JP6445799B2 - 光電変換装置 - Google Patents

光電変換装置 Download PDF

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Publication number
JP6445799B2
JP6445799B2 JP2014140865A JP2014140865A JP6445799B2 JP 6445799 B2 JP6445799 B2 JP 6445799B2 JP 2014140865 A JP2014140865 A JP 2014140865A JP 2014140865 A JP2014140865 A JP 2014140865A JP 6445799 B2 JP6445799 B2 JP 6445799B2
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Japan
Prior art keywords
region
photoelectric conversion
conversion device
floating diffusion
disposed
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JP2014140865A
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English (en)
Japanese (ja)
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JP2016018898A (ja
JP2016018898A5 (https=
Inventor
英司 桑原
英司 桑原
真里 磯部
真里 磯部
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2014140865A priority Critical patent/JP6445799B2/ja
Priority to US14/788,880 priority patent/US20160013224A1/en
Publication of JP2016018898A publication Critical patent/JP2016018898A/ja
Publication of JP2016018898A5 publication Critical patent/JP2016018898A5/ja
Application granted granted Critical
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
JP2014140865A 2014-07-08 2014-07-08 光電変換装置 Active JP6445799B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014140865A JP6445799B2 (ja) 2014-07-08 2014-07-08 光電変換装置
US14/788,880 US20160013224A1 (en) 2014-07-08 2015-07-01 Photoelectric conversion device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014140865A JP6445799B2 (ja) 2014-07-08 2014-07-08 光電変換装置

Publications (3)

Publication Number Publication Date
JP2016018898A JP2016018898A (ja) 2016-02-01
JP2016018898A5 JP2016018898A5 (https=) 2017-08-17
JP6445799B2 true JP6445799B2 (ja) 2018-12-26

Family

ID=55068186

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014140865A Active JP6445799B2 (ja) 2014-07-08 2014-07-08 光電変換装置

Country Status (2)

Country Link
US (1) US20160013224A1 (https=)
JP (1) JP6445799B2 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6519378B2 (ja) * 2015-07-23 2019-05-29 セイコーエプソン株式会社 データ転送回路、撮像回路装置及び電子機器
JP6711005B2 (ja) * 2016-02-23 2020-06-17 株式会社リコー 画素ユニット、及び撮像素子
JP6842240B2 (ja) * 2016-03-07 2021-03-17 株式会社リコー 画素ユニット、及び撮像素子
JP6897740B2 (ja) * 2016-03-07 2021-07-07 株式会社リコー 画素ユニット、及び撮像素子
JP2018049855A (ja) * 2016-09-20 2018-03-29 セイコーエプソン株式会社 固体撮像装置及び電子機器

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4826312A (en) * 1985-11-12 1989-05-02 Eastman Kodak Company Large area, low capacitance photodiode and range finder device using same
KR100494030B1 (ko) * 2002-01-10 2005-06-10 매그나칩 반도체 유한회사 이미지센서 및 그 제조 방법
JP4578792B2 (ja) * 2003-09-26 2010-11-10 富士通セミコンダクター株式会社 固体撮像装置
JP3977342B2 (ja) * 2004-02-05 2007-09-19 キヤノン株式会社 固体撮像装置の設計方法及び撮像システム
JP4242880B2 (ja) * 2006-05-17 2009-03-25 日本テキサス・インスツルメンツ株式会社 固体撮像装置及びその動作方法
JP2007335673A (ja) * 2006-06-15 2007-12-27 Matsushita Electric Ind Co Ltd 固体撮像装置とその製造方法
JP2008047911A (ja) * 2006-08-10 2008-02-28 Samsung Electronics Co Ltd イメージセンサー及びその製造方法
JP5366396B2 (ja) * 2007-12-28 2013-12-11 キヤノン株式会社 光電変換装置の製造方法、半導体装置の製造方法、光電変換装置、及び撮像システム
JP4618342B2 (ja) * 2008-05-20 2011-01-26 日本テキサス・インスツルメンツ株式会社 固体撮像装置
GB2462296A (en) * 2008-08-01 2010-02-03 Cambridge Display Tech Ltd Pixel driver circuits
US8076746B2 (en) * 2009-06-26 2011-12-13 Omnivision Technologies, Inc. Back-illuminated image sensors having both frontside and backside photodetectors
JP2011071734A (ja) * 2009-09-25 2011-04-07 Hamamatsu Photonics Kk 固体撮像装置
JP2011159758A (ja) * 2010-01-29 2011-08-18 Sony Corp 固体撮像装置とその製造方法、並びに電子機器
JP2012009652A (ja) * 2010-06-25 2012-01-12 Panasonic Corp 固体撮像装置およびその製造方法
JP5950507B2 (ja) * 2011-05-02 2016-07-13 キヤノン株式会社 半導体装置の製造方法およびｃｍｏｓイメージセンサーの製造方法
JP2013131516A (ja) * 2011-12-20 2013-07-04 Sony Corp 固体撮像装置、固体撮像装置の製造方法、及び、電子機器
JP2013225774A (ja) * 2012-04-20 2013-10-31 Brookman Technology Inc 固体撮像装置
US9520425B2 (en) * 2013-03-01 2016-12-13 Semiconductor Components Industries, Llc Image sensors with small pixels having high well capacity
KR102185277B1 (ko) * 2014-02-25 2020-12-01 삼성전자 주식회사 전송 게이트를 갖는 씨모스 이미지 센서

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JP2016018898A (ja) 2016-02-01
US20160013224A1 (en) 2016-01-14

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