JP6565805B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6565805B2
JP6565805B2 JP2016127707A JP2016127707A JP6565805B2 JP 6565805 B2 JP6565805 B2 JP 6565805B2 JP 2016127707 A JP2016127707 A JP 2016127707A JP 2016127707 A JP2016127707 A JP 2016127707A JP 6565805 B2 JP6565805 B2 JP 6565805B2
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Japan
Prior art keywords
light
waveguide
waveguides
main waveguide
semiconductor device
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JP2016127707A
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English (en)
Japanese (ja)
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JP2018004754A (ja
JP2018004754A5 (enExample
Inventor
龍介 永尾
龍介 永尾
圭史 笹畑
圭史 笹畑
石村　栄太郎
栄太郎 石村
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2016127707A priority Critical patent/JP6565805B2/ja
Priority to US15/401,311 priority patent/US9804330B1/en
Priority to CN201710507493.1A priority patent/CN107546569B/zh
Publication of JP2018004754A publication Critical patent/JP2018004754A/ja
Publication of JP2018004754A5 publication Critical patent/JP2018004754A5/ja
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/125—Bends, branchings or intersections
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004—Combinations of two or more optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
    • G02B6/293—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
    • G02B6/29344—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means operating by modal interference or beating, i.e. of transverse modes, e.g. zero-gap directional coupler, MMI
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
    • G02B6/293—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
    • G02B6/29379—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means characterised by the function or use of the complete device
    • G02B6/2938—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means characterised by the function or use of the complete device for multiplexing or demultiplexing, i.e. combining or separating wavelengths, e.g. 1xN, NxM
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4056—Edge-emitting structures emitting light in more than one direction
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12035—Materials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12121—Laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/02—ASE (amplified spontaneous emission), noise; Reduction thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/0687—Stabilising the frequency of the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2022—Absorbing region or layer parallel to the active layer, e.g. to influence transverse modes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optical Integrated Circuits (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Couplings Of Light Guides (AREA)
JP2016127707A 2016-06-28 2016-06-28 半導体装置 Active JP6565805B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2016127707A JP6565805B2 (ja) 2016-06-28 2016-06-28 半導体装置
US15/401,311 US9804330B1 (en) 2016-06-28 2017-01-09 Semiconductor device
CN201710507493.1A CN107546569B (zh) 2016-06-28 2017-06-28 半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016127707A JP6565805B2 (ja) 2016-06-28 2016-06-28 半導体装置

Publications (3)

Publication Number Publication Date
JP2018004754A JP2018004754A (ja) 2018-01-11
JP2018004754A5 JP2018004754A5 (enExample) 2018-09-06
JP6565805B2 true JP6565805B2 (ja) 2019-08-28

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016127707A Active JP6565805B2 (ja) 2016-06-28 2016-06-28 半導体装置

Country Status (3)

Country Link
US (1) US9804330B1 (enExample)
JP (1) JP6565805B2 (enExample)
CN (1) CN107546569B (enExample)

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5394489A (en) * 1993-07-27 1995-02-28 At&T Corp. Wavelength division multiplexed optical communication transmitters
US6275317B1 (en) * 1998-03-10 2001-08-14 Agere Systems Optoelectronics Guardian Corp. Hybrid integration of a wavelength selectable laser source and optical amplifier/modulator
JP2002171023A (ja) * 2000-11-30 2002-06-14 Hitachi Ltd 集積化光素子及び半導体レーザモジュール並びに光送信機
JP3624863B2 (ja) * 2001-07-31 2005-03-02 日本電気株式会社 光半導体モジュールにおける素子配置
EP1436869B1 (en) * 2001-10-09 2016-06-01 Infinera Corporation Transmitter photonic integrated circuit
US7283694B2 (en) * 2001-10-09 2007-10-16 Infinera Corporation Transmitter photonic integrated circuits (TxPIC) and optical transport networks employing TxPICs
JP3887744B2 (ja) * 2002-03-06 2007-02-28 富士通株式会社 半導体光素子
JP2004152875A (ja) * 2002-10-29 2004-05-27 Nec Compound Semiconductor Devices Ltd 半導体レーザモジュール
US7424041B2 (en) * 2004-04-29 2008-09-09 Avago Technologies Fiber Ip Pte Ltd. Wide tuneable laser sources
US7277462B2 (en) * 2004-04-29 2007-10-02 Avago Technologies Fiber (Singapore) Pte. Ltd. Wide tuneable laser sources
JP4359252B2 (ja) * 2005-03-14 2009-11-04 株式会社日立製作所 波長可変半導体レーザ装置
JP4652995B2 (ja) * 2006-03-16 2011-03-16 古河電気工業株式会社 集積型半導体レーザ素子および半導体レーザモジュール
JP4253027B2 (ja) * 2006-11-21 2009-04-08 古河電気工業株式会社 光モジュール
JP2010219227A (ja) * 2009-03-16 2010-09-30 Nec Corp 波長可変レーザとその製造方法
US8102887B2 (en) * 2009-05-26 2012-01-24 Corning Incorporated Edge bonded optical packages
JP5306942B2 (ja) * 2009-08-21 2013-10-02 日本電信電話株式会社 半導体レーザ及び光モジュール
JP2011233829A (ja) * 2010-04-30 2011-11-17 Furukawa Electric Co Ltd:The 集積型半導体光素子および集積型半導体光素子モジュール
KR20120070836A (ko) * 2010-12-22 2012-07-02 한국전자통신연구원 다파장 광 발생 장치
JP5705803B2 (ja) * 2012-08-06 2015-04-22 古河電気工業株式会社 光集積素子の異常電流検知方法および光集積素子アセンブリ
JP6124731B2 (ja) * 2013-08-09 2017-05-10 三菱電機株式会社 波長モニタおよび光モジュール
JP6299170B2 (ja) * 2013-11-15 2018-03-28 住友大阪セメント株式会社 光導波路素子
JP6173206B2 (ja) * 2013-12-20 2017-08-02 三菱電機株式会社 光集積素子
US9952389B2 (en) * 2014-05-09 2018-04-24 National University Corporation University Of Fukui Multiplexer, image projection apparatus using the multiplexer and image projection system

Also Published As

Publication number Publication date
JP2018004754A (ja) 2018-01-11
CN107546569B (zh) 2019-07-26
US9804330B1 (en) 2017-10-31
CN107546569A (zh) 2018-01-05

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