US10109508B2 - Substrate processing device and method of manufacturing semiconductor device - Google Patents

Substrate processing device and method of manufacturing semiconductor device Download PDF

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US10109508B2
US10109508B2 US15/446,966 US201715446966A US10109508B2 US 10109508 B2 US10109508 B2 US 10109508B2 US 201715446966 A US201715446966 A US 201715446966A US 10109508 B2 US10109508 B2 US 10109508B2
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bubbles
bubble
flow rate
bath
liquid
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US20180082862A1 (en
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Hiroaki ASHIDATE
Katsuhiro Sato
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Kioxia Corp
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Toshiba Memory Corp
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Assigned to TOSHIBA MEMORY CORPORATION reassignment TOSHIBA MEMORY CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KABUSHIKI KAISHA TOSHIBA
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H01L21/67265—Position monitoring, e.g. misposition detection or presence detection of substrates stored in a container, a magazine, a carrier, a boat or the like

Definitions

  • Embodiments described herein relate generally to a substrate processing device and a method of manufacturing a semiconductor device.
  • multiple substrates may be etched at the same time.
  • the chemical solution may flow on a respective surface of each substrate.
  • an etching amount tends to differ between the substrates.
  • a method of generating bubbles in the chemical solution can be implemented to help make the flow velocity of the chemical solution uniform among substrates.
  • the generation state of bubbles e.g. the rate at which bubbles are being generated
  • the nonuniformity of the flow velocity of the chemical solution may not be eliminated, and the etching amount may still differ among the substrates.
  • a substrate processing device includes a bath configured to accommodate a plurality of substrates and configured to store a liquid for etching the plurality of substrates, a plurality of bubble generators configured to generate bubbles in the liquid, the bubble generators provided so as to correspond to each of the plurality of substrates, a measurement device configured to measure the generation state of the bubbles of at least one of the plurality of bubble generators, and a control device configured to individually control at least one of the plurality of bubble generators based on the measurement result of the measurement device.
  • a method of manufacturing a semiconductor device includes providing a bath in which a liquid is stored, a plurality of substrates, a measurement device, a control device and a plurality of bubble generators, each bubble generator corresponding to one substrate of the plurality of substrates, etching the plurality of substrates, generating bubbles in the liquid by using the plurality of bubble generators, measuring the generation state of the bubbles of at least one bubble generator of the plurality of bubble generators using the measurement device, and controlling, by the control device, at least one bubble generator of the plurality of bubble generators individually based on the measurement result of the bubble generation state.
  • FIG. 1 is a schematic diagram schematically illustrating a configuration of some embodiments of a substrate processing device according to a first aspect.
  • FIG. 2 is a flowchart illustrating some steps of some embodiments of a substrate processing process according to the first aspect.
  • FIG. 3 is a schematic diagram schematically illustrating a configuration of some embodiments of a substrate processing device according to a second aspect.
  • FIG. 4 is a side view of some embodiments of the substrate processing device illustrated in FIG. 3 .
  • FIG. 5A is an enlarged view of a liquid surface illustrated in FIG. 4
  • FIG. 5B is a diagram illustrating an example shape of a liquid surface when bubbles are uniformly generated.
  • FIG. 6 is a flowchart illustrating some steps of some embodiments of a substrate processing process according to the second aspect.
  • Some example embodiments provide for a substrate processing device capable of controlling the generation state of bubbles in a liquid used for substrate processing, and a method of manufacturing such a semiconductor device.
  • a substrate processing device includes a bath, a plurality of bubble generators, a measurement device and a control device (such as a semiconductor device including a central processing unit and associated memory storing executable instructions, and/or an application-specific integrated circuit).
  • the bath is configured to accommodate a plurality of substrates and is configured to store a liquid for etching the plurality of substrates.
  • the plurality of bubble generators are provided and respectively correspond to respective substrates of the plurality of substrates, and generate bubbles in the liquid.
  • the measurement device measures the generation state of bubbles.
  • the control device individually controls the plurality of bubble generators based on one or more measurement results of the measurement device.
  • FIG. 1 is a schematic diagram schematically illustrating a configuration of some embodiments of a substrate processing device according to a first aspect.
  • the depicted embodiments of the substrate processing device 1 according to the first aspect is, for example, a wet etching processing device that simultaneously etches a plurality of wafer-shaped substrates 20 with a liquid 30 .
  • the substrate 20 is used for, for example, a three-dimensional memory in which word lines are stacked.
  • the depicted embodiments of a substrate processing device 1 include a bath 10 , a plurality of bubble generators 12 , a plurality of light emitting units 13 , a plurality of light receiving units 14 and a control device 15 .
  • the liquid 30 is stored in the bath 10 .
  • the liquid 30 is a chemical solution containing phosphoric acid, for example.
  • the bath 10 accommodates a plurality of substrates 20 .
  • Each bubble generator 12 includes a nozzle 121 , a pipe 122 and a flow rate adjustment unit 123 .
  • the nozzle 121 is provided at the bottom of the bath 10 .
  • the nozzle 121 discharges bubbles 40 toward the upper portion of the bath 10 .
  • Each bubble generator may be disposed so as to correspond to a substrate 20 , or to a location at which a substrate 20 may be disposed (e.g. may be proximate to, or disposed under, a substrate 20 or to a location at which a substrate 20 may be disposed).
  • the pipe 122 is connected to the nozzle 121 (e.g. is in liquid communication with the nozzle 121 ). Gas flows in the pipe 122 .
  • Gas flows in the pipe 122 .
  • nitrogen is used for this gas.
  • the flow rate adjustment unit 123 is mounted on the pipe 122 .
  • the flow rate adjustment unit may include, for example, a valve.
  • the flow rate adjustment unit 123 adjusts the flow rate of the gas flowing in the pipe 122 .
  • the flow rate of the gas corresponds to a generation amount of the bubbles 40 . That is, by adjusting the flow rate of the gas with the flow rate adjustment unit 123 , the generation amount (discharge amount) of the bubbles 40 discharged from the nozzle 121 can be adjusted.
  • the plurality of light emitting units 13 and the plurality of light receiving units 14 are part of a measurement device that measures the generation state of the bubbles 40 of the plurality of bubble generators 12 (e.g. the rate at which the plurality of bubble generators 12 generate bubbles).
  • the plurality of light emitting units 13 are provided on an upper surface of the bath 10 (e.g. on an top surface of the bath 10 on the outside of the bath 10 ), and emit light toward a movement path of the bubbles 40 discharged from each nozzle 121 (e.g. emit light in a vertical direction, as shown in FIG. 1 ).
  • Each of the light emitting units 13 includes, for example, a light emitting diode.
  • the plurality of light receiving units 14 are provided on a surface of the bath 10 opposite the surface on which the light emitting units 13 are disposed (e.g. on a bottom surface of the bath 10 on the inside of the bath 10 ) so as to respectively face a respective one of the plurality of light emitting units 13 , with the movement path interposed therebetween.
  • Each light emitting unit 13 may emit light along a respective movement path, and a respective light receiving unit 14 may be positioned at an end of the movement path.
  • Each of the light receiving units 14 includes, for example, a photodiode.
  • Each light receiving unit 14 outputs a detected received light intensity to the control device 15 .
  • the received light intensity may correspond to the generation state of the bubbles 40 . That is, the generation state of the bubbles 40 of each bubble generator 12 can be determined based on the received light intensity of one or more of the light receiving units 14 .
  • the control device 15 controls each flow rate adjustment unit 123 based on the received light intensity of one or more light receiving units 14 .
  • the control device 15 controls each flow rate adjustment unit 123 based on the received light intensity of a single light receiving unit 14 that corresponds to the flow rate adjustment unit 123 .
  • the control device 15 controls each flow rate adjustment unit 123 based on the received light intensity of more than one light receiving unit 14 .
  • the control device 15 controls each flow rate adjustment unit 123 so that the generation amount of the bubbles 40 discharged from each nozzle 121 becomes uniform.
  • FIG. 2 is a flowchart illustrating some steps of the substrate processing process.
  • etching of a plurality of substrates 20 is started (step S 11 ).
  • the plurality of substrates 20 are accommodated in the bath 10 that stores the liquid 30 .
  • a temperature of the liquid 30 is heated to about 160° C., for example.
  • a silicon nitride film (not illustrated) provided on each substrate 20 is selectively etched with respect to a silicon oxide film (not illustrated).
  • a component of the substrate 20 other than a silicon nitride film may be etched by immersion in the liquid 30 .
  • each light receiving unit 14 receives light emitted from at least one respective light emitting unit 13 (step S 12 ).
  • the light received at each light receiving unit 14 may be light emitted from all of the light emitting units 13 of the light substrate processing device 1 .
  • light received by a light receiving unit 14 from a closest light emitting device 13 may correspond to a majority of the total received light, or may contribute more to the total received light than does any other light emitting unit 13 , and the closest light emitting device 13 may be said to correspond to the light receiving unit 14 .
  • Each light receiving unit 14 outputs a respective detected received light intensity to the control device 15 .
  • the received light intensity corresponds to the generation state of the bubbles 40 . That is, reflection or scattering of the light by the bubbles 40 generated by the bubble generators 12 causes a difference between the intensity of the light emitted from each light emitting unit 13 and the intensity of the light detected by each light receiving unit 14 .
  • control device 15 compares the received light intensity acquired from each light receiving unit 14 with a preset threshold value (step S 13 ). By this comparison, the control device 15 can distinguish between the bubble generator 12 generating a large amount of bubbles 40 and the bubble generator 12 generating a small amount of bubbles 40 . That is, the control device 15 can detect the variation in the bubble generation amount of each bubble generator 12 . In some embodiments more than one preset threshold value may be implemented, and the control device 15 can distinguish between more than two bubble generation states.
  • the control device 15 adjusts the generation amount of the bubbles 40 of at least one bubble generator 12 (step S 14 ). For the bubble generator 12 that is determined to generate a small amount of bubbles 40 at step S 13 , the control device 15 increases the flow rate of the gas using the flow rate adjustment unit 123 in order to increase the generation amount of the bubbles 40 .
  • control device 15 reduces the flow rate of the gas using the flow rate adjustment unit 123 in order to reduce the generation amount of the bubbles 40 .
  • the generation state of the bubbles 40 of each bubble generator 12 is measured using the plurality of light emitting units 13 and the plurality of light receiving units 14 , and based on the measurement results, the generation amount of the bubbles 40 of at least one bubble generator 12 is adjusted. Thereby, a nonuniformity of the flow velocity of the liquid 30 flowing on the surface of each substrate 20 can be reduced. Thereby, variation in the etching amount among the substrates can be reduced.
  • FIG. 3 is a schematic diagram schematically illustrating a configuration of some embodiments of a substrate processing device according to a second aspect.
  • components similar to those described above in reference to the first aspect are denoted by same reference numerals, and detailed description thereof will be omitted.
  • a substrate processing device 2 according to the second aspect differ from the substrate processing device 1 according to the first aspect in that a light source 23 and an image capturing device 24 are provided instead of the light emitting units 13 and the light receiving units 14 .
  • the light source 23 and the image capturing device 24 are part of a measurement device that measures the generation state of bubbles 40 of the plurality of bubble generators 12 .
  • the light source 23 is disposed on an upper portion of the bath 10 and/or above the bath 10 and irradiates a liquid surface of the liquid 30 with light.
  • the image capturing device 24 captures an image of the liquid surface irradiated with the light of the light source 23 .
  • the image capturing device 24 outputs the captured image to the control device 15 .
  • FIG. 4 is a side view of some embodiments of the substrate processing device 2 illustrated in FIG. 3 .
  • FIG. 5A is an enlarged view of a liquid surface 30 a illustrated in FIG. 4 .
  • FIG. 5B is a diagram illustrating an example shape of the liquid surface 30 a when bubbles 40 are uniformly generated.
  • a region of the surface where a large amount of bubbles 40 are generated may be convex (e.g. the surface may tend to bubble up), while a region where a small amount of bubbles 40 are generated is relatively flat (e.g. the surface may bubble up less often or may not bubble up).
  • An image captured by the image capturing device 24 may show a shape of the liquid surface 30 a as illustrated in FIG. 5A .
  • a reference image corresponding to a shape of the liquid surface 30 a e.g. a desired shape corresponding to uniform bubble generation
  • FIG. 5B is stored in the control device 15 .
  • control device 15 compares the captured image to the reference image and determines the generation state of the bubbles 40 . In some embodiments, the control device 15 compares the captured image to the reference image, identifies the shape of the liquid surface 30 a , and determines the generation state of the bubbles 40 .
  • the shape of the liquid surface 30 a may be identified using image processing techniques, for example.
  • FIG. 6 is a flowchart illustrating some steps of some embodiments of a substrate processing process according to the second aspect.
  • step S 21 etching of a plurality of substrates 20 is started (step S 21 ). Since the operation at step S 21 is the same as the operation at step S 11 in the first embodiment described above, the description thereof is omitted.
  • the bubble generation state of each bubble generator 12 is measured using the light source 23 and the image capturing device 24 (step S 22 ).
  • the image capturing device 24 captures an image of the liquid surface 30 a .
  • the image capturing device 24 outputs the captured image to the control device 15 .
  • the captured image shows the shape of the liquid surface 30 a , from which the generation state of the bubbles 40 of the bubble generators 12 may be determined.
  • control device 15 compares image captured by the image capturing device 24 with the reference image (step S 23 ). By this comparison, the control device 15 can identify a region where a small amount of bubbles is generated on the liquid surface 30 a . That is, the control device 15 can identify one or more bubble generators 12 generating a small amount of bubbles.
  • the control device adjusts the generation amount of the bubbles 40 of at least one bubble generator 12 (step S 24 ).
  • step S 24 for a bubble generator 12 that is determined to generate a small amount of bubbles, the control device 15 increases the flow rate of the gas using the flow rate adjustment unit 123 in order to increase the generation amount of the bubbles 40 . That is, the control device 15 adjusts the generation amount of the bubbles 40 so that the liquid surface 30 a has the shape illustrated in FIG. 5B .
  • the shape of the liquid surface 30 a is identified by using the light source 23 and the image capturing device 24 . Then, based on the identified shape of the liquid surface 30 a , the control unit 15 determines a generation amount of at least one bubble generator 12 , and the generation amount of the bubbles 40 of at least one bubble generator 12 is adjusted. Therefore, with such a method, it is possible to reduce nonuniformity of the flow velocity of the liquid 30 flowing on the surface of each substrate 20 , and to reduce the variation in the etching amount among the substrates.
  • an image of the liquid surface 30 a can be captured by one image capturing device 24
  • the number of the image capturing devices 24 is not particularly limited.
  • the liquid surface 30 a may be divided into a plurality of regions, and images of respective regions may be captured by different image capturing devices 24 .
  • the control device 15 adjusts the generation amount of the bubbles 40 of at least one bubble generator 12 based on one or more captured images sent from the image capturing devices 24 .
  • the measurement device that measures the generation state of the bubbles 40 of at least one bubble generator 12 is not limited to those measurement devices that include any of the above-described light emitting unit 13 , the light receiving unit 14 , the light source 23 and the image capturing device 24 .
  • a liquid level meter that detects the position of the liquid surface 30 a by utilizing the fact that the specific gravity of the liquid 30 changes depending on the presence or absence of bubbles 40 may be used as the measurement device.

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  • Engineering & Computer Science (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Manufacturing & Machinery (AREA)
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US20220388022A1 (en) * 2021-06-07 2022-12-08 Tokyo Electron Limited Bath Systems and Methods Thereof
US11624607B2 (en) 2020-01-06 2023-04-11 Tokyo Electron Limited Hardware improvements and methods for the analysis of a spinning reflective substrates

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JP7116694B2 (ja) 2019-02-21 2022-08-10 キオクシア株式会社 基板処理装置
JP2020141006A (ja) 2019-02-27 2020-09-03 キオクシア株式会社 基板処理装置および半導体装置の製造方法
JP7381370B2 (ja) 2020-03-05 2023-11-15 キオクシア株式会社 半導体製造装置および半導体装置の製造方法
JP2022026660A (ja) * 2020-07-31 2022-02-10 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置及び基板処理方法
JP2022073306A (ja) * 2020-10-30 2022-05-17 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
WO2022210131A1 (ja) * 2021-04-01 2022-10-06 東京エレクトロン株式会社 基板液処理装置
US20220405902A1 (en) * 2021-06-16 2022-12-22 Tokyo Electron Limited Wafer bath imaging
US20230243059A1 (en) * 2022-01-31 2023-08-03 Applied Materials, Inc. Wafer immersion in semiconductor processing chambers

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