JP6521988B2 - ウェハノッチの検出 - Google Patents

ウェハノッチの検出 Download PDF

Info

Publication number
JP6521988B2
JP6521988B2 JP2016551197A JP2016551197A JP6521988B2 JP 6521988 B2 JP6521988 B2 JP 6521988B2 JP 2016551197 A JP2016551197 A JP 2016551197A JP 2016551197 A JP2016551197 A JP 2016551197A JP 6521988 B2 JP6521988 B2 JP 6521988B2
Authority
JP
Japan
Prior art keywords
wafer
notch
detection module
image
notch detection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016551197A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017508285A (ja
JP2017508285A5 (enExample
Inventor
ボリス エフラティ
ボリス エフラティ
ナシム ビシャラ
ナシム ビシャラ
アルカディ シムキン
アルカディ シムキン
ヤロン イシュ−シャロム
ヤロン イシュ−シャロム
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KLA Corp
Original Assignee
KLA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KLA Corp filed Critical KLA Corp
Publication of JP2017508285A publication Critical patent/JP2017508285A/ja
Publication of JP2017508285A5 publication Critical patent/JP2017508285A5/ja
Application granted granted Critical
Publication of JP6521988B2 publication Critical patent/JP6521988B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H10P72/53—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment using optical controlling means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/002—Measuring arrangements characterised by the use of optical techniques for measuring two or more coordinates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T3/00—Geometric image transformations in the plane of the image
    • G06T3/20—Linear translation of whole images or parts thereof, e.g. panning
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/60—Analysis of geometric attributes
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V10/00—Arrangements for image or video recognition or understanding
    • G06V10/40—Extraction of image or video features
    • G06V10/42—Global feature extraction by analysis of the whole pattern, e.g. using frequency domain transformations or autocorrelation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/201—Marks applied to devices, e.g. for alignment or identification located on the periphery of wafers, e.g. orientation notches or lot numbers
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/20—Special algorithmic details
    • G06T2207/20048—Transform domain processing
    • G06T2207/20056—Discrete and fast Fourier transform, [DFT, FFT]
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Pathology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Chemical & Material Sciences (AREA)
  • Geometry (AREA)
  • Quality & Reliability (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Image Processing (AREA)
JP2016551197A 2014-02-12 2015-02-10 ウェハノッチの検出 Active JP6521988B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201461939131P 2014-02-12 2014-02-12
US61/939,131 2014-02-12
PCT/US2015/015270 WO2015123222A1 (en) 2014-02-12 2015-02-10 Wafer notch detection

Publications (3)

Publication Number Publication Date
JP2017508285A JP2017508285A (ja) 2017-03-23
JP2017508285A5 JP2017508285A5 (enExample) 2018-03-22
JP6521988B2 true JP6521988B2 (ja) 2019-05-29

Family

ID=53800566

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016551197A Active JP6521988B2 (ja) 2014-02-12 2015-02-10 ウェハノッチの検出

Country Status (6)

Country Link
US (1) US10366483B2 (enExample)
JP (1) JP6521988B2 (enExample)
KR (1) KR102175021B1 (enExample)
CN (1) CN106030772B (enExample)
TW (1) TWI649553B (enExample)
WO (1) WO2015123222A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10354373B2 (en) * 2017-04-26 2019-07-16 Kla-Tencor Corporation System and method for photomask alignment and orientation characterization based on notch detection
US11929277B2 (en) * 2019-09-06 2024-03-12 Kabushiki Kaisha Yaskawa Denki Wafer pre-aligner and method of pre-aligning wafer
CN120543484A (zh) * 2025-05-06 2025-08-26 东方晶源微电子科技(北京)股份有限公司 晶圆缺口顶点位置的确定方法、装置、设备、介质及产品

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5381004A (en) 1993-08-31 1995-01-10 Applied Materials, Inc. Particle analysis of notched wafers
US5825913A (en) * 1995-07-18 1998-10-20 Cognex Corporation System for finding the orientation of a wafer
JPH11121589A (ja) * 1997-10-09 1999-04-30 Nikon Corp 搬送方法および搬送装置、および露光装置
JPH11317439A (ja) * 1998-05-01 1999-11-16 Nec Corp 位置決め装置
JP2000031245A (ja) * 1998-07-08 2000-01-28 Kobe Steel Ltd ウェーハノッチ位置検出装置
US6559457B1 (en) * 2000-03-23 2003-05-06 Advanced Micro Devices, Inc. System and method for facilitating detection of defects on a wafer
US20050174583A1 (en) 2000-07-06 2005-08-11 Chalmers Scott A. Method and apparatus for high-speed thickness mapping of patterned thin films
US6327517B1 (en) 2000-07-27 2001-12-04 Applied Materials, Inc. Apparatus for on-the-fly center finding and notch aligning for wafer handling robots
US6992482B2 (en) * 2000-11-08 2006-01-31 Jentek Sensors, Inc. Magnetic field sensor having a switchable drive current spatial distribution
US6440821B1 (en) 2001-02-14 2002-08-27 Advanced Micro Devices, Inc. Method and apparatus for aligning wafers
JP2002280287A (ja) 2001-03-19 2002-09-27 Nikon Corp 位置検出方法、位置検出装置、露光方法、露光装置、及びデバイス製造方法
JP4947248B2 (ja) 2001-09-14 2012-06-06 Ｄｏｗａエレクトロニクス株式会社 ノッチ付き化合物半導体ウエハ
US6784071B2 (en) 2003-01-31 2004-08-31 Taiwan Semiconductor Manufacturing Company, Ltd. Bonded SOI wafer with <100> device layer and <110> substrate for performance improvement
WO2005008735A2 (en) 2003-07-14 2005-01-27 August Technology Corporation Photoresist edge bead removal measurement
US7280200B2 (en) 2003-07-18 2007-10-09 Ade Corporation Detection of a wafer edge using collimated light
JP4296885B2 (ja) * 2003-09-17 2009-07-15 オムロン株式会社 円形物におけるマーク検出方法、ノッチ検出方法、半導体ウェーハの向き検査方法、および半導体ウェーハの向き検査装置
JP4522360B2 (ja) * 2005-12-02 2010-08-11 日東電工株式会社 半導体ウエハの位置決定方法およびこれを用いた装置
WO2008136423A1 (ja) 2007-04-27 2008-11-13 Shibaura Mechatronics Corporation 半導体ウェーハ処理装置、基準角度位置検出方法及び半導体ウェーハ
JP5066393B2 (ja) * 2007-06-06 2012-11-07 株式会社日立ハイテクノロジーズ 異物・欠陥検査・観察システム
JP2009096698A (ja) 2007-10-19 2009-05-07 Toshiba Corp ウェーハ及びその製造方法
DE102008002753B4 (de) * 2007-12-19 2010-03-25 Vistec Semiconductor Systems Gmbh Verfahren zur optischen Inspektion, Detektion und Visualisierung von Defekten auf scheibenförmigen Objekten
JP5469839B2 (ja) 2008-09-30 2014-04-16 株式会社日立ハイテクノロジーズ 物体表面の欠陥検査装置および方法
US8334520B2 (en) * 2008-10-24 2012-12-18 Hitachi High-Technologies Corporation Charged particle beam apparatus
JP5477133B2 (ja) * 2010-04-09 2014-04-23 日新イオン機器株式会社 ウェーハハンドリング方法およびイオン注入装置
JP5534926B2 (ja) 2010-05-06 2014-07-02 リンテック株式会社 位置検出装置及びこれを用いたアライメント装置
CN102347224B (zh) * 2010-08-02 2015-08-26 北京中科信电子装备有限公司 一种注入机用晶片缺口定位装置

Also Published As

Publication number Publication date
CN106030772A (zh) 2016-10-12
JP2017508285A (ja) 2017-03-23
KR20160120309A (ko) 2016-10-17
TW201534895A (zh) 2015-09-16
US10366483B2 (en) 2019-07-30
US20160086325A1 (en) 2016-03-24
KR102175021B1 (ko) 2020-11-06
CN106030772B (zh) 2020-04-14
TWI649553B (zh) 2019-02-01
WO2015123222A1 (en) 2015-08-20

Similar Documents

Publication Publication Date Title
US8649593B2 (en) Image processing apparatus, image processing method, and program
JP2021184307A (ja) ビジョンシステムでラインを検出するためのシステム及び方法
US10529076B2 (en) Image processing apparatus and image processing method
JP2023120281A (ja) ビジョンシステムでラインを検出するためのシステム及び方法
WO2015014111A1 (zh) 一种光流跟踪方法和装置
WO2015037178A1 (ja) 姿勢推定方法及びロボット
JP2013213769A (ja) 画像処理装置、画像処理方法及びプログラム
US11512946B2 (en) Method and system for automatic focusing for high-resolution structured light 3D imaging
KR102173244B1 (ko) Surf 특징점 추적 기반 영상 안정화 시스템
JP4941565B2 (ja) 対応点探索装置および対応点探索方法
WO2018163529A1 (ja) ３次元形状計測装置、３次元形状計測方法、およびプログラム
US10366483B2 (en) Wafer notch detection
JP6954451B2 (ja) 振動計測システム、振動計測装置、振動計測方法、及びプログラム
WO2019058487A1 (ja) ３次元復元画像処理装置、３次元復元画像処理方法及び３次元復元画像処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体
JP4877243B2 (ja) 対応点探索装置および該方法
WO2019097576A1 (ja) 計測システム、補正処理装置、補正処理方法、及びコンピュータ読み取り可能な記録媒体
CN104937608A (zh) 道路区域检测
KR20120094102A (ko) 유사도 산출 디바이스, 유사도 산출 방법 및 프로그램
JP4101478B2 (ja) 人体端点検出方法及び装置
JP4694624B2 (ja) 画像補正装置及び方法、並びにコンピュータプログラム
Georgiev et al. A fast and accurate re-calibration technique for misaligned stereo cameras
JPWO2018051492A1 (ja) オプティカルフロー精度算出装置およびオプティカルフロー精度算出方法
JP4887820B2 (ja) 画像位置計測方法、画像位置計測装置および画像位置計測プログラム
JP5355377B2 (ja) 画像パターン照合装置および方法
CN102110292A (zh) 一种虚拟体育中的变焦镜头标定方法及装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180208

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20180208

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20181212

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20190108

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190404

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20190416

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20190423

R150 Certificate of patent or registration of utility model

Ref document number: 6521988

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250