JP2018046262A - 基板処理装置および半導体装置の製造方法 - Google Patents
基板処理装置および半導体装置の製造方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 62
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000004065 semiconductor Substances 0.000 title claims description 6
- 239000007788 liquid Substances 0.000 claims abstract description 51
- 238000005530 etching Methods 0.000 claims abstract description 10
- 238000005259 measurement Methods 0.000 claims abstract description 6
- 238000003384 imaging method Methods 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 13
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 8
- 239000000126 substance Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- -1 for example Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
- H01L21/67265—Position monitoring, e.g. misposition detection or presence detection of substrates stored in a container, a magazine, a carrier, a boat or the like
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
図1は、第1実施形態に係る基板処理装置の構成を概略的に示す模式図である。本実施形態に係る基板処理装置1は、例えば、ウェハ状の複数の基板20を液体30で同時にエッチング処理するウェットエッチング処理装置である。基板20は、例えば、ワードラインを積層した3次元メモリに用いられる。
図3は、第2実施形態に係る基板処理装置の構成を概略的に示す模式図である。図3では、第1実施形態と同様の構成要素については同じ符号を付し、詳細な説明は省略する。
Claims (7)
- 複数の基板を収容可能で、かつ、前記複数の基板をエッチング処理する液体を貯留可能な容器と、
前記複数の基板のそれぞれに対応して設けられ、前記液体内に気泡を発生させる複数の気泡発生器と、
前記複数の気泡発生器の前記気泡の発生状態を測定する測定器と、
前記測定器の測定結果に基づいて、前記複数の気泡発生器を個別に制御する制御機器と、
を備える基板処理装置。 - 前記測定器は、各気泡発生器からの前記気泡の移動経路に向けて光を放出する複数の発光部と、前記移動経路を挟んで前記複数の発光部と個別に対向する複数の受光部と、を含み、
前記制御機器は、各受光部の受光強度に基づいて前記複数の気泡発生器を制御する、請求項1に記載の基板処理装置。 - 前記制御機器は、前記受光強度と予め設定されたしきい値とを比較し、その比較結果に基づいて各気泡発生器の前記気泡の発生量を調整する、請求項2に記載の基板処理装置。
- 前記測定器は、前記液体の液面を撮像する撮像機器を含み、
前記制御機器は、前記撮像機器の撮像画像と基準画像とを比較し、その比較結果に基づいて各気泡発生器の前記気泡の発生量を調整する、請求項1に基板処理装置。 - 各気泡発生器は、前記容器の底部に設置され、前記容器の上部に向けて前記気泡を吐出するノズルと、前記ノズルに連通する配管と、前記配管内を流れる気体の流量を調整する流量調整部と、を含み、
前記制御機器は、前記測定器の測定結果に基づいて前記流量調整部を制御する、請求項1から4のいずれかに記載の基板処理装置。 - 前記液体がリン酸を含む、請求項1から5のいずれかに記載の基板処理装置。
- 液体が貯留された容器内に複数の基板を収容して前記複数の基板に対してエッチング処理を行い、
前記複数の基板のそれぞれに対応して設けられた複数の気泡発生器を用いて前記液体内に気泡を発生させ、
前記複数の気泡発生器の前記気泡の発生状態を測定し、
前記気泡の発生状態の測定結果に基づいて、前記複数の気泡発生器を個別に制御する、半導体装置の製造方法。
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JP2016182163A JP6609231B2 (ja) | 2016-09-16 | 2016-09-16 | 基板処理装置および半導体装置の製造方法 |
US15/446,966 US10109508B2 (en) | 2016-09-16 | 2017-03-01 | Substrate processing device and method of manufacturing semiconductor device |
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10978316B2 (en) | 2018-02-21 | 2021-04-13 | Toshiba Memory Corporation | Semiconductor processing device |
US11171020B2 (en) | 2019-02-27 | 2021-11-09 | Toshiba Memory Corporation | Substrate treatment apparatus |
WO2022210131A1 (ja) * | 2021-04-01 | 2022-10-06 | 東京エレクトロン株式会社 | 基板液処理装置 |
US11469119B2 (en) | 2019-02-21 | 2022-10-11 | Kioxia Corporation | Substrate treatment apparatus |
WO2022260784A1 (en) * | 2021-06-07 | 2022-12-15 | Tokyo Electron Limited | Bath systems and methods thereof |
WO2022265733A1 (en) * | 2021-06-16 | 2022-12-22 | Tokyo Electron Limited | Wafer bath imaging |
US11610789B2 (en) | 2020-03-05 | 2023-03-21 | Kioxia Corporation | Semiconductor manufacturing apparatus and method of manufacturing semiconductor device |
US11624607B2 (en) | 2020-01-06 | 2023-04-11 | Tokyo Electron Limited | Hardware improvements and methods for the analysis of a spinning reflective substrates |
TWI825502B (zh) * | 2020-10-30 | 2023-12-11 | 日商斯庫林集團股份有限公司 | 基板處理裝置及基板處理方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102546933B1 (ko) * | 2020-04-09 | 2023-06-26 | 삼성전자주식회사 | 기포발생장치 및 그것을 포함하는 시스템 |
JP2022026660A (ja) * | 2020-07-31 | 2022-02-10 | 株式会社Screenホールディングス | 基板処理装置及び基板処理方法 |
US20230243059A1 (en) * | 2022-01-31 | 2023-08-03 | Applied Materials, Inc. | Wafer immersion in semiconductor processing chambers |
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US10978316B2 (en) | 2018-02-21 | 2021-04-13 | Toshiba Memory Corporation | Semiconductor processing device |
US11469119B2 (en) | 2019-02-21 | 2022-10-11 | Kioxia Corporation | Substrate treatment apparatus |
US11171020B2 (en) | 2019-02-27 | 2021-11-09 | Toshiba Memory Corporation | Substrate treatment apparatus |
US11624607B2 (en) | 2020-01-06 | 2023-04-11 | Tokyo Electron Limited | Hardware improvements and methods for the analysis of a spinning reflective substrates |
US11610789B2 (en) | 2020-03-05 | 2023-03-21 | Kioxia Corporation | Semiconductor manufacturing apparatus and method of manufacturing semiconductor device |
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US10109508B2 (en) | 2018-10-23 |
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