JP2017057127A5 - - Google Patents

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JP2017057127A5
JP2017057127A5 JP2015185654A JP2015185654A JP2017057127A5 JP 2017057127 A5 JP2017057127 A5 JP 2017057127A5 JP 2015185654 A JP2015185654 A JP 2015185654A JP 2015185654 A JP2015185654 A JP 2015185654A JP 2017057127 A5 JP2017057127 A5 JP 2017057127A5
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degrees
magnetic field
axis
angle
central
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JP2015185654A
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Japanese (ja)
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JP6436031B2 (ja
JP2017057127A (ja
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Priority claimed from JP2015185654A external-priority patent/JP6436031B2/ja
Priority to JP2015185654A priority Critical patent/JP6436031B2/ja
Priority to CN201680053903.3A priority patent/CN108026660B/zh
Priority to US15/758,023 priority patent/US10253425B2/en
Priority to KR1020217026631A priority patent/KR102478863B1/ko
Priority to PCT/JP2016/003827 priority patent/WO2017047008A1/ja
Priority to KR1020187007462A priority patent/KR20180054615A/ko
Priority to DE112016003796.1T priority patent/DE112016003796B4/de
Publication of JP2017057127A publication Critical patent/JP2017057127A/ja
Publication of JP2017057127A5 publication Critical patent/JP2017057127A5/ja
Publication of JP6436031B2 publication Critical patent/JP6436031B2/ja
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JP2015185654A 2015-09-18 2015-09-18 単結晶引き上げ装置、及び単結晶引き上げ方法 Active JP6436031B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2015185654A JP6436031B2 (ja) 2015-09-18 2015-09-18 単結晶引き上げ装置、及び単結晶引き上げ方法
PCT/JP2016/003827 WO2017047008A1 (ja) 2015-09-18 2016-08-23 単結晶引き上げ装置及び単結晶引き上げ方法
US15/758,023 US10253425B2 (en) 2015-09-18 2016-08-23 Single-crystal pulling apparatus and single-crystal pulling method
KR1020217026631A KR102478863B1 (ko) 2015-09-18 2016-08-23 단결정 인상장치 및 단결정 인상방법
CN201680053903.3A CN108026660B (zh) 2015-09-18 2016-08-23 单晶拉制装置以及单晶拉制方法
KR1020187007462A KR20180054615A (ko) 2015-09-18 2016-08-23 단결정 인상장치 및 단결정 인상방법
DE112016003796.1T DE112016003796B4 (de) 2015-09-18 2016-08-23 Vorrichtung zum Ziehen eines Einkristalls und Verfahren zum Ziehen eines Einkristalls

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015185654A JP6436031B2 (ja) 2015-09-18 2015-09-18 単結晶引き上げ装置、及び単結晶引き上げ方法

Publications (3)

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JP2017057127A JP2017057127A (ja) 2017-03-23
JP2017057127A5 true JP2017057127A5 (enExample) 2018-04-12
JP6436031B2 JP6436031B2 (ja) 2018-12-12

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JP2015185654A Active JP6436031B2 (ja) 2015-09-18 2015-09-18 単結晶引き上げ装置、及び単結晶引き上げ方法

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US (1) US10253425B2 (enExample)
JP (1) JP6436031B2 (enExample)
KR (2) KR20180054615A (enExample)
CN (1) CN108026660B (enExample)
DE (1) DE112016003796B4 (enExample)
WO (1) WO2017047008A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110129883A (zh) * 2018-03-30 2019-08-16 杭州慧翔电液技术开发有限公司 一种用于磁控直拉单晶的磁体结构及磁控直拉单晶的方法
JP2019196289A (ja) * 2018-05-11 2019-11-14 信越半導体株式会社 単結晶の製造方法及び単結晶引き上げ装置
JP7070500B2 (ja) * 2019-05-08 2022-05-18 信越半導体株式会社 単結晶引き上げ装置及び単結晶引き上げ方法
DE102019213236A1 (de) * 2019-09-02 2021-03-04 Siltronic Ag Verfahren zur Herstellung von Halbleiterscheiben aus einkristallinem Silizium
JP7160006B2 (ja) * 2019-09-19 2022-10-25 信越半導体株式会社 単結晶引上げ装置および単結晶引上げ方法
JP7230781B2 (ja) * 2019-11-14 2023-03-01 信越半導体株式会社 単結晶引き上げ装置及び単結晶引き上げ方法
CN113046833A (zh) * 2019-12-27 2021-06-29 上海新昇半导体科技有限公司 一种半导体晶体生长装置
CN111243821A (zh) * 2020-03-13 2020-06-05 中国科学院电工研究所 一种磁控直拉单晶超导磁体系统
WO2021187017A1 (ja) * 2020-03-17 2021-09-23 信越半導体株式会社 単結晶引上げ装置および単結晶引上げ方法
US12492489B2 (en) * 2020-11-10 2025-12-09 Sumco Corporation Single crystal manufacturing method, magnetic field generator, and single crystal manufacturing apparatus
JP7590192B2 (ja) * 2021-01-18 2024-11-26 住友重機械工業株式会社 超伝導磁石装置
JP7528799B2 (ja) * 2021-01-26 2024-08-06 信越半導体株式会社 単結晶引上げ装置および単結晶引上げ方法
JP7548081B2 (ja) 2021-03-15 2024-09-10 信越半導体株式会社 単結晶引上げ装置および単結晶引上げ方法
JP7683468B2 (ja) * 2021-11-30 2025-05-27 株式会社Sumco 単結晶の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003173536A (ja) * 2001-12-05 2003-06-20 Toshiba Corp 光ディスク装置及び記録倍速切替方法
JP2004051475A (ja) 2002-05-31 2004-02-19 Toshiba Corp 単結晶引上げ装置、超電導磁石および単結晶引上げ方法
JP3982353B2 (ja) * 2002-07-12 2007-09-26 日本電気株式会社 フォルトトレラントコンピュータ装置、その再同期化方法及び再同期化プログラム
JP4193558B2 (ja) * 2003-04-16 2008-12-10 信越半導体株式会社 単結晶の製造方法
JP4749661B2 (ja) 2003-10-15 2011-08-17 住友重機械工業株式会社 単結晶引上げ装置用超電導磁石装置における冷凍機の装着構造及び冷凍機のメンテナンス方法
KR100954291B1 (ko) * 2008-01-21 2010-04-26 주식회사 실트론 고품질의 반도체 단결정 잉곳 제조장치 및 방법
US9127377B2 (en) * 2012-08-21 2015-09-08 Babcock Noell Gmbh Generating a homogeneous magnetic field while pulling a single crystal from molten semiconductor material

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