JP6536024B2 - 半導体デバイスの製造方法及び半導体デバイス - Google Patents
半導体デバイスの製造方法及び半導体デバイス Download PDFInfo
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- JP6536024B2 JP6536024B2 JP2014245508A JP2014245508A JP6536024B2 JP 6536024 B2 JP6536024 B2 JP 6536024B2 JP 2014245508 A JP2014245508 A JP 2014245508A JP 2014245508 A JP2014245508 A JP 2014245508A JP 6536024 B2 JP6536024 B2 JP 6536024B2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- Wire Bonding (AREA)
- Dicing (AREA)
Description
図1は、第1実施形態に係る半導体デバイスの製造方法を示すフローチャートであり、図2〜図8は、第1実施形態に係る半導体デバイスの製造方法を模式的に示す工程図である。
第2実施形態では、第1実施形態と同様に接着剤層形成工程及び電極露出工程を行う。
図9〜図13は、第2実施形態に係る半導体デバイスの製造方法を模式的に示す工程図である。
第3実施形態では、第1実施形態と同様に接着剤層形成工程及び電極露出工程を行う。
Claims (6)
- 電極を有する第一の半導体ウェハの、電極を有する面に接着剤層を形成する接着剤層形成工程と、
前記第一の半導体ウェハの電極上の前記接着剤層の少なくとも一部を除去して、前記半導体ウェハの電極の少なくとも一部を露出させる電極露出工程と、
前記第一の半導体ウェハを個片化して、第一の半導体チップを得る個片化工程と、
前記第一の半導体チップの、少なくとも一部が露出した電極を、電極を有する第二の半導体ウェハの電極に対して加熱圧着し、積層体を得る加熱圧着工程と、
前記積層体をリフロー炉に投入し、前記積層体を押圧しない状態でリフローするリフロー工程と、を備える、半導体デバイスの製造方法。 - 電極を有する第一の半導体ウェハの、電極を有する面に接着剤層を形成する接着剤層形成工程と、
前記第一の半導体ウェハの電極上の前記接着剤層の少なくとも一部を除去して、前記半導体ウェハの電極の少なくとも一部を露出させる電極露出工程と、
前記第一の半導体ウェハの、少なくとも一部が露出した電極を、電極を有する第二の半導体ウェハの電極に対して加熱圧着し、積層体を得る加熱圧着工程と、
前記積層体をリフロー炉に投入し、前記積層体を押圧しない状態でリフローするリフロー工程と、を備える、半導体デバイスの製造方法。 - 前記加熱圧着工程における加熱圧着の温度が、200℃以下である、請求項1又は2に記載の半導体デバイスの製造方法。
- 前記リフロー工程におけるリフローの温度が、240℃以上である、請求項1〜3のいずれか一項に記載の半導体デバイスの製造方法。
- 前記接着剤層が、露光によってパターン形成が可能な感光性樹脂で形成されてなる、請求項1〜4のいずれか一項に記載の半導体デバイスの製造方法。
- 前記電極露出工程では、前記接着剤層を露光及び現像することにより、前記接着剤層の少なくとも一部を除去する、請求項5に記載の半導体デバイスの製造方法。
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JP3094948B2 (ja) * | 1997-05-26 | 2000-10-03 | 日本電気株式会社 | 半導体素子搭載用回路基板とその半導体素子との接続方法 |
JP2004200195A (ja) * | 2002-12-16 | 2004-07-15 | Seiko Epson Corp | 半導体装置および半導体装置の製造方法 |
JP4279786B2 (ja) * | 2002-12-27 | 2009-06-17 | 富士通株式会社 | バンプの形成方法、半導体装置の製造方法、及び基板処理装置 |
JP2006237280A (ja) * | 2005-02-25 | 2006-09-07 | Sony Corp | 半導体装置及びその製造方法 |
JP2012074636A (ja) * | 2010-09-29 | 2012-04-12 | Sumitomo Bakelite Co Ltd | 接合方法、半導体装置、多層回路基板および電子部品 |
JP6136101B2 (ja) * | 2012-04-10 | 2017-05-31 | 日立化成株式会社 | 感光性樹脂組成物、フィルム状樹脂、樹脂シート、樹脂パターン、樹脂層付半導体ウェハ、樹脂層付透明基板、半導体装置及び半導体装置の製造方法 |
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