JP6584955B2 - 増幅器カスコードデバイスの静電放電保護 - Google Patents

増幅器カスコードデバイスの静電放電保護 Download PDF

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JP6584955B2
JP6584955B2 JP2015549740A JP2015549740A JP6584955B2 JP 6584955 B2 JP6584955 B2 JP 6584955B2 JP 2015549740 A JP2015549740 A JP 2015549740A JP 2015549740 A JP2015549740 A JP 2015549740A JP 6584955 B2 JP6584955 B2 JP 6584955B2
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transistor
drain
coupled
diode
voltage
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Japanese (ja)
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JP2016501501A (ja
JP2016501501A5 (enExample
Inventor
クハトリ、ヒマンシュ
チョクシ、オジャス・エム．
ジュオ、ウェイ
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Qualcomm Inc
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Qualcomm Inc
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/043—Protection of over-voltage protection device by short-circuiting
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
JP2015549740A 2012-12-19 2013-12-19 増幅器カスコードデバイスの静電放電保護 Active JP6584955B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/720,836 2012-12-19
US13/720,836 US9106072B2 (en) 2012-12-19 2012-12-19 Electrostatic discharge protection of amplifier cascode devices
PCT/US2013/076715 WO2014100491A1 (en) 2012-12-19 2013-12-19 Electrostatic discharge protection of amplifier cascode devices

Publications (3)

Publication Number Publication Date
JP2016501501A JP2016501501A (ja) 2016-01-18
JP2016501501A5 JP2016501501A5 (enExample) 2017-01-12
JP6584955B2 true JP6584955B2 (ja) 2019-10-02

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ID=49943569

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015549740A Active JP6584955B2 (ja) 2012-12-19 2013-12-19 増幅器カスコードデバイスの静電放電保護

Country Status (6)

Country Link
US (1) US9106072B2 (enExample)
EP (1) EP2936678A1 (enExample)
JP (1) JP6584955B2 (enExample)
KR (1) KR20150097622A (enExample)
CN (1) CN104885359A (enExample)
WO (1) WO2014100491A1 (enExample)

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US9722552B2 (en) * 2014-07-10 2017-08-01 Qorvo Us, Inc. Linear FET feedback amplifier
WO2017169645A1 (ja) * 2016-03-30 2017-10-05 株式会社村田製作所 高周波信号増幅回路、電力増幅モジュール、フロントエンド回路および通信装置
EP3367562A1 (en) * 2017-02-22 2018-08-29 Comet AG High power amplifier circuit with protective feedback circuit
JP2018142688A (ja) * 2017-02-28 2018-09-13 株式会社村田製作所 半導体装置
US10404313B1 (en) * 2018-02-21 2019-09-03 Analog Devices, Inc. Low noise amplifiers with output limiting
KR102585868B1 (ko) 2018-07-10 2023-10-05 삼성전기주식회사 캐스코드 구조의 증폭 장치
KR102066008B1 (ko) * 2018-07-16 2020-01-14 주식회사 다이얼로그 세미컨덕터 코리아 최대 정격 성능이 개선된 lna
CN111711422A (zh) * 2020-04-13 2020-09-25 广州慧智微电子有限公司 一种功率放大器的电路
DE112021001623T5 (de) * 2020-04-13 2022-12-29 Skyworks Solutions, Inc. Verstärker mit eingangsleistungsschutz
US11289472B2 (en) 2020-07-30 2022-03-29 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit with electrostatic discharge protection
US20250096737A1 (en) * 2023-09-19 2025-03-20 Qualcomm Incorporated Low-noise amplifier (lna) input impedance improvement using coupling between output inductor and degeneration inductor

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JPH07170654A (ja) * 1993-12-14 1995-07-04 Fuji Electric Co Ltd 半導体装置の過電圧制限回路
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Also Published As

Publication number Publication date
KR20150097622A (ko) 2015-08-26
US20140167862A1 (en) 2014-06-19
EP2936678A1 (en) 2015-10-28
WO2014100491A1 (en) 2014-06-26
JP2016501501A (ja) 2016-01-18
CN104885359A (zh) 2015-09-02
US9106072B2 (en) 2015-08-11

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