JP6436031B2 - 単結晶引き上げ装置、及び単結晶引き上げ方法 - Google Patents

単結晶引き上げ装置、及び単結晶引き上げ方法 Download PDF

Info

Publication number
JP6436031B2
JP6436031B2 JP2015185654A JP2015185654A JP6436031B2 JP 6436031 B2 JP6436031 B2 JP 6436031B2 JP 2015185654 A JP2015185654 A JP 2015185654A JP 2015185654 A JP2015185654 A JP 2015185654A JP 6436031 B2 JP6436031 B2 JP 6436031B2
Authority
JP
Japan
Prior art keywords
single crystal
axis
flux density
magnetic flux
magnetic field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2015185654A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017057127A5 (enExample
JP2017057127A (ja
Inventor
清隆 高野
清隆 高野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2015185654A priority Critical patent/JP6436031B2/ja
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to CN201680053903.3A priority patent/CN108026660B/zh
Priority to PCT/JP2016/003827 priority patent/WO2017047008A1/ja
Priority to US15/758,023 priority patent/US10253425B2/en
Priority to KR1020217026631A priority patent/KR102478863B1/ko
Priority to KR1020187007462A priority patent/KR20180054615A/ko
Priority to DE112016003796.1T priority patent/DE112016003796B4/de
Publication of JP2017057127A publication Critical patent/JP2017057127A/ja
Publication of JP2017057127A5 publication Critical patent/JP2017057127A5/ja
Application granted granted Critical
Publication of JP6436031B2 publication Critical patent/JP6436031B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
    • C30B30/04—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F6/00—Superconducting magnets; Superconducting coils
    • H01F6/04—Cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F6/00—Superconducting magnets; Superconducting coils
    • H01F6/06—Coils, e.g. winding, insulating, terminating or casing arrangements therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2015185654A 2015-09-18 2015-09-18 単結晶引き上げ装置、及び単結晶引き上げ方法 Active JP6436031B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2015185654A JP6436031B2 (ja) 2015-09-18 2015-09-18 単結晶引き上げ装置、及び単結晶引き上げ方法
PCT/JP2016/003827 WO2017047008A1 (ja) 2015-09-18 2016-08-23 単結晶引き上げ装置及び単結晶引き上げ方法
US15/758,023 US10253425B2 (en) 2015-09-18 2016-08-23 Single-crystal pulling apparatus and single-crystal pulling method
KR1020217026631A KR102478863B1 (ko) 2015-09-18 2016-08-23 단결정 인상장치 및 단결정 인상방법
CN201680053903.3A CN108026660B (zh) 2015-09-18 2016-08-23 单晶拉制装置以及单晶拉制方法
KR1020187007462A KR20180054615A (ko) 2015-09-18 2016-08-23 단결정 인상장치 및 단결정 인상방법
DE112016003796.1T DE112016003796B4 (de) 2015-09-18 2016-08-23 Vorrichtung zum Ziehen eines Einkristalls und Verfahren zum Ziehen eines Einkristalls

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015185654A JP6436031B2 (ja) 2015-09-18 2015-09-18 単結晶引き上げ装置、及び単結晶引き上げ方法

Publications (3)

Publication Number Publication Date
JP2017057127A JP2017057127A (ja) 2017-03-23
JP2017057127A5 JP2017057127A5 (enExample) 2018-04-12
JP6436031B2 true JP6436031B2 (ja) 2018-12-12

Family

ID=58288507

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015185654A Active JP6436031B2 (ja) 2015-09-18 2015-09-18 単結晶引き上げ装置、及び単結晶引き上げ方法

Country Status (6)

Country Link
US (1) US10253425B2 (enExample)
JP (1) JP6436031B2 (enExample)
KR (2) KR20180054615A (enExample)
CN (1) CN108026660B (enExample)
DE (1) DE112016003796B4 (enExample)
WO (1) WO2017047008A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110129883A (zh) * 2018-03-30 2019-08-16 杭州慧翔电液技术开发有限公司 一种用于磁控直拉单晶的磁体结构及磁控直拉单晶的方法
JP2019196289A (ja) * 2018-05-11 2019-11-14 信越半導体株式会社 単結晶の製造方法及び単結晶引き上げ装置
JP7070500B2 (ja) * 2019-05-08 2022-05-18 信越半導体株式会社 単結晶引き上げ装置及び単結晶引き上げ方法
DE102019213236A1 (de) * 2019-09-02 2021-03-04 Siltronic Ag Verfahren zur Herstellung von Halbleiterscheiben aus einkristallinem Silizium
JP7160006B2 (ja) * 2019-09-19 2022-10-25 信越半導体株式会社 単結晶引上げ装置および単結晶引上げ方法
JP7230781B2 (ja) * 2019-11-14 2023-03-01 信越半導体株式会社 単結晶引き上げ装置及び単結晶引き上げ方法
CN113046833A (zh) * 2019-12-27 2021-06-29 上海新昇半导体科技有限公司 一种半导体晶体生长装置
CN111243821A (zh) * 2020-03-13 2020-06-05 中国科学院电工研究所 一种磁控直拉单晶超导磁体系统
WO2021187017A1 (ja) * 2020-03-17 2021-09-23 信越半導体株式会社 単結晶引上げ装置および単結晶引上げ方法
US12492489B2 (en) * 2020-11-10 2025-12-09 Sumco Corporation Single crystal manufacturing method, magnetic field generator, and single crystal manufacturing apparatus
JP7590192B2 (ja) * 2021-01-18 2024-11-26 住友重機械工業株式会社 超伝導磁石装置
JP7528799B2 (ja) * 2021-01-26 2024-08-06 信越半導体株式会社 単結晶引上げ装置および単結晶引上げ方法
JP7548081B2 (ja) 2021-03-15 2024-09-10 信越半導体株式会社 単結晶引上げ装置および単結晶引上げ方法
JP7683468B2 (ja) * 2021-11-30 2025-05-27 株式会社Sumco 単結晶の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003173536A (ja) * 2001-12-05 2003-06-20 Toshiba Corp 光ディスク装置及び記録倍速切替方法
JP2004051475A (ja) 2002-05-31 2004-02-19 Toshiba Corp 単結晶引上げ装置、超電導磁石および単結晶引上げ方法
JP3982353B2 (ja) * 2002-07-12 2007-09-26 日本電気株式会社 フォルトトレラントコンピュータ装置、その再同期化方法及び再同期化プログラム
JP4193558B2 (ja) * 2003-04-16 2008-12-10 信越半導体株式会社 単結晶の製造方法
JP4749661B2 (ja) 2003-10-15 2011-08-17 住友重機械工業株式会社 単結晶引上げ装置用超電導磁石装置における冷凍機の装着構造及び冷凍機のメンテナンス方法
KR100954291B1 (ko) * 2008-01-21 2010-04-26 주식회사 실트론 고품질의 반도체 단결정 잉곳 제조장치 및 방법
US9127377B2 (en) * 2012-08-21 2015-09-08 Babcock Noell Gmbh Generating a homogeneous magnetic field while pulling a single crystal from molten semiconductor material

Also Published As

Publication number Publication date
US10253425B2 (en) 2019-04-09
KR102478863B1 (ko) 2022-12-19
US20180237940A1 (en) 2018-08-23
CN108026660B (zh) 2020-07-24
DE112016003796B4 (de) 2025-02-13
CN108026660A (zh) 2018-05-11
DE112016003796T5 (de) 2018-05-30
KR20180054615A (ko) 2018-05-24
JP2017057127A (ja) 2017-03-23
WO2017047008A1 (ja) 2017-03-23
KR20210107902A (ko) 2021-09-01

Similar Documents

Publication Publication Date Title
JP6436031B2 (ja) 単結晶引き上げ装置、及び単結晶引き上げ方法
JP6620670B2 (ja) 単結晶引き上げ装置及び単結晶引き上げ方法
JP2004051475A (ja) 単結晶引上げ装置、超電導磁石および単結晶引上げ方法
KR102808358B1 (ko) 단결정 인상장치 및 단결정 인상방법
JP7548081B2 (ja) 単結晶引上げ装置および単結晶引上げ方法
JP7160006B2 (ja) 単結晶引上げ装置および単結晶引上げ方法
JP7230781B2 (ja) 単結晶引き上げ装置及び単結晶引き上げ方法
JP7439900B2 (ja) 単結晶引上げ装置および単結晶引上げ方法
JP2019196289A (ja) 単結晶の製造方法及び単結晶引き上げ装置
JPS6036392A (ja) 単結晶引上装置
JP7528799B2 (ja) 単結晶引上げ装置および単結晶引上げ方法
JPH10167875A (ja) 単結晶製造装置
JPS6278184A (ja) 単結晶育成装置
JPS6278183A (ja) 単結晶育成装置および単結晶育成方法
JPS6278182A (ja) 単結晶育成装置および単結晶育成方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170817

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180228

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20180717

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180828

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20181016

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20181029

R150 Certificate of patent or registration of utility model

Ref document number: 6436031

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250