KR102175021B1 - 웨이퍼 노치 검출 - Google Patents

웨이퍼 노치 검출 Download PDF

Info

Publication number
KR102175021B1
KR102175021B1 KR1020167024767A KR20167024767A KR102175021B1 KR 102175021 B1 KR102175021 B1 KR 102175021B1 KR 1020167024767 A KR1020167024767 A KR 1020167024767A KR 20167024767 A KR20167024767 A KR 20167024767A KR 102175021 B1 KR102175021 B1 KR 102175021B1
Authority
KR
South Korea
Prior art keywords
wafer
notch
image
orientation
images
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020167024767A
Other languages
English (en)
Korean (ko)
Other versions
KR20160120309A (ko
Inventor
보리스 에프라티
나심 비샤라
아르카디 심킨
야론 이시-샬롬
Original Assignee
케이엘에이 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 케이엘에이 코포레이션 filed Critical 케이엘에이 코포레이션
Publication of KR20160120309A publication Critical patent/KR20160120309A/ko
Application granted granted Critical
Publication of KR102175021B1 publication Critical patent/KR102175021B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/002—Measuring arrangements characterised by the use of optical techniques for measuring two or more coordinates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G06K9/52—
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T3/00—Geometric image transformations in the plane of the image
    • G06T3/20—Linear translation of whole images or parts thereof, e.g. panning
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/60—Analysis of geometric attributes
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V10/00—Arrangements for image or video recognition or understanding
    • G06V10/40—Extraction of image or video features
    • G06V10/42—Global feature extraction by analysis of the whole pattern, e.g. using frequency domain transformations or autocorrelation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/20—Special algorithmic details
    • G06T2207/20048—Transform domain processing
    • G06T2207/20056—Discrete and fast Fourier transform, [DFT, FFT]
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54493—Peripheral marks on wafers, e.g. orientation flats, notches, lot number

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Quality & Reliability (AREA)
  • Geometry (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Image Processing (AREA)
KR1020167024767A 2014-02-12 2015-02-10 웨이퍼 노치 검출 Active KR102175021B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201461939131P 2014-02-12 2014-02-12
US61/939,131 2014-02-12
PCT/US2015/015270 WO2015123222A1 (en) 2014-02-12 2015-02-10 Wafer notch detection

Publications (2)

Publication Number Publication Date
KR20160120309A KR20160120309A (ko) 2016-10-17
KR102175021B1 true KR102175021B1 (ko) 2020-11-06

Family

ID=53800566

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167024767A Active KR102175021B1 (ko) 2014-02-12 2015-02-10 웨이퍼 노치 검출

Country Status (6)

Country Link
US (1) US10366483B2 (enExample)
JP (1) JP6521988B2 (enExample)
KR (1) KR102175021B1 (enExample)
CN (1) CN106030772B (enExample)
TW (1) TWI649553B (enExample)
WO (1) WO2015123222A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10354373B2 (en) * 2017-04-26 2019-07-16 Kla-Tencor Corporation System and method for photomask alignment and orientation characterization based on notch detection
US11929277B2 (en) * 2019-09-06 2024-03-12 Kabushiki Kaisha Yaskawa Denki Wafer pre-aligner and method of pre-aligning wafer

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090161097A1 (en) 2007-12-19 2009-06-25 Vistec Semiconductor Systems Gmbh Method for optical inspection, detection and visualization of defects on disk-shaped Objects
US20110260057A1 (en) 2008-10-24 2011-10-27 Tadashi Otaka Charged particle beam apparatus
US20120013334A1 (en) 2000-11-08 2012-01-19 Jentek Sensors, Inc. Material Property Estimation Using Inverse Interpolation

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5381004A (en) 1993-08-31 1995-01-10 Applied Materials, Inc. Particle analysis of notched wafers
US5825913A (en) * 1995-07-18 1998-10-20 Cognex Corporation System for finding the orientation of a wafer
JPH11121589A (ja) * 1997-10-09 1999-04-30 Nikon Corp 搬送方法および搬送装置、および露光装置
JPH11317439A (ja) * 1998-05-01 1999-11-16 Nec Corp 位置決め装置
JP2000031245A (ja) * 1998-07-08 2000-01-28 Kobe Steel Ltd ウェーハノッチ位置検出装置
US6559457B1 (en) * 2000-03-23 2003-05-06 Advanced Micro Devices, Inc. System and method for facilitating detection of defects on a wafer
US20050174583A1 (en) 2000-07-06 2005-08-11 Chalmers Scott A. Method and apparatus for high-speed thickness mapping of patterned thin films
US6327517B1 (en) 2000-07-27 2001-12-04 Applied Materials, Inc. Apparatus for on-the-fly center finding and notch aligning for wafer handling robots
US6440821B1 (en) 2001-02-14 2002-08-27 Advanced Micro Devices, Inc. Method and apparatus for aligning wafers
JP2002280287A (ja) 2001-03-19 2002-09-27 Nikon Corp 位置検出方法、位置検出装置、露光方法、露光装置、及びデバイス製造方法
JP4947248B2 (ja) 2001-09-14 2012-06-06 Ｄｏｗａエレクトロニクス株式会社 ノッチ付き化合物半導体ウエハ
US6784071B2 (en) 2003-01-31 2004-08-31 Taiwan Semiconductor Manufacturing Company, Ltd. Bonded SOI wafer with <100> device layer and <110> substrate for performance improvement
US7197178B2 (en) * 2003-07-14 2007-03-27 Rudolph Technologies, Inc. Photoresist edge bead removal measurement
US7280200B2 (en) 2003-07-18 2007-10-09 Ade Corporation Detection of a wafer edge using collimated light
JP4296885B2 (ja) * 2003-09-17 2009-07-15 オムロン株式会社 円形物におけるマーク検出方法、ノッチ検出方法、半導体ウェーハの向き検査方法、および半導体ウェーハの向き検査装置
JP4522360B2 (ja) * 2005-12-02 2010-08-11 日東電工株式会社 半導体ウエハの位置決定方法およびこれを用いた装置
DE112008001104B4 (de) 2007-04-27 2016-02-04 Shibaura Mechatronics Corp. Vorrichtung zur Halbleiterwafer-Bearbeitung und Verfahren sowie Vorrichtung zur Ermittlung einer Bezugswinkelposition
JP5066393B2 (ja) * 2007-06-06 2012-11-07 株式会社日立ハイテクノロジーズ 異物・欠陥検査・観察システム
JP2009096698A (ja) 2007-10-19 2009-05-07 Toshiba Corp ウェーハ及びその製造方法
JP5469839B2 (ja) 2008-09-30 2014-04-16 株式会社日立ハイテクノロジーズ 物体表面の欠陥検査装置および方法
JP5477133B2 (ja) * 2010-04-09 2014-04-23 日新イオン機器株式会社 ウェーハハンドリング方法およびイオン注入装置
JP5534926B2 (ja) 2010-05-06 2014-07-02 リンテック株式会社 位置検出装置及びこれを用いたアライメント装置
CN102347224B (zh) * 2010-08-02 2015-08-26 北京中科信电子装备有限公司 一种注入机用晶片缺口定位装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120013334A1 (en) 2000-11-08 2012-01-19 Jentek Sensors, Inc. Material Property Estimation Using Inverse Interpolation
US20090161097A1 (en) 2007-12-19 2009-06-25 Vistec Semiconductor Systems Gmbh Method for optical inspection, detection and visualization of defects on disk-shaped Objects
US20110260057A1 (en) 2008-10-24 2011-10-27 Tadashi Otaka Charged particle beam apparatus

Also Published As

Publication number Publication date
US10366483B2 (en) 2019-07-30
KR20160120309A (ko) 2016-10-17
CN106030772B (zh) 2020-04-14
TWI649553B (zh) 2019-02-01
TW201534895A (zh) 2015-09-16
WO2015123222A1 (en) 2015-08-20
CN106030772A (zh) 2016-10-12
JP2017508285A (ja) 2017-03-23
JP6521988B2 (ja) 2019-05-29
US20160086325A1 (en) 2016-03-24

Similar Documents

Publication Publication Date Title
US10529076B2 (en) Image processing apparatus and image processing method
US6751338B1 (en) System and method of using range image data with machine vision tools
US9014433B2 (en) Measurement apparatus, information processing apparatus, information processing method, and storage medium
WO2015014111A1 (zh) 一种光流跟踪方法和装置
CN103486969B (zh) 机器视觉对准方法及其装置
KR101850835B1 (ko) 광선추적법을 이용한 이동 로봇의 실내 위치 추정방법
WO2015037178A1 (ja) 姿勢推定方法及びロボット
CA2507174A1 (en) Method of registering and aligning multiple images
KR20130084849A (ko) 카메라 추적을 위한 방법 및 장치
KR102173244B1 (ko) Surf 특징점 추적 기반 영상 안정화 시스템
US10006762B2 (en) Information processing apparatus, information processing method, and storage medium
CN113538583A (zh) 一种工件在机床上位置的精准定位方法及视觉系统
JP2016091053A (ja) 情報処理装置および容器形状の推定方法、ワークピッキングシステム、プログラム
KR20190059639A (ko) 콘크리트 표면 균열 측정 장치 및 방법
CN113269671A (zh) 一种基于局部和全局特征的桥梁表观全景图生成方法
KR20180098945A (ko) 고정형 단일 카메라를 이용한 차량 속도 감지 방법 및 장치
US20150254854A1 (en) Camera calibration method and apparatus using a color-coded structure
KR102175021B1 (ko) 웨이퍼 노치 검출
CN112053401B (zh) 一种芯片拼接方法、装置、设备及存储介质
EP3867874B1 (en) Efficient egomotion estimation using patch based projected correlation
JP5614118B2 (ja) ランドマーク検知方法、ロボット及びプログラム
Miksch et al. Automatic extrinsic camera self-calibration based on homography and epipolar geometry
JP6165513B2 (ja) ハンドジェスチャトラッキングシステム
JP4101478B2 (ja) 人体端点検出方法及び装置
CN104937608A (zh) 道路区域检测

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PA0302 Request for accelerated examination

St.27 status event code: A-1-2-D10-D17-exm-PA0302

St.27 status event code: A-1-2-D10-D16-exm-PA0302

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-OTH-PR1001 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 6