JP2016531837A5 - - Google Patents

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Publication number
JP2016531837A5
JP2016531837A5 JP2016540423A JP2016540423A JP2016531837A5 JP 2016531837 A5 JP2016531837 A5 JP 2016531837A5 JP 2016540423 A JP2016540423 A JP 2016540423A JP 2016540423 A JP2016540423 A JP 2016540423A JP 2016531837 A5 JP2016531837 A5 JP 2016531837A5
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JP
Japan
Prior art keywords
silicon carbide
carbide boule
boule
maximum diameter
diameter greater
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2016540423A
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English (en)
Japanese (ja)
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JP2016531837A (ja
JP6574775B2 (ja
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Publication date
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Priority claimed from PCT/US2014/054301 external-priority patent/WO2015035170A1/en
Publication of JP2016531837A publication Critical patent/JP2016531837A/ja
Publication of JP2016531837A5 publication Critical patent/JP2016531837A5/ja
Application granted granted Critical
Publication of JP6574775B2 publication Critical patent/JP6574775B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2016540423A 2013-09-06 2014-09-05 欠陥密度の低いバルクの炭化ケイ素 Active JP6574775B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361874640P 2013-09-06 2013-09-06
US61/874,640 2013-09-06
PCT/US2014/054301 WO2015035170A1 (en) 2013-09-06 2014-09-05 Bulk silicon carbide having low defect density

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2019149764A Division JP7054934B2 (ja) 2013-09-06 2019-08-19 欠陥密度の低いバルクの炭化ケイ素

Publications (3)

Publication Number Publication Date
JP2016531837A JP2016531837A (ja) 2016-10-13
JP2016531837A5 true JP2016531837A5 (enExample) 2017-10-19
JP6574775B2 JP6574775B2 (ja) 2019-09-11

Family

ID=52625896

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2016540423A Active JP6574775B2 (ja) 2013-09-06 2014-09-05 欠陥密度の低いバルクの炭化ケイ素
JP2019149764A Active JP7054934B2 (ja) 2013-09-06 2019-08-19 欠陥密度の低いバルクの炭化ケイ素

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2019149764A Active JP7054934B2 (ja) 2013-09-06 2019-08-19 欠陥密度の低いバルクの炭化ケイ素

Country Status (7)

Country Link
US (1) US9512542B2 (enExample)
JP (2) JP6574775B2 (enExample)
KR (1) KR102245509B1 (enExample)
CN (1) CN105518191B (enExample)
DE (1) DE112014004093T5 (enExample)
TW (1) TWI648218B (enExample)
WO (1) WO2015035170A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI660076B (zh) * 2017-10-06 2019-05-21 環球晶圓股份有限公司 碳化矽晶體及其製造方法
JP7393900B2 (ja) * 2019-09-24 2023-12-07 一般財団法人電力中央研究所 炭化珪素単結晶ウェハ及び炭化珪素単結晶インゴットの製造方法
JP2023103015A (ja) * 2022-01-13 2023-07-26 信越半導体株式会社 炭化珪素単結晶製造方法、及び炭化珪素単結晶製造装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06316499A (ja) * 1993-04-30 1994-11-15 Sharp Corp 炭化珪素単結晶の製造方法
RU2163273C2 (ru) * 1995-08-16 2001-02-20 Сименс Акциенгезелльшафт Затравочный кристалл для изготовления монокристаллов и способ изготовления монокристаллов карбида кремния
US5683507A (en) * 1995-09-05 1997-11-04 Northrop Grumman Corporation Apparatus for growing large silicon carbide single crystals
US5944890A (en) * 1996-03-29 1999-08-31 Denso Corporation Method of producing single crystals and a seed crystal used in the method
JP4450118B2 (ja) * 1999-10-15 2010-04-14 株式会社デンソー 炭化珪素単結晶の製造方法
US6508880B2 (en) 2000-02-15 2003-01-21 The Fox Group, Inc. Apparatus for growing low defect density silicon carbide
US7294324B2 (en) * 2004-09-21 2007-11-13 Cree, Inc. Low basal plane dislocation bulk grown SiC wafers
US7314521B2 (en) * 2004-10-04 2008-01-01 Cree, Inc. Low micropipe 100 mm silicon carbide wafer
US7300519B2 (en) * 2004-11-17 2007-11-27 Cree, Inc. Reduction of subsurface damage in the production of bulk SiC crystals
JP2010515661A (ja) * 2007-01-16 2010-05-13 トゥー‐シックス・インコーポレイテッド 多層成長ガイドを用いた誘導直径ＳｉＣ昇華成長
EP2411569B1 (en) * 2009-03-26 2021-09-22 II-VI Incorporated Sic single crystal sublimation growth method and apparatus
CN102596804A (zh) * 2009-09-15 2012-07-18 Ii-Vi有限公司 SiC单晶的升华生长
WO2011065060A1 (ja) * 2009-11-30 2011-06-03 住友電気工業株式会社 単結晶の製造方法
JP5614387B2 (ja) * 2011-08-29 2014-10-29 新日鐵住金株式会社 炭化珪素単結晶の製造方法、及び炭化珪素単結晶インゴット
JP5696630B2 (ja) * 2011-09-21 2015-04-08 住友電気工業株式会社 炭化珪素基板およびその製造方法
WO2013159083A1 (en) * 2012-04-20 2013-10-24 Ii-Vi Incorporated LARGE DIAMETER, HIGH QUALITY SiC SINGLE CRYSTALS, METHOD AND APPARATUS
US10793971B2 (en) * 2013-09-06 2020-10-06 Gtat Corporation Method and apparatus for producing bulk silicon carbide using a silicon carbide seed

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