KR20180054615A - 단결정 인상장치 및 단결정 인상방법 - Google Patents
단결정 인상장치 및 단결정 인상방법 Download PDFInfo
- Publication number
- KR20180054615A KR20180054615A KR1020187007462A KR20187007462A KR20180054615A KR 20180054615 A KR20180054615 A KR 20180054615A KR 1020187007462 A KR1020187007462 A KR 1020187007462A KR 20187007462 A KR20187007462 A KR 20187007462A KR 20180054615 A KR20180054615 A KR 20180054615A
- Authority
- KR
- South Korea
- Prior art keywords
- axis
- flux density
- single crystal
- magnetic flux
- magnetic field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000000034 method Methods 0.000 title claims description 17
- 239000013078 crystal Substances 0.000 claims abstract description 148
- 230000004907 flux Effects 0.000 claims abstract description 121
- 239000000463 material Substances 0.000 claims abstract description 33
- 239000004065 semiconductor Substances 0.000 claims description 38
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 238000002109 crystal growth method Methods 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 35
- 239000001301 oxygen Substances 0.000 abstract description 35
- 229910052760 oxygen Inorganic materials 0.000 abstract description 35
- 239000000155 melt Substances 0.000 description 23
- 230000000052 comparative effect Effects 0.000 description 19
- 230000002829 reductive effect Effects 0.000 description 11
- 230000007717 exclusion Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 239000003507 refrigerant Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000029142 excretion Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000012530 fluid Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000000452 restraining effect Effects 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 239000005436 troposphere Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
- C30B15/305—Stirring of the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
- C30B30/04—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F6/00—Superconducting magnets; Superconducting coils
- H01F6/04—Cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F6/00—Superconducting magnets; Superconducting coils
- H01F6/06—Coils, e.g. winding, insulating, terminating or casing arrangements therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020217026631A KR102478863B1 (ko) | 2015-09-18 | 2016-08-23 | 단결정 인상장치 및 단결정 인상방법 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2015-185654 | 2015-09-18 | ||
| JP2015185654A JP6436031B2 (ja) | 2015-09-18 | 2015-09-18 | 単結晶引き上げ装置、及び単結晶引き上げ方法 |
| PCT/JP2016/003827 WO2017047008A1 (ja) | 2015-09-18 | 2016-08-23 | 単結晶引き上げ装置及び単結晶引き上げ方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020217026631A Division KR102478863B1 (ko) | 2015-09-18 | 2016-08-23 | 단결정 인상장치 및 단결정 인상방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20180054615A true KR20180054615A (ko) | 2018-05-24 |
Family
ID=58288507
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020187007462A Ceased KR20180054615A (ko) | 2015-09-18 | 2016-08-23 | 단결정 인상장치 및 단결정 인상방법 |
| KR1020217026631A Active KR102478863B1 (ko) | 2015-09-18 | 2016-08-23 | 단결정 인상장치 및 단결정 인상방법 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020217026631A Active KR102478863B1 (ko) | 2015-09-18 | 2016-08-23 | 단결정 인상장치 및 단결정 인상방법 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10253425B2 (enExample) |
| JP (1) | JP6436031B2 (enExample) |
| KR (2) | KR20180054615A (enExample) |
| CN (1) | CN108026660B (enExample) |
| DE (1) | DE112016003796B4 (enExample) |
| WO (1) | WO2017047008A1 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20220006513A (ko) * | 2019-05-08 | 2022-01-17 | 신에쯔 한도타이 가부시키가이샤 | 단결정 인상장치 및 단결정 인상방법 |
| KR20230070287A (ko) * | 2020-11-10 | 2023-05-22 | 가부시키가이샤 사무코 | 단결정의 제조 방법, 자장 발생 장치 및 단결정 제조 장치 |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110129883A (zh) * | 2018-03-30 | 2019-08-16 | 杭州慧翔电液技术开发有限公司 | 一种用于磁控直拉单晶的磁体结构及磁控直拉单晶的方法 |
| JP2019196289A (ja) * | 2018-05-11 | 2019-11-14 | 信越半導体株式会社 | 単結晶の製造方法及び単結晶引き上げ装置 |
| DE102019213236A1 (de) * | 2019-09-02 | 2021-03-04 | Siltronic Ag | Verfahren zur Herstellung von Halbleiterscheiben aus einkristallinem Silizium |
| JP7160006B2 (ja) * | 2019-09-19 | 2022-10-25 | 信越半導体株式会社 | 単結晶引上げ装置および単結晶引上げ方法 |
| JP7230781B2 (ja) * | 2019-11-14 | 2023-03-01 | 信越半導体株式会社 | 単結晶引き上げ装置及び単結晶引き上げ方法 |
| CN113046833A (zh) * | 2019-12-27 | 2021-06-29 | 上海新昇半导体科技有限公司 | 一种半导体晶体生长装置 |
| CN111243821A (zh) * | 2020-03-13 | 2020-06-05 | 中国科学院电工研究所 | 一种磁控直拉单晶超导磁体系统 |
| WO2021187017A1 (ja) * | 2020-03-17 | 2021-09-23 | 信越半導体株式会社 | 単結晶引上げ装置および単結晶引上げ方法 |
| JP7590192B2 (ja) * | 2021-01-18 | 2024-11-26 | 住友重機械工業株式会社 | 超伝導磁石装置 |
| JP7528799B2 (ja) * | 2021-01-26 | 2024-08-06 | 信越半導体株式会社 | 単結晶引上げ装置および単結晶引上げ方法 |
| JP7548081B2 (ja) | 2021-03-15 | 2024-09-10 | 信越半導体株式会社 | 単結晶引上げ装置および単結晶引上げ方法 |
| JP7683468B2 (ja) * | 2021-11-30 | 2025-05-27 | 株式会社Sumco | 単結晶の製造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003173536A (ja) * | 2001-12-05 | 2003-06-20 | Toshiba Corp | 光ディスク装置及び記録倍速切替方法 |
| JP2004051475A (ja) | 2002-05-31 | 2004-02-19 | Toshiba Corp | 単結晶引上げ装置、超電導磁石および単結晶引上げ方法 |
| JP3982353B2 (ja) * | 2002-07-12 | 2007-09-26 | 日本電気株式会社 | フォルトトレラントコンピュータ装置、その再同期化方法及び再同期化プログラム |
| JP4193558B2 (ja) * | 2003-04-16 | 2008-12-10 | 信越半導体株式会社 | 単結晶の製造方法 |
| JP4749661B2 (ja) | 2003-10-15 | 2011-08-17 | 住友重機械工業株式会社 | 単結晶引上げ装置用超電導磁石装置における冷凍機の装着構造及び冷凍機のメンテナンス方法 |
| KR100954291B1 (ko) * | 2008-01-21 | 2010-04-26 | 주식회사 실트론 | 고품질의 반도체 단결정 잉곳 제조장치 및 방법 |
| US9127377B2 (en) * | 2012-08-21 | 2015-09-08 | Babcock Noell Gmbh | Generating a homogeneous magnetic field while pulling a single crystal from molten semiconductor material |
-
2015
- 2015-09-18 JP JP2015185654A patent/JP6436031B2/ja active Active
-
2016
- 2016-08-23 WO PCT/JP2016/003827 patent/WO2017047008A1/ja not_active Ceased
- 2016-08-23 KR KR1020187007462A patent/KR20180054615A/ko not_active Ceased
- 2016-08-23 DE DE112016003796.1T patent/DE112016003796B4/de active Active
- 2016-08-23 CN CN201680053903.3A patent/CN108026660B/zh active Active
- 2016-08-23 KR KR1020217026631A patent/KR102478863B1/ko active Active
- 2016-08-23 US US15/758,023 patent/US10253425B2/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20220006513A (ko) * | 2019-05-08 | 2022-01-17 | 신에쯔 한도타이 가부시키가이샤 | 단결정 인상장치 및 단결정 인상방법 |
| US12227872B2 (en) | 2019-05-08 | 2025-02-18 | Shin-Etsu Handotai Co., Ltd. | Single-crystal pulling apparatus and single-crystal pulling method |
| KR20230070287A (ko) * | 2020-11-10 | 2023-05-22 | 가부시키가이샤 사무코 | 단결정의 제조 방법, 자장 발생 장치 및 단결정 제조 장치 |
| US12492489B2 (en) | 2020-11-10 | 2025-12-09 | Sumco Corporation | Single crystal manufacturing method, magnetic field generator, and single crystal manufacturing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| US10253425B2 (en) | 2019-04-09 |
| KR102478863B1 (ko) | 2022-12-19 |
| US20180237940A1 (en) | 2018-08-23 |
| CN108026660B (zh) | 2020-07-24 |
| DE112016003796B4 (de) | 2025-02-13 |
| JP6436031B2 (ja) | 2018-12-12 |
| CN108026660A (zh) | 2018-05-11 |
| DE112016003796T5 (de) | 2018-05-30 |
| JP2017057127A (ja) | 2017-03-23 |
| WO2017047008A1 (ja) | 2017-03-23 |
| KR20210107902A (ko) | 2021-09-01 |
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