JP6502697B2 - 半導体受光素子、受信モジュール及びそれらの製造方法 - Google Patents
半導体受光素子、受信モジュール及びそれらの製造方法 Download PDFInfo
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- JP6502697B2 JP6502697B2 JP2015029677A JP2015029677A JP6502697B2 JP 6502697 B2 JP6502697 B2 JP 6502697B2 JP 2015029677 A JP2015029677 A JP 2015029677A JP 2015029677 A JP2015029677 A JP 2015029677A JP 6502697 B2 JP6502697 B2 JP 6502697B2
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- 239000004065 semiconductor Substances 0.000 title claims description 113
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 238000005530 etching Methods 0.000 claims description 45
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 11
- 238000010521 absorption reaction Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 description 16
- 230000001681 protective effect Effects 0.000 description 11
- 239000013307 optical fiber Substances 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 8
- 230000031700 light absorption Effects 0.000 description 8
- 230000004308 accommodation Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
- H01L31/1035—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
Description
Claims (7)
- 半導体基板上に共通する材料で形成されるとともに、吸収層を含むメサ構造を有し、
前記メサ構造の側面を囲うように、埋め込み層によって埋めこまれる、
半導体受光素子であって、
前記メサ構造は、前記半導体基板側から順に、逆テーパ、順テーパ、及び逆テーパとなる断面を有する、
ことを特徴とする、半導体受光素子。 - 請求項1に記載の半導体受光素子であって、
前記メサ構造を形成する材料は、InGaAsである、
ことを特徴とする、半導体受光素子。 - 請求項1又は2に記載の半導体受光素子と、
前記半導体受光素子を搭載する、サブマウントと、
を備える、受信モジュールであって、
前記半導体受光素子は、前記サブマウントに搭載される側に、p側電極とn側電極とが形成され、
前記サブマウントは、前記半導体受光素子が搭載される側に、P電極パターン及びN電極パターンとが形成され、
前記p側電極は前記P電極パターンと、前記n側電極は前記N電極パターンと、それぞれ電気的に接続される、
ことを特徴とする、受信モジュール。 - 共通する材料で形成される半導体多層の上面に、第1マスクを形成し、前記第1マスクにより、エッチングを施し、第1メサを形成する、第1エッチング工程と、
前記第1マスクより小さい形状の第2マスクを形成する、第2マスク形成工程と、
前記第2マスクにより、前記第1メサの側面に対してエッチングを施して、第2メサを形成する、第2エッチング工程と、
前記第2マスクを用いて、前記第2メサを囲うように、埋め込み層を埋め込み成長させる、埋め込み成長工程と、
を備える、半導体受光素子の製造方法。 - 請求項4に記載の半導体受光素子の製造方法であって、
前記第2マスク形成工程は、前記第1マスクにエッチングを施すことにより、前記第2マスクを形成する、
ことを特徴とする、半導体受光素子の製造方法。 - 請求項5に記載の半導体受光素子の製造方法であって、
前記第2マスク形成工程において形成される前記第2マスクの形状は、前記第1マスクの形状よりも小さい、
ことを特徴とする、半導体受光素子の製造方法。 - 請求項4乃至6のいずれかに記載の半導体受光素子の製造方法であって、
前記第2マスク形成工程において形成される前記第2マスクの形状は、前記第1エッチング工程によって形成される前記第1メサの上表面の形状であるか、又は、該形状より小さい、
ことを特徴とする、半導体受光素子の製造方法。
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JP2015029677A JP6502697B2 (ja) | 2015-02-18 | 2015-02-18 | 半導体受光素子、受信モジュール及びそれらの製造方法 |
US15/042,655 US10230008B2 (en) | 2015-02-18 | 2016-02-12 | Semiconductor light receiving device, optical receiver module and manufacturing method thereof |
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JP2015029677A JP6502697B2 (ja) | 2015-02-18 | 2015-02-18 | 半導体受光素子、受信モジュール及びそれらの製造方法 |
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JP2016152348A JP2016152348A (ja) | 2016-08-22 |
JP6502697B2 true JP6502697B2 (ja) | 2019-04-17 |
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Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63111680A (ja) * | 1986-10-30 | 1988-05-16 | Fujitsu Ltd | 半導体受光素子の製造方法 |
JPH04343484A (ja) * | 1991-05-21 | 1992-11-30 | Eastman Kodak Japan Kk | 発光ダイオードアレイ |
JPH07211692A (ja) * | 1994-01-12 | 1995-08-11 | Sumitomo Electric Ind Ltd | InP系化合物半導体の加工方法 |
JPH0983077A (ja) * | 1995-09-14 | 1997-03-28 | Nippon Telegr & Teleph Corp <Ntt> | 半導体光装置 |
JP2001274510A (ja) * | 2000-03-28 | 2001-10-05 | Toshiba Corp | 導波路型光素子及びその製造方法 |
US20020096685A1 (en) * | 2000-12-27 | 2002-07-25 | Keiichi Yabusaki | Semiconductor devices, and methods of manufacture of the same |
JP4084958B2 (ja) * | 2002-05-24 | 2008-04-30 | 日本オプネクスト株式会社 | 半導体受光装置の製造方法 |
KR100640393B1 (ko) * | 2004-05-20 | 2006-10-30 | 삼성전자주식회사 | 역메사 구조를 이용한 광집적 소자 및 그 제조방법 |
JP2006066488A (ja) * | 2004-08-25 | 2006-03-09 | Mitsubishi Electric Corp | 半導体受光素子およびその製造方法 |
JP2008066329A (ja) * | 2006-09-04 | 2008-03-21 | Sumitomo Electric Ind Ltd | pin型フォトダイオードを作製する方法 |
JP4861887B2 (ja) | 2007-04-20 | 2012-01-25 | 日本オプネクスト株式会社 | 半導体受光装置、光受信モジュールおよび半導体受光装置の製造方法 |
JP2010010450A (ja) * | 2008-06-27 | 2010-01-14 | Mitsubishi Electric Corp | 導波路型受光素子 |
US8072041B2 (en) * | 2009-04-08 | 2011-12-06 | Finisar Corporation | Passivated optical detectors with full protection layer |
JP2010278406A (ja) | 2009-06-01 | 2010-12-09 | Opnext Japan Inc | アバランシェホトダイオード及びこれを用いた光受信モジュール |
JP2012248649A (ja) * | 2011-05-27 | 2012-12-13 | Renesas Electronics Corp | 半導体素子、および半導体素子の製造方法 |
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US10230008B2 (en) | 2019-03-12 |
JP2016152348A (ja) | 2016-08-22 |
US20160240698A1 (en) | 2016-08-18 |
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