JP2014528162A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2014528162A5 JP2014528162A5 JP2014528670A JP2014528670A JP2014528162A5 JP 2014528162 A5 JP2014528162 A5 JP 2014528162A5 JP 2014528670 A JP2014528670 A JP 2014528670A JP 2014528670 A JP2014528670 A JP 2014528670A JP 2014528162 A5 JP2014528162 A5 JP 2014528162A5
- Authority
- JP
- Japan
- Prior art keywords
- solidification
- energy
- distance
- crystal area
- temperature difference
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 description 6
- 230000008023 solidification Effects 0.000 description 5
- 238000007711 solidification Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161530265P | 2011-09-01 | 2011-09-01 | |
| US61/530,265 | 2011-09-01 | ||
| PCT/US2012/053527 WO2013033637A2 (en) | 2011-09-01 | 2012-08-31 | Crystallization methods |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014528162A JP2014528162A (ja) | 2014-10-23 |
| JP2014528162A5 true JP2014528162A5 (enExample) | 2015-10-15 |
| JP6129837B2 JP6129837B2 (ja) | 2017-05-17 |
Family
ID=47752087
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014528670A Active JP6129837B2 (ja) | 2011-09-01 | 2012-08-31 | 結晶化法 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US9373511B2 (enExample) |
| JP (1) | JP6129837B2 (enExample) |
| KR (2) | KR101888834B1 (enExample) |
| CN (1) | CN103765564B (enExample) |
| SG (2) | SG2014008858A (enExample) |
| TW (2) | TWI590309B (enExample) |
| WO (1) | WO2013033637A2 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI590309B (zh) * | 2011-09-01 | 2017-07-01 | 應用材料股份有限公司 | 結晶化的方法 |
| KR102657831B1 (ko) | 2016-01-08 | 2024-04-16 | 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 | 스폿 빔 결정화를 위한 방법 및 시스템 |
| JP7335236B2 (ja) * | 2017-10-13 | 2023-08-29 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | スポットビーム及びラインビーム結晶化のためのシステムおよび方法 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3213338B2 (ja) * | 1991-05-15 | 2001-10-02 | 株式会社リコー | 薄膜半導体装置の製法 |
| JP3065825B2 (ja) * | 1992-10-21 | 2000-07-17 | 株式会社半導体エネルギー研究所 | レーザー処理方法 |
| JP3669384B2 (ja) * | 1995-08-22 | 2005-07-06 | 独立行政法人理化学研究所 | 半導体基板中へのドーピング層の形成方法 |
| GB9819338D0 (en) | 1998-09-04 | 1998-10-28 | Philips Electronics Nv | Laser crystallisation of thin films |
| JP2001110723A (ja) * | 1999-10-04 | 2001-04-20 | Matsushita Electric Ind Co Ltd | 多結晶シリコン薄膜の製造方法 |
| JP4472066B2 (ja) * | 1999-10-29 | 2010-06-02 | シャープ株式会社 | 結晶性半導体膜の製造方法、結晶化装置及びｔｆｔの製造方法 |
| JP2001319891A (ja) * | 2000-05-10 | 2001-11-16 | Nec Corp | 薄膜処理方法及び薄膜処理装置 |
| JP5201614B2 (ja) | 2001-07-23 | 2013-06-05 | 株式会社日本製鋼所 | レーザ光の照射方法及びその装置 |
| JP3860444B2 (ja) * | 2001-08-28 | 2006-12-20 | 住友重機械工業株式会社 | シリコン結晶化方法とレーザアニール装置 |
| KR100685141B1 (ko) * | 2002-10-29 | 2007-02-22 | 스미도모쥬기가이고교 가부시키가이샤 | 레이저를 이용한 결정막의 제조방법 및 결정막 |
| US7470602B2 (en) * | 2002-10-29 | 2008-12-30 | Sumitomo Heavy Industries, Ltd. | Crystalline film and its manufacture method using laser |
| TW200616232A (en) * | 2004-08-09 | 2006-05-16 | Adv Lcd Tech Dev Ct Co Ltd | Semiconductor device including semiconductor thin film, which is subjected to heat treatment to have alignment mark, crystallizing method for the semiconductor thin film, and crystallizing apparatus for the semiconductor thin film |
| JP2006086447A (ja) | 2004-09-17 | 2006-03-30 | Sharp Corp | 半導体薄膜の製造方法および半導体薄膜の製造装置 |
| US7645337B2 (en) * | 2004-11-18 | 2010-01-12 | The Trustees Of Columbia University In The City Of New York | Systems and methods for creating crystallographic-orientation controlled poly-silicon films |
| US8221544B2 (en) * | 2005-04-06 | 2012-07-17 | The Trustees Of Columbia University In The City Of New York | Line scan sequential lateral solidification of thin films |
| US8148663B2 (en) * | 2007-07-31 | 2012-04-03 | Applied Materials, Inc. | Apparatus and method of improving beam shaping and beam homogenization |
| TWI459444B (zh) * | 2009-11-30 | 2014-11-01 | 應用材料股份有限公司 | 在半導體應用上的結晶處理 |
| TWI556284B (zh) * | 2009-12-31 | 2016-11-01 | 紐約市哥倫比亞大學理事會 | 非週期性脈衝連續橫向結晶之系統及方法 |
| TWI590309B (zh) * | 2011-09-01 | 2017-07-01 | 應用材料股份有限公司 | 結晶化的方法 |
-
2012
- 2012-08-15 TW TW101129570A patent/TWI590309B/zh active
- 2012-08-15 TW TW106113879A patent/TWI633587B/zh active
- 2012-08-31 CN CN201280041674.5A patent/CN103765564B/zh active Active
- 2012-08-31 WO PCT/US2012/053527 patent/WO2013033637A2/en not_active Ceased
- 2012-08-31 SG SG2014008858A patent/SG2014008858A/en unknown
- 2012-08-31 SG SG10201607229XA patent/SG10201607229XA/en unknown
- 2012-08-31 US US13/601,069 patent/US9373511B2/en not_active Expired - Fee Related
- 2012-08-31 KR KR1020177005829A patent/KR101888834B1/ko active Active
- 2012-08-31 JP JP2014528670A patent/JP6129837B2/ja active Active
- 2012-08-31 KR KR1020147007164A patent/KR101713662B1/ko active Active
-
2016
- 2016-06-19 US US15/186,499 patent/US10074538B2/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2013103863A5 (ja) | β−Ｇａ２Ｏ３単結晶及びその製造方法 | |
| JP2014169319A5 (enExample) | ||
| TW201612179A (en) | A process for preparing a crystalline organic semiconductor material | |
| FR2940806B1 (fr) | Procede de solidification de semi-conducteur avec ajout de charges de semi-conducteur dope au cours de la cristallisation | |
| NZ714090A (en) | Stable crystal form of tipiracil hydrochloride and crystallization method for the same | |
| MX344325B (es) | Un metodo para hacer una confitura quebradiza extruida. | |
| WO2015148994A3 (en) | Article for use in high stress environments having multiple grain structures | |
| RU2013129492A (ru) | Способ получения листов из бор-содержащего алюмоматричного композиционного материала | |
| JP2018085529A5 (enExample) | ||
| WO2013033637A3 (en) | Crystallization methods | |
| JP2015533771A5 (ja) | 融液からの結晶シート用装置及び方法 | |
| IN2014DN05709A (enExample) | ||
| WO2013015642A3 (en) | Method for growth of ingot | |
| Shi et al. | Microstructure evolution behavior of DD6 single crystal superalloy at different using temperatures | |
| MY187928A (en) | Process for producing silicon single crystal | |
| MY184018A (en) | Continuous process for dry fractionation of glyceride oils | |
| WO2009054618A3 (en) | Method for achieving high purity separation and refinement by controlling morphology and particle size of 2,6-dimethylnaphthalene crystals | |
| IN2013MU03508A (enExample) | ||
| MY183217A (en) | Method for producing multicrystalline silicon | |
| GB0914621D0 (en) | A method, apparatus, computer readable storage medium and computer program for forming an object | |
| RU2014108691A (ru) | Способ получения термоэлектрических материалов | |
| CN204111923U (zh) | 多晶硅高效硅锭引晶板 | |
| WO2014100487A3 (en) | Methods to bond silica parts, a crucible, a system for growing a single crystal ingot and a method for growing a single crystal ingot | |
| JP2017065951A5 (enExample) | ||
| MD4266B1 (en) | Method for producing the ZnSe single crystal |