CN104885359A - 放大器共源共栅器件的静电放电保护 - Google Patents

放大器共源共栅器件的静电放电保护 Download PDF

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Publication number
CN104885359A
CN104885359A CN201380066583.1A CN201380066583A CN104885359A CN 104885359 A CN104885359 A CN 104885359A CN 201380066583 A CN201380066583 A CN 201380066583A CN 104885359 A CN104885359 A CN 104885359A
Authority
CN
China
Prior art keywords
coupled
diode
drain electrode
transistor
cascode transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201380066583.1A
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English (en)
Chinese (zh)
Inventor
H·卡特里
O·M·乔克斯
W·卓
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of CN104885359A publication Critical patent/CN104885359A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/043—Protection of over-voltage protection device by short-circuiting
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
CN201380066583.1A 2012-12-19 2013-12-19 放大器共源共栅器件的静电放电保护 Pending CN104885359A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/720,836 US9106072B2 (en) 2012-12-19 2012-12-19 Electrostatic discharge protection of amplifier cascode devices
US13/720,836 2012-12-19
PCT/US2013/076715 WO2014100491A1 (en) 2012-12-19 2013-12-19 Electrostatic discharge protection of amplifier cascode devices

Publications (1)

Publication Number Publication Date
CN104885359A true CN104885359A (zh) 2015-09-02

Family

ID=49943569

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380066583.1A Pending CN104885359A (zh) 2012-12-19 2013-12-19 放大器共源共栅器件的静电放电保护

Country Status (6)

Country Link
US (1) US9106072B2 (enExample)
EP (1) EP2936678A1 (enExample)
JP (1) JP6584955B2 (enExample)
KR (1) KR20150097622A (enExample)
CN (1) CN104885359A (enExample)
WO (1) WO2014100491A1 (enExample)

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CN110326216A (zh) * 2017-02-22 2019-10-11 康姆艾德公司 具有保护反馈电路的高功率放大器电路
CN111711422A (zh) * 2020-04-13 2020-09-25 广州慧智微电子有限公司 一种功率放大器的电路
CN113675185A (zh) * 2020-07-30 2021-11-19 台湾积体电路制造股份有限公司 集成电路以及静电放电保护的方法

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US9093966B1 (en) * 2013-09-17 2015-07-28 M/A-Com Technology Solutions Holdings, Inc. ESD protection circuit for cascode amplifiers
US9722552B2 (en) * 2014-07-10 2017-08-01 Qorvo Us, Inc. Linear FET feedback amplifier
WO2017169645A1 (ja) * 2016-03-30 2017-10-05 株式会社村田製作所 高周波信号増幅回路、電力増幅モジュール、フロントエンド回路および通信装置
JP2018142688A (ja) * 2017-02-28 2018-09-13 株式会社村田製作所 半導体装置
US10404313B1 (en) * 2018-02-21 2019-09-03 Analog Devices, Inc. Low noise amplifiers with output limiting
KR102585868B1 (ko) 2018-07-10 2023-10-05 삼성전기주식회사 캐스코드 구조의 증폭 장치
KR102066008B1 (ko) * 2018-07-16 2020-01-14 주식회사 다이얼로그 세미컨덕터 코리아 최대 정격 성능이 개선된 lna
CN115699566A (zh) * 2020-04-13 2023-02-03 天工方案公司 具有输入功率保护的放大器
US20250096737A1 (en) * 2023-09-19 2025-03-20 Qualcomm Incorporated Low-noise amplifier (lna) input impedance improvement using coupling between output inductor and degeneration inductor

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110326216A (zh) * 2017-02-22 2019-10-11 康姆艾德公司 具有保护反馈电路的高功率放大器电路
CN110326216B (zh) * 2017-02-22 2023-06-02 康姆艾德公司 具有保护反馈电路的高功率放大器电路
CN111711422A (zh) * 2020-04-13 2020-09-25 广州慧智微电子有限公司 一种功率放大器的电路
CN113675185A (zh) * 2020-07-30 2021-11-19 台湾积体电路制造股份有限公司 集成电路以及静电放电保护的方法
CN113675185B (zh) * 2020-07-30 2024-06-25 台湾积体电路制造股份有限公司 集成电路以及静电放电保护的方法
US12094871B2 (en) 2020-07-30 2024-09-17 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit with electrostatic discharge protection

Also Published As

Publication number Publication date
JP6584955B2 (ja) 2019-10-02
US20140167862A1 (en) 2014-06-19
WO2014100491A1 (en) 2014-06-26
EP2936678A1 (en) 2015-10-28
JP2016501501A (ja) 2016-01-18
US9106072B2 (en) 2015-08-11
KR20150097622A (ko) 2015-08-26

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SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20150902

RJ01 Rejection of invention patent application after publication