CN108026660B - 单晶拉制装置以及单晶拉制方法 - Google Patents

单晶拉制装置以及单晶拉制方法 Download PDF

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CN108026660B
CN108026660B CN201680053903.3A CN201680053903A CN108026660B CN 108026660 B CN108026660 B CN 108026660B CN 201680053903 A CN201680053903 A CN 201680053903A CN 108026660 B CN108026660 B CN 108026660B
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axis
single crystal
flux density
magnetic flux
distribution
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CN108026660A (zh
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高野清隆
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Shin Etsu Handotai Co Ltd
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Shin Etsu Handotai Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
    • C30B30/04—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F6/00—Superconducting magnets; Superconducting coils
    • H01F6/04—Cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F6/00—Superconducting magnets; Superconducting coils
    • H01F6/06—Coils, e.g. winding, insulating, terminating or casing arrangements therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN201680053903.3A 2015-09-18 2016-08-23 单晶拉制装置以及单晶拉制方法 Active CN108026660B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015-185654 2015-09-18
JP2015185654A JP6436031B2 (ja) 2015-09-18 2015-09-18 単結晶引き上げ装置、及び単結晶引き上げ方法
PCT/JP2016/003827 WO2017047008A1 (ja) 2015-09-18 2016-08-23 単結晶引き上げ装置及び単結晶引き上げ方法

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CN108026660A CN108026660A (zh) 2018-05-11
CN108026660B true CN108026660B (zh) 2020-07-24

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US (1) US10253425B2 (enExample)
JP (1) JP6436031B2 (enExample)
KR (2) KR20180054615A (enExample)
CN (1) CN108026660B (enExample)
DE (1) DE112016003796B4 (enExample)
WO (1) WO2017047008A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110129883A (zh) * 2018-03-30 2019-08-16 杭州慧翔电液技术开发有限公司 一种用于磁控直拉单晶的磁体结构及磁控直拉单晶的方法
JP2019196289A (ja) * 2018-05-11 2019-11-14 信越半導体株式会社 単結晶の製造方法及び単結晶引き上げ装置
JP7070500B2 (ja) * 2019-05-08 2022-05-18 信越半導体株式会社 単結晶引き上げ装置及び単結晶引き上げ方法
DE102019213236A1 (de) * 2019-09-02 2021-03-04 Siltronic Ag Verfahren zur Herstellung von Halbleiterscheiben aus einkristallinem Silizium
JP7160006B2 (ja) * 2019-09-19 2022-10-25 信越半導体株式会社 単結晶引上げ装置および単結晶引上げ方法
JP7230781B2 (ja) * 2019-11-14 2023-03-01 信越半導体株式会社 単結晶引き上げ装置及び単結晶引き上げ方法
CN113046833A (zh) * 2019-12-27 2021-06-29 上海新昇半导体科技有限公司 一种半导体晶体生长装置
CN111243821A (zh) * 2020-03-13 2020-06-05 中国科学院电工研究所 一种磁控直拉单晶超导磁体系统
WO2021187017A1 (ja) * 2020-03-17 2021-09-23 信越半導体株式会社 単結晶引上げ装置および単結晶引上げ方法
US12492489B2 (en) * 2020-11-10 2025-12-09 Sumco Corporation Single crystal manufacturing method, magnetic field generator, and single crystal manufacturing apparatus
JP7590192B2 (ja) * 2021-01-18 2024-11-26 住友重機械工業株式会社 超伝導磁石装置
JP7528799B2 (ja) * 2021-01-26 2024-08-06 信越半導体株式会社 単結晶引上げ装置および単結晶引上げ方法
JP7548081B2 (ja) 2021-03-15 2024-09-10 信越半導体株式会社 単結晶引上げ装置および単結晶引上げ方法
JP7683468B2 (ja) * 2021-11-30 2025-05-27 株式会社Sumco 単結晶の製造方法

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JP2004051475A (ja) * 2002-05-31 2004-02-19 Toshiba Corp 単結晶引上げ装置、超電導磁石および単結晶引上げ方法
JP2009173536A (ja) * 2008-01-21 2009-08-06 Siltron Inc 高品質の半導体単結晶インゴットの製造装置及び方法

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JP2003173536A (ja) * 2001-12-05 2003-06-20 Toshiba Corp 光ディスク装置及び記録倍速切替方法
JP3982353B2 (ja) * 2002-07-12 2007-09-26 日本電気株式会社 フォルトトレラントコンピュータ装置、その再同期化方法及び再同期化プログラム
JP4193558B2 (ja) * 2003-04-16 2008-12-10 信越半導体株式会社 単結晶の製造方法
JP4749661B2 (ja) 2003-10-15 2011-08-17 住友重機械工業株式会社 単結晶引上げ装置用超電導磁石装置における冷凍機の装着構造及び冷凍機のメンテナンス方法
US9127377B2 (en) * 2012-08-21 2015-09-08 Babcock Noell Gmbh Generating a homogeneous magnetic field while pulling a single crystal from molten semiconductor material

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004051475A (ja) * 2002-05-31 2004-02-19 Toshiba Corp 単結晶引上げ装置、超電導磁石および単結晶引上げ方法
JP2009173536A (ja) * 2008-01-21 2009-08-06 Siltron Inc 高品質の半導体単結晶インゴットの製造装置及び方法

Also Published As

Publication number Publication date
US10253425B2 (en) 2019-04-09
KR102478863B1 (ko) 2022-12-19
US20180237940A1 (en) 2018-08-23
DE112016003796B4 (de) 2025-02-13
JP6436031B2 (ja) 2018-12-12
CN108026660A (zh) 2018-05-11
DE112016003796T5 (de) 2018-05-30
KR20180054615A (ko) 2018-05-24
JP2017057127A (ja) 2017-03-23
WO2017047008A1 (ja) 2017-03-23
KR20210107902A (ko) 2021-09-01

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