JP6542761B2 - 混合研磨材の研磨組成物 - Google Patents

混合研磨材の研磨組成物 Download PDF

Info

Publication number
JP6542761B2
JP6542761B2 JP2016521703A JP2016521703A JP6542761B2 JP 6542761 B2 JP6542761 B2 JP 6542761B2 JP 2016521703 A JP2016521703 A JP 2016521703A JP 2016521703 A JP2016521703 A JP 2016521703A JP 6542761 B2 JP6542761 B2 JP 6542761B2
Authority
JP
Japan
Prior art keywords
polishing composition
particles
chemical mechanical
abrasive particles
polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016521703A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016538359A (ja
JP2016538359A5 (enExample
Inventor
ライス ブライアン
ライス ブライアン
ナラスコウスキー ヤクブ
ナラスコウスキー ヤクブ
ラム ビエット
ラム ビエット
ジア レンヘ
ジア レンヘ
ディザード ジェフリー
ディザード ジェフリー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of JP2016538359A publication Critical patent/JP2016538359A/ja
Publication of JP2016538359A5 publication Critical patent/JP2016538359A5/ja
Application granted granted Critical
Publication of JP6542761B2 publication Critical patent/JP6542761B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2016521703A 2013-10-10 2014-09-30 混合研磨材の研磨組成物 Active JP6542761B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/051,121 US9340706B2 (en) 2013-10-10 2013-10-10 Mixed abrasive polishing compositions
US14/051,121 2013-10-10
PCT/US2014/058268 WO2015053985A1 (en) 2013-10-10 2014-09-30 Mixed abrasive polishing compositions

Publications (3)

Publication Number Publication Date
JP2016538359A JP2016538359A (ja) 2016-12-08
JP2016538359A5 JP2016538359A5 (enExample) 2017-11-09
JP6542761B2 true JP6542761B2 (ja) 2019-07-10

Family

ID=52808764

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016521703A Active JP6542761B2 (ja) 2013-10-10 2014-09-30 混合研磨材の研磨組成物

Country Status (7)

Country Link
US (1) US9340706B2 (enExample)
EP (2) EP3055376B1 (enExample)
JP (1) JP6542761B2 (enExample)
KR (1) KR102289577B1 (enExample)
CN (1) CN105814163B (enExample)
TW (1) TWI516582B (enExample)
WO (1) WO2015053985A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230161219A (ko) * 2022-05-18 2023-11-27 주식회사 케이씨텍 실리콘 웨이퍼 연마용 슬러리 조성물

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9303187B2 (en) * 2013-07-22 2016-04-05 Cabot Microelectronics Corporation Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials
JP6723995B2 (ja) * 2014-10-21 2020-07-15 キャボット マイクロエレクトロニクス コーポレイション コバルトディッシング制御剤
EP3323142B1 (en) * 2015-07-13 2024-08-28 CMC Materials LLC Methods and compositions for processing dielectric substrate
US10128146B2 (en) * 2015-08-20 2018-11-13 Globalwafers Co., Ltd. Semiconductor substrate polishing methods and slurries and methods for manufacturing silicon on insulator structures
EP3344716A4 (en) * 2015-09-03 2019-04-10 Cabot Microelectronics Corporation METHODS AND COMPOSITIONS FOR TREATING DIELECTRIC SUBSTRATE
WO2018075409A2 (en) * 2016-10-17 2018-04-26 Cabot Microelectronics Corporation Cmp compositions selective for oxide and nitride with improved dishing and pattern selectivity
US9783702B1 (en) 2016-10-19 2017-10-10 Rohm And Haas Electronic Materials Cmp Holdings Inc. Aqueous compositions of low abrasive silica particles
WO2018179061A1 (ja) 2017-03-27 2018-10-04 日立化成株式会社 研磨液、研磨液セット及び研磨方法
CN110462791B (zh) 2017-03-27 2023-06-16 株式会社力森诺科 悬浮液和研磨方法
CN113637412A (zh) * 2017-04-17 2021-11-12 嘉柏微电子材料股份公司 自停止性抛光组合物及用于块状氧化物平坦化的方法
CN109251675B (zh) * 2017-07-13 2021-07-30 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
US10584265B2 (en) * 2017-09-28 2020-03-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous silica slurry and amine carboxylic acid compositions selective for nitride removal in polishing and methods of using them
US10584266B2 (en) * 2018-03-14 2020-03-10 Cabot Microelectronics Corporation CMP compositions containing polymer complexes and agents for STI applications
WO2019182061A1 (ja) * 2018-03-22 2019-09-26 日立化成株式会社 研磨液、研磨液セット及び研磨方法
JP6973620B2 (ja) 2018-03-22 2021-12-01 昭和電工マテリアルズ株式会社 研磨液、研磨液セット及び研磨方法
WO2020021680A1 (ja) 2018-07-26 2020-01-30 日立化成株式会社 スラリ及び研磨方法
KR102382508B1 (ko) 2018-09-25 2022-04-01 쇼와덴코머티리얼즈가부시끼가이샤 슬러리 및 연마 방법
US10988635B2 (en) 2018-12-04 2021-04-27 Cmc Materials, Inc. Composition and method for copper barrier CMP
KR102241941B1 (ko) 2018-12-28 2021-04-20 주식회사 케이씨텍 다결정 실리콘 연마용 cmp 슬러리 조성물 및 그를 이용한 연마 방법
US11326076B2 (en) 2019-01-25 2022-05-10 Versum Materials Us, Llc Shallow trench isolation (STI) chemical mechanical planarization (CMP) polishing with low abrasive concentration and a combination of chemical additives
US20200303198A1 (en) * 2019-03-22 2020-09-24 Fujimi Incorporated Polishing composition and polishing method
KR102453292B1 (ko) * 2020-07-07 2022-10-12 주식회사 나노신소재 산화세륨 복합분말의 분산 조성물
US20220017781A1 (en) * 2020-07-20 2022-01-20 Cmc Materials, Inc. Silicon wafer polishing composition and method
US12116502B2 (en) * 2020-12-21 2024-10-15 Cmc Materials Llc Self-stopping polishing composition and method for high topological selectivity
CN114686108A (zh) * 2020-12-30 2022-07-01 安集微电子（上海）有限公司 一种用于钨抛光的化学机械抛光液
JP7697788B2 (ja) * 2021-01-08 2025-06-24 株式会社フジミインコーポレーテッド 二酸化ケイ素膜及び窒化ケイ素膜研磨用の研磨用組成物、二酸化ケイ素膜及び窒化ケイ素膜研磨用の研磨用組成物の製造方法、研磨方法
JP7569717B2 (ja) * 2021-03-09 2024-10-18 花王株式会社 酸化珪素膜用研磨液組成物
KR102396281B1 (ko) * 2021-04-14 2022-05-10 성균관대학교산학협력단 연마용 조성물 및 이의 제조방법
US20220332977A1 (en) * 2021-04-16 2022-10-20 Entegris, Inc. Cmp compositions for polishing dielectric materials
KR102620964B1 (ko) * 2021-07-08 2024-01-03 에스케이엔펄스 주식회사 반도체 공정용 연마 조성물 및 이를 이용한 연마된 물품의 제조방법

Family Cites Families (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5196353A (en) 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
US6614529B1 (en) 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5658183A (en) 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5433651A (en) 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JPH07223166A (ja) * 1994-02-10 1995-08-22 Tokyo Jiki Insatsu Kk 研磨フィルム
JP3270282B2 (ja) 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
JP3313505B2 (ja) 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
JP3416855B2 (ja) 1994-04-15 2003-06-16 株式会社フジミインコーポレーテッド 研磨用組成物および研磨方法
US5964643A (en) 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5893796A (en) 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5838447A (en) 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
US5872633A (en) 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
US6602439B1 (en) 1997-02-24 2003-08-05 Superior Micropowders, Llc Chemical-mechanical planarization slurries and powders and methods for using same
US5896870A (en) * 1997-03-11 1999-04-27 International Business Machines Corporation Method of removing slurry particles
US6093649A (en) 1998-08-07 2000-07-25 Rodel Holdings, Inc. Polishing slurry compositions capable of providing multi-modal particle packing and methods relating thereto
US5942015A (en) * 1997-09-16 1999-08-24 3M Innovative Properties Company Abrasive slurries and abrasive articles comprising multiple abrasive particle grades
US6143662A (en) 1998-02-18 2000-11-07 Rodel Holdings, Inc. Chemical mechanical polishing composition and method of polishing a substrate
US6358853B2 (en) 1998-09-10 2002-03-19 Intel Corporation Ceria based slurry for chemical-mechanical polishing
US6270395B1 (en) 1998-09-24 2001-08-07 Alliedsignal, Inc. Oxidizing polishing slurries for low dielectric constant materials
US6368955B1 (en) * 1999-11-22 2002-04-09 Lucent Technologies, Inc. Method of polishing semiconductor structures using a two-step chemical mechanical planarization with slurry particles having different particle bulk densities
JP2001192645A (ja) * 2000-01-14 2001-07-17 Asahi Kasei Corp 半導体装置製造用の研磨用組成物
JP4123685B2 (ja) 2000-05-18 2008-07-23 Ｊｓｒ株式会社 化学機械研磨用水系分散体
US6443811B1 (en) * 2000-06-20 2002-09-03 Infineon Technologies Ag Ceria slurry solution for improved defect control of silicon dioxide chemical-mechanical polishing
JP2002110596A (ja) 2000-10-02 2002-04-12 Mitsubishi Electric Corp 半導体加工用研磨剤およびこれに用いる分散剤、並びに上記半導体加工用研磨剤を用いた半導体装置の製造方法
TWI281493B (en) * 2000-10-06 2007-05-21 Mitsui Mining & Smelting Co Polishing material
US20040192172A1 (en) 2001-06-14 2004-09-30 Dan Towery Oxidizing polishing slurries for low dielectric constant materials
US6638328B1 (en) 2002-04-25 2003-10-28 Taiwan Semiconductor Manufacturing Co. Ltd Bimodal slurry system
US7071105B2 (en) 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
US6896591B2 (en) * 2003-02-11 2005-05-24 Cabot Microelectronics Corporation Mixed-abrasive polishing composition and method for using the same
JP2004319759A (ja) * 2003-04-16 2004-11-11 Hitachi Chem Co Ltd 金属用研磨液及び研磨方法
CN1849379B (zh) * 2003-07-11 2011-12-14 格雷斯公司 用于化学机械抛光的磨料颗粒
US20050092620A1 (en) * 2003-10-01 2005-05-05 Applied Materials, Inc. Methods and apparatus for polishing a substrate
TWI334882B (en) * 2004-03-12 2010-12-21 K C Tech Co Ltd Polishing slurry and method of producing same
IL161771A0 (en) * 2004-05-04 2005-11-20 J G Systems Inc Method and composition to minimize dishing in semiconductor wafer processing
US7368388B2 (en) * 2005-04-15 2008-05-06 Small Robert J Cerium oxide abrasives for chemical mechanical polishing
CN102965025B (zh) * 2005-11-11 2014-10-29 日立化成株式会社 氧化硅用研磨剂、其用途以及研磨方法
JP2007266500A (ja) * 2006-03-29 2007-10-11 Toshiba Corp タッチアップｃｍｐ用スラリーおよび半導体装置の製造方法
JP2007273910A (ja) * 2006-03-31 2007-10-18 Fujifilm Corp 研磨用組成液
US8167684B2 (en) * 2006-10-24 2012-05-01 Cabot Microelectronics Corporation Chemical mechanical polishing slurry, its preparation method, and use for the same
US20080274618A1 (en) * 2007-05-04 2008-11-06 Ferro Corporation Polishing composition and method for high selectivity polysilicon cmp
CN101463227B (zh) * 2007-12-21 2013-06-12 安集微电子（上海）有限公司 一种用于阻挡层抛光的化学机械抛光液
JP5396047B2 (ja) * 2008-09-03 2014-01-22 三井金属鉱業株式会社 ガラス用研摩材スラリー
US8409990B2 (en) * 2008-09-12 2013-04-02 Ferro Corporation Chemical-mechanical polishing compositions and methods of making and using the same
KR101084676B1 (ko) 2008-12-03 2011-11-22 주식회사 엘지화학 1차 화학적 기계적 연마용 슬러리 조성물 및 화학적 기계적 연마 방법
KR101075491B1 (ko) 2009-01-16 2011-10-21 주식회사 하이닉스반도체 반도체 소자의 제조방법
KR20100091436A (ko) * 2009-02-10 2010-08-19 삼성전자주식회사 화학적 기계적 연마용 용액 조성물
US8883034B2 (en) * 2009-09-16 2014-11-11 Brian Reiss Composition and method for polishing bulk silicon
JP5568641B2 (ja) * 2009-10-13 2014-08-06 エルジー・ケム・リミテッド Ｃｍｐ用スラリー組成物及び研磨方法
MY161863A (en) 2009-11-13 2017-05-15 Basf Se A chemical mechanical polishing (cmp) composition comprising inorganic particles and polymer particles
US8858819B2 (en) 2010-02-15 2014-10-14 Air Products And Chemicals, Inc. Method for chemical mechanical planarization of a tungsten-containing substrate
JP2012182299A (ja) * 2011-03-01 2012-09-20 Hitachi Chem Co Ltd 半導体基板用研磨液及び半導体基板の研磨方法
CN104081501B (zh) * 2012-02-10 2019-02-01 巴斯夫欧洲公司 包含蛋白质的化学机械抛光(cmp)组合物
US8859428B2 (en) * 2012-10-19 2014-10-14 Air Products And Chemicals, Inc. Chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) applications and methods of making thereof
US8974692B2 (en) * 2013-06-27 2015-03-10 Air Products And Chemicals, Inc. Chemical mechanical polishing slurry compositions and method using the same for copper and through-silicon via applications

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230161219A (ko) * 2022-05-18 2023-11-27 주식회사 케이씨텍 실리콘 웨이퍼 연마용 슬러리 조성물

Also Published As

Publication number Publication date
EP3470487A1 (en) 2019-04-17
CN105814163A (zh) 2016-07-27
TWI516582B (zh) 2016-01-11
WO2015053985A1 (en) 2015-04-16
TW201518492A (zh) 2015-05-16
EP3055376B1 (en) 2019-01-16
KR102289577B1 (ko) 2021-08-13
EP3470487B1 (en) 2021-01-20
EP3055376A1 (en) 2016-08-17
US9340706B2 (en) 2016-05-17
US20150102012A1 (en) 2015-04-16
CN105814163B (zh) 2017-12-08
EP3055376A4 (en) 2017-05-10
KR20160070094A (ko) 2016-06-17
JP2016538359A (ja) 2016-12-08

Similar Documents

Publication Publication Date Title
JP6542761B2 (ja) 混合研磨材の研磨組成物
KR102889330B1 (ko) 양이온성 중합체 첨가제를 포함하는 연마 조성물
US10414947B2 (en) Polishing composition containing ceria particles and method of use
TWI765140B (zh) 用於sti應用之cmp組合物
CN105229110B (zh) 具有高的移除速率和低的缺陷率的对于氧化物和氮化物有选择性的化学机械抛光组合物
JP2018534379A (ja) 改善された安定性及び改善された研磨特性を有する、選択的窒化物スラリー
TWI878613B (zh) 用於碳基薄膜之選擇性拋光之以二氧化矽為主的漿料
TW201829676A (zh) 具有改善之凹陷及圖案選擇性之對氧化物及氮化物有選擇性之cmp組成物
CN108473850A (zh) 低k基板的抛光方法
CN118804960A (zh) 用于硅氧化物、硅氮化物及多晶硅的选择性及非选择性cmp的以氧化铈为主的浆料组合物
CN117120563A (zh) 用于高形貌选择性的自停止性抛光组合物与方法
TWI899534B (zh) 用於矽氧化物、矽氮化物及多晶矽的選擇性及非選擇性cmp之基於氧化鈰的漿料組合物
CN118829699A (zh) 用于硅氧化物、硅氮化物和多晶硅的选择性和非选择性cmp的基于氧化铈的浆料组合物

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170926

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170926

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20180808

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20180814

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20181113

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20181211

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190405

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20190415

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20190514

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20190613

R150 Certificate of patent or registration of utility model

Ref document number: 6542761

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250