JP2015089854A5 - - Google Patents
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- JP2015089854A5 JP2015089854A5 JP2013229088A JP2013229088A JP2015089854A5 JP 2015089854 A5 JP2015089854 A5 JP 2015089854A5 JP 2013229088 A JP2013229088 A JP 2013229088A JP 2013229088 A JP2013229088 A JP 2013229088A JP 2015089854 A5 JP2015089854 A5 JP 2015089854A5
- Authority
- JP
- Japan
- Prior art keywords
- porosity
- crystal
- small
- single crystal
- shield
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013229088A JP6268936B2 (ja) | 2013-11-05 | 2013-11-05 | シリコン単結晶製造方法 |
| TW103134996A TWI593835B (zh) | 2013-11-05 | 2014-10-08 | Silicon single crystal manufacturing method |
| KR1020167014130A KR101787504B1 (ko) | 2013-11-05 | 2014-10-31 | 실리콘 단결정 제조 방법 |
| PCT/JP2014/005528 WO2015068370A1 (ja) | 2013-11-05 | 2014-10-31 | シリコン単結晶製造方法 |
| CN201480059891.6A CN105683424B (zh) | 2013-11-05 | 2014-10-31 | 单晶硅制造方法 |
| US15/030,706 US9903044B2 (en) | 2013-11-05 | 2014-10-31 | Silicon single crystal producing method |
| DE112014005069.5T DE112014005069B4 (de) | 2013-11-05 | 2014-10-31 | Silicium-Einkristall-Erzeugungsverfahren |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013229088A JP6268936B2 (ja) | 2013-11-05 | 2013-11-05 | シリコン単結晶製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015089854A JP2015089854A (ja) | 2015-05-11 |
| JP2015089854A5 true JP2015089854A5 (enExample) | 2016-07-14 |
| JP6268936B2 JP6268936B2 (ja) | 2018-01-31 |
Family
ID=53041165
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013229088A Active JP6268936B2 (ja) | 2013-11-05 | 2013-11-05 | シリコン単結晶製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9903044B2 (enExample) |
| JP (1) | JP6268936B2 (enExample) |
| KR (1) | KR101787504B1 (enExample) |
| CN (1) | CN105683424B (enExample) |
| DE (1) | DE112014005069B4 (enExample) |
| TW (1) | TWI593835B (enExample) |
| WO (1) | WO2015068370A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101871059B1 (ko) * | 2016-11-17 | 2018-07-20 | 에스케이실트론 주식회사 | 단결정 잉곳 성장장치 |
| CN108505111B (zh) * | 2017-02-27 | 2020-11-13 | 胜高股份有限公司 | 单晶的制造方法 |
| JP6304424B1 (ja) | 2017-04-05 | 2018-04-04 | 株式会社Sumco | 熱遮蔽部材、単結晶引き上げ装置および単結晶シリコンインゴットの製造方法 |
| JP6881214B2 (ja) * | 2017-10-16 | 2021-06-02 | 株式会社Sumco | シリコン単結晶の製造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2821481C2 (de) * | 1978-05-17 | 1985-12-05 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Vorrichtung zum Ziehen von hochreinen Halbleiterstäben aus der Schmelze |
| JP2807609B2 (ja) | 1993-01-28 | 1998-10-08 | 三菱マテリアルシリコン株式会社 | 単結晶の引上装置 |
| JP2619611B2 (ja) | 1993-05-31 | 1997-06-11 | 住友シチックス株式会社 | 単結晶の製造装置および製造方法 |
| JP4063904B2 (ja) * | 1996-12-13 | 2008-03-19 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | 半導体単結晶の引き上げ方法 |
| JP3670504B2 (ja) * | 1999-01-14 | 2005-07-13 | 東芝セラミックス株式会社 | シリコン単結晶製造方法 |
| WO2001063027A1 (en) | 2000-02-28 | 2001-08-30 | Shin-Etsu Handotai Co., Ltd | Method for preparing silicon single crystal and silicon single crystal |
| KR100558156B1 (ko) | 2003-10-31 | 2006-03-10 | 가부시키가이샤 섬코 | 실리콘 단결정의 육성 방법 |
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2013
- 2013-11-05 JP JP2013229088A patent/JP6268936B2/ja active Active
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2014
- 2014-10-08 TW TW103134996A patent/TWI593835B/zh active
- 2014-10-31 WO PCT/JP2014/005528 patent/WO2015068370A1/ja not_active Ceased
- 2014-10-31 US US15/030,706 patent/US9903044B2/en active Active
- 2014-10-31 CN CN201480059891.6A patent/CN105683424B/zh active Active
- 2014-10-31 KR KR1020167014130A patent/KR101787504B1/ko active Active
- 2014-10-31 DE DE112014005069.5T patent/DE112014005069B4/de active Active