JP2014528162A5 - - Google Patents

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Publication number
JP2014528162A5
JP2014528162A5 JP2014528670A JP2014528670A JP2014528162A5 JP 2014528162 A5 JP2014528162 A5 JP 2014528162A5 JP 2014528670 A JP2014528670 A JP 2014528670A JP 2014528670 A JP2014528670 A JP 2014528670A JP 2014528162 A5 JP2014528162 A5 JP 2014528162A5
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JP
Japan
Prior art keywords
solidification
energy
distance
crystal area
temperature difference
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JP2014528670A
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English (en)
Japanese (ja)
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JP2014528162A (ja
JP6129837B2 (ja
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Priority claimed from PCT/US2012/053527 external-priority patent/WO2013033637A2/en
Publication of JP2014528162A publication Critical patent/JP2014528162A/ja
Publication of JP2014528162A5 publication Critical patent/JP2014528162A5/ja
Application granted granted Critical
Publication of JP6129837B2 publication Critical patent/JP6129837B2/ja
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JP2014528670A 2011-09-01 2012-08-31 結晶化法 Active JP6129837B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161530265P 2011-09-01 2011-09-01
US61/530,265 2011-09-01
PCT/US2012/053527 WO2013033637A2 (en) 2011-09-01 2012-08-31 Crystallization methods

Publications (3)

Publication Number Publication Date
JP2014528162A JP2014528162A (ja) 2014-10-23
JP2014528162A5 true JP2014528162A5 (enExample) 2015-10-15
JP6129837B2 JP6129837B2 (ja) 2017-05-17

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ID=47752087

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014528670A Active JP6129837B2 (ja) 2011-09-01 2012-08-31 結晶化法

Country Status (7)

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US (2) US9373511B2 (enExample)
JP (1) JP6129837B2 (enExample)
KR (2) KR101713662B1 (enExample)
CN (1) CN103765564B (enExample)
SG (2) SG10201607229XA (enExample)
TW (2) TWI633587B (enExample)
WO (1) WO2013033637A2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI633587B (zh) * 2011-09-01 2018-08-21 應用材料股份有限公司 結晶化的方法
CN108604532B (zh) * 2016-01-08 2024-03-29 纽约市哥伦比亚大学理事会 用于点波束结晶的方法和系统
CN111479650A (zh) * 2017-10-13 2020-07-31 纽约市哥伦比亚大学理事会 用于点束和线束结晶的系统和方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3213338B2 (ja) * 1991-05-15 2001-10-02 株式会社リコー 薄膜半導体装置の製法
JP3065825B2 (ja) * 1992-10-21 2000-07-17 株式会社半導体エネルギー研究所 レーザー処理方法
JP3669384B2 (ja) * 1995-08-22 2005-07-06 独立行政法人理化学研究所 半導体基板中へのドーピング層の形成方法
GB9819338D0 (en) 1998-09-04 1998-10-28 Philips Electronics Nv Laser crystallisation of thin films
JP2001110723A (ja) * 1999-10-04 2001-04-20 Matsushita Electric Ind Co Ltd 多結晶シリコン薄膜の製造方法
JP4472066B2 (ja) * 1999-10-29 2010-06-02 シャープ株式会社 結晶性半導体膜の製造方法、結晶化装置及びｔｆｔの製造方法
JP2001319891A (ja) 2000-05-10 2001-11-16 Nec Corp 薄膜処理方法及び薄膜処理装置
JP5201614B2 (ja) 2001-07-23 2013-06-05 株式会社日本製鋼所 レーザ光の照射方法及びその装置
JP3860444B2 (ja) * 2001-08-28 2006-12-20 住友重機械工業株式会社 シリコン結晶化方法とレーザアニール装置
US7470602B2 (en) * 2002-10-29 2008-12-30 Sumitomo Heavy Industries, Ltd. Crystalline film and its manufacture method using laser
KR100685141B1 (ko) * 2002-10-29 2007-02-22 스미도모쥬기가이고교 가부시키가이샤 레이저를 이용한 결정막의 제조방법 및 결정막
TW200616232A (en) * 2004-08-09 2006-05-16 Adv Lcd Tech Dev Ct Co Ltd Semiconductor device including semiconductor thin film, which is subjected to heat treatment to have alignment mark, crystallizing method for the semiconductor thin film, and crystallizing apparatus for the semiconductor thin film
JP2006086447A (ja) * 2004-09-17 2006-03-30 Sharp Corp 半導体薄膜の製造方法および半導体薄膜の製造装置
US7645337B2 (en) * 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
US8221544B2 (en) * 2005-04-06 2012-07-17 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
US8148663B2 (en) * 2007-07-31 2012-04-03 Applied Materials, Inc. Apparatus and method of improving beam shaping and beam homogenization
TWI528418B (zh) 2009-11-30 2016-04-01 應用材料股份有限公司 在半導體應用上的結晶處理
TWI556284B (zh) * 2009-12-31 2016-11-01 紐約市哥倫比亞大學理事會 非週期性脈衝連續橫向結晶之系統及方法
TWI633587B (zh) * 2011-09-01 2018-08-21 應用材料股份有限公司 結晶化的方法

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