JP2018004754A5 - - Google Patents

Download PDF

Info

Publication number
JP2018004754A5
JP2018004754A5 JP2016127707A JP2016127707A JP2018004754A5 JP 2018004754 A5 JP2018004754 A5 JP 2018004754A5 JP 2016127707 A JP2016127707 A JP 2016127707A JP 2016127707 A JP2016127707 A JP 2016127707A JP 2018004754 A5 JP2018004754 A5 JP 2018004754A5
Authority
JP
Japan
Prior art keywords
waveguides
layer
light absorption
present
disposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2016127707A
Other languages
English (en)
Japanese (ja)
Other versions
JP6565805B2 (ja
JP2018004754A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2016127707A priority Critical patent/JP6565805B2/ja
Priority claimed from JP2016127707A external-priority patent/JP6565805B2/ja
Priority to US15/401,311 priority patent/US9804330B1/en
Priority to CN201710507493.1A priority patent/CN107546569B/zh
Publication of JP2018004754A publication Critical patent/JP2018004754A/ja
Publication of JP2018004754A5 publication Critical patent/JP2018004754A5/ja
Application granted granted Critical
Publication of JP6565805B2 publication Critical patent/JP6565805B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2016127707A 2016-06-28 2016-06-28 半導体装置 Active JP6565805B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2016127707A JP6565805B2 (ja) 2016-06-28 2016-06-28 半導体装置
US15/401,311 US9804330B1 (en) 2016-06-28 2017-01-09 Semiconductor device
CN201710507493.1A CN107546569B (zh) 2016-06-28 2017-06-28 半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016127707A JP6565805B2 (ja) 2016-06-28 2016-06-28 半導体装置

Publications (3)

Publication Number Publication Date
JP2018004754A JP2018004754A (ja) 2018-01-11
JP2018004754A5 true JP2018004754A5 (enExample) 2018-09-06
JP6565805B2 JP6565805B2 (ja) 2019-08-28

Family

ID=60142671

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016127707A Active JP6565805B2 (ja) 2016-06-28 2016-06-28 半導体装置

Country Status (3)

Country Link
US (1) US9804330B1 (enExample)
JP (1) JP6565805B2 (enExample)
CN (1) CN107546569B (enExample)

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5394489A (en) * 1993-07-27 1995-02-28 At&T Corp. Wavelength division multiplexed optical communication transmitters
US6275317B1 (en) * 1998-03-10 2001-08-14 Agere Systems Optoelectronics Guardian Corp. Hybrid integration of a wavelength selectable laser source and optical amplifier/modulator
JP2002171023A (ja) * 2000-11-30 2002-06-14 Hitachi Ltd 集積化光素子及び半導体レーザモジュール並びに光送信機
JP3624863B2 (ja) * 2001-07-31 2005-03-02 日本電気株式会社 光半導体モジュールにおける素子配置
AU2002342020A1 (en) * 2001-10-09 2003-04-22 Infinera Corporation Transmitter photonic integrated circuit
WO2003032021A2 (en) * 2001-10-09 2003-04-17 Infinera Corporation TRANSMITTER PHOTONIC INTEGRATED CIRCUITS (TxPIC) AND OPTICAL TRANSPORT NETWORKS EMPLOYING TxPICs
JP3887744B2 (ja) * 2002-03-06 2007-02-28 富士通株式会社 半導体光素子
JP2004152875A (ja) * 2002-10-29 2004-05-27 Nec Compound Semiconductor Devices Ltd 半導体レーザモジュール
US7424041B2 (en) * 2004-04-29 2008-09-09 Avago Technologies Fiber Ip Pte Ltd. Wide tuneable laser sources
US7277462B2 (en) * 2004-04-29 2007-10-02 Avago Technologies Fiber (Singapore) Pte. Ltd. Wide tuneable laser sources
JP4359252B2 (ja) * 2005-03-14 2009-11-04 株式会社日立製作所 波長可変半導体レーザ装置
JP4652995B2 (ja) * 2006-03-16 2011-03-16 古河電気工業株式会社 集積型半導体レーザ素子および半導体レーザモジュール
JP4253027B2 (ja) * 2006-11-21 2009-04-08 古河電気工業株式会社 光モジュール
JP2010219227A (ja) * 2009-03-16 2010-09-30 Nec Corp 波長可変レーザとその製造方法
US8102887B2 (en) * 2009-05-26 2012-01-24 Corning Incorporated Edge bonded optical packages
JP5306942B2 (ja) * 2009-08-21 2013-10-02 日本電信電話株式会社 半導体レーザ及び光モジュール
JP2011233829A (ja) * 2010-04-30 2011-11-17 Furukawa Electric Co Ltd:The 集積型半導体光素子および集積型半導体光素子モジュール
KR20120070836A (ko) * 2010-12-22 2012-07-02 한국전자통신연구원 다파장 광 발생 장치
JP5705803B2 (ja) * 2012-08-06 2015-04-22 古河電気工業株式会社 光集積素子の異常電流検知方法および光集積素子アセンブリ
JP6124731B2 (ja) * 2013-08-09 2017-05-10 三菱電機株式会社 波長モニタおよび光モジュール
JP6299170B2 (ja) * 2013-11-15 2018-03-28 住友大阪セメント株式会社 光導波路素子
JP6173206B2 (ja) * 2013-12-20 2017-08-02 三菱電機株式会社 光集積素子
CN110501784B (zh) * 2014-05-09 2021-01-12 国立大学法人福井大学 合波器、图像投影装置和图像投影系统

Similar Documents

Publication Publication Date Title
JP2020515880A5 (enExample)
JP6289401B2 (ja) スポットサイズ変換器
JP2016033978A5 (enExample)
JP2013080126A (ja) 偏波保持マルチコア光ファイバ
WO2016007867A3 (en) Multichannel coherent transceiver and related apparatus and methods
DE60129227D1 (de) Halbleiterlaserbauelement und verfahren zu seiner herstellung
JP2018040925A (ja) 光ファイバ搭載光集積回路装置
JP2017173593A5 (enExample)
JP2017026874A5 (enExample)
JP2015102687A (ja) マルチコアファイバ
JP2010165759A5 (ja) 集積光デバイス及びその製造方法
JP2011221194A5 (enExample)
KR20150015256A (ko) 가요성 표시 장치
WO2018096099A3 (de) Optoelektronische bauelemente und verfahren zum herstellen eines optoelektronischen bauelementes
JP2018004754A5 (enExample)
US20140341500A1 (en) Polarizing splitter and method for manufacturing same
JP2009004488A5 (enExample)
US20140169739A1 (en) Waveguide lens for coupling laser light source and optical element
JP6712718B2 (ja) 光導波路
JP2015200785A5 (enExample)
JP2016154203A5 (enExample)
CN103901559B (zh) 光耦合装置
WO2017067018A1 (zh) 一种柔性板
JP4560479B2 (ja) 多モード光干渉デバイスの製造方法
US20160377809A1 (en) Optical Edge Coupling With A Separate Trimmed Taper