JP6521988B2 - ウェハノッチの検出 - Google Patents

ウェハノッチの検出 Download PDF

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Publication number
JP6521988B2
JP6521988B2 JP2016551197A JP2016551197A JP6521988B2 JP 6521988 B2 JP6521988 B2 JP 6521988B2 JP 2016551197 A JP2016551197 A JP 2016551197A JP 2016551197 A JP2016551197 A JP 2016551197A JP 6521988 B2 JP6521988 B2 JP 6521988B2
Authority
JP
Japan
Prior art keywords
wafer
notch
detection module
image
notch detection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016551197A
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English (en)
Japanese (ja)
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JP2017508285A5 (enExample
JP2017508285A (ja
Inventor
ボリス エフラティ
ボリス エフラティ
ナシム ビシャラ
ナシム ビシャラ
アルカディ シムキン
アルカディ シムキン
ヤロン イシュ−シャロム
ヤロン イシュ−シャロム
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KLA Corp
Original Assignee
KLA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KLA Corp filed Critical KLA Corp
Publication of JP2017508285A publication Critical patent/JP2017508285A/ja
Publication of JP2017508285A5 publication Critical patent/JP2017508285A5/ja
Application granted granted Critical
Publication of JP6521988B2 publication Critical patent/JP6521988B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/681Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/002Measuring arrangements characterised by the use of optical techniques for measuring two or more coordinates
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8851Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T3/00Geometric image transformations in the plane of the image
    • G06T3/20Linear translation of whole images or parts thereof, e.g. panning
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00Image analysis
    • G06T7/0002Inspection of images, e.g. flaw detection
    • G06T7/0004Industrial image inspection
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00Image analysis
    • G06T7/60Analysis of geometric attributes
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06VIMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V10/00Arrangements for image or video recognition or understanding
    • G06V10/40Extraction of image or video features
    • G06V10/42Global feature extraction by analysis of the whole pattern, e.g. using frequency domain transformations or autocorrelation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00Indexing scheme for image analysis or image enhancement
    • G06T2207/20Special algorithmic details
    • G06T2207/20048Transform domain processing
    • G06T2207/20056Discrete and fast Fourier transform, [DFT, FFT]
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00Indexing scheme for image analysis or image enhancement
    • G06T2207/30Subject of image; Context of image processing
    • G06T2207/30108Industrial image inspection
    • G06T2207/30148Semiconductor; IC; Wafer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544Marks applied to semiconductor devices or parts
    • H01L2223/54493Peripheral marks on wafers, e.g. orientation flats, notches, lot number

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • Geometry (AREA)
  • Quality & Reliability (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Image Processing (AREA)
JP2016551197A 2014-02-12 2015-02-10 ウェハノッチの検出 Active JP6521988B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201461939131P 2014-02-12 2014-02-12
US61/939,131 2014-02-12
PCT/US2015/015270 WO2015123222A1 (en) 2014-02-12 2015-02-10 Wafer notch detection

Publications (3)

Publication Number Publication Date
JP2017508285A JP2017508285A (ja) 2017-03-23
JP2017508285A5 JP2017508285A5 (enExample) 2018-03-22
JP6521988B2 true JP6521988B2 (ja) 2019-05-29

Family

ID=53800566

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016551197A Active JP6521988B2 (ja) 2014-02-12 2015-02-10 ウェハノッチの検出

Country Status (6)

Country Link
US (1) US10366483B2 (enExample)
JP (1) JP6521988B2 (enExample)
KR (1) KR102175021B1 (enExample)
CN (1) CN106030772B (enExample)
TW (1) TWI649553B (enExample)
WO (1) WO2015123222A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10354373B2 (en) * 2017-04-26 2019-07-16 Kla-Tencor Corporation System and method for photomask alignment and orientation characterization based on notch detection
US11929277B2 (en) * 2019-09-06 2024-03-12 Kabushiki Kaisha Yaskawa Denki Wafer pre-aligner and method of pre-aligning wafer

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5381004A (en) 1993-08-31 1995-01-10 Applied Materials, Inc. Particle analysis of notched wafers
US5825913A (en) * 1995-07-18 1998-10-20 Cognex Corporation System for finding the orientation of a wafer
JPH11121589A (ja) * 1997-10-09 1999-04-30 Nikon Corp 搬送方法および搬送装置、および露光装置
JPH11317439A (ja) * 1998-05-01 1999-11-16 Nec Corp 位置決め装置
JP2000031245A (ja) * 1998-07-08 2000-01-28 Kobe Steel Ltd ウェーハノッチ位置検出装置
US6559457B1 (en) * 2000-03-23 2003-05-06 Advanced Micro Devices, Inc. System and method for facilitating detection of defects on a wafer
US20050174583A1 (en) 2000-07-06 2005-08-11 Chalmers Scott A. Method and apparatus for high-speed thickness mapping of patterned thin films
US6327517B1 (en) 2000-07-27 2001-12-04 Applied Materials, Inc. Apparatus for on-the-fly center finding and notch aligning for wafer handling robots
US6992482B2 (en) 2000-11-08 2006-01-31 Jentek Sensors, Inc. Magnetic field sensor having a switchable drive current spatial distribution
US6440821B1 (en) 2001-02-14 2002-08-27 Advanced Micro Devices, Inc. Method and apparatus for aligning wafers
JP2002280287A (ja) 2001-03-19 2002-09-27 Nikon Corp 位置検出方法、位置検出装置、露光方法、露光装置、及びデバイス製造方法
JP4947248B2 (ja) 2001-09-14 2012-06-06 Dowaエレクトロニクス株式会社 ノッチ付き化合物半導体ウエハ
US6784071B2 (en) 2003-01-31 2004-08-31 Taiwan Semiconductor Manufacturing Company, Ltd. Bonded SOI wafer with <100> device layer and <110> substrate for performance improvement
WO2005008735A2 (en) 2003-07-14 2005-01-27 August Technology Corporation Photoresist edge bead removal measurement
US7280200B2 (en) 2003-07-18 2007-10-09 Ade Corporation Detection of a wafer edge using collimated light
JP4296885B2 (ja) * 2003-09-17 2009-07-15 オムロン株式会社 円形物におけるマーク検出方法、ノッチ検出方法、半導体ウェーハの向き検査方法、および半導体ウェーハの向き検査装置
JP4522360B2 (ja) * 2005-12-02 2010-08-11 日東電工株式会社 半導体ウエハの位置決定方法およびこれを用いた装置
JP5093858B2 (ja) 2007-04-27 2012-12-12 芝浦メカトロニクス株式会社 半導体ウェーハ処理装置及び基準角度位置検出方法
JP5066393B2 (ja) * 2007-06-06 2012-11-07 株式会社日立ハイテクノロジーズ 異物・欠陥検査・観察システム
JP2009096698A (ja) 2007-10-19 2009-05-07 Toshiba Corp ウェーハ及びその製造方法
DE102008002753B4 (de) 2007-12-19 2010-03-25 Vistec Semiconductor Systems Gmbh Verfahren zur optischen Inspektion, Detektion und Visualisierung von Defekten auf scheibenförmigen Objekten
JP5469839B2 (ja) 2008-09-30 2014-04-16 株式会社日立ハイテクノロジーズ 物体表面の欠陥検査装置および方法
US8334520B2 (en) 2008-10-24 2012-12-18 Hitachi High-Technologies Corporation Charged particle beam apparatus
JP5477133B2 (ja) * 2010-04-09 2014-04-23 日新イオン機器株式会社 ウェーハハンドリング方法およびイオン注入装置
JP5534926B2 (ja) 2010-05-06 2014-07-02 リンテック株式会社 位置検出装置及びこれを用いたアライメント装置
CN102347224B (zh) * 2010-08-02 2015-08-26 北京中科信电子装备有限公司 一种注入机用晶片缺口定位装置

Also Published As

Publication number Publication date
US10366483B2 (en) 2019-07-30
TWI649553B (zh) 2019-02-01
KR20160120309A (ko) 2016-10-17
KR102175021B1 (ko) 2020-11-06
TW201534895A (zh) 2015-09-16
CN106030772B (zh) 2020-04-14
CN106030772A (zh) 2016-10-12
WO2015123222A1 (en) 2015-08-20
US20160086325A1 (en) 2016-03-24
JP2017508285A (ja) 2017-03-23

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