JP6482865B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
- Publication number
- JP6482865B2 JP6482865B2 JP2014266139A JP2014266139A JP6482865B2 JP 6482865 B2 JP6482865 B2 JP 6482865B2 JP 2014266139 A JP2014266139 A JP 2014266139A JP 2014266139 A JP2014266139 A JP 2014266139A JP 6482865 B2 JP6482865 B2 JP 6482865B2
- Authority
- JP
- Japan
- Prior art keywords
- adhesive sheet
- semiconductor chips
- pressure
- sensitive adhesive
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 222
- 238000004519 manufacturing process Methods 0.000 title claims description 34
- 239000004820 Pressure-sensitive adhesive Substances 0.000 claims description 98
- 238000000034 method Methods 0.000 claims description 89
- 238000007789 sealing Methods 0.000 claims description 58
- 239000000853 adhesive Substances 0.000 claims description 54
- 230000001070 adhesive effect Effects 0.000 claims description 54
- 239000010410 layer Substances 0.000 claims description 40
- 239000013256 coordination polymer Substances 0.000 description 103
- 239000000463 material Substances 0.000 description 14
- 239000011347 resin Substances 0.000 description 13
- 229920005989 resin Polymers 0.000 description 13
- 238000005192 partition Methods 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000012790 adhesive layer Substances 0.000 description 5
- 238000001514 detection method Methods 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 229920001187 thermosetting polymer Polymers 0.000 description 5
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- -1 polyethylene terephthalate Polymers 0.000 description 4
- 238000000638 solvent extraction Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000006837 decompression Effects 0.000 description 3
- 230000002542 deteriorative effect Effects 0.000 description 3
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 230000037303 wrinkles Effects 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000002507 cathodic stripping potentiometry Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920002577 polybenzoxazole Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920013716 polyethylene resin Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Dicing (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014266139A JP6482865B2 (ja) | 2014-12-26 | 2014-12-26 | 半導体装置の製造方法 |
| TW104143853A TWI676210B (zh) | 2014-12-26 | 2015-12-25 | 半導體裝置之製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014266139A JP6482865B2 (ja) | 2014-12-26 | 2014-12-26 | 半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016127115A JP2016127115A (ja) | 2016-07-11 |
| JP2016127115A5 JP2016127115A5 (enExample) | 2017-11-16 |
| JP6482865B2 true JP6482865B2 (ja) | 2019-03-13 |
Family
ID=56358112
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014266139A Active JP6482865B2 (ja) | 2014-12-26 | 2014-12-26 | 半導体装置の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP6482865B2 (enExample) |
| TW (1) | TWI676210B (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102571926B1 (ko) * | 2017-05-22 | 2023-08-28 | 가부시끼가이샤 레조낙 | 반도체 장치의 제조 방법 및 익스팬드 테이프 |
| JP2019012714A (ja) * | 2017-06-29 | 2019-01-24 | 株式会社ディスコ | 半導体パッケージの製造方法 |
| KR102515684B1 (ko) * | 2017-11-16 | 2023-03-30 | 린텍 가부시키가이샤 | 반도체 장치의 제조 방법 |
| CN111295739B (zh) * | 2017-11-16 | 2023-08-25 | 琳得科株式会社 | 半导体装置的制造方法 |
| TWI785161B (zh) * | 2017-12-07 | 2022-12-01 | 日商琳得科股份有限公司 | 黏著性層積體、黏著性層積體之使用方法及半導體裝置之製造方法 |
| JP7084228B2 (ja) | 2018-06-26 | 2022-06-14 | 日東電工株式会社 | 半導体装置製造方法 |
| JP7250468B6 (ja) * | 2018-10-12 | 2023-04-25 | 三井化学株式会社 | 電子装置の製造方法および粘着性フィルム |
| KR102123419B1 (ko) * | 2018-10-29 | 2020-06-17 | 한국기계연구원 | 소자 간격 제어가 가능한 시트 및 이를 이용한 소자 간격 제어방법 |
| WO2020158766A1 (ja) * | 2019-01-31 | 2020-08-06 | リンテック株式会社 | エキスパンド方法及び半導体装置の製造方法 |
| CN114823456B (zh) * | 2021-01-19 | 2025-08-22 | 矽磐微电子(重庆)有限公司 | 转膜治具及芯片贴片方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010058646A1 (ja) * | 2008-11-21 | 2010-05-27 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 半導体パッケージおよびその製造方法 |
| JP2011077235A (ja) * | 2009-09-30 | 2011-04-14 | Nitto Denko Corp | 素子保持用粘着シートおよび素子の製造方法 |
| JP5350980B2 (ja) * | 2009-11-02 | 2013-11-27 | シチズン電子株式会社 | Led素子の製造方法 |
| JP5460374B2 (ja) * | 2010-02-19 | 2014-04-02 | シチズン電子株式会社 | 半導体装置の製造方法 |
| WO2014002535A1 (ja) * | 2012-06-29 | 2014-01-03 | シャープ株式会社 | 半導体装置の製造方法 |
-
2014
- 2014-12-26 JP JP2014266139A patent/JP6482865B2/ja active Active
-
2015
- 2015-12-25 TW TW104143853A patent/TWI676210B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI676210B (zh) | 2019-11-01 |
| TW201635360A (zh) | 2016-10-01 |
| JP2016127115A (ja) | 2016-07-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6482865B2 (ja) | 半導体装置の製造方法 | |
| JP6669674B2 (ja) | 粘着シートおよび半導体装置の製造方法 | |
| JP6482866B2 (ja) | 半導体装置の製造方法 | |
| JP6657515B2 (ja) | ウェーハを処理する方法および該方法で使用するための保護シート | |
| JP6580447B2 (ja) | 粘着シート及び半導体装置の製造方法 | |
| JP6983775B2 (ja) | 半導体装置の製造方法 | |
| US11011406B2 (en) | Method of processing a substrate | |
| JP2019125785A (ja) | ウェハの処理方法 | |
| JP4791843B2 (ja) | 接着フィルム付きデバイスの製造方法 | |
| JP2006203133A (ja) | チップ体の製造方法、デバイスの製造方法およびチップ体固着用粘接着シート | |
| KR20140107141A (ko) | 반도체 칩의 제조 방법 | |
| JP7317187B2 (ja) | 半導体装置の製造方法 | |
| US20180233470A1 (en) | Handling thin wafer during chip manufacture | |
| JP6438791B2 (ja) | 半導体装置の製造方法 | |
| TWI688631B (zh) | 黏著片及半導體裝置的製造方法 | |
| JP2004273639A (ja) | 半導体装置の製造方法 | |
| US7241642B2 (en) | Mounting and dicing process for wafers | |
| JP3494100B2 (ja) | 半導体装置及びその実装方法 | |
| JP6494433B2 (ja) | 粘着シートおよび半導体装置の製造方法 | |
| JP2010239030A (ja) | 半導体ウエハの加工方法 | |
| JP2011171643A (ja) | 半導体装置の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20171006 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20171006 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180627 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180710 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20180906 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181024 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190205 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190213 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 6482865 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |