KR102245509B1 - 저결함밀도를 갖는 벌크 탄화규소 - Google Patents

저결함밀도를 갖는 벌크 탄화규소 Download PDF

Info

Publication number
KR102245509B1
KR102245509B1 KR1020167008947A KR20167008947A KR102245509B1 KR 102245509 B1 KR102245509 B1 KR 102245509B1 KR 1020167008947 A KR1020167008947 A KR 1020167008947A KR 20167008947 A KR20167008947 A KR 20167008947A KR 102245509 B1 KR102245509 B1 KR 102245509B1
Authority
KR
South Korea
Prior art keywords
silicon carbide
seed
crucible
bowl
carbide bowl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020167008947A
Other languages
English (en)
Korean (ko)
Other versions
KR20160050088A (ko
Inventor
로먼 브이. 드라체브
빠르티싸르티 산타나라가반
안드리히 엠. 안드루크히브
데이비드 에스. 리틀
Original Assignee
지티에이티 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 지티에이티 코포레이션 filed Critical 지티에이티 코포레이션
Publication of KR20160050088A publication Critical patent/KR20160050088A/ko
Application granted granted Critical
Publication of KR102245509B1 publication Critical patent/KR102245509B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/21—Circular sheet or circular blank

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020167008947A 2013-09-06 2014-09-05 저결함밀도를 갖는 벌크 탄화규소 Active KR102245509B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361874640P 2013-09-06 2013-09-06
US61/874,640 2013-09-06
PCT/US2014/054301 WO2015035170A1 (en) 2013-09-06 2014-09-05 Bulk silicon carbide having low defect density

Publications (2)

Publication Number Publication Date
KR20160050088A KR20160050088A (ko) 2016-05-10
KR102245509B1 true KR102245509B1 (ko) 2021-04-28

Family

ID=52625896

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167008947A Active KR102245509B1 (ko) 2013-09-06 2014-09-05 저결함밀도를 갖는 벌크 탄화규소

Country Status (7)

Country Link
US (1) US9512542B2 (enExample)
JP (2) JP6574775B2 (enExample)
KR (1) KR102245509B1 (enExample)
CN (1) CN105518191B (enExample)
DE (1) DE112014004093T5 (enExample)
TW (1) TWI648218B (enExample)
WO (1) WO2015035170A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI660076B (zh) * 2017-10-06 2019-05-21 環球晶圓股份有限公司 碳化矽晶體及其製造方法
JP7393900B2 (ja) 2019-09-24 2023-12-07 一般財団法人電力中央研究所 炭化珪素単結晶ウェハ及び炭化珪素単結晶インゴットの製造方法
JP2023103015A (ja) * 2022-01-13 2023-07-26 信越半導体株式会社 炭化珪素単結晶製造方法、及び炭化珪素単結晶製造装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001063020A1 (en) 2000-02-15 2001-08-30 The Fox Group, Inc. Method and apparatus for growing low defect density silicon carbide and resulting material
US20070209577A1 (en) 2004-10-04 2007-09-13 Adrian Powell Low micropipe 100 mm silicon carbide wafer

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06316499A (ja) * 1993-04-30 1994-11-15 Sharp Corp 炭化珪素単結晶の製造方法
KR100454275B1 (ko) 1995-08-16 2005-01-31 시크리스탈 아게 단결정을생성시키기위한시이드결정,상기시이드결정의용도및SiC단결정또는단결정SiC층의생성방법
US5683507A (en) * 1995-09-05 1997-11-04 Northrop Grumman Corporation Apparatus for growing large silicon carbide single crystals
US5944890A (en) * 1996-03-29 1999-08-31 Denso Corporation Method of producing single crystals and a seed crystal used in the method
JP4450118B2 (ja) * 1999-10-15 2010-04-14 株式会社デンソー 炭化珪素単結晶の製造方法
US7294324B2 (en) * 2004-09-21 2007-11-13 Cree, Inc. Low basal plane dislocation bulk grown SiC wafers
US7300519B2 (en) * 2004-11-17 2007-11-27 Cree, Inc. Reduction of subsurface damage in the production of bulk SiC crystals
CN101680112A (zh) * 2007-01-16 2010-03-24 Ii-Vi有限公司 借助多层生长导向器的直径导向式SiC升华生长
JP5779171B2 (ja) * 2009-03-26 2015-09-16 トゥー‐シックス・インコーポレイテッド ＳｉＣ単結晶の昇華成長方法及び装置
WO2011034850A1 (en) * 2009-09-15 2011-03-24 Ii-Vi Incorporated Sublimation growth of sic single crystals
WO2011065060A1 (ja) * 2009-11-30 2011-06-03 住友電気工業株式会社 単結晶の製造方法
JP5614387B2 (ja) * 2011-08-29 2014-10-29 新日鐵住金株式会社 炭化珪素単結晶の製造方法、及び炭化珪素単結晶インゴット
JP5696630B2 (ja) * 2011-09-21 2015-04-08 住友電気工業株式会社 炭化珪素基板およびその製造方法
EP2852699B1 (en) * 2012-04-20 2025-01-29 II-VI Incorporated Method and apparatus for preapring large diameter, high quality sic single crystals
JP6473455B2 (ja) * 2013-09-06 2019-02-20 ジーティーエイティー コーポレーションＧｔａｔ Ｃｏｒｐｏｒａｔｉｏｎ 炭化ケイ素シードを用いたバルクの炭化ケイ素の製造方法及び装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001063020A1 (en) 2000-02-15 2001-08-30 The Fox Group, Inc. Method and apparatus for growing low defect density silicon carbide and resulting material
US20070209577A1 (en) 2004-10-04 2007-09-13 Adrian Powell Low micropipe 100 mm silicon carbide wafer

Also Published As

Publication number Publication date
DE112014004093T5 (de) 2016-06-23
WO2015035170A1 (en) 2015-03-12
CN105518191B (zh) 2021-05-11
JP2016531837A (ja) 2016-10-13
JP6574775B2 (ja) 2019-09-11
KR20160050088A (ko) 2016-05-10
JP7054934B2 (ja) 2022-04-15
JP2019214512A (ja) 2019-12-19
TW201515995A (zh) 2015-05-01
CN105518191A (zh) 2016-04-20
US9512542B2 (en) 2016-12-06
TWI648218B (zh) 2019-01-21
US20150072101A1 (en) 2015-03-12

Similar Documents

Publication Publication Date Title
KR102245507B1 (ko) 탄화규소 시드를 사용하여 벌크 탄화규소를 제조하기 위한 방법 및 장치
KR102245508B1 (ko) 벌크 탄화규소를 제조하기 위한 장치
KR102245506B1 (ko) 탄화규소 전구체로부터 벌크 탄화규소를 제조하기 위한 방법 및 장치
KR102266585B1 (ko) 벌크 탄화규소를 제조하기 위한 방법
KR102245509B1 (ko) 저결함밀도를 갖는 벌크 탄화규소

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20160405

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20190902

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20200928

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20210406

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20210422

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20210423

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20240326

Start annual number: 4

End annual number: 4