999-10-26 | 2006-07-19 | 大日本スクリーン製造株式会社 | 基板処理装置 |
JP3376985B2 (ja) | 2000-02-25 | 2003-02-17 | 日本電気株式会社 | ウェット処理装置 |
KR100481176B1 (ko) * | 2002-08-20 | 2005-04-07 | 삼성전자주식회사 | 기포검출장치가 장착된 웨트 크리닝 설비 |
JP3844462B2 (ja) | 2002-10-23 | 2006-11-15 | 大日本スクリーン製造株式会社 | 基板処理装置 |
JP3844463B2 (ja) | 2002-10-28 | 2006-11-15 | 大日本スクリーン製造株式会社 | 基板処理装置 |
JP4351981B2 (ja) | 2004-09-17 | 2009-10-28 | セイコーエプソン株式会社 | 半導体基板の洗浄方法及びその装置 |
JP2006339598A (ja) * | 2005-06-06 | 2006-12-14 | Renesas Technology Corp | 半導体基板の洗浄装置 |
KR101244896B1 (ko) * | 2006-06-05 | 2013-03-19 | 삼성디스플레이 주식회사 | 기판 식각장치 |
JP5213638B2 (ja) * | 2008-10-24 | 2013-06-19 | 新電元工業株式会社 | ウェットエッチング方法 |
JP5894858B2 (ja) * | 2012-05-24 | 2016-03-30 | ジルトロニック アクチエンゲゼルシャフトSiltronic AG | 超音波洗浄方法 |
JP6032623B2 (ja) * | 2012-07-31 | 2016-11-30 | パナソニックIpマネジメント株式会社 | 太陽電池の製造方法 |
US9562291B2 (en) * | 2014-01-14 | 2017-02-07 | Mei, Llc | Metal etch system |
-
2016
- 2016-09-16 JP JP2016182163A patent/JP6609231B2/ja active Active
-
2017
- 2017-03-01 US US15/446,966 patent/US10109508B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US10109508B2 (en) | 2018-10-23 |
JP2018046262A (ja) | 2018-03-22 |
US20180082862A1 (en) | 2018-03-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6609231B2 (ja) | 基板処理装置および半導体装置の製造方法 | |
US8575571B2 (en) | Cleaning apparatus, measurement method and calibration method | |
JP6645900B2 (ja) | 基板処理装置および基板処理方法 | |
US20160217997A1 (en) | Substrate processing device, recordng medium, and control method | |
JP2020021822A (ja) | 基板処理装置および半導体装置の製造方法 | |
US20160271845A1 (en) | Imprint system and method of manufacturing article | |
US11062922B2 (en) | Substrate liquid processing apparatus | |
US20150079701A1 (en) | Semiconductor device manufacturing method and manufacturing apparatus | |
KR102092018B1 (ko) | 잉크젯 인쇄장치 및 그를 이용한 잉크젯 인쇄방법 | |
JP7019430B2 (ja) | 基板液処理装置 | |
JP6547871B2 (ja) | 基板処理装置及び基板処理方法 | |
WO2019198646A1 (ja) | 基板処理方法及び基板処理装置 | |
US9360303B2 (en) | Height measuring apparatus and method thereof | |
JP6253269B2 (ja) | リソグラフィ装置、リソグラフィ方法、それを用いた物品の製造方法 | |
WO2016010673A1 (en) | Calibration of photoelectromagnetic sensor in a laser source | |
JP6319114B2 (ja) | 液処理方法、液処理装置及び記憶媒体 | |
KR101922272B1 (ko) | 액처리 장치, 액처리 방법, 측정용 지그 | |
JP2016115850A (ja) | リソグラフィ装置および方法ならびに物品の製造方法 | |
US20210066076A1 (en) | Semiconductor manufacturing apparatus and manufacturing method of semiconductor device | |
JP2015087112A (ja) | 薬液温度計測装置 | |
US11654460B2 (en) | Megasonic clean with cavity property monitoring | |
US20240071794A1 (en) | Substrate processing apparatus and substrate processing method | |
JP2015185714A (ja) | プラズマ処理装置及びプラズマ処理方法 | |
US20240068109A1 (en) | Substrate processing apparatus and substrate processing method | |
JP2016058722A (ja) | 熱処理方法及び熱処理装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20170602 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20180904 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20181004 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190604 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190531 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190704 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190927 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20191025 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6609231 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |