WO2015160092A3 - 메모리 소자 - Google Patents

메모리 소자 Download PDF

Info

Publication number
WO2015160092A3
WO2015160092A3 PCT/KR2015/002606 KR2015002606W WO2015160092A3 WO 2015160092 A3 WO2015160092 A3 WO 2015160092A3 KR 2015002606 W KR2015002606 W KR 2015002606W WO 2015160092 A3 WO2015160092 A3 WO 2015160092A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
memory element
tunnel junction
lower electrode
magnetic tunnel
Prior art date
Application number
PCT/KR2015/002606
Other languages
English (en)
French (fr)
Other versions
WO2015160092A2 (ko
Inventor
박재근
이두영
이승은
전민수
백종웅
심태헌
Original Assignee
한양대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 한양대학교 산학협력단 filed Critical 한양대학교 산학협력단
Priority to US16/094,265 priority Critical patent/US10586919B2/en
Publication of WO2015160092A2 publication Critical patent/WO2015160092A2/ko
Publication of WO2015160092A3 publication Critical patent/WO2015160092A3/ko

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)

Abstract

본 발명은 기판 상에 하부 전극, 버퍼층, 시드층, 자기 터널 접합, 캐핑층, 합성 교환 반자성층 및 상부 전극이 적층 형성되고, 하부 전극 및 시드층은 다결정의 도전 물질로 형성되며, 400℃ 이상의 열처리 온도에서도 자기 터널 접합의 수직 자기 이방성이 유지되는 메모리 소자를 제시한다.
PCT/KR2015/002606 2014-04-18 2015-03-18 메모리 소자 WO2015160092A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US16/094,265 US10586919B2 (en) 2014-04-18 2015-03-18 Memory device

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1020140046563 2014-04-18
KR10-2014-0046563 2014-04-18
KR10-2014-0102139 2014-08-08
KR1020140102139A KR101537715B1 (ko) 2014-04-18 2014-08-08 메모리 소자

Publications (2)

Publication Number Publication Date
WO2015160092A2 WO2015160092A2 (ko) 2015-10-22
WO2015160092A3 true WO2015160092A3 (ko) 2017-05-18

Family

ID=54324673

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2015/002606 WO2015160092A2 (ko) 2014-04-18 2015-03-18 메모리 소자

Country Status (3)

Country Link
US (1) US10586919B2 (ko)
KR (1) KR101537715B1 (ko)
WO (1) WO2015160092A2 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107452869A (zh) * 2016-05-31 2017-12-08 上海磁宇信息科技有限公司 一种垂直型磁电阻元件及其制造工艺
KR102511914B1 (ko) 2016-08-04 2023-03-21 삼성전자주식회사 자기 기억 소자 및 이의 제조 방법
US10468592B1 (en) * 2018-07-09 2019-11-05 Applied Materials, Inc. Magnetic tunnel junctions and methods of fabrication thereof
US20220165950A1 (en) * 2019-01-29 2022-05-26 Industry-University Cooperation Foundation Hanyang University Selector device comprising polycrystalline metal oxide layer and cross-point memory comprising same
US11522126B2 (en) 2019-10-14 2022-12-06 Applied Materials, Inc. Magnetic tunnel junctions with protection layers
CN113346006B (zh) * 2020-03-02 2023-03-21 上海磁宇信息科技有限公司 磁性隧道结结构及其磁性随机存储器

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008085208A (ja) * 2006-09-28 2008-04-10 Fujitsu Ltd トンネル磁気抵抗素子、磁気ヘッドおよび磁気メモリ
JP2010129115A (ja) * 2008-11-26 2010-06-10 Showa Denko Kk 磁気記録媒体及びその製造方法並びに記憶装置
JP2012089858A (ja) * 2011-11-28 2012-05-10 Toshiba Corp 磁気抵抗効果素子、磁気メモリ、磁気抵抗効果ヘッド、および磁気記録再生装置
KR20140011138A (ko) * 2012-07-17 2014-01-28 삼성전자주식회사 자기 소자 및 그 제조 방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US22501A (en) * 1859-01-04 Cofeee-pot
US92502A (en) * 1869-07-13 Improvement in door-locks
US3000204A (en) * 1957-08-23 1961-09-19 Lisle W Menzimer Door control mechanism
US6911710B2 (en) * 2000-03-09 2005-06-28 Hewlett-Packard Development Company, L.P. Multi-bit magnetic memory cells
KR101040163B1 (ko) 2008-12-15 2011-06-09 한양대학교 산학협력단 다치화 구조를 갖는 ｓｔｔ-ｍｒａｍ 메모리 소자와 그 구동방법
TWI468715B (zh) * 2012-10-22 2015-01-11 Ind Tech Res Inst 用於感測外部磁場之磁場感測器
KR101549625B1 (ko) * 2014-04-18 2015-09-04 한양대학교 산학협력단 메모리 소자

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008085208A (ja) * 2006-09-28 2008-04-10 Fujitsu Ltd トンネル磁気抵抗素子、磁気ヘッドおよび磁気メモリ
JP2010129115A (ja) * 2008-11-26 2010-06-10 Showa Denko Kk 磁気記録媒体及びその製造方法並びに記憶装置
JP2012089858A (ja) * 2011-11-28 2012-05-10 Toshiba Corp 磁気抵抗効果素子、磁気メモリ、磁気抵抗効果ヘッド、および磁気記録再生装置
KR20140011138A (ko) * 2012-07-17 2014-01-28 삼성전자주식회사 자기 소자 및 그 제조 방법

Also Published As

Publication number Publication date
KR101537715B1 (ko) 2015-07-21
US10586919B2 (en) 2020-03-10
US20190229259A1 (en) 2019-07-25
WO2015160092A2 (ko) 2015-10-22

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