CN105518191B - 具有低缺陷密度的大块硅碳化物 - Google Patents

具有低缺陷密度的大块硅碳化物 Download PDF

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CN105518191B
CN105518191B CN201480049200.4A CN201480049200A CN105518191B CN 105518191 B CN105518191 B CN 105518191B CN 201480049200 A CN201480049200 A CN 201480049200A CN 105518191 B CN105518191 B CN 105518191B
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silicon carbide
seed
crystal
pear crystal
pear
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Chinese (zh)
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CN105518191A (zh
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R·V·德切夫
P·萨坦纳日哈瓦
A·M·安德凯威
D·S·李特尔
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Gtat Co
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Gtat Co
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/21—Circular sheet or circular blank

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN201480049200.4A 2013-09-06 2014-09-05 具有低缺陷密度的大块硅碳化物 Active CN105518191B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361874640P 2013-09-06 2013-09-06
US61/874,640 2013-09-06
PCT/US2014/054301 WO2015035170A1 (en) 2013-09-06 2014-09-05 Bulk silicon carbide having low defect density

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CN105518191A CN105518191A (zh) 2016-04-20
CN105518191B true CN105518191B (zh) 2021-05-11

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US (1) US9512542B2 (enExample)
JP (2) JP6574775B2 (enExample)
KR (1) KR102245509B1 (enExample)
CN (1) CN105518191B (enExample)
DE (1) DE112014004093T5 (enExample)
TW (1) TWI648218B (enExample)
WO (1) WO2015035170A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI660076B (zh) * 2017-10-06 2019-05-21 環球晶圓股份有限公司 碳化矽晶體及其製造方法
JP7393900B2 (ja) 2019-09-24 2023-12-07 一般財団法人電力中央研究所 炭化珪素単結晶ウェハ及び炭化珪素単結晶インゴットの製造方法
JP2023103015A (ja) * 2022-01-13 2023-07-26 信越半導体株式会社 炭化珪素単結晶製造方法、及び炭化珪素単結晶製造装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5944890A (en) * 1996-03-29 1999-08-31 Denso Corporation Method of producing single crystals and a seed crystal used in the method
CN101084330A (zh) * 2004-10-04 2007-12-05 格里公司 低微管100mm碳化硅晶片
CN101194052A (zh) * 2005-06-08 2008-06-04 克里公司 低基面位错块体生长的SiC晶片
CN101680112A (zh) * 2007-01-16 2010-03-24 Ii-Vi有限公司 借助多层生长导向器的直径导向式SiC升华生长
WO2010111473A1 (en) * 2009-03-26 2010-09-30 Ii-Vi Incorporated Sic single crystal sublimation growth method and apparatus
CN102414349A (zh) * 2009-11-30 2012-04-11 住友电气工业株式会社 制造单晶的方法
JP2013047159A (ja) * 2011-08-29 2013-03-07 Nippon Steel & Sumitomo Metal Corp 炭化珪素単結晶の製造方法、炭化珪素単結晶インゴット、及び炭化珪素単結晶基板

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06316499A (ja) * 1993-04-30 1994-11-15 Sharp Corp 炭化珪素単結晶の製造方法
KR100454275B1 (ko) 1995-08-16 2005-01-31 시크리스탈 아게 단결정을생성시키기위한시이드결정,상기시이드결정의용도및SiC단결정또는단결정SiC층의생성방법
US5683507A (en) * 1995-09-05 1997-11-04 Northrop Grumman Corporation Apparatus for growing large silicon carbide single crystals
JP4450118B2 (ja) * 1999-10-15 2010-04-14 株式会社デンソー 炭化珪素単結晶の製造方法
US6508880B2 (en) * 2000-02-15 2003-01-21 The Fox Group, Inc. Apparatus for growing low defect density silicon carbide
US7300519B2 (en) * 2004-11-17 2007-11-27 Cree, Inc. Reduction of subsurface damage in the production of bulk SiC crystals
WO2011034850A1 (en) * 2009-09-15 2011-03-24 Ii-Vi Incorporated Sublimation growth of sic single crystals
JP5696630B2 (ja) * 2011-09-21 2015-04-08 住友電気工業株式会社 炭化珪素基板およびその製造方法
EP2852699B1 (en) * 2012-04-20 2025-01-29 II-VI Incorporated Method and apparatus for preapring large diameter, high quality sic single crystals
JP6473455B2 (ja) * 2013-09-06 2019-02-20 ジーティーエイティー コーポレーションＧｔａｔ Ｃｏｒｐｏｒａｔｉｏｎ 炭化ケイ素シードを用いたバルクの炭化ケイ素の製造方法及び装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5944890A (en) * 1996-03-29 1999-08-31 Denso Corporation Method of producing single crystals and a seed crystal used in the method
CN101084330A (zh) * 2004-10-04 2007-12-05 格里公司 低微管100mm碳化硅晶片
CN101194052A (zh) * 2005-06-08 2008-06-04 克里公司 低基面位错块体生长的SiC晶片
CN101680112A (zh) * 2007-01-16 2010-03-24 Ii-Vi有限公司 借助多层生长导向器的直径导向式SiC升华生长
WO2010111473A1 (en) * 2009-03-26 2010-09-30 Ii-Vi Incorporated Sic single crystal sublimation growth method and apparatus
CN102414349A (zh) * 2009-11-30 2012-04-11 住友电气工业株式会社 制造单晶的方法
JP2013047159A (ja) * 2011-08-29 2013-03-07 Nippon Steel & Sumitomo Metal Corp 炭化珪素単結晶の製造方法、炭化珪素単結晶インゴット、及び炭化珪素単結晶基板

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Publication number Publication date
DE112014004093T5 (de) 2016-06-23
WO2015035170A1 (en) 2015-03-12
JP2016531837A (ja) 2016-10-13
JP6574775B2 (ja) 2019-09-11
KR20160050088A (ko) 2016-05-10
JP7054934B2 (ja) 2022-04-15
JP2019214512A (ja) 2019-12-19
TW201515995A (zh) 2015-05-01
CN105518191A (zh) 2016-04-20
US9512542B2 (en) 2016-12-06
KR102245509B1 (ko) 2021-04-28
TWI648218B (zh) 2019-01-21
US20150072101A1 (en) 2015-03-12

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