TWI648218B - 具有低缺陷密度的大塊矽碳化物 - Google Patents
具有低缺陷密度的大塊矽碳化物 Download PDFInfo
- Publication number
- TWI648218B TWI648218B TW103130962A TW103130962A TWI648218B TW I648218 B TWI648218 B TW I648218B TW 103130962 A TW103130962 A TW 103130962A TW 103130962 A TW103130962 A TW 103130962A TW I648218 B TWI648218 B TW I648218B
- Authority
- TW
- Taiwan
- Prior art keywords
- silicon carbide
- seed
- pear crystal
- item
- pear
- Prior art date
Links
- 230000007547 defect Effects 0.000 title claims description 25
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 title 1
- 229910003468 tantalcarbide Inorganic materials 0.000 title 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 224
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 223
- 238000000859 sublimation Methods 0.000 claims abstract description 29
- 230000008022 sublimation Effects 0.000 claims abstract description 29
- 239000013078 crystal Substances 0.000 claims description 111
- 235000014443 Pyrus communis Nutrition 0.000 claims description 60
- 238000000576 coating method Methods 0.000 claims description 9
- 239000003973 paint Substances 0.000 claims description 2
- 239000002131 composite material Substances 0.000 claims 1
- 239000002243 precursor Substances 0.000 abstract description 46
- 238000000034 method Methods 0.000 abstract description 34
- 239000012212 insulator Substances 0.000 abstract description 24
- 238000010438 heat treatment Methods 0.000 abstract description 22
- 239000000463 material Substances 0.000 abstract description 15
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 55
- 239000010410 layer Substances 0.000 description 48
- 229910002804 graphite Inorganic materials 0.000 description 33
- 239000010439 graphite Substances 0.000 description 32
- 235000012431 wafers Nutrition 0.000 description 28
- 230000012010 growth Effects 0.000 description 25
- 229910052710 silicon Inorganic materials 0.000 description 25
- 239000010703 silicon Substances 0.000 description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 23
- 239000000203 mixture Substances 0.000 description 23
- 229910052799 carbon Inorganic materials 0.000 description 22
- 239000002245 particle Substances 0.000 description 18
- 239000007787 solid Substances 0.000 description 15
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 230000008569 process Effects 0.000 description 8
- 230000006698 induction Effects 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000010453 quartz Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000003153 chemical reaction reagent Substances 0.000 description 4
- 239000008187 granular material Substances 0.000 description 4
- 239000011856 silicon-based particle Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- -1 for example Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- SEPPVOUBHWNCAW-FNORWQNLSA-N (E)-4-oxonon-2-enal Chemical compound CCCCCC(=O)\C=C\C=O SEPPVOUBHWNCAW-FNORWQNLSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- LLBZPESJRQGYMB-UHFFFAOYSA-N 4-one Natural products O1C(C(=O)CC)CC(C)C11C2(C)CCC(C3(C)C(C(C)(CO)C(OC4C(C(O)C(O)C(COC5C(C(O)C(O)CO5)OC5C(C(OC6C(C(O)C(O)C(CO)O6)O)C(O)C(CO)O5)OC5C(C(O)C(O)C(C)O5)O)O4)O)CC3)CC3)=C3C2(C)CC1 LLBZPESJRQGYMB-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000008241 heterogeneous mixture Substances 0.000 description 1
- 239000008240 homogeneous mixture Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 230000035040 seed growth Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/025—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/21—Circular sheet or circular blank
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361874640P | 2013-09-06 | 2013-09-06 | |
| US61/874,640 | 2013-09-06 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201515995A TW201515995A (zh) | 2015-05-01 |
| TWI648218B true TWI648218B (zh) | 2019-01-21 |
Family
ID=52625896
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103130962A TWI648218B (zh) | 2013-09-06 | 2014-09-09 | 具有低缺陷密度的大塊矽碳化物 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9512542B2 (enExample) |
| JP (2) | JP6574775B2 (enExample) |
| KR (1) | KR102245509B1 (enExample) |
| CN (1) | CN105518191B (enExample) |
| DE (1) | DE112014004093T5 (enExample) |
| TW (1) | TWI648218B (enExample) |
| WO (1) | WO2015035170A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI660076B (zh) * | 2017-10-06 | 2019-05-21 | 環球晶圓股份有限公司 | 碳化矽晶體及其製造方法 |
| JP7393900B2 (ja) | 2019-09-24 | 2023-12-07 | 一般財団法人電力中央研究所 | 炭化珪素単結晶ウェハ及び炭化珪素単結晶インゴットの製造方法 |
| JP2023103015A (ja) * | 2022-01-13 | 2023-07-26 | 信越半導体株式会社 | 炭化珪素単結晶製造方法、及び炭化珪素単結晶製造装置 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5985026A (en) * | 1995-08-16 | 1999-11-16 | Siemens Aktiengesellschaft | Seed crystal for producing monocrystals and method for producing SiC monocrystals or monocrystalline SiC layers |
| JP2003523918A (ja) * | 2000-02-15 | 2003-08-12 | ザ フォックス グループ，インコーポレイティド | 低欠陥密度炭化ケイ素を成長させる方法及び装置、並びに得られる物質 |
| CN102414349A (zh) * | 2009-11-30 | 2012-04-11 | 住友电气工业株式会社 | 制造单晶的方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06316499A (ja) * | 1993-04-30 | 1994-11-15 | Sharp Corp | 炭化珪素単結晶の製造方法 |
| US5683507A (en) | 1995-09-05 | 1997-11-04 | Northrop Grumman Corporation | Apparatus for growing large silicon carbide single crystals |
| US5944890A (en) * | 1996-03-29 | 1999-08-31 | Denso Corporation | Method of producing single crystals and a seed crystal used in the method |
| JP4450118B2 (ja) * | 1999-10-15 | 2010-04-14 | 株式会社デンソー | 炭化珪素単結晶の製造方法 |
| US7294324B2 (en) * | 2004-09-21 | 2007-11-13 | Cree, Inc. | Low basal plane dislocation bulk grown SiC wafers |
| US7314521B2 (en) * | 2004-10-04 | 2008-01-01 | Cree, Inc. | Low micropipe 100 mm silicon carbide wafer |
| US7300519B2 (en) * | 2004-11-17 | 2007-11-27 | Cree, Inc. | Reduction of subsurface damage in the production of bulk SiC crystals |
| US8313720B2 (en) | 2007-01-16 | 2012-11-20 | Ii-Vi Incorporated | Guided diameter SiC sublimation growth with multi-layer growth guide |
| US10294584B2 (en) * | 2009-03-26 | 2019-05-21 | Ii-Vi Incorporated | SiC single crystal sublimation growth method and apparatus |
| KR20120082873A (ko) * | 2009-09-15 | 2012-07-24 | 투-식스 인코포레이티드 | ＳｉＣ 단결정의 승화 성장 |
| JP5614387B2 (ja) * | 2011-08-29 | 2014-10-29 | 新日鐵住金株式会社 | 炭化珪素単結晶の製造方法、及び炭化珪素単結晶インゴット |
| JP5696630B2 (ja) * | 2011-09-21 | 2015-04-08 | 住友電気工業株式会社 | 炭化珪素基板およびその製造方法 |
| EP2851456A1 (en) * | 2012-04-20 | 2015-03-25 | II-VI Incorporated | Large Diameter, High Quality SiC Single Crystals, Method and Apparatus |
| CN105518189B (zh) * | 2013-09-06 | 2019-10-15 | Gtat公司 | 使用硅碳化物晶种来生产大块硅碳化物的方法和器具 |
-
2014
- 2014-09-05 US US14/478,674 patent/US9512542B2/en active Active
- 2014-09-05 CN CN201480049200.4A patent/CN105518191B/zh active Active
- 2014-09-05 WO PCT/US2014/054301 patent/WO2015035170A1/en not_active Ceased
- 2014-09-05 DE DE112014004093.2T patent/DE112014004093T5/de active Pending
- 2014-09-05 KR KR1020167008947A patent/KR102245509B1/ko active Active
- 2014-09-05 JP JP2016540423A patent/JP6574775B2/ja active Active
- 2014-09-09 TW TW103130962A patent/TWI648218B/zh active
-
2019
- 2019-08-19 JP JP2019149764A patent/JP7054934B2/ja active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5985026A (en) * | 1995-08-16 | 1999-11-16 | Siemens Aktiengesellschaft | Seed crystal for producing monocrystals and method for producing SiC monocrystals or monocrystalline SiC layers |
| JP2003523918A (ja) * | 2000-02-15 | 2003-08-12 | ザ フォックス グループ，インコーポレイティド | 低欠陥密度炭化ケイ素を成長させる方法及び装置、並びに得られる物質 |
| CN102414349A (zh) * | 2009-11-30 | 2012-04-11 | 住友电气工业株式会社 | 制造单晶的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201515995A (zh) | 2015-05-01 |
| CN105518191A (zh) | 2016-04-20 |
| KR20160050088A (ko) | 2016-05-10 |
| US20150072101A1 (en) | 2015-03-12 |
| JP7054934B2 (ja) | 2022-04-15 |
| JP2019214512A (ja) | 2019-12-19 |
| JP6574775B2 (ja) | 2019-09-11 |
| US9512542B2 (en) | 2016-12-06 |
| DE112014004093T5 (de) | 2016-06-23 |
| JP2016531837A (ja) | 2016-10-13 |
| WO2015035170A1 (en) | 2015-03-12 |
| CN105518191B (zh) | 2021-05-11 |
| KR102245509B1 (ko) | 2021-04-28 |
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