JP6574775B2 - 欠陥密度の低いバルクの炭化ケイ素 - Google Patents

欠陥密度の低いバルクの炭化ケイ素 Download PDF

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Publication number
JP6574775B2
JP6574775B2 JP2016540423A JP2016540423A JP6574775B2 JP 6574775 B2 JP6574775 B2 JP 6574775B2 JP 2016540423 A JP2016540423 A JP 2016540423A JP 2016540423 A JP2016540423 A JP 2016540423A JP 6574775 B2 JP6574775 B2 JP 6574775B2
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silicon carbide
seed
crucible
boule
carbide boule
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JP2016531837A (ja
JP2016531837A5 (enExample
Inventor
ローマン ヴィー． ドラチェフ，
ローマン ヴィー． ドラチェフ，
パルタサラティ サンタナラガヴァン，
パルタサラティ サンタナラガヴァン，
アンドリー エム． アンドルキヴ，
アンドリー エム． アンドルキヴ，
デイヴィッド エス． ライトル，
デイヴィッド エス． ライトル，
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GTAT Corp
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GTAT Corp
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/21—Circular sheet or circular blank

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2016540423A 2013-09-06 2014-09-05 欠陥密度の低いバルクの炭化ケイ素 Active JP6574775B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361874640P 2013-09-06 2013-09-06
US61/874,640 2013-09-06
PCT/US2014/054301 WO2015035170A1 (en) 2013-09-06 2014-09-05 Bulk silicon carbide having low defect density

Related Child Applications (1)

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JP2019149764A Division JP7054934B2 (ja) 2013-09-06 2019-08-19 欠陥密度の低いバルクの炭化ケイ素

Publications (3)

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JP2016531837A JP2016531837A (ja) 2016-10-13
JP2016531837A5 JP2016531837A5 (enExample) 2017-10-19
JP6574775B2 true JP6574775B2 (ja) 2019-09-11

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JP2016540423A Active JP6574775B2 (ja) 2013-09-06 2014-09-05 欠陥密度の低いバルクの炭化ケイ素
JP2019149764A Active JP7054934B2 (ja) 2013-09-06 2019-08-19 欠陥密度の低いバルクの炭化ケイ素

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JP2019149764A Active JP7054934B2 (ja) 2013-09-06 2019-08-19 欠陥密度の低いバルクの炭化ケイ素

Country Status (7)

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US (1) US9512542B2 (enExample)
JP (2) JP6574775B2 (enExample)
KR (1) KR102245509B1 (enExample)
CN (1) CN105518191B (enExample)
DE (1) DE112014004093T5 (enExample)
TW (1) TWI648218B (enExample)
WO (1) WO2015035170A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI660076B (zh) * 2017-10-06 2019-05-21 環球晶圓股份有限公司 碳化矽晶體及其製造方法
JP7393900B2 (ja) 2019-09-24 2023-12-07 一般財団法人電力中央研究所 炭化珪素単結晶ウェハ及び炭化珪素単結晶インゴットの製造方法
JP2023103015A (ja) * 2022-01-13 2023-07-26 信越半導体株式会社 炭化珪素単結晶製造方法、及び炭化珪素単結晶製造装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06316499A (ja) * 1993-04-30 1994-11-15 Sharp Corp 炭化珪素単結晶の製造方法
KR100454275B1 (ko) 1995-08-16 2005-01-31 시크리스탈 아게 단결정을생성시키기위한시이드결정,상기시이드결정의용도및SiC단결정또는단결정SiC층의생성방법
US5683507A (en) * 1995-09-05 1997-11-04 Northrop Grumman Corporation Apparatus for growing large silicon carbide single crystals
US5944890A (en) * 1996-03-29 1999-08-31 Denso Corporation Method of producing single crystals and a seed crystal used in the method
JP4450118B2 (ja) * 1999-10-15 2010-04-14 株式会社デンソー 炭化珪素単結晶の製造方法
US6508880B2 (en) * 2000-02-15 2003-01-21 The Fox Group, Inc. Apparatus for growing low defect density silicon carbide
US7294324B2 (en) * 2004-09-21 2007-11-13 Cree, Inc. Low basal plane dislocation bulk grown SiC wafers
US7314521B2 (en) * 2004-10-04 2008-01-01 Cree, Inc. Low micropipe 100 mm silicon carbide wafer
US7300519B2 (en) * 2004-11-17 2007-11-27 Cree, Inc. Reduction of subsurface damage in the production of bulk SiC crystals
CN101680112A (zh) * 2007-01-16 2010-03-24 Ii-Vi有限公司 借助多层生长导向器的直径导向式SiC升华生长
JP5779171B2 (ja) * 2009-03-26 2015-09-16 トゥー‐シックス・インコーポレイテッド ＳｉＣ単結晶の昇華成長方法及び装置
WO2011034850A1 (en) * 2009-09-15 2011-03-24 Ii-Vi Incorporated Sublimation growth of sic single crystals
WO2011065060A1 (ja) * 2009-11-30 2011-06-03 住友電気工業株式会社 単結晶の製造方法
JP5614387B2 (ja) * 2011-08-29 2014-10-29 新日鐵住金株式会社 炭化珪素単結晶の製造方法、及び炭化珪素単結晶インゴット
JP5696630B2 (ja) * 2011-09-21 2015-04-08 住友電気工業株式会社 炭化珪素基板およびその製造方法
EP2852699B1 (en) * 2012-04-20 2025-01-29 II-VI Incorporated Method and apparatus for preapring large diameter, high quality sic single crystals
JP6473455B2 (ja) * 2013-09-06 2019-02-20 ジーティーエイティー コーポレーションＧｔａｔ Ｃｏｒｐｏｒａｔｉｏｎ 炭化ケイ素シードを用いたバルクの炭化ケイ素の製造方法及び装置

Also Published As

Publication number Publication date
DE112014004093T5 (de) 2016-06-23
WO2015035170A1 (en) 2015-03-12
CN105518191B (zh) 2021-05-11
JP2016531837A (ja) 2016-10-13
KR20160050088A (ko) 2016-05-10
JP7054934B2 (ja) 2022-04-15
JP2019214512A (ja) 2019-12-19
TW201515995A (zh) 2015-05-01
CN105518191A (zh) 2016-04-20
US9512542B2 (en) 2016-12-06
KR102245509B1 (ko) 2021-04-28
TWI648218B (zh) 2019-01-21
US20150072101A1 (en) 2015-03-12

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